Works matching IS 2199160X AND DT 2022 AND VI 8 AND IP 4

Results: 39

Ultrathin Al‐Assisted Al2O3 Passivation Layer for High‐Stability Tungsten Diselenide Transistors and Their Ambipolar Inverter (Adv. Electron. Mater. 4/2022)

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101012

By:

Cho, Haewon;
Pujar, Pavan;
Cho, Yong In;
Hong, Seongin;
Kim, Sunkook

Publication type:

Article

ULTRARAM: A Low‐Energy, High‐Endurance, Compound‐Semiconductor Memory on Silicon (Adv. Electron. Mater. 4/2022).

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202270018

By:

Hodgson, Peter D.;
Lane, Dominic;
Carrington, Peter J.;
Delli, Evangelia;
Beanland, Richard;
Hayne, Manus

Publication type:

Article

Correlation between Transient Response and Neuromorphic Behavior in Organic Electrochemical Transistors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101186

By:

Yamamoto, Shunsuke;
Polyravas, Anastasios G.;
Han, Sanggil;
Malliaras, George G.

Publication type:

Article

Masthead: (Adv. Electron. Mater. 4/2022).

Published in:: Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202270016
Publication type:: Article

Super Electrical Insulating Materials Based on Honeycomb‐Inspired Nanostructure: High Electrical Strength and Low Permittivity and Dielectric Loss (Adv. Electron. Mater. 4/2022).

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202270015

By:

Sun, Potao;
Li, Chuang;
Sima, Wenxia;
Yuan, Tao;
Yang, Ming;
Chen, Yongqing

Publication type:

Article

Correlation between Transient Response and Neuromorphic Behavior in Organic Electrochemical Transistors (Adv. Electron. Mater. 4/2022).

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202270014

By:

Yamamoto, Shunsuke;
Polyravas, Anastasios G.;
Han, Sanggil;
Malliaras, George G.

Publication type:

Article

The Importance of Avoided Crossings in Understanding High Valley Degeneracy in Half‐Heusler Thermoelectric Semiconductors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101367

By:

Brod, Madison K.;
Anand, Shashwat;
Snyder, G. Jeffrey

Publication type:

Article

Ultrathin Al‐Assisted Al2O3 Passivation Layer for High‐Stability Tungsten Diselenide Transistors and Their Ambipolar Inverter (Adv. Electron. Mater. 4/2022).

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101012

By:

Cho, Haewon;
Pujar, Pavan;
Cho, Yong In;
Hong, Seongin;
Kim, Sunkook

Publication type:

Article

2D Ultrathin p‐type ZnTe with High Environmental Stability.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101146

By:

You, Shengdong;
Wu, Zhen;
Niu, Lijuan;
Chu, Xiaohong;
She, Yihong;
Liu, Zhenjing;
Cai, Yuting;
Liu, Hongwei;
Zhang, Lijie;
Zhang, Kenan;
Luo, Zhengtang;
Huang, Shaoming

Publication type:

Article

Silk Protein Based Volatile Threshold Switching Memristors for Neuromorphic Computing.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101139

By:

Zhao, Momo;
Wang, Saisai;
Li, Dingwei;
Wang, Rui;
Li, Fanfan;
Wu, Mengqi;
Liang, Kun;
Ren, Huihui;
Zheng, Xiaorui;
Guo, Chengchen;
Ma, Xiaohua;
Zhu, Bowen;
Wang, Hong;
Hao, Yue

Publication type:

Article

In‐Situ Loading Bridgman Growth of Mg3Bi1.49Sb0.5Te0.01 Bulk Crystals for Thermoelectric Applications.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101125

By:

Wang, Qi‐Qi;
Li, Fan;
Xia, Sheng‐Qing;
Liu, Jian;
Liu, Xiao‐Cun;
Chen, Ling;
Zhang, Cheng‐Qian

Publication type:

