Works matching IS 2199160X AND DT 2022 AND VI 8 AND IP 8

Results: 26

Rainer Waser – A Pioneer of Fundamentals of Resistive Switching Memories.
Published in:
Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202200765
By:
- Valov, Ilia;
- Hasegawa, Tsuyoshi;
- Strukov, Dmitri
Publication type:
Article
Vertical Metal‐Oxide Electrochemical Memory for High‐Density Synaptic Array Based High‐Performance Neuromorphic Computing.
Published in:
Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202200378
By:
- Lee, Hyunjoon;
- Ryu, Da Gil;
- Lee, Giho;
- Song, Min‐Kyu;
- Moon, Hyungjin;
- Lee, Jaehyeong;
- Ryu, Jongchan;
- Kang, Ji‐Hoon;
- Suh, Junmin;
- Kim, Sangbum;
- Lim, Jongwoo;
- Jeon, Dongsuk;
- Kim, Seyoung;
- Kim, Jeehwan;
- Lee, Yun Seog
Publication type:
Article
Multi‐Level Control of Conductive Filament Evolution and Enhanced Resistance Controllability of the Cu‐Cone Structure Embedded Conductive Bridge Random Access Memory (Adv. Electron. Mater. 8/2022).
Published in:
Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202270041
By:
- Kim, Hae Jin;
- Kim, Jihun;
- Park, Tae Gyun;
- Yoon, Jung Ho;
- Hwang, Cheol Seong
Publication type:
Article
Temperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching (Adv. Electron. Mater. 8/2022).
Published in:
Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202100580
By:
- Lanza, Mario;
- Palumbo, Felix;
- Shi, Yuanyuan;
- Aguirre, Fernando;
- Boyeras, Santiago;
- Yuan, Bin;
- Yalon, Eilam;
- Moreno, Enrique;
- Wu, Tianru;
- Roldan, Juan B.
Publication type:
Article
Tailoring Crystallization Kinetics of Chalcogenides for Photonic Applications (Adv. Electron. Mater. 8/2022).
Published in:
Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202270038
By:
- Müller, Maximilian J.;
- Yadav, Aakash;
- Persch, Christoph;
- Wahl, Sophia;
- Hoff, Felix;
- Wuttig, Matthias
Publication type:
Article
Memtransistor Devices Based on MoS2 Multilayers with Volatile Switching due to Ag Cation Migration (Adv. Electron. Mater. 8/2022).
Published in:
Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202101161
By:
- Farronato, Matteo;
- Melegari, Margherita;
- Ricci, Saverio;
- Hashemkhani, Shahin;
- Bricalli, Alessandro;
- Ielmini, Daniele
Publication type:
Article
A Dynamical Compact Model of Diffusive and Drift Memristors for Neuromorphic Computing (Adv. Electron. Mater. 8/2022).
Published in:
Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202270040
By:
- Zhuo, Ye;
- Midya, Rivu;
- Song, Wenhao;
- Wang, Zhongrui;
- Asapu, Shiva;
- Rao, Mingyi;
- Lin, Peng;
- Jiang, Hao;
- Xia, Qiangfei;
- Williams, R. Stanley;
- Yang, J. Joshua
Publication type:
Article
Masthead: (Adv. Electron. Mater. 8/2022).
Published in:
Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202270039
Publication type:
Article
1S1R Optimization for High‐Frequency Inference on Binarized Spiking Neural Networks.
Published in:
Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202200323
By:
- Minguet Lopez, Joel;
- Rafhay, Quentin;
- Dampfhoffer, Manon;
- Reganaz, Lucas;
- Castellani, Niccolo;
- Meli, Valentina;
- Martin, Simon;
- Grenouillet, Laurent;
- Navarro, Gabriele;
- Magis, Thomas;
- Carabasse, Catherine;
- Hirtzlin, Tifenn;
- Vianello, Elisa;
- Deleruyelle, Damien;
- Portal, Jean‐Michel;
- Molas, Gabriel;
- Andrieu, François
Publication type:
Article
Forming‐Free Resistive Switching of Electrochemical Titanium Oxide Localized Nanostructures: Anodization, Chemical Composition, Nanoscale Size Effects, and Memristive Storage.
Published in:
Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202200215
By:
- Tominov, Roman;
- Avilov, Vadim;
- Vakulov, Zakhar;
- Khakhulin, Daniil;
- Ageev, Oleg;
- Valov, Ilia;
- Smirnov, Vladimir
Publication type:
Article
A Deep Study of Resistance Switching Phenomena in TaOx ReRAM Cells: System‐Theoretic Dynamic Route Map Analysis and Experimental Verification.
Published in:
Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202200182
By:
- Ascoli, Alon;
- Menzel, Stephan;
- Rana, Vikas;
- Kempen, Tim;
- Messaris, Ioannis;
- Demirkol, Ahmet Samil;
- Schulten, Michael;
- Siemon, Anne;
- Tetzlaff, Ronald
Publication type:
Article
Differentiable Content Addressable Memory with Memristors.
Published in:
Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202101198
By:
- Pedretti, Giacomo;
- Graves, Catherine E.;
- Van Vaerenbergh, Thomas;
- Serebryakov, Sergey;
- Foltin, Martin;
- Sheng, Xia;
- Mao, Ruibin;
- Li, Can;
- Strachan, John Paul
Publication type:
Article
Memtransistor Devices Based on MoS2 Multilayers with Volatile Switching due to Ag Cation Migration.
Published in:
Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202101161
