Works matching IS 2199160X AND DT 2022 AND VI 8 AND IP 3
Results: 36
Strategic Optimization of the Electronic Transport Properties of Pseudo‐Ternary Clathrates (Adv. Electron. Mater. 3/2022).
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- Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202270013
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Masthead: (Adv. Electron. Mater. 3/2022).
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- Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202270012
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- Article
Mechanical Properties of Organic Electronic Polymers on the Nanoscale (Adv. Electron. Mater. 3/2022).
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- Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202270011
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Conductive Hybrid Cu‐HHTP‐TCNQ Metal–Organic Frameworks for Chemiresistive Sensing (Adv. Electron. Mater. 3/2022).
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- Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202270010
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From Pain to Fear Recognition via Pavlovian Learning in an Organic–Inorganic Hybrid Neuromorphic Transistor.
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- Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202101174
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- Article
Position‐Induced Efficient Doping for Highly Doped Organic Thermoelectric Materials.
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- Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202101142
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- Article
Narrow Band Red Emission Fluorophore with Reasonable Multiple Resonance Effect.
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- Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202101114
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- Article
Electromagnetic Interference Shielding Performance of Flexible, Hydrophobic Honeycomb‐Structured Ag@Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> Composites.
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- Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202101028
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- Article
Polarization‐Induced Band‐Alignment Transition and Nonvolatile p‐n Junctions in 2D Van der Waals Heterostructures.
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- Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202101022
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- Article
Mechanical Properties of Organic Electronic Polymers on the Nanoscale.
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- Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202101019
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- Article
Depth Gradient Reduced Graphene Oxide Layer via Intense Pulsed Light Annealing Process for the Flexible Resistive Random Access Memory Device.
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- Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202101018
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- Article
Ultrahigh Anisotropic Transport Properties of Black Phosphorus Field Effect Transistors Realized by Edge Contact.
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- Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202100988
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- Article
Recent Advances in New Materials for 6G Communications.
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- Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202100978
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- Article
Resistivity Scaling Transition in Ultrathin Metal Film at Critical Thickness and Its Implication for the Transparent Conductor Applications.
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- Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202100970
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- Article
Tunable Microwave Conductance of Nanodomains in Ferroelectric PbZr<sub>0.2</sub>Ti<sub>0.8</sub>O<sub>3</sub> Thin Film.
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- Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202100952
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Schottky Diode with Asymmetric Metal Contacts on WS<sub>2</sub>.
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- Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202100941
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- Article
Probing Relaxation Dynamics and Stepped Domain Switching in Boron‐Alloyed VO<sub>2</sub>.
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- Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202100932
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- Article
2D Mg‐Cu Intermetallic Compounds with Nontrivial Band Topology and Dirac Nodal Lines.
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- Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202100927
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- Article
Low‐Power/High‐Gain Flexible Complementary Circuits Based on Printed Organic Electrochemical Transistors.
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- Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202100907
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- Article
Low‐Operating‐Voltage Resistive Switching Memory Based on the Interlayer‐Spacing Regulation of MoSe<sub>2</sub>.
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- Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202100905
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- Article
Ultralow Light‐Power Consuming Photonic Synapses Based on Ultrasensitive Perovskite/Indium‐Gallium‐Zinc‐Oxide Heterojunction Phototransistors.
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- Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202100902
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- Article
Recent Progress of Solution‐Processed Copper‐based p‐Channel Thin‐Film Transistors.
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- Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202100893
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- Article
Bio‐Inspired Adaptive Sensing through Electropolymerization of Organic Electrochemical Transistors.
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- Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202100891
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- Article
Conductive Hybrid Cu‐HHTP‐TCNQ Metal–Organic Frameworks for Chemiresistive Sensing.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202100871
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- Publication type:
- Article
Photoinduced Multistable Resonance Frequency Switching of Phase Change Microstring at Room Temperature.
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- Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202100819
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- Article
Unique Features of Polarization in Ferroelectric Ionic Conductors.
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- Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202100810
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- Article
Beneficial Effect of Na<sub>2</sub>CO<sub>3</sub> Additions on the Thermoelectric Performance of Melt‐Route Cu<sub>2</sub>Se.
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- Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202100802
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- Article
Magnonic Goos–Hänchen Effect Induced by 1D Solitons.
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- Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202100782
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- Article
Thickness and Morphology Dependent Electrical Properties of ALD‐Synthesized MoS<sub>2</sub> FETs.
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- Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202100781
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- Article
Spin‐Torque Switching in Rare‐Earth‐Free Compensated Ferrimagnet Mn<sub>4</sub>N Films.
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- Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202100772
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- Article
Massive Magnetostriction of the Paramagnetic Insulator KEr(MoO<sub>4</sub>)<sub>2</sub> via a Single‐Ion Effect.
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- Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202100770
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- Article
Strong Rashba Effect and Different f−d Hybridization Phenomena at the Surface of the Heavy‐Fermion Superconductor CeIrIn<sub>5</sub>.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202100768
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- Article
Strategic Optimization of the Electronic Transport Properties of Pseudo‐Ternary Clathrates.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202100756
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- Publication type:
- Article
Exploring Charge Transport in High‐Temperature Polymorphism of ITIC Derivatives in Simple Processed Unipolar Bottom Contact Organic Field‐Effect Transistor.
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- Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202100743
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- Article
Solution Processable Pentafluorophenyl End‐Capped Dithienothiophene Organic Semiconductors for Hole‐Transporting Organic Field Effect Transistors.
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- Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202100648
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- Article
Nonlinear Behavior of Dendritic Polymer Networks for Reservoir Computing.
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- Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202100330
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- Article