Article

Tuning Organic Semiconducting Binary Heterostructures Inherited by Template Nanostructures for Achieving High‐Performance Organic Transistors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101115

By:

Oh, Seungtaek;
Choi, Giheon;
Seo, Jungyoon;
Li, Shuangying;
Hwang, Taehoon;
Park, Eunyoung;
Lee, Hwa Sung

Publication type:

Article

Inverted Nonfullerene Polymer Solar Cells with Photoannealed Cs2CO3 Films as Electron Extraction Layers.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101111

By:

Liu, Zhiyong;
Wang, Hong‐En

Publication type:

Article

Improving the Long‐Term Stability of BPQD‐Based Memory Device via Modification with Polyvinylpyrrolidone‐Grafted Polydopamine.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101057

By:

Che, Qiang;
Wang, Xinzhu;
El‐Khouly, Mohamed E.;
Li, Guangwei;
Liu, Jiaxuan;
Zhang, Bin;
Chen, Yu

Publication type:

Article

Self‐Healable, Recyclable Anisotropic Conductive Films of Liquid Metal‐Gelatin Hybrids for Soft Electronics.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101034

By:

Park, Young‐Geun;
Jang, Jiuk;
Kim, Hyobeom;
Hwang, Jae Chul;
Kwon, Yong Won;
Park, Jang‐Ung

Publication type:

Article

Ultrathin Al‐Assisted Al2O3 Passivation Layer for High‐Stability Tungsten Diselenide Transistors and Their Ambipolar Inverter.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101012

By:

Cho, Haewon;
Pujar, Pavan;
Cho, Yong In;
Hong, Seongin;
Kim, Sunkook

Publication type:

Article

Development and Prospects of Halide Perovskite Single Crystal Films.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202100980

By:

Gao, Wenxiu;
Zhang, Zhuolei;
Xu, Rukai;
Chan, Emory M.;
Yuan, Guoliang;
Liu, Jun‐Ming

Publication type:

Article

ULTRARAM: A Low‐Energy, High‐Endurance, Compound‐Semiconductor Memory on Silicon.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101103

By:

Hodgson, Peter D.;
Lane, Dominic;
Carrington, Peter J.;
Delli, Evangelia;
Beanland, Richard;
Hayne, Manus

Publication type:

Article

Characteristics of PEALD–Hafnium Dioxide Films and their Application to Gate Insulator Stacks of Photosynaptic Transistors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101061

By:

Kim, Jieun;
Lim, Jung Wook;
Lee, Jaehee

Publication type:

Article

The Secret Ingredient for Exceptional Contact‐Controlled Transistors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101101

By:

Bestelink, Eva;
Zschieschang, Ute;
Bandara R M, Indrachapa;
Klauk, Hagen;
Sporea, Radu A.

Publication type:

Article

Electronic and Photoelectronic Memristors Based on 2D Materials.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101099

By:

Tang, Kai;
Wang, Yang;
Gong, Chuanhui;
Yin, Chujun;
Zhang, Miao;
Wang, Xianfu;
Xiong, Jie

Publication type:

Article

Optoelectronic Modulation of Interfacial Defects in Lead‐Free Perovskite Films for Resistive Switching.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101094

By:

Li, Jiacheng;
Zhang, Yu;
Yao, Chuangye;
Qin, Ni;
Chen, Ruqi;
Bao, Dinghua

Publication type:

Article

Crystal Structure Analysis and Magneto‐Transport Investigation of Co1−xFexSi (with x = 0% to x = 20%).

