Works matching IS 2199160X AND DT 2022 AND VI 8 AND IP 7
Results: 66
Defect Engineering for High Performance and Extremely Reliable a‐IGZO Thin‐Film Transistor in QD‐OLED (Adv. Electron. Mater. 7/2022).
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202270036
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- Article
Reduced Stochastic Resistive Switching in Organic‐Inorganic Hybrid Memristors by Vapor‐Phase Infiltration (Adv. Electron. Mater. 7/2022).
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202270035
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- Article
Tuning the Electrical Performance of 2D Perovskite Field‐Effect Transistors by Forming Organic Semiconductor/Perovskite van der Waals Heterojunctions (Adv. Electron. Mater. 7/2022).
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202270034
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- Article
Truxenone Triimide: Two‐Dimensional Molecular Arrangements of Triangular Molecules for Air Stable n‐Type Semiconductors (Adv. Electron. Mater. 7/2022).
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202270033
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Masthead: (Adv. Electron. Mater. 7/2022).
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202270032
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- Article
Room‐Temperature Non‐Local Spin Transport in Few‐Layer Black Phosphorus Passivated with MgO (Adv. Electron. Mater. 7/2022).
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202270031
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- Article
The Contrasting Impacts of the Al<sub>2</sub>O<sub>3</sub> and Y<sub>2</sub>O<sub>3</sub> Insertion Layers on the Crystallization of ZrO<sub>2</sub> Films for Dynamic Random Access Memory Capacitors (Adv. Electron. Mater. 7/2022).
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202270030
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- Article
Reduced Stochastic Resistive Switching in Organic‐Inorganic Hybrid Memristors by Vapor‐Phase Infiltration.
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202200172
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- Publication type:
- Article
Tuning the Electrical Performance of 2D Perovskite Field‐Effect Transistors by Forming Organic Semiconductor/Perovskite van der Waals Heterojunctions.
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202200148
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- Article
The Contrasting Impacts of the Al<sub>2</sub>O<sub>3</sub> and Y<sub>2</sub>O<sub>3</sub> Insertion Layers on the Crystallization of ZrO<sub>2</sub> Films for Dynamic Random Access Memory Capacitors.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202200099
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- Article
Fully Light‐Modulated Organic Artificial Synapse with the Assistance of Ferroelectric Polarization.
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101402
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- Article
Pine‐Branch‐Like SnO<sub>2</sub>/ZnO Heterostructure with Suppressed Dark Current and Enhanced On/Off Ratio for Visible‐Blind UV Imaging.
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101373
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- Article
Truxenone Triimide: Two‐Dimensional Molecular Arrangements of Triangular Molecules for Air Stable n‐Type Semiconductors.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101390
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- Article
Realizing Ferromagnetism in a Field‐Effect Transistor Based on VSe<sub>2</sub> Thin Flakes.
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101383
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- Article
A Laser‐ARPES View of the 2D Electron Systems at LaAlO<sub>3</sub>/SrTiO<sub>3</sub> and Al/SrTiO<sub>3</sub> Interfaces.
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101376
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- Article
Perovskite Oxide Ferroelectric Thin Films.
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101409
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- Article
High‐Performance Monolayer SiMe‐Graphene n‐Type Field‐Effect Transistors with Low Supply Voltage and High On‐State Current in Sub‐5 nm Gate Length.
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101359
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- Article
Real‐Time Correlation Detection via Online Learning of a Spiking Neural Network with a Conductive‐Bridge Neuron.
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101356
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- Article
Receptor Induced Doping of Conjugated Polymer Transistors: A Strategy for Selective and Ultrasensitive Phosphate Detection in Complex Aqueous Environments.
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101353
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- Article
Mechanism of Spin‐Orbit Torques in Platinum Oxide Systems.
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101335
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- Article
Tunneling‐Effect‐Boosted Interfacial Charge Trapping toward Photo‐Organic Transistor Memory.
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101349
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- Article
Smart Bandage with Inductor‐Capacitor Resonant Tank Based Printed Wireless Pressure Sensor on Electrospun Poly‐L‐Lactide Nanofibers.
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101348
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- Article
High‐Performance Pentacene‐Based Field‐Effect Transistor Memory Using the Electrets of Polymer Blends.
