Works matching IS 2199160X AND DT 2022 AND VI 8 AND IP 5

Results: 37

Electronic Transport in 2D‐Based Printed FETs from a Multiscale Perspective (Adv. Electron. Mater. 5/2022).

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202100972

By:

Perucchini, Marta;
Marian, Damiano;
Marin, Enrique G.;
Cusati, Teresa;
Iannaccone, Giuseppe;
Fiori, Gianluca

Publication type:

Article

Excessive Oxygen Peroxide Model‐Based Analysis of Positive‐Bias‐Stress and Negative‐Bias‐Illumination‐Stress Instabilities in Self‐Aligned Top‐Gate Coplanar In–Ga–Zn–O Thin‐Film Transistors (Adv. Electron. Mater. 5/2022)

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101062

By:

Choi, Sungju;
Park, Jingyu;
Hwang, Seong‐Hyun;
Kim, Changwook;
Kim, Yong‐Sung;
Oh, Saeroonter;
Baeck, Ju Heyuck;
Bae, Jong Uk;
Noh, Jiyong;
Lee, Seok‐Woo;
Park, Kwon‐Shik;
Kim, Jeom‐Jae;
Yoon, Soo Young;
Kwon, Hyuck‐In;
Kim, Dae Hwan

Publication type:

Article

Masthead: (Adv. Electron. Mater. 5/2022).

Published in:: Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202270021
Publication type:: Article

Strain Balanced Self‐Supporting Single‐Crystalline LiNbO3 Thin Films for Flexible Electronics (Adv. Electron. Mater. 5/2022).

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202100986

By:

Zhou, Hongyan;
Zhang, Shibin;
Zheng, Pengcheng;
Wu, Jinbo;
Zhang, Liping;
Huang, Hao;
You, Tiangui;
Ren, Zhongqi;
Hu, Yuqing;
Zhong, Ni;
Huang, Kai;
Zhou, Min;
Ou, Xin

Publication type:

Article

High‐Precision Ionic Thermocouples Fabricated Using Potassium Ferri/Ferrocyanide and Iron Perchlorate (Adv. Electron. Mater. 5/2022).

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202100693

By:

Jeon, Jei Gyeong;
Kim, Hyeong Jun;
Shin, Gilyong;
Han, Yusu;
Kim, Ju Hyeon;
Lee, Ju Hwan;
Lee, Junho;
Lim, Hyeoncheol;
Ha, Seulki;
Bae, Minwoo;
Yoon, Sang‐Hee;
Kang, Tae June

Publication type:

Article

Disentangling Memristive and Memcapacitive Effects in Droplet Interface Bilayers Using Dynamic Impedance Spectroscopy.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202200121

By:

Sacci, Robert L.;
Scott, Haden L.;
Liu, Zening;
Bolmatov, Dima;
Doughty, Benjamin;
Katsaras, John;
Collier, C. Patrick

Publication type:

Article

Effect of the Oxygen Composition Control of HfOx Films on Threshold and Memory Switching Characteristics for Hybrid Memory Applications.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101257

By:

Lee, Seungwoo;
Kim, Seong Hun;
Oh, Seungyeol;
Lee, Donghwa;
Hwang, Hyunsang

Publication type:

Article

Subthreshold Swing of 59 mV decade−1 in Nanoscale Flexible Ultralow‐Voltage Organic Transistors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101215

By:

Geiger, Michael;
Lingstädt, Robin;
Wollandt, Tobias;
Deuschle, Julia;
Zschieschang, Ute;
Letzkus, Florian;
Burghartz, Joachim N.;
van Aken, Peter A.;
Weitz, R. Thomas;
Klauk, Hagen

Publication type:

Article

Emerging New‐Generation Detecting and Sensing of Metal Halide Perovskites.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101204

By:

Bu, Hui;
He, Caili;
Xu, Yanqing;
Xing, Lu;
Liu, Xiaomin;
Ren, Shuxia;
Yi, Shenghui;
Chen, Liang;
Wu, Hao;
Zhang, Guanglei;
Zhao, Jinjin;
Shi, Jianlin

Publication type:

Article

Polymer‐Based Composites for Engineering Organic Memristive Devices.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101192