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101081

By:

Schnatmann, Lauritz;
Lammel, Michaela;
Damm, Christine;
Levin, Aleksandr A.;
Pérez, Nicolas;
Novikov, Sergey;
Burkov, Alexander;
Reith, Heiko;
Nielsch, Kornelius;
Schierning, Gabi

Publication type:

Article

Toward Functionalized Ultrathin Oxide Films: The Impact of Surface Apical Oxygen.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101006

By:

Gabel, Judith;
Pickem, Matthias;
Scheiderer, Philipp;
Dudy, Lenart;
Leikert, Berengar;
Fuchs, Marius;
Stübinger, Martin;
Schmitt, Matthias;
Küspert, Julia;
Sangiovanni, Giorgio;
Tomczak, Jan M.;
Held, Karsten;
Lee, Tien‐Lin;
Claessen, Ralph;
Sing, Michael

Publication type:

Article

Nonvolatile Resistive Switching in Layered InSe via Electrochemical Cation Diffusion.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202100999

By:

Mazumder, Aishani;
Ahmed, Taimur;
Mayes, Edwin;
Tawfik, Sherif Abdulkader;
Russo, Salvy P.;
Low, Mei Xian;
Ranjan, Abhishek;
Balendhran, Sivacarendran;
Walia, Sumeet

Publication type:

Article

Combustion Synthesized Electrospun InZnO Nanowires for Ultraviolet Photodetectors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202100997

By:

He, Junyu;
Xu, Peilong;
Zhou, Ruifu;
Li, Hao;
Zu, Hongliang;
Zhang, Jun;
Qin, Yuanbin;
Liu, Xuhai;
Wang, Fengyun

Publication type:

Article

Deciphering the Role of Defects in the Ambipolar Electrical Transport in Nanocrystalline Sb2Se3 Thin Films.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202100985

By:

González, Juan Carlos;
Limborço, Henrique;
Ribeiro‐Andrade, Rodrigo;
Silva, Bruno Cordeiro;
Krambrock, Klaus

Publication type:

Article

Probing the Spin Hall Characteristics of W/CoFeB/MgO Based Heterostructures for Spin‐Orbit Torque Based Magnetic Random Access Memory Application.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202100982

By:

Ghosh, Abhijit;
Chung, Hong Jing;
Khoo, Khoong Hong;
Shanmugam, Janaki;
Qiu, Jinjun;
Allauddin, Salauddeen;
Lim, Sze Ter

Publication type:

Article

Vertical Thin Film Transistor Based on Conductivity Modulation of Graphene Electrode by Micro‐Hole Patterning.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101000

By:

Pyo, Goeun;
Lee, Gwang Jun;
Lee, Seungchul;
Yang, Jae Hoon;
Heo, Su Jin;
Choi, Gyeong Hyeon;
Cha, SeungNam;
Jang, Jae Eun

Publication type:

Article

Super Electrical Insulating Materials Based on Honeycomb‐Inspired Nanostructure: High Electrical Strength and Low Permittivity and Dielectric Loss.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202100979

By:

Sun, Potao;
Li, Chuang;
Sima, Wenxia;
Yuan, Tao;
Yang, Ming;
Chen, Yongqing

Publication type:

Article

One‐Pot Synthesis of Deep Blue Hydrophobic Carbon Dots with Room Temperature Phosphorescence, White Light Emission, and Explosive Sensor.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202100969

By:

Pagidi, Sudhakar;
Sadhanala, Hari Krishna;
Sharma, Kusha;
Gedanken, Aharon

Publication type:

Article

Flexible Diodes with Low Breakdown Voltage for Steep Slope Transistors and One Diode‐One Resistor Applications.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202100961

By:

Aziz, Jamal;
Kim, Honggyun;
Rehman, Shania;
Khan, Muhammad Farooq;
Kadam, Kalyani D.;
Patil, Harshada;
Aftab, Sikandar;
Dastgeer, Ghulam;
Kim, Deok‐kee

Publication type:

Article

Multicolor Transparent‐Conductive‐Electrode Free Electronic Paper based on Steel Foil and Water Electrolyte with pH Indicator Dyes.