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101342
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- Article
Oxygen‐Driven Metal–Insulator Transition in SrNbO<sub>3</sub> Thin Films Probed by Infrared Spectroscopy.
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101338
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- Article
Microwave Flexible Electronics Directly Transformed from Foundry‐Produced, Multilayered Monolithic Integrated Circuits.
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101350
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- Article
Low‐Temperature Atomic Layer Deposition of High‐k SbO<sub>x</sub> for Thin Film Transistors.
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101334
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- Article
Investigation and Modeling of the Electrical Bias Stress in Electrolyte‐Gated Organic Transistors.
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101332
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- Article
Luminescent High‐Mobility 2D Organic Semiconductor Single Crystals.
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101281
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- Article
Effect of Thermal Conductivity of Substrate on the Giant Persistent Photoconductivity of Vanadium Dioxide Device.
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101327
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- Article
Enhanced Electrical Properties of Metal‐Organic Chemical Vapor Deposition‐Grown MoS<sub>2</sub> Thin Films through Oxygen‐Assisted Defect Control.
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101325
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- Article
Platinum(II)‐Acetylide Conjugated Polymer Containing Aza‐BODIPY Moieties for Panchromatic Photodetectors.
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101323
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- Article
Giant Negative Differential Resistance Effect Caused by Cutting off Acceptable Quantum States in Carbon Nanotube Tunneling Devices.
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101314
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- Article
Flexible Platform Oriented: Unipolar‐Type Hybrid Dual‐Channel Scalable Field‐Effect Phototransistors Array Based on Tellurium Nanowires and Tellurium‐Film with Highly Linear Photoresponsivity.
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101331
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- Article
Flexible Pseudocapacitive Iontronic Tactile Sensor Based on Microsphere‐Decorated Electrode and Microporous Polymer Electrolyte for Ultrasensitive Pressure Detection.
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101269
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- Article
Ultrathin P(NDI2OD‐T2) Films with High Electron Mobility in Both Bottom‐Gate and Top‐Gate Transistors.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101324
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- Publication type:
- Article
Defect Engineering for High Performance and Extremely Reliable a‐IGZO Thin‐Film Transistor in QD‐OLED.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101273
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- Publication type:
- Article
Nucleobase Polymers Promote Low Work Function Surfaces in Organic Electronics.
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101316
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- Article
Manipulating Strain in Transistors: From Mechanically Sensitive to Insensitive.
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101288
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- Article
The Impact of Benzothiadiazole on the Optoelectronic Performance of Polymer/PC<sub>71</sub>BM Blend Films and Their Application in NIR Phototransistors.
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101297
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- Article
Boosted Charge‐Carrier Transport in Triple‐Cation Perovskites by Ultrasonic Vibration Post Treatment.
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101286
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- Article
Superior Piezoelectricity in Bismuth Titanate‐Based Lead‐Free High‐Temperature Piezoceramics via Domain Engineering.
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101266
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- Article
Numerical Device Model for Organic Light‐Emitting Diodes Based on Thermally Activated Delayed Fluorescence.
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101261
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- Article
Solid‐State Electrolyte Gate Transistor with Ion Doping for Biosignal Classification of Neuromorphic Computing.
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101260
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- Article
CeO<sub>2</sub> Doping of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films for High Endurance Ferroelectric Memories.
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101258
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- Article
Properties and Applications of Copper(I) Thiocyanate Hole‐Transport Interlayers Processed from Different Solvents.
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101253
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- Article
Sub‐Zero Temperature Sensor Based on Laser‐Written Carbon.
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101252
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- Article
Plasmonic Tunnel Diode and Photodetector based on Layer‐Stacked AuNP‐Nanomembrane/p‐Si Heterojunction.
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101251
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- Article
Efficient Oxygen‐Vacancy Suppression and Electrical Stabilization of Solution‐Processed In<sub>2</sub>O<sub>3</sub>:Q (Q = S, Se) Thin‐Film Transistor with Chalcogen Alloying.
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101250
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- Article
A Bifunctional Memristor Enables Multiple Neuromorphic Computing Applications.
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101235
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- Article
Structural Modifications and Enhanced Thermoelectric Performance of CuI Nanoparticles Induced via Al‐Doping.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101214
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- Article