By:
- Farronato, Matteo;
- Melegari, Margherita;
- Ricci, Saverio;
- Hashemkhani, Shahin;
- Bricalli, Alessandro;
- Ielmini, Daniele
Publication type:
Article
Tuning Resistive Switching Behavior by Controlling Internal Ionic Dynamics for Biorealistic Implementation of Synaptic Plasticity.
Published in:
Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202101025
By:
- Yoo, Sangmin;
- Wu, Yuting;
- Park, Yongmo;
- Lu, Wei D.
Publication type:
Article
Artificial Astrocyte Memristor with Recoverable Linearity for Neuromorphic Computing.
Published in:
Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202100669
By:
- Cheng, Caidie;
- Wang, Yanghao;
- Xu, Liying;
- Liu, Keqin;
- Dang, Bingjie;
- Lu, Yingming;
- Yan, Xiaoqin;
- Huang, Ru;
- Yang, Yuchao
Publication type:
Article
Stabilizing Remanent Polarization during Cycling in HZO‐Based Ferroelectric Device by Prolonging Wake‐up Period.
Published in:
Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202100662
By:
- Jiang, Pengfei;
- Wei, Wei;
- Yang, Yang;
- Wang, Yuan;
- Xu, Yannan;
- Tai, Lu;
- Yuan, Peng;
- Chen, Yuting;
- Gao, Zhaomeng;
- Gong, Tiancheng;
- Ding, Yaxin;
- Lv, Shuxian;
- Dang, Zhiwei;
- Wang, Yan;
- Yang, Jianguo;
- Luo, Qing;
- Liu, Ming
Publication type:
Article
A Variety of Functional Devices Realized by Ionic Nanoarchitectonics, Complementing Electronics Components.
Published in:
Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202100645
By:
- Terabe, Kazuya;
- Tsuchiya, Takashi;
- Tsuruoka, Tohru
Publication type:
Article
Tailoring Crystallization Kinetics of Chalcogenides for Photonic Applications.
Published in:
Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202100974
By:
- Müller, Maximilian J.;
- Yadav, Aakash;
- Persch, Christoph;
- Wahl, Sophia;
- Hoff, Felix;
- Wuttig, Matthias
Publication type:
Article
Low‐Frequency‐Noise Spectroscopy of TaOx‐based Resistive Switching Memory.
Published in:
Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202100758
By:
- Sugawara, Kota;
- Shima, Hisashi;
- Takahashi, Makoto;
- Naitoh, Yasuhisa;
- Suga, Hiroshi;
- Akinaga, Hiroyuki
Publication type:
Article
A Stacked Hybrid Organic/Inorganic Electrochemical Random‐Access Memory for Scalable Implementation.
Published in:
Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202100426
By:
- Tuchman, Yaakov;
- Quill, Tyler J.;
- LeCroy, Garrett;
- Salleo, Alberto
Publication type:
Article
Chemical Structure of Conductive Filaments in Tantalum Oxide Memristive Devices and Its Implications for the Formation Mechanism.
Published in:
Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202100936
By:
- Heisig, Thomas;
- Lange, Kristof;
- Gutsche, Alexander;
- Goß, Kalle Thorben;
- Hambsch, Sebastian;
- Locatelli, Andrea;
- Menteş, Tevfik Onur;
- Genuzio, Francesca;
- Menzel, Stephan;
- Dittmann, Regina
Publication type:
Article
Materials Characterization and Electrical Performance of Bilayer Structures for Enhanced Electrodeposition in Programmable Metallization Cells.
Published in:
Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202100897
By:
- Chamele, Ninad;
- Balaban, Mehmet B.;
- Patadia, Arshey;
- Swain, Smitha S.;
- Gonzalez‐Velo, Yago;
- Roldan, Manuel;
- Kozicki, Michael
Publication type:
Article
Investigation of Resistive Switching Mechanisms in Ti/TiOx/Pd‐Based RRAM Devices.
Published in:
Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202100827
By:
- Hu, Ruofei;
- Li, Xinyi;
- Tang, Jianshi;
- Li, Yijun;
- Zheng, Xiaojian;
- Gao, Bin;
- Qian, He;
- Wu, Huaqiang
Publication type:
Article
Temperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching.
Published in:
Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202100580
By:
- Lanza, Mario;
- Palumbo, Felix;
- Shi, Yuanyuan;
- Aguirre, Fernando;
- Boyeras, Santiago;
- Yuan, Bin;
- Yalon, Eilam;
- Moreno, Enrique;
- Wu, Tianru;
- Roldan, Juan B.
Publication type:
Article
A Dynamical Compact Model of Diffusive and Drift Memristors for Neuromorphic Computing.
Published in:
Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202100696
By:
- Zhuo, Ye;
- Midya, Rivu;
- Song, Wenhao;
- Wang, Zhongrui;
- Asapu, Shiva;
- Rao, Mingyi;
- Lin, Peng;
- Jiang, Hao;
- Xia, Qiangfei;
- Williams, R. Stanley;
- Yang, J. Joshua
Publication type:
Article
Multi‐Level Control of Conductive Filament Evolution and Enhanced Resistance Controllability of the Cu‐Cone Structure Embedded Conductive Bridge Random Access Memory.
Published in:
Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202100209
By:
- Kim, Hae Jin;
- Kim, Jihun;
- Park, Tae Gyun;
- Yoon, Jung Ho;
- Hwang, Cheol Seong
Publication type:
Article