By:

Prado‐Socorro, Carlos David;
Giménez‐Santamarina, Silvia;
Mardegan, Lorenzo;
Escalera‐Moreno, Luis;
Bolink, Henk J.;
Cardona‐Serra, Salvador;
Coronado, Eugenio

Publication type:

Article

Tunable Multi‐Bit Nonvolatile Memory Based on Ferroelectric Field‐Effect Transistors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101189

By:

Zhang, Qing;
Xiong, Hao;
Wang, Qiangfei;
Xu, Liping;
Deng, Menghan;
Zhang, Jinzhong;
Fuchs, Dirk;
Li, Wenwu;
Shang, Liyan;
Li, Yawei;
Hu, Zhigao;
Chu, Junhao

Publication type:

Article

Reconfigurable InSe Electronics with van der Waals Integration.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101176

By:

Hu, Siqi;
Luo, Xiaoguang;
Xu, Jinpeng;
Zhao, Qinghua;
Cheng, Yingchun;
Wang, Tao;
Jie, Wanqi;
Castellanos‐Gomez, Andres;
Gan, Xuetao;
Zhao, Jianlin

Publication type:

Article

Contact Resistivity in Edge‐Contacted Graphene Field Effect Transistors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101169

By:

Lee, Sungwon;
Choi, Hyungyu;
Moon, Inyong;
Shin, Hoseong;
Watanabe, Kenji;
Taniguchi, Takashi;
Yoo, Won Jong

Publication type:

Article

Stacking Engineered Room Temperature Ferroelectricity in Twisted Germanium Sulfide Nanowires.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101158

By:

Chowdhury, Tamaghna;
Taneja, Chetna;
Vasdev, Aastha;
Ghosh, Prasenjit;
Sheet, Goutam;
Kumar, G.V. Pavan;
Rahman, Atikur

Publication type:

Article

Gate‐Tunable Photovoltaic Effect in MoTe2 Lateral Homojunction.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101144

By:

Wen, Peiting;
Zhang, Li;
Gao, Wei;
Yue, Qian;
Wang, Hanyu;
Huang, Ying;
Wu, Jing;
Yu, He;
Chen, Hongyu;
Huo, Nengjie;
Li, Jingbo

Publication type:

Article

Very High Density (>1014 cm−2) Polarization‐Induced 2D Hole Gases Observed in Undoped Pseudomorphic InGaN/AlN Heterostructures.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101120

By:

Chaudhuri, Reet;
Zhang, Zexuan;
Xing, Huili Grace;
Jena, Debdeep

Publication type:

Article

Rational Design of Highly Soluble and Crystalline Conjugated Polymers for High‐Performance Field‐Effect Transistors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101105

By:

Lee, Kyumin;
Jeong, Moon‐Ki;
Suh, Eui Hyun;
Jeong, WonJo;
Oh, Jong Gyu;
Jang, Jaeyoung;
Jung, In Hwan

Publication type:

Article

Bi‐Stable Resistance Generation Mechanism for Oxygenated Amorphous Carbon‐Based Resistive Random‐Access Memory.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101083

By:

Jin, Soo‐Min;
Kim, Hea‐Jee;
Woo, Dae‐Seong;
Jung, Sung‐Mok;
Kim, Dong‐Eon;
Shim, Tae‐Hun;
Park, Jea‐Gun

Publication type:

Article

Perhydropolysilazane Charge‐Trap Layer in Solution‐Processed Organic and Oxide Memory Thin‐Film Transistors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101079

By:

Boampong, Amos Amoako;
Lee, Sang‐Hoon;
Lee, Jonghee;
Choi, Yoonseuk;
Kim, Min‐Hoi

Publication type:

Article

Excessive Oxygen Peroxide Model‐Based Analysis of Positive‐Bias‐Stress and Negative‐Bias‐Illumination‐Stress Instabilities in Self‐Aligned Top‐Gate Coplanar In–Ga–Zn–O Thin‐Film Transistors

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101062

By:

Choi, Sungju;
Park, Jingyu;
Hwang, Seong‐Hyun;
Kim, Changwook;
Kim, Yong‐Sung;
Oh, Saeroonter;
Baeck, Ju Heyuck;
Bae, Jong Uk;
Noh, Jiyong;
Lee, Seok‐Woo;
Park, Kwon‐Shik;
Kim, Jeom‐Jae;
Yoon, Soo Young;
Kwon, Hyuck‐In;
Kim, Dae Hwan

Publication type:

Article

Coupled Current Jumps and Domain Wall Creeps in a Defect‐Engineered Ferroelectric Resistive Memory.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101059

By:

Huang, Biaohong;
Xie, Zhongshuai;
Feng, Dingshuai;
Li, Lingli;
Li, Xiaoqi;
Paudel, Tula R.;
Han, Zheng;
Hu, Weijin;
Yuan, Guoliang;
Wu, Tom;
Zhang, Zhidong

Publication type:

Article

Metastable Antimony‐Doped SnO2 Quantum Wires for Ultrasensitive Gas Sensors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101049

By:

Song, Zhilong;
Hu, Zhixiang;
Liu, Jingyao;
Yan, Jia;
Li, Huaming;
Jiang, Jianjun;
Tang, Jiang;
Liu, Huan

Publication type:

Article

Impact of Ferroelectric Domain Structure on Bulk Photovoltaic Effect of Epitaxial BiFe1−xCoxO3 Films.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101043

By:

Chen, Yang;
Wei, Haoming;
Wu, Yangqing;
Cao, Bingqiang

Publication type:

Article

Procedure Optimization for Organic Ambipolar Transistor: Laterally Aligned Micro n‐/p‐Channels via Dry Soft‐Lithographic Process.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101041

By:

Oh, Sangyoon;
Park, Sang Kyu;
Park, Soo Young

Publication type:

Article

An Ultrathin Wideband Microwave Metamaterial Absorber Based on Frequency Selective Surface.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101040

By:

Han, Xuefeng;
Wang, Yonghua;
Xu, Jinkai;
Yu, Huadong

Publication type:

Article

Operationally Stable Ultrathin Organic Field Effect Transistors Based on Siloxane Dimers of Benzothieno[3,2‐b][1]Benzothiophene Suitable for Ethanethiol Detection.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101039

By:

Trul, Askold A.;
Chekusova, Victoria P.;
Anisimov, Daniil S.;
Borshchev, Oleg V.;
Polinskaya, Marina S.;
Agina, Elena V.;
Ponomarenko, Sergey A.

Publication type:

Article

Ultra‐Thin Chips with Printed Interconnects on Flexible Foils.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101029

By:

Ma, Sihang;
Kumaresan, Yogeenth;
Dahiya, Abhishek Singh;
Dahiya, Ravinder

Publication type:

Article

Influence of Nanoscale Charge Trapping Layer on the Memory and Synaptic Characteristics of a Novel Rubidium Lead Chloride Quantum Dot Based Memristor.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101015

By:

Das, Ujjal;
Sarkar, Pranab Kumar;
Das, Dip;
Paul, Bappi;
Roy, Asim

Publication type:

Article

A Biodegradable Gelatin Substrate and its Application for Crack Suppression of Flexible Gelatin Resistive Memory Device.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101014

By:

Chang, Yu‐Chi;
Liu, Hao‐Jung;
Lin, Kai‐Wen;
Huang, Wei‐Yun;
Hsu, Ya‐Lan

Publication type:

Article

Microwave Properties of 2D CMOS Compatible Co‐Planar Waveguides Made from Phosphorus Dopant Monolayers in Silicon.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202100989

By:

Chapman, Gemma;
Votsi, Haris;
Stock, Taylor J. Z.;
Clowes, Steven K.;
Curson, Neil J.;
Aaen, Peter H.;
Murdin, Ben N.

