Works matching IS 2199160X AND DT 2022 AND VI 8 AND IP 2

Results: 35

Masthead: (Adv. Electron. Mater. 2/2022).

Published in:: Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202270007
Publication type:: Article

Reliability Issues of Thin Film Transistors Subject to Electrostatic Discharge Stresses: An Overview (Adv. Electron. Mater. 2/2022).

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202270008

By:

Yan, Yan;
Lan, Wenrui;
Chen, Yuankang;
Yang, Dongbu;
Zhou, Ye;
Zhu, Zhihua;
Liou, Juin J

Publication type:

Article

High Speed Response Organic Photodetectors with Cascade Buffer Layers (Adv. Electron. Mater. 2/2022).

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100539

By:

Suganuma, Naotoshi;
Heo, Chul‐Joon;
Minami, Daiki;
Yun, Sungyoung;
Park, Sungjun;
Lim, Younhee;
Fang, Feifei;
Choi, Byoungki;
Park, Kyung‐Bae

Publication type:

Article

Achieving Large Switchable Polarization and Enhanced Piezoelectric Response in BiFeO3‐PbTiO3 Solid Solution Ceramics.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100883

By:

Zhuang, Jian;
Tang, Zhuohua;
Lu, Jinming;
Bokov, Alexei A.;
Zhang, Nan;
Kubrin, Stanislav P.;
Raevski, Igor P.;
Luo, Zeng;
Lian, Qin;
Yang, Shuming;
Ren, Wei;
Ye, Zuo‐Guang

Publication type:

Article

Flexible Threshold Switching Selectors with Ultrahigh Endurance Based on Halide Perovskites (Adv. Electron. Mater. 2/2022).

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202270009

By:

Tang, Lingzhi;
Huang, Yang;
Wang, Chen;
Zhao, Zhenxuan;
Yang, Yiming;
Bian, Jiming;
Wu, Huaqiang;
Zhang, Zengxing;
Zhang, David Wei

Publication type:

Article

Tuning the Structure, Magnetic, and High Frequency Properties of Sc‐Doped Sr0.5Ba0.5ScxFe12‐xO19/NiFe2O4 Hard/Soft Nanocomposites.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202101124

By:

Almessiere, Munirah A.;
Slimani, Yassine;
Algarou, Norah A.;
Vakhitov, Maksim G.;
Klygach, Denis S.;
Baykal, Abdulhadi;
Zubar, Tatyana I.;
Trukhanov, Sergei V.;
Trukhanov, Alex V.;
Attia, Hussein;
Sertkol, Murat;
Auwal, İsmail A.

Publication type:

Article

Tunable Charge‐Density PEDOT:PSS for Application in Post‐Synaptic Organic Neuromorphic Electrodes (Adv. Electron. Mater. 2/2022).

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202270005

By:

Barbosa, Henrique F. P.;
Higuita, Germán D. Gómez;
Günther, Florian;
Faria, Gregório C.

Publication type:

Article

Reliability Issues of Thin Film Transistors Subject to Electrostatic Discharge Stresses: An Overview.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100886

By:

Yan, Yan;
Lan, Wenrui;
Chen, Yuankang;
Yang, Dongbu;
Zhou, Ye;
Zhu, Zhihua;
Liou, Juin J

Publication type:

Article

Electromagnetic Shielding Triboelectric Yarns for Human–Machine Interacting.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202101130

By:

Shen, Shen;
Yi, Jia;
Cheng, Renwei;
Ma, Liyun;
Sheng, Feifan;
Li, Huimin;
Zhang, Yihan;
Ning, Chuang;
Wang, Hongbo;
Dong, Kai;
Wang, Zhong Lin

Publication type:

Article

Realizing Diketopyrrolopyrrole Polymer‐Based Uniform Large‐Area Transistors for Active Circuit via Protonic Acid Mediated Molecular Self‐Assembly.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100881

By:

Liu, Yanwei;
Zhao, Zhiyuan;
Zhu, Mingliang;
Huang, Xin;
Wei, Xiaofang;
Chen, Huajie;
Chen, Jinyang;
Guo, Yunlong;
Liu, Yunqi

Publication type:

Article

The Role of the Internal Capacitance in Organic Memristive Device for Neuromorphic and Sensing Applications.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202101319

By:

Battistoni, Silvia;
Cocuzza, Matteo;
Marasso, Simone Luigi;
Verna, Alessio;
Erokhin, Victor

Publication type:

Article

Photoelectric Dual Response Nonvolatile Memory Device Based on Black Phosphorus Quantum Dots and Fullerene Derivative Composite.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202101143