Published in:: Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202100901
Publication type:: Article

Highly Sensitive MXene Helical Yarn/Fabric Tactile Sensors Enabling Full Scale Movement Detection of Human Motions.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202100890

By:

Li, Han;
Cao, Jiqiang;
Chen, Junli;
Liu, Xiao;
Shao, Yawen;
Du, Zhaoqun

Publication type:

Article

Quantifying Polaron Mole Fractions and Interpreting Spectral Changes in Molecularly Doped Conjugated Polymers.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202100888

By:

Moulé, Adam J.;
Gonel, Goktug;
Murrey, Tucker L.;
Ghosh, Raja;
Saska, Jan;
Shevchenko, Nikolay E.;
Denti, Ilaria;
Fergerson, Alice S.;
Talbot, Rachel M.;
Yacoub, Nichole L.;
Mascal, Mark;
Salleo, Alberto;
Spano, Frank C.

Publication type:

Article

Printed Organic Electrochemical Transistors for Detecting Nutrients in Whole Plant Sap.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202100853

By:

Strand, Elliot J.;
Bihar, Eloise;
Gleason, Sean M.;
Han, Sanggil;
Schreiber, Samuel W.;
Renny, Megan N.;
Malliaras, George G.;
McLeod, Robert R.;
Whiting, Gregory L.

Publication type:

Article

Light‐Induced Synaptic Effects Controlled by Incorporation of Charge‐Trapping Layer into Hybrid Perovskite Memristor.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202100838

By:

Zawal, Piotr;
Mazur, Tomasz;
Lis, Maria;
Chiolerio, Alessandro;
Szaciłowski, Konrad

Publication type:

Article

Vanadium Disulfide Nanosheets Synthesized by Facile Liquid‐Phase Exfoliation for Ammonia Detection with High Selectivity.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202100567

By:

Kang, Jianlong;
Xu, Feicui;
Zhang, Chen;
Li, Feng;
Al‐Hartomy, Omar A.;
Al‐Ghamdi, Ahmed;
Wageh, Swelm.;
Zhao, Guanghui;
Yang, Tingqiang;
Zhang, Han

Publication type:

Article

Tunable Current Regulative Diode Based on Van der Waals Stacked MoS2/WSe2 Heterojunction–Channel Field‐Effect Transistor.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202100869

By:

Liu, Liwei;
Liu, Chunsen;
Huang, Xiaohe;
Zeng, Senfeng;
Tang, ZhaoWu;
Zhang, David Wei;
Zhou, Peng

Publication type:

Article

Works matching IS 2199160X AND DT 2022 AND VI 8 AND IP 4

Ultrathin Al‐Assisted Al<sub>2</sub>O<sub>3</sub> Passivation Layer for High‐Stability Tungsten Diselenide Transistors and Their Ambipolar Inverter (Adv. Electron. Mater. 4/2022)

ULTRARAM: A Low‐Energy, High‐Endurance, Compound‐Semiconductor Memory on Silicon (Adv. Electron. Mater. 4/2022).

Correlation between Transient Response and Neuromorphic Behavior in Organic Electrochemical Transistors.

Masthead: (Adv. Electron. Mater. 4/2022).

Super Electrical Insulating Materials Based on Honeycomb‐Inspired Nanostructure: High Electrical Strength and Low Permittivity and Dielectric Loss (Adv. Electron. Mater. 4/2022).

Correlation between Transient Response and Neuromorphic Behavior in Organic Electrochemical Transistors (Adv. Electron. Mater. 4/2022).

The Importance of Avoided Crossings in Understanding High Valley Degeneracy in Half‐Heusler Thermoelectric Semiconductors.

Ultrathin Al‐Assisted Al<sub>2</sub>O<sub>3</sub> Passivation Layer for High‐Stability Tungsten Diselenide Transistors and Their Ambipolar Inverter (Adv. Electron. Mater. 4/2022).

2D Ultrathin p‐type ZnTe with High Environmental Stability.

Silk Protein Based Volatile Threshold Switching Memristors for Neuromorphic Computing.