Publication type:

Article

Strain Balanced Self‐Supporting Single‐Crystalline LiNbO3 Thin Films for Flexible Electronics.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202100986

By:

Zhou, Hongyan;
Zhang, Shibin;
Zheng, Pengcheng;
Wu, Jinbo;
Zhang, Liping;
Huang, Hao;
You, Tiangui;
Ren, Zhongqi;
Hu, Yuqing;
Zhong, Ni;
Huang, Kai;
Zhou, Min;
Ou, Xin

Publication type:

Article

Electronic Transport in 2D‐Based Printed FETs from a Multiscale Perspective.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202100972

By:

Perucchini, Marta;
Marian, Damiano;
Marin, Enrique G.;
Cusati, Teresa;
Iannaccone, Giuseppe;
Fiori, Gianluca

Publication type:

Article

High‐Performance Phototransistors by Alumina Encapsulation of a 2D Semiconductor with Self‐Aligned Contacts.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202100954

By:

Liang, Guangda;
Wang, Yiming;
Zhang, Jiawei;
Kudrynskyi, Zakhar R.;
Kovalyuk, Zakhar;
Patanè, Amalia;
Xin, Qian;
Song, Aimin

Publication type:

Article

Pseudocapacitive Conjugated Polyelectrolyte/2D Electrolyte Hydrogels with Enhanced Physico‐Electrochemical Properties.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202100942

By:

Quek, Glenn;
Su, Yude;
Donato, Ricardo K.;
Vázquez, Ricardo J.;
Marangoni, Valeria S.;
Ng, Pei Rou;
Costa, Mariana C. F.;
Kundukad, Binu;
Novoselov, Konstantin S.;
Neto, Antonio H. Castro;
Bazan, Guillermo C.

Publication type:

Article

Ultralow‐Power Synaptic Transistors Based on Ta2O5/Al2O3 Bilayer Dielectric for Algebraic Arithmetic.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202100922

By:

Wang, Jiaxin;
Wang, Jialiang;
Zhang, Jiaona;
Huang, Weihong;
Wang, Xinwei;
Zhang, Min

Publication type:

Article

Tuning Hyrbrid Ferroelectric and Antiferroelectric Stacks for Low Power FeFET and FeRAM Applications by Using Laminated HSO and HZO films.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202100837

By:

Ali, Tarek;
Lehninger, David;
Lederer, Maximilian;
Li, Songrui;
Kühnel, Kati;
Mart, Clemens;
Mertens, Konstantin;
Hoffmann, Raik;
Olivo, Ricardo;
Emara, Jennifer;
Biedermann, Kati;
Metzger, Joachim;
Binder, Robert;
Czernohorsky, Malte;
Kämpfe, Thomas;
Müller, Johannes;
Seidel, Konrad;
Eng, Lukas M.

Publication type:

Article

High‐Precision Ionic Thermocouples Fabricated Using Potassium Ferri/Ferrocyanide and Iron Perchlorate.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202100693

By:

Jeon, Jei Gyeong;
Kim, Hyeong Jun;
Shin, Gilyong;
Han, Yusu;
Kim, Ju Hyeon;
Lee, Ju Hwan;
Lee, Junho;
Lim, Hyeoncheol;
Ha, Seulki;
Bae, Minwoo;
Yoon, Sang‐Hee;
Kang, Tae June

Publication type:

Article

Works matching IS 2199160X AND DT 2022 AND VI 8 AND IP 5

Electronic Transport in 2D‐Based Printed FETs from a Multiscale Perspective (Adv. Electron. Mater. 5/2022).

Excessive Oxygen Peroxide Model‐Based Analysis of Positive‐Bias‐Stress and Negative‐Bias‐Illumination‐Stress Instabilities in Self‐Aligned Top‐Gate Coplanar In–Ga–Zn–O Thin‐Film Transistors (Adv. Electron. Mater. 5/2022)

Masthead: (Adv. Electron. Mater. 5/2022).

Strain Balanced Self‐Supporting Single‐Crystalline LiNbO<sub>3</sub> Thin Films for Flexible Electronics (Adv. Electron. Mater. 5/2022).

High‐Precision Ionic Thermocouples Fabricated Using Potassium Ferri/Ferrocyanide and Iron Perchlorate (Adv. Electron. Mater. 5/2022).

Disentangling Memristive and Memcapacitive Effects in Droplet Interface Bilayers Using Dynamic Impedance Spectroscopy.

Effect of the Oxygen Composition Control of HfO<sub>x</sub> Films on Threshold and Memory Switching Characteristics for Hybrid Memory Applications.