By:

Li, Jinyong;
Hou, Jie;
Zhang, Bin;
Chen, Yu

Publication type:

Article

Enhancement of Interfacial Polarization in BaTiO3 Thin Films via Oxygen Inhomogeneity.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100876

By:

Li, Zhipeng;
Zhang, Zeyu;
Liu, Jia;
Zhu, Ruixue;
Ge, Binghui;
Li, Yueliang;
Zhang, Xin;
Gao, Peng;
Wang, Dawei;
Xu, Xiaoguang;
Tian, Wenhuai;
Jiang, Yong

Publication type:

Article

Volatility Transition from Short‐Term to Long‐Term Photonic Transistor Memory by Using Smectic Liquid Crystalline Molecules as a Floating Gate.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202101123

By:

Li, Guan‐Syuan;
Hung, Chih‐Chien;
Chiang, Yun‐Chi;
Lin, Yan‐Cheng;
Yang, Yun‐Fang;
Yang, Wei‐Chen;
Yen, Hao‐Chi;
Chen, Chun‐Kai;
Hsu, Li‐Che;
Chen, Wen‐Chang

Publication type:

Article

Metallic Ferromagnet of La0.5Sr0.5MnO3 with Negative Permittivity and Permeability.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202101020

By:

Yan, Kelan;
Shen, Liming;
Yin, Feng;
Qi, Guicun;
Zhang, Xiaohong;
Fan, Runhua;
Bao, Ningzhong

Publication type:

Article

From Chlorinated Solvents to Branched Polyethylene: Solvent‐Induced Phase Separation for the Greener Processing of Semiconducting Polymers.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100928

By:

Wu, Yunyun;
Ocheje, Michael U.;
Mechael, Sara S.;
Wang, Yunfei;
Landry, Eric;
Gu, Xiaodan;
Xiang, Peng;
Carmichael, Tricia Breen;
Rondeau‐Gagné, Simon

Publication type:

Article

A Spiking Stochastic Neuron Based on Stacked InGaZnO Memristors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100918

By:

Mao, Huiwu;
He, Yongli;
Chen, Chunsheng;
Zhu, Li;
Zhu, Yixin;
Zhu, Ying;
Ke, Shuo;
Wang, Xiangjing;
Wan, Changjin;
Wan, Qing

Publication type:

Article

Organic Synaptic Diodes Based on Polymeric Mixed Ionic‐Electronic Conductors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100866

By:

Gärisch, Fabian;
Ligorio, Giovanni;
Klein, Patrick;
Forster, Michael;
Scherf, Ullrich;
List‐Kratochvil, Emil J. W.

Publication type:

Article

Tunable Charge‐Density PEDOT:PSS for Application in Post‐Synaptic Organic Neuromorphic Electrodes.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100864

By:

Barbosa, Henrique F. P.;
Higuita, Germán D. Gómez;
Günther, Florian;
Faria, Gregório C.

Publication type:

Article

The Unusual Dielectric Response of Large Area Molecular Tunnel Junctions Probed with Impedance Spectroscopy.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100495

By:

Chen, Xiaoping;
Nijhuis, Christian A.

Publication type:

Article

Ultrathin Anion Conductors Based Memristor.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100845

By:

Xiong, Xuya;
Xiong, Feng;
Tian, He;
Wang, Zegao;
Wang, Yuqing;
Tao, Rui;
Klausen, Lasse Hyldgaard;
Dong, Mingdong

Publication type:

Article

Observation of the Pinch‐Off Effect during Electrostatically Gating the Metal‐Insulator Transition.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100842

By:

Yajima, Takeaki;
Toriumi, Akira

Publication type:

Article

WSe2 N‐Type Negative Capacitance Field‐Effect Transistor with Indium Low Schottky Barrier Contact.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100829

By:

Dong, Jianguo;
Sheng, Zhe;
Yu, Rui;
Hu, Wennan;
Wang, Yue;
Sun, Haoran;
Zhang, David Wei;
Zhou, Peng;
Zhang, Zengxing

Publication type:

Article

Deep‐Submicrometer Complementary Metal‐Oxide‐Semiconductor Transistors Based on Carbon Nanotube Films.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100751

By:

Shi, Huiwen;
Ding, Li;
Zhong, Donglai;
Peng, Lian‐Mao;
Zhang, Zhiyong

Publication type:

Article

Tunable Two‐Channel Magnetotransport in SrRuO3 Ultrathin Films Achieved by Controlling the Kinetics of Heterostructure Deposition.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100804

By:

Ko, Eun Kyo;
Lee, Han Gyeol;
Lee, Sangmin;
Mun, Junsik;
Kim, Jinkwon;
Lee, Ji Hye;
Kim, Tae Heon;
Chung, Jin‐Seok;
Chung, Suk Bum;
Park, Sang Hwa;
Yang, Sang Mo;
Kim, Miyoung;
Chang, Seo Hyoung;
Noh, Tae Won

Publication type:

Article

The High‐Pressure Processed Cu2S: Phase Intergrowth with Strained Lamella Leading to an Improved Thermoelectric Performance.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100835

By:

Luo, Hao;
Yang, Dongwang;
Yu, Yimeng;
Liang, Qi;
Peng, Haoyang;
Xia, Fanjie;
Tang, Xinfeng;
Wu, Jinsong

Publication type:

Article

Light and Thermally Induced Charge Transfer and Ejection of Micro‐/Nanoparticles from Ferroelectric Crystal Surfaces.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100761

By:

Sebastián‐Vicente, Carlos;
García‐Cabañes, Angel;
Agulló‐López, Fernando;
Carrascosa, Mercedes

Publication type:

Article

Origin of Relaxor Behavior in Barium‐Titanate‐Based Lead‐Free Perovskites.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100812

By:

Veerapandiyan, Vignaswaran;
Popov, Maxim N.;
Mayer, Florian;
Spitaler, Jürgen;
Svirskas, Sarunas;
Kalendra, Vidmantas;
Lins, Jonas;
Canu, Giovanna;
Buscaglia, Maria Teresa;
Pasciak, Marek;
Banys, Juras;
Groszewicz, Pedro B.;
Buscaglia, Vincenzo;
Hlinka, Jiri;
Deluca, Marco

Publication type:

Article

On the Optoelectronic Mechanisms Ruling Ti‐hyperdoped Si Photodiodes.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100788

By:

García‐Hemme, Eric;
Caudevilla, Daniel;
Algaidy, Sari;
Pérez‐Zenteno, Francisco;
García‐Hernansanz, Rodrigo;
Olea, Javier;
Pastor, David;
del Prado, Álvaro;
San Andrés, Enrique;
Mártil, Ignacio;
González‐Díaz, Germán

Publication type:

Article

Flexible Threshold Switching Selectors with Ultrahigh Endurance Based on Halide Perovskites.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100771

By:

Tang, Lingzhi;
Huang, Yang;
Wang, Chen;
Zhao, Zhenxuan;
Yang, Yiming;
Bian, Jiming;
Wu, Huaqiang;
Zhang, Zengxing;
Zhang, David Wei

Publication type:

Article

Organic Log‐Domain Integrator Synapse.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100724

By:

Hosseini, Mohammad Javad Mirshojaeian;
Donati, Elisa;
Indiveri, Giacomo;
Nawrocki, Robert A.

Publication type:

Article

Highly Stable Forming‐Free Bipolar Resistive Switching in Cu Layer Stacked Amorphous Carbon Oxide: Transition between CC Bonding Complexes.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100660

By:

Hyeon, Da Seul;
Jang, Gabriel;
Min, SunHwa;
Hong, Jin Pyo

Publication type:

Article

Releasable AlGaN/GaN 2D Electron Gas Heterostructure Membranes for Flexible Wide‐Bandgap Electronics.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100652

By:

Zhang, Yi‐Yu;
An, Shu;
Zheng, Yixiong;
Lai, Junyu;
Seo, Jung‐Hun;
Lee, Kwang Hong;
Kim, Munho

Publication type:

Article

High Speed Response Organic Photodetectors with Cascade Buffer Layers.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100539

By:

Suganuma, Naotoshi;
Heo, Chul‐Joon;
Minami, Daiki;
Yun, Sungyoung;
Park, Sungjun;
Lim, Younhee;
Fang, Feifei;
Choi, Byoungki;
Park, Kyung‐Bae

Publication type:

Article

Sulfurization Engineering of One‐Step Low‐Temperature MoS2 and WS2 Thin Films for Memristor Device Applications.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100515

By:

Gu, Yuqian;
Serna, Martha I.;
Mohan, Sivasakthya;
Londoño‐Calderon, Alejandra;
Ahmed, Taimur;
Huang, Yifu;
Lee, Jack;
Walia, Sumeet;
Pettes, Michael T.;
Liechti, Kenneth M.;
Akinwande, Deji

Publication type:

Article

Works matching IS 2199160X AND DT 2022 AND VI 8 AND IP 2

Masthead: (Adv. Electron. Mater. 2/2022).

