Works matching IS 2199160X AND DT 2022 AND VI 8 AND IP 11

Results: 53

Oxygen‐Scavenging Effects of Added Ti Layer in the TiN Gate of Metal‐Ferroelectric‐Insulator‐Semiconductor Capacitor with Al‐Doped HfO2 Ferroelectric Film (Adv. Electron. Mater. 11/2022).

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200310

By:

Lee, Yong Bin;
Kim, Beom Yong;
Park, Hyeon Woo;
Lee, Suk Hyun;
Oh, Minsik;
Ryoo, Seung Kyu;
Lee, In Soo;
Byun, Seungyong;
Shim, Doosup;
Lee, Jae Hoon;
Kim, Hani;
Kim, Kyung Do;
Park, Min Hyuk;
Hwang, Cheol Seong

Publication type:

Article

Development of Air‐Stable Photomultiplication‐Type Organic Photodetector and Analysis of Active Layer using Removable Top Electrode (Adv. Electron. Mater. 11/2022).

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202270058

By:

Shimanoe, Shuhei;
Fukuda, Kenjiro;
Someya, Takao;
Yokota, Tomoyuki

Publication type:

Article

Realizing High Thermoelectric Performance of Ag/Al Co‐Doped Polycrystalline SnSe through Band Structure Modification and Hydrogen Reduction (Adv. Electron. Mater. 11/2022).

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202270055

By:

Xin, Nan;
Tang, Guihua;
Li, Yifei;
Shen, Hao;
Nie, Yinan;
Zhang, Min;
Zhao, Xin

Publication type:

Article

Masthead: (Adv. Electron. Mater. 11/2022).

Published in:: Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202270057
Publication type:: Article

Highly Thermally Resilient Dual‐Mode (Digital/Analog) Amorphous Yttrium Fluoride Memristors Exhibiting Excellent Symmetric Linearity.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200922

By:

Shi, Zhe‐Min;
Hou, Yu‐Che;
Chen, Cheng‐Yueh;
Tan, Guang‐Hsun;
Lin, Hao‐Cheng;
Lai, Po‐Ting;
Hou, Cheng‐Hung;
Shyue, Jing‐Jong;
Cheng, Wei‐Kai;
Su, Tsung‐Kai;
Lin, Hao‐Wu

Publication type:

Article

Heterosynaptic Plasticity Achieved by Highly Anisotropic Ionic Migration in Layered LixMoO3 for Neuromorphic Application (Adv. Electron. Mater. 11/2022)

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200721

By:

Qin, Jing‐Kai;
Zhu, Bing‐Xuan;
Wang, Cong;
Zhu, Cheng‐Yi;
Sun, Ruo‐Yao;
Zhen, Liang;
Chai, Yang;
Xu, Cheng‐Yan

Publication type:

Article

Oxygen‐Scavenging Effects of Added Ti Layer in the TiN Gate of Metal‐Ferroelectric‐Insulator‐Semiconductor Capacitor with Al‐Doped HfO2 Ferroelectric Film (Adv. Electron. Mater. 11/2022)

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200310

By:

Lee, Yong Bin;
Kim, Beom Yong;
Park, Hyeon Woo;
Lee, Suk Hyun;
Oh, Minsik;
Ryoo, Seung Kyu;
Lee, In Soo;
Byun, Seungyong;
Shim, Doosup;
Lee, Jae Hoon;
Kim, Hani;
Kim, Kyung Do;
Park, Min Hyuk;
Hwang, Cheol Seong

Publication type:

Article

Nonvolatile Logic‐in‐Memory Computing based on Solution‐Processed CuI Memristor (Adv. Electron. Mater. 11/2022).

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202270060

By:

Li, Bochang;
Wei, Wei;
Luo, Li;
Gao, Ming;
Yu, Zhi Gen;
Li, Sifan;
Ang, Kah‐Wee;
Zhu, Chunxiang

Publication type:

Article

Heterosynaptic Plasticity Achieved by Highly Anisotropic Ionic Migration in Layered LixMoO3 for Neuromorphic Application (Adv. Electron. Mater. 11/2022).