Subthreshold Swing of 59 mV decade<sup>−1</sup> in Nanoscale Flexible Ultralow‐Voltage Organic Transistors.

Emerging New‐Generation Detecting and Sensing of Metal Halide Perovskites.

Polymer‐Based Composites for Engineering Organic Memristive Devices.

Tunable Multi‐Bit Nonvolatile Memory Based on Ferroelectric Field‐Effect Transistors.

Reconfigurable InSe Electronics with van der Waals Integration.

Contact Resistivity in Edge‐Contacted Graphene Field Effect Transistors.

Stacking Engineered Room Temperature Ferroelectricity in Twisted Germanium Sulfide Nanowires.

Gate‐Tunable Photovoltaic Effect in MoTe<sub>2</sub> Lateral Homojunction.

Very High Density (>10<sup>14</sup> cm<sup>−2</sup>) Polarization‐Induced 2D Hole Gases Observed in Undoped Pseudomorphic InGaN/AlN Heterostructures.

Rational Design of Highly Soluble and Crystalline Conjugated Polymers for High‐Performance Field‐Effect Transistors.

Bi‐Stable Resistance Generation Mechanism for Oxygenated Amorphous Carbon‐Based Resistive Random‐Access Memory.

Perhydropolysilazane Charge‐Trap Layer in Solution‐Processed Organic and Oxide Memory Thin‐Film Transistors.

Excessive Oxygen Peroxide Model‐Based Analysis of Positive‐Bias‐Stress and Negative‐Bias‐Illumination‐Stress Instabilities in Self‐Aligned Top‐Gate Coplanar In–Ga–Zn–O Thin‐Film Transistors

Coupled Current Jumps and Domain Wall Creeps in a Defect‐Engineered Ferroelectric Resistive Memory.

Metastable Antimony‐Doped SnO<sub>2</sub> Quantum Wires for Ultrasensitive Gas Sensors.

Impact of Ferroelectric Domain Structure on Bulk Photovoltaic Effect of Epitaxial BiFe<sub>1−</sub><sub>x</sub>Co<sub>x</sub>O<sub>3</sub> Films.

Procedure Optimization for Organic Ambipolar Transistor: Laterally Aligned Micro n‐/p‐Channels via Dry Soft‐Lithographic Process.

An Ultrathin Wideband Microwave Metamaterial Absorber Based on Frequency Selective Surface.

Operationally Stable Ultrathin Organic Field Effect Transistors Based on Siloxane Dimers of Benzothieno[3,2‐b][1]Benzothiophene Suitable for Ethanethiol Detection.

Ultra‐Thin Chips with Printed Interconnects on Flexible Foils.

Influence of Nanoscale Charge Trapping Layer on the Memory and Synaptic Characteristics of a Novel Rubidium Lead Chloride Quantum Dot Based Memristor.

A Biodegradable Gelatin Substrate and its Application for Crack Suppression of Flexible Gelatin Resistive Memory Device.

Microwave Properties of 2D CMOS Compatible Co‐Planar Waveguides Made from Phosphorus Dopant Monolayers in Silicon.

Strain Balanced Self‐Supporting Single‐Crystalline LiNbO<sub>3</sub> Thin Films for Flexible Electronics.

Electronic Transport in 2D‐Based Printed FETs from a Multiscale Perspective.

High‐Performance Phototransistors by Alumina Encapsulation of a 2D Semiconductor with Self‐Aligned Contacts.

Pseudocapacitive Conjugated Polyelectrolyte/2D Electrolyte Hydrogels with Enhanced Physico‐Electrochemical Properties.

Ultralow‐Power Synaptic Transistors Based on Ta<sub>2</sub>O<sub>5</sub>/Al<sub>2</sub>O<sub>3</sub> Bilayer Dielectric for Algebraic Arithmetic.

Tuning Hyrbrid Ferroelectric and Antiferroelectric Stacks for Low Power FeFET and FeRAM Applications by Using Laminated HSO and HZO films.

High‐Precision Ionic Thermocouples Fabricated Using Potassium Ferri/Ferrocyanide and Iron Perchlorate.