Reliability Issues of Thin Film Transistors Subject to Electrostatic Discharge Stresses: An Overview (Adv. Electron. Mater. 2/2022).

High Speed Response Organic Photodetectors with Cascade Buffer Layers (Adv. Electron. Mater. 2/2022).

Achieving Large Switchable Polarization and Enhanced Piezoelectric Response in BiFeO<sub>3</sub>‐PbTiO<sub>3</sub> Solid Solution Ceramics.

Flexible Threshold Switching Selectors with Ultrahigh Endurance Based on Halide Perovskites (Adv. Electron. Mater. 2/2022).

Tuning the Structure, Magnetic, and High Frequency Properties of Sc‐Doped Sr<sub>0.5</sub>Ba<sub>0.5</sub>Sc<sub>x</sub>Fe<sub>12‐</sub><sub>x</sub>O<sub>19</sub>/NiFe<sub>2</sub>O<sub>4</sub> Hard/Soft Nanocomposites.

Tunable Charge‐Density PEDOT:PSS for Application in Post‐Synaptic Organic Neuromorphic Electrodes (Adv. Electron. Mater. 2/2022).

Reliability Issues of Thin Film Transistors Subject to Electrostatic Discharge Stresses: An Overview.

Electromagnetic Shielding Triboelectric Yarns for Human–Machine Interacting.

Realizing Diketopyrrolopyrrole Polymer‐Based Uniform Large‐Area Transistors for Active Circuit via Protonic Acid Mediated Molecular Self‐Assembly.

The Role of the Internal Capacitance in Organic Memristive Device for Neuromorphic and Sensing Applications.

Photoelectric Dual Response Nonvolatile Memory Device Based on Black Phosphorus Quantum Dots and Fullerene Derivative Composite.

Enhancement of Interfacial Polarization in BaTiO<sub>3</sub> Thin Films via Oxygen Inhomogeneity.

Volatility Transition from Short‐Term to Long‐Term Photonic Transistor Memory by Using Smectic Liquid Crystalline Molecules as a Floating Gate.

Metallic Ferromagnet of La<sub>0.5</sub>Sr<sub>0.5</sub>MnO<sub>3</sub> with Negative Permittivity and Permeability.

From Chlorinated Solvents to Branched Polyethylene: Solvent‐Induced Phase Separation for the Greener Processing of Semiconducting Polymers.

A Spiking Stochastic Neuron Based on Stacked InGaZnO Memristors.

Organic Synaptic Diodes Based on Polymeric Mixed Ionic‐Electronic Conductors.

Tunable Charge‐Density PEDOT:PSS for Application in Post‐Synaptic Organic Neuromorphic Electrodes.

The Unusual Dielectric Response of Large Area Molecular Tunnel Junctions Probed with Impedance Spectroscopy.

Ultrathin Anion Conductors Based Memristor.

Observation of the Pinch‐Off Effect during Electrostatically Gating the Metal‐Insulator Transition.

WSe<sub>2</sub> N‐Type Negative Capacitance Field‐Effect Transistor with Indium Low Schottky Barrier Contact.

Deep‐Submicrometer Complementary Metal‐Oxide‐Semiconductor Transistors Based on Carbon Nanotube Films.

Tunable Two‐Channel Magnetotransport in SrRuO<sub>3</sub> Ultrathin Films Achieved by Controlling the Kinetics of Heterostructure Deposition.

The High‐Pressure Processed Cu<sub>2</sub>S: Phase Intergrowth with Strained Lamella Leading to an Improved Thermoelectric Performance.

Light and Thermally Induced Charge Transfer and Ejection of Micro‐/Nanoparticles from Ferroelectric Crystal Surfaces.

Origin of Relaxor Behavior in Barium‐Titanate‐Based Lead‐Free Perovskites.

On the Optoelectronic Mechanisms Ruling Ti‐hyperdoped Si Photodiodes.

Flexible Threshold Switching Selectors with Ultrahigh Endurance Based on Halide Perovskites.

Organic Log‐Domain Integrator Synapse.

Highly Stable Forming‐Free Bipolar Resistive Switching in Cu Layer Stacked Amorphous Carbon Oxide: Transition between CC Bonding Complexes.

Releasable AlGaN/GaN 2D Electron Gas Heterostructure Membranes for Flexible Wide‐Bandgap Electronics.

High Speed Response Organic Photodetectors with Cascade Buffer Layers.

Sulfurization Engineering of One‐Step Low‐Temperature MoS<sub>2</sub> and WS<sub>2</sub> Thin Films for Memristor Device Applications.