In‐Situ Loading Bridgman Growth of Mg<sub>3</sub>Bi<sub>1.49</sub>Sb<sub>0.5</sub>Te<sub>0.01</sub> Bulk Crystals for Thermoelectric Applications.

Tuning Organic Semiconducting Binary Heterostructures Inherited by Template Nanostructures for Achieving High‐Performance Organic Transistors.

Inverted Nonfullerene Polymer Solar Cells with Photoannealed Cs<sub>2</sub>CO<sub>3</sub> Films as Electron Extraction Layers.

Improving the Long‐Term Stability of BPQD‐Based Memory Device via Modification with Polyvinylpyrrolidone‐Grafted Polydopamine.

Self‐Healable, Recyclable Anisotropic Conductive Films of Liquid Metal‐Gelatin Hybrids for Soft Electronics.

Ultrathin Al‐Assisted Al<sub>2</sub>O<sub>3</sub> Passivation Layer for High‐Stability Tungsten Diselenide Transistors and Their Ambipolar Inverter.

Development and Prospects of Halide Perovskite Single Crystal Films.

ULTRARAM: A Low‐Energy, High‐Endurance, Compound‐Semiconductor Memory on Silicon.

Characteristics of PEALD–Hafnium Dioxide Films and their Application to Gate Insulator Stacks of Photosynaptic Transistors.

The Secret Ingredient for Exceptional Contact‐Controlled Transistors.

Electronic and Photoelectronic Memristors Based on 2D Materials.

Optoelectronic Modulation of Interfacial Defects in Lead‐Free Perovskite Films for Resistive Switching.

Crystal Structure Analysis and Magneto‐Transport Investigation of Co<sub>1−x</sub>Fe<sub>x</sub>Si (with x = 0% to x = 20%).

Toward Functionalized Ultrathin Oxide Films: The Impact of Surface Apical Oxygen.

Nonvolatile Resistive Switching in Layered InSe via Electrochemical Cation Diffusion.

Combustion Synthesized Electrospun InZnO Nanowires for Ultraviolet Photodetectors.

Deciphering the Role of Defects in the Ambipolar Electrical Transport in Nanocrystalline Sb<sub>2</sub>Se<sub>3</sub> Thin Films.

Probing the Spin Hall Characteristics of W/CoFeB/MgO Based Heterostructures for Spin‐Orbit Torque Based Magnetic Random Access Memory Application.

Vertical Thin Film Transistor Based on Conductivity Modulation of Graphene Electrode by Micro‐Hole Patterning.

Super Electrical Insulating Materials Based on Honeycomb‐Inspired Nanostructure: High Electrical Strength and Low Permittivity and Dielectric Loss.

One‐Pot Synthesis of Deep Blue Hydrophobic Carbon Dots with Room Temperature Phosphorescence, White Light Emission, and Explosive Sensor.

Flexible Diodes with Low Breakdown Voltage for Steep Slope Transistors and One Diode‐One Resistor Applications.

Multicolor Transparent‐Conductive‐Electrode Free Electronic Paper based on Steel Foil and Water Electrolyte with pH Indicator Dyes.

Highly Sensitive MXene Helical Yarn/Fabric Tactile Sensors Enabling Full Scale Movement Detection of Human Motions.

Quantifying Polaron Mole Fractions and Interpreting Spectral Changes in Molecularly Doped Conjugated Polymers.

Printed Organic Electrochemical Transistors for Detecting Nutrients in Whole Plant Sap.

Light‐Induced Synaptic Effects Controlled by Incorporation of Charge‐Trapping Layer into Hybrid Perovskite Memristor.

Vanadium Disulfide Nanosheets Synthesized by Facile Liquid‐Phase Exfoliation for Ammonia Detection with High Selectivity.

Tunable Current Regulative Diode Based on Van der Waals Stacked MoS<sub>2</sub>/WSe<sub>2</sub> Heterojunction–Channel Field‐Effect Transistor.