Works matching IS 2199160X AND DT 2022 AND VI 8 AND IP 8

Rainer Waser – A Pioneer of Fundamentals of Resistive Switching Memories.

Vertical Metal‐Oxide Electrochemical Memory for High‐Density Synaptic Array Based High‐Performance Neuromorphic Computing.

Multi‐Level Control of Conductive Filament Evolution and Enhanced Resistance Controllability of the Cu‐Cone Structure Embedded Conductive Bridge Random Access Memory (Adv. Electron. Mater. 8/2022).

Temperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching (Adv. Electron. Mater. 8/2022).

Tailoring Crystallization Kinetics of Chalcogenides for Photonic Applications (Adv. Electron. Mater. 8/2022).

Memtransistor Devices Based on MoS<sub>2</sub> Multilayers with Volatile Switching due to Ag Cation Migration (Adv. Electron. Mater. 8/2022).

A Dynamical Compact Model of Diffusive and Drift Memristors for Neuromorphic Computing (Adv. Electron. Mater. 8/2022).

Masthead: (Adv. Electron. Mater. 8/2022).

1S1R Optimization for High‐Frequency Inference on Binarized Spiking Neural Networks.

Forming‐Free Resistive Switching of Electrochemical Titanium Oxide Localized Nanostructures: Anodization, Chemical Composition, Nanoscale Size Effects, and Memristive Storage.

A Deep Study of Resistance Switching Phenomena in TaO<sub>x</sub> ReRAM Cells: System‐Theoretic Dynamic Route Map Analysis and Experimental Verification.

Differentiable Content Addressable Memory with Memristors.

Memtransistor Devices Based on MoS<sub>2</sub> Multilayers with Volatile Switching due to Ag Cation Migration.

Tuning Resistive Switching Behavior by Controlling Internal Ionic Dynamics for Biorealistic Implementation of Synaptic Plasticity.

Artificial Astrocyte Memristor with Recoverable Linearity for Neuromorphic Computing.

Stabilizing Remanent Polarization during Cycling in HZO‐Based Ferroelectric Device by Prolonging Wake‐up Period.

A Variety of Functional Devices Realized by Ionic Nanoarchitectonics, Complementing Electronics Components.

Tailoring Crystallization Kinetics of Chalcogenides for Photonic Applications.

Low‐Frequency‐Noise Spectroscopy of TaOx‐based Resistive Switching Memory.

A Stacked Hybrid Organic/Inorganic Electrochemical Random‐Access Memory for Scalable Implementation.

Chemical Structure of Conductive Filaments in Tantalum Oxide Memristive Devices and Its Implications for the Formation Mechanism.

Materials Characterization and Electrical Performance of Bilayer Structures for Enhanced Electrodeposition in Programmable Metallization Cells.

Investigation of Resistive Switching Mechanisms in Ti/TiO<sub>x</sub>/Pd‐Based RRAM Devices.

Temperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching.

A Dynamical Compact Model of Diffusive and Drift Memristors for Neuromorphic Computing.

Multi‐Level Control of Conductive Filament Evolution and Enhanced Resistance Controllability of the Cu‐Cone Structure Embedded Conductive Bridge Random Access Memory.