Works matching IS 2199160X AND DT 2022 AND VI 8 AND IP 4
Results: 39
Ultrathin Al‐Assisted Al<sub>2</sub>O<sub>3</sub> Passivation Layer for High‐Stability Tungsten Diselenide Transistors and Their Ambipolar Inverter (Adv. Electron. Mater. 4/2022)
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- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101012
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- Article
ULTRARAM: A Low‐Energy, High‐Endurance, Compound‐Semiconductor Memory on Silicon (Adv. Electron. Mater. 4/2022).
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- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202270018
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- Article
Ultrathin Al‐Assisted Al<sub>2</sub>O<sub>3</sub> Passivation Layer for High‐Stability Tungsten Diselenide Transistors and Their Ambipolar Inverter (Adv. Electron. Mater. 4/2022).
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101012
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- Article
Masthead: (Adv. Electron. Mater. 4/2022).
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- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202270016
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- Article
Super Electrical Insulating Materials Based on Honeycomb‐Inspired Nanostructure: High Electrical Strength and Low Permittivity and Dielectric Loss (Adv. Electron. Mater. 4/2022).
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- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202270015
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Correlation between Transient Response and Neuromorphic Behavior in Organic Electrochemical Transistors (Adv. Electron. Mater. 4/2022).
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- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202270014
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The Importance of Avoided Crossings in Understanding High Valley Degeneracy in Half‐Heusler Thermoelectric Semiconductors.
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- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101367
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- Article
Correlation between Transient Response and Neuromorphic Behavior in Organic Electrochemical Transistors.
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- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101186
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2D Ultrathin p‐type ZnTe with High Environmental Stability.
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- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101146
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- Article
Silk Protein Based Volatile Threshold Switching Memristors for Neuromorphic Computing.
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- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101139
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- Article
In‐Situ Loading Bridgman Growth of Mg<sub>3</sub>Bi<sub>1.49</sub>Sb<sub>0.5</sub>Te<sub>0.01</sub> Bulk Crystals for Thermoelectric Applications.
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- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101125
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- Article
Tuning Organic Semiconducting Binary Heterostructures Inherited by Template Nanostructures for Achieving High‐Performance Organic Transistors.
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- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101115
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- Article
Inverted Nonfullerene Polymer Solar Cells with Photoannealed Cs<sub>2</sub>CO<sub>3</sub> Films as Electron Extraction Layers.
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- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101111
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- Article
ULTRARAM: A Low‐Energy, High‐Endurance, Compound‐Semiconductor Memory on Silicon.
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- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101103
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- Article
The Secret Ingredient for Exceptional Contact‐Controlled Transistors.
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- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101101
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- Article
Electronic and Photoelectronic Memristors Based on 2D Materials.
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- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101099
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- Article
Optoelectronic Modulation of Interfacial Defects in Lead‐Free Perovskite Films for Resistive Switching.
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- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101094
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- Article
Crystal Structure Analysis and Magneto‐Transport Investigation of Co<sub>1−x</sub>Fe<sub>x</sub>Si (with x = 0% to x = 20%).
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- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101081
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- Article
Characteristics of PEALD–Hafnium Dioxide Films and their Application to Gate Insulator Stacks of Photosynaptic Transistors.
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- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101061
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- Article
Improving the Long‐Term Stability of BPQD‐Based Memory Device via Modification with Polyvinylpyrrolidone‐Grafted Polydopamine.
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- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101057
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- Article
Self‐Healable, Recyclable Anisotropic Conductive Films of Liquid Metal‐Gelatin Hybrids for Soft Electronics.
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- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101034
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- Article
Ultrathin Al‐Assisted Al<sub>2</sub>O<sub>3</sub> Passivation Layer for High‐Stability Tungsten Diselenide Transistors and Their Ambipolar Inverter.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101012
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- Publication type:
- Article
Toward Functionalized Ultrathin Oxide Films: The Impact of Surface Apical Oxygen.
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- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101006
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- Article
Vertical Thin Film Transistor Based on Conductivity Modulation of Graphene Electrode by Micro‐Hole Patterning.
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- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101000
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- Article
Nonvolatile Resistive Switching in Layered InSe via Electrochemical Cation Diffusion.
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- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202100999
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- Article
Combustion Synthesized Electrospun InZnO Nanowires for Ultraviolet Photodetectors.
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- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202100997
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- Article
Deciphering the Role of Defects in the Ambipolar Electrical Transport in Nanocrystalline Sb<sub>2</sub>Se<sub>3</sub> Thin Films.
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- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202100985
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- Article
Probing the Spin Hall Characteristics of W/CoFeB/MgO Based Heterostructures for Spin‐Orbit Torque Based Magnetic Random Access Memory Application.
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- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202100982
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- Article
Development and Prospects of Halide Perovskite Single Crystal Films.
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- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202100980
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- Publication type:
- Article
Super Electrical Insulating Materials Based on Honeycomb‐Inspired Nanostructure: High Electrical Strength and Low Permittivity and Dielectric Loss.
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- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202100979
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- Publication type:
- Article
One‐Pot Synthesis of Deep Blue Hydrophobic Carbon Dots with Room Temperature Phosphorescence, White Light Emission, and Explosive Sensor.
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- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202100969
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- Article
Flexible Diodes with Low Breakdown Voltage for Steep Slope Transistors and One Diode‐One Resistor Applications.
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- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202100961
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Multicolor Transparent‐Conductive‐Electrode Free Electronic Paper based on Steel Foil and Water Electrolyte with pH Indicator Dyes.
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- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202100901
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- Article
Highly Sensitive MXene Helical Yarn/Fabric Tactile Sensors Enabling Full Scale Movement Detection of Human Motions.
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- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202100890
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Quantifying Polaron Mole Fractions and Interpreting Spectral Changes in Molecularly Doped Conjugated Polymers.
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- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202100888
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- Article
Tunable Current Regulative Diode Based on Van der Waals Stacked MoS<sub>2</sub>/WSe<sub>2</sub> Heterojunction–Channel Field‐Effect Transistor.
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- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202100869
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- Publication type:
- Article
Printed Organic Electrochemical Transistors for Detecting Nutrients in Whole Plant Sap.
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- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202100853
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- Article
Light‐Induced Synaptic Effects Controlled by Incorporation of Charge‐Trapping Layer into Hybrid Perovskite Memristor.
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- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202100838
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- Article
Vanadium Disulfide Nanosheets Synthesized by Facile Liquid‐Phase Exfoliation for Ammonia Detection with High Selectivity.
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- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202100567
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- Article