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200721

By:

Qin, Jing‐Kai;
Zhu, Bing‐Xuan;
Wang, Cong;
Zhu, Cheng‐Yi;
Sun, Ruo‐Yao;
Zhen, Liang;
Chai, Yang;
Xu, Cheng‐Yan

Publication type:

Article

Quantifying the Effects of Inhomogeneity and Doping on the Electronic Contribution to Thermal Conductivity in Semiconducting Polymers.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200846

By:

Hanus, Riley;
Gregory, Shawn A.;
Adams, Michael J.;
Graham, Samuel;
Yee, Shannon K.

Publication type:

Article

Dynamic Control of Piezoelectricity Enhancement via Modulation of the Bulk Photovoltaic Effect in a BiFeO3 Thin Film.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200785

By:

Heo, Yooun;
Zhang, Hangbo;
Alexe, Marin

Publication type:

Article

Combined Tactics for Elevating the Thermoelectric Performance of CaMg2Sb2‐Based p‐type Materials.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200742

By:

Shi, Xin;
Deng, Liangzi;
Liang, Zhongxin;
Song, Shaowei;
Xu, Congcong;
Wang, Dezhi;
Chu, Ching‐Wu;
Singh, David J.;
Ren, Zhifeng

Publication type:

Article

Fabrication of Electronics by Electrohydrodynamic Jet Printing.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200728

By:

Zhou, Haihua;
Song, Yanlin

Publication type:

Article

Investigation of Optimum Deposition Conditions of Radio Frequency Reactive Magnetron Sputtering of Al0.7Sc0.3N Film with Thickness down to 20 nm.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200726

By:

Ryoo, Seung Kyu;
Kim, Kyung Do;
Park, Hyeon Woo;
Lee, Yong Bin;
Lee, Suk Hyun;
Lee, In Soo;
Byun, Seungyong;
Shim, Doosup;
Lee, Jae Hoon;
Kim, Hani;
Jang, Yoon Ho;
Park, Min Hyuk;
Hwang, Cheol Seong

Publication type:

Article

Heterosynaptic Plasticity Achieved by Highly Anisotropic Ionic Migration in Layered LixMoO3 for Neuromorphic Application.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200721

By:

Qin, Jing‐Kai;
Zhu, Bing‐Xuan;
Wang, Cong;
Zhu, Cheng‐Yi;
Sun, Ruo‐Yao;
Zhen, Liang;
Chai, Yang;
Xu, Cheng‐Yan

Publication type:

Article

Mechanism Analysis and Highly Scaled Aluminum Nitride‐Based Self‐Rectifying Memristors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200702

By:

Zhang, Kailiang;
Zhao, Xuanyu;
Han, Yemei;
Hu, Kai;
Zhang, Yujian;
Li, Lianqiu;
Zhou, Qiaozhen;
Shan, Xin;
Lin, Xin;
Shan, Ke;
Ma, Zexia;
Liu, Qi;
Song, Zhitang;
Wang, Fang

Publication type:

Article

Highly Stretchable, Breathable, and Self‐Powered Strain‐Temperature Dual‐Functional Sensors with Laminated Structure for Health Monitoring, Hyperthermia, and Physiotherapy Applications.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200680

By:

Wen, Ningxuan;
Fan, Zeng;
Yang, Shuaitao;
Guo, Yuan;
Zhang, Jianwei;
Lei, Bowen;
Zhao, Yongpeng;
Cong, Tianze;
Li, Chengwei;
Jing, Zhenguo;
Pan, Lujun

Publication type:

Article

Antimony‐Doped p‐Type In2Se3 for Heterophase Homojunction with High‐Performance Reconfigurable Broadband Photovoltaic Effect.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200665

By:

Li, Shasha;
Wang, Bing;
Li, Lixia;
Li, Jie;
Wang, Mengna;
Luo, Gaoli;
Ren, Xiao;
Yan, Yong;
Li, Jingbo

Publication type:

Article

Quantum Linear Magnetoresistance and Nontrivial Berry Phase in High‐Mobility Elemental Tellurium.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200653

By:

Ji, Yi;
Wang, Bin;
Li, Chushan;
Zuo, Huakun;
Yi, Enkui;
Jin, Gangjian;
Guo, Donghui;
Shen, Bing;
Zhong, Dingyong;
Wang, Huichao

Publication type:

Article

Property Regulation Principle in Mn‐Doped BF–BT Ceramics: Competitive Control of Domain Switching By Defect Dipoles and Domain Configuration.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200609

By:

Li, Bing;
Li, Chongyang;
Zheng, Ting;
Wu, Jiagang

Publication type:

Article

Development of Air‐Stable Photomultiplication‐Type Organic Photodetector and Analysis of Active Layer using Removable Top Electrode.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200651

By:

Shimanoe, Shuhei;
Fukuda, Kenjiro;
Someya, Takao;
Yokota, Tomoyuki

Publication type:

Article

Efficient Room‐Temperature Voltage Control of Picosecond Optical Spin Orientation Using a III‐V Semiconductor Nanostructure.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200588

By:

Park, Soyoung;
Hiura, Satoshi;
Takayama, Junichi;
Sueoka, Kazuhisa;
Murayama, Akihiro

Publication type:

Article

Realizing High Thermoelectric Performance of Ag/Al Co‐Doped Polycrystalline SnSe through Band Structure Modification and Hydrogen Reduction.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200577

By:

Xin, Nan;
Tang, Guihua;
Li, Yifei;
Shen, Hao;
Nie, Yinan;
Zhang, Min;
Zhao, Xin

Publication type:

Article

Polarization Rotation Control Domain Dynamic Response Modulates Piezoelectric Properties of Lead‐Free Thin Films.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200611

By:

Zhu, Kun;
Ge, Guanglong;
Lin, Jinfeng;
Bai, Hairui;
Shi, Cheng;
Li, Guohui;
Yan, Fei;
Xu, Liuxue;
Yang, Weiwei;
Zeng, Huarong;
Zhao, Kunyu;
Man, Zhenyong;
Wang, Feifei;
Shen, Bo;
Zhai, Jiwei;
Chou, Xiujian

Publication type:

Article

Hydrogel‐Based Real‐Time Wireless Liquid Level Monitoring System for Size‐Independent Infusion Bags.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200473

By:

Shin, Jonghwan;
Lee, Mingoo;
Gupta, Dipti;
Kim, Sunkook;
Gandla, Srinivas

Publication type:

Article

Flexible Active Crossbar Arrays Using Amorphous Oxide Semiconductor Technology toward Artificial Neural Networks Hardware.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200642

By:

Pereira, Maria Elias;
Deuermeier, Jonas;
Figueiredo, Cátia;
Santos, Ângelo;
Carvalho, Guilherme;
Tavares, Vítor Grade;
Martins, Rodrigo;
Fortunato, Elvira;
Barquinha, Pedro;
Kiazadeh, Asal

Publication type:

Article

Negative Capacitance Phenomenon and Origin in Alkali Niobate Film with Self‐Assembled Lattice Faults.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200633

By:

Waqar, Moaz;
Yang, Ping;
He, Qian;
Yao, Kui;
Wang, John

Publication type:

Article

Resistive Switching of Self‐Assembled Silver Nanowire Networks Governed by Environmental Conditions.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200631

By:

Diaz Schneider, Juan Ignacio;
Angelomé, Paula Cecilia;
Granja, Leticia Paula;
Quinteros, Cynthia Paula;
Levy, Pablo Eduardo;
Martínez, Eduardo David

Publication type:

Article

Ambient‐Stable Near‐Infrared Organic Photodetectors with Ultrahigh Detectivity and Ultrafast Response for Biometric Monitoring.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200585

By:

Yu, Yang‐Yen;
Liu, Chao‐I;
Peng, Yan‐Cheng;
Jiang, Bing‐Huang;
Su, Yu‐Wei;
Liu, Song‐Jhe;
Chen, Chih‐Ping

Publication type:

Article

Ambipolar Organic Field‐Effect Transistors and Complementary Circuits Based on Single Crystals with Alcohol Treatment.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200557

By:

Lin, Chengce;
Peng, Boyu;
Wu, Jiake;
Huang, Zhuoting;
Chen, Min;
Hu, Dapeng;
Ke, Shifeng;
Tee, Benjamin Chee Keong;
Li, Hanying

Publication type:

Article

Energy Harvest in Ferromagnet‐Embedded Surface Acoustic Wave Devices.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200593

By:

Chen, Chong;
Fu, Sulei;
Han, Lei;
Su, Rongxuan;
Liu, Peisen;
Chen, Ruyi;
Zhu, Wenxuan;
Liao, Liyang;
Pan, Feng;
Song, Cheng

Publication type:

Article

Gate‐Tunable Photovoltaic Behavior and Polarized Image Sensor Based on All‐2D TaIrTe4/MoS2 Van Der Waals Schottky Diode.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200551

By:

Zhang, Li;
Han, Xiaoning;
Zhang, Shihao;
Wang, Hanyu;
Huang, Ying;
Zheng, Zhaoqiang;
Huo, Nengjie;
Gao, Wei;
Li, Jingbo

Publication type:

Article

Strategies to Control the Relaxation Kinetics of Ag‐Based Diffusive Memristors and Implications for Device Operation.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200549

By:

Chekol, Solomon Amsalu;
Menzel, Stephan;
Waser, Rainer;
Hoffmann‐Eifert, Susanne

Publication type:

Article

Thermal Enhanced Resistive Switching Performance of <100>‐oriented Perovskite [(TZ‐H)2(PbBr4)]n with High Working Temperature: a Triazolium/(PbBr4)n2n– Interfacial Interaction Insight

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200537

By:

Song, Kaiyue;
Chen, Binjun;
Lin, Xiaoli;
Yang, Hailong;
Liu, Yue;
Liu, Yuanzheng;
Li, Haohong;
Chen, Zhirong

Publication type:

Article

Influence of Tetraphenylbenzene on the OFET Behavior of Triarylamines.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200484

By:

Devibala, Panneerselvam;
Imran, Predhanekar Mohamed;
Bhuvanesh, Nattamai S.P.;
Nagarajan, Samuthira

Publication type:

Article

Large Exchange Bias, High Dielectric Constant, and Outstanding Ionic Conductivity in a Single‐Phase Spin Glass.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200483

By:

Ghazanfari, Mohammad R.;
Santhosh, Archa;
Siemensmeyer, Konrad;
Fuß, Friederike;
Staab, Lennart;
Vrijmoed, Johannes C.;
Peters, Bertram;
Liesegang, Moritz;
Dehnen, Stefanie;
Oeckler, Oliver;
Jerabek, Paul;
Thiele, Günther

Publication type:

Article

Sensitive Detection of Alcohol Isomers by Ionically Conductive Metal‐Organic Frameworks.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200542

By:

Li, Li;
Zhang, Shiqi;
Lu, Yang;
Zhang, Junyao;
Zhang, Xuan;
Huang, Jia

Publication type:

Article

Inkjet‐Printed, Deep Subthreshold Operated Pseudo‐CMOS Inverters with High Voltage Gain and Low Power Consumption.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200528

By:

Pradhan, Jyoti Ranjan;
Singh, Manvendra;
Dasgupta, Subho

Publication type:

Article

Achieving Excellent Energy Storage Properties in Fine‐Grain High‐Entropy Relaxor Ferroelectric Ceramics.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200503

By:

Guo, Jian;
Xiao, Wenrong;
Zhang, Xiaoyu;
Zhang, Ji;
Wang, Jing;
Zhang, Guangzu;
Zhang, Shan‐Tao

Publication type:

Article

Demonstration of PdSe2 CMOS Using Same Metal Contact in PdSe2 n‐/p‐MOSFETs through Thickness‐Dependent Phase Transition.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200485

By:

Seo, Jae Eun;
Park, Eunpyo;
Das, Tanmoy;
Kwak, Joon Young;
Chang, Jiwon

Publication type:

Article

Implementing Complex Oxides for Efficient Room‐Temperature Spin–Orbit Torque Switching.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200514

By:

Tang, Aihua;
Xu, Teng;
Liu, Shengsheng;
Liang, Yuhan;
Chen, Hetian;
Yan, Dayu;
Shi, Youguo;
Yu, Pu;
Yu, Rong;
Lin, Yuanhua;
Nan, Tianxiang;
Jiang, Wanjun;
Yi, Di

Publication type:

Article

Transport Spectroscopy of Ultraclean Tunable Band Gaps in Bilayer Graphene.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200510

By:

Icking, Eike;
Banszerus, Luca;
Wörtche, Frederike;
Volmer, Frank;
Schmidt, Philipp;
Steiner, Corinne;
Engels, Stephan;
Hesselmann, Jonas;
Goldsche, Matthias;
Watanabe, Kenji;
Taniguchi, Takashi;
Volk, Christian;
Beschoten, Bernd;
Stampfer, Christoph

Publication type:

Article

Unraveling the Atomic Redox Process in Quantum Conductance and Synaptic Events for Neuromorphic Computing.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200509

By:

Krishnan, Karthik;
Vijayaraghavan, Saranyan

Publication type:

Article

Forming‐Free, Self‐Compliance, Bipolar Multi‐Level Resistive Switching in WO3–x Based MIM Device.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200250

By:

Rudrapal, Krishna;
Bhattacharya, Gourab;
Adyam, Venimadhav;
Roy Chaudhuri, Ayan

Publication type:

Article

Ferromagnetic Order in Semiconducting Cr‐Doped α‐MnTe Nanosheets Grown by Chemical Vapor Deposition.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200451

By:

Zhang, Zheshan;
Dong, Xinyue;
Gao, Zhansheng;
Chen, Jiabiao;
Wang, Bing;
Fu, Huixia;
Du, Yaping;
Luo, Feng;
Wu, Jinxiong

Publication type:

Article

Ferroelasticity Mediated Energy Conversion in Strained Perovskite Films.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200415

By:

Jiao, Yinan;
Qin, Shengjian;
Li, Bing;
Hao, Weizhong;
Wang, Ye;
Li, Hao;
Yang, Zhanping;
Dong, Dejun;
Li, Xiangyu;
Zhao, Jinjin

Publication type:

Article

Nonvolatile Logic‐in‐Memory Computing based on Solution‐Processed CuI Memristor.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200089

By:

Li, Bochang;
Wei, Wei;
Luo, Li;
Gao, Ming;
Yu, Zhi Gen;
Li, Sifan;
Ang, Kah‐Wee;
Zhu, Chunxiang

Publication type:

Article

Oxygen‐Scavenging Effects of Added Ti Layer in the TiN Gate of Metal‐Ferroelectric‐Insulator‐Semiconductor Capacitor with Al‐Doped HfO2 Ferroelectric Film.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200310

By:

Lee, Yong Bin;
Kim, Beom Yong;
Park, Hyeon Woo;
Lee, Suk Hyun;
Oh, Minsik;
Ryoo, Seung Kyu;
Lee, In Soo;
Byun, Seungyong;
Shim, Doosup;
Lee, Jae Hoon;
Kim, Hani;
Kim, Kyung Do;
Park, Min Hyuk;
Hwang, Cheol Seong

Publication type:

Article

π‐Extended Zigzag‐Shaped Diphenanthrene‐Based p‐Type Semiconductors Exhibiting Small Effective Masses.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200452

By:

Mitani, Masato;
Kumagai, Shohei;
Yu, Craig P.;
Oi, Ayako;
Yamagishi, Masakazu;
Nishinaga, Shuhei;
Mori, Hiroki;
Nishihara, Yasushi;
Hashizume, Daisuke;
Kurosawa, Tadanori;
Ishii, Hiroyuki;
Kobayashi, Nobuhiko;
Takeya, Jun;
Okamoto, Toshihiro

Publication type:

Article

The Effect of Deposition Conditions on Heterointerface‐Driven Band Alignment and Resistive Switching Properties.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200220

By:

Yong, Zhihua;
Ram, Mamidala Saketh;
Persson, Karl‐Magnus;
Subramanian, Gomathy Sandhya;
Wernersson, Lars‐Erik;
Pan, Jisheng

Publication type:

Article