Works matching IS 2199160X AND DT 2022 AND VI 8 AND IP 1

Results: 39

Masthead: (Adv. Electron. Mater. 1/2022).

Published in:: Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202270003
Publication type:: Article

Non‐Volatile Photo‐Switch Using a Diamond pn Junction (Adv. Electron. Mater. 1/2022).

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202270004

By:

Masante, Cédric;
Kah, Martin;
Hébert, Clément;
Rouger, Nicolas;
Pernot, Julien

Publication type:

Article

Monolithic Multi‐Color Tunable Inorganic Light‐Emitting Diodes (Adv. Electron. Mater. 1/2022).

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202270002

By:

Baek, Seung‐Hye;
Kim, Hee‐Wung;
Lee, Gun‐Woo;
Lee, Sung‐Nam

Publication type:

Article

Device Geometry Insights for Efficient Electrically Driven Insulator‐to‐Metal Transition in Vanadium Dioxide Thin‐Films (Adv. Electron. Mater. 1/2022).

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202270001

By:

Kabir, Sumaiya;
Nirantar, Shruti;
Monshipouri, Mahta;
Low, Mei Xian;
Walia, Sumeet;
Sriram, Sharath;
Bhaskaran, Madhu

Publication type:

Article

Organic Synaptic Transistors for Bio‐Hybrid Neuromorphic Electronics.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100935

By:

Kim, Kwan‐Nyeong;
Sung, Min‐Jun;
Park, Hea‐Lim;
Lee, Tae‐Woo

Publication type:

Article

Unconventional Resistive Switching Behavior in Fibroin‐Based Memristor.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100843

By:

Chang, Ke;
Dong, Anhua;
Yu, Xinna;
Liu, Binbin;
Zhao, Xinhui;
Wang, Renzhi;
Gan, Zhikai;
Jiang, Kang'an;
Niu, Yiru;
Dong, Xinyuan;
Zheng, Diyuan;
Li, Yizhen;
Bao, Peng;
Zhao, Zhuyikang;
Wang, Hui

Publication type:

Article

Boosting Room Temperature Tunnel Magnetoresistance in Hybrid Magnetic Tunnel Junctions Under Electric Bias.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100805

By:

González‐Ruano, César;
Tiusan, Coriolan;
Hehn, Michel;
Aliev, Farkhad G.

Publication type:

Article

Liquid Crystalline Rylenediimides with Highly Order Smectic Layer Structure as a Floating Gate for Multiband Photoresponding Photonic Transistor Memory.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100798

By:

Lin, Yi‐Sa;
Lin, Yan‐Cheng;
Yang, Wei‐Chen;
Li, Guan‐Syuan;
Ercan, Ender;
Hung, Chih‐Chien;
Chien, Wen‐Chen;
Chen, Wen‐Chang

Publication type:

Article

Crystal Phase Control during Epitaxial Hybridization of III‐V Semiconductors with Silicon.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100777

By:

Rio Calvo, Marta;
Rodriguez, Jean‐Baptiste;
Cornet, Charles;
Cerutti, Laurent;
Ramonda, Michel;
Trampert, Achim;
Patriarche, Gilles;
Tournié, Éric

Publication type:

Article

The van der Waals Epitaxy of High‐Quality N‐Polar Gallium Nitride for High‐Response Ultraviolet Photodetectors with Polarization Electric Field Modulation.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100759

By:

Chen, Yang;
Shi, Zhiming;
Zhang, Shanli;
Ben, Jianwei;
Jiang, Ke;
Zang, Hang;
Jia, Yuping;
Lü, Wei;
Li, Dabing;
Sun, Xiaojuan

Publication type:

Article

Large‐Area Endohedral Metallofullerene Single‐Crystal Arrays for High‐Performance Field‐Effect Transistors and Photodetectors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100753

By:

Su, Mingming;
Hu, Yajing;
Yang, Shaoting;
Yu, Ao;
Peng, Ping;
Yang, Le;
Jin, Peng;
Su, Bin;
Li, Fang‐Fang

Publication type:

Article

Amorphous‐Ga2O3 Optoelectronic Synapses with Ultra‐low Energy Consumption.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100741

By:

Zhu, Rui;
Liang, Huili;
Hu, Sigui;
Wang, Yan;
Mei, Zengxia

Publication type:

Article

Ligand Exchange and Impurity Doping in 2D CdSe Nanoplatelet Thin Films and Their Applications.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100739

By:

Lee, Woo Seok;
Kang, Yoon‐Gu;
Sharma, Manoj;
Lee, Yong Min;
Jeon, Sanghyun;
Sharma, Ashma;
Demir, Hilmi Volkan;
Han, Myung Joon;
Koh, Weon‐Kyu;
Oh, Soong Ju

Publication type:

Article

Selectively Defect‐Healed Graphene Electrodes for Tungsten Diselenide Thin‐Film Transistors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100729

By:

Kim, Tae In;
Park, Ick‐Joon

Publication type:

Article

Light‐Rewritable Logic Devices Based on Van der Waals Heterostructures.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100708

By:

Li, Songyu;
Chen, Xiaoqing;
Zhang, Zeyu;
Li, Xuhong;
Deng, Wenjie;
Liu, Famin;
Lu, Yue;
Zhang, Yongzhe

Publication type:

Article

Room Temperature Insulator‐to‐Metal Transition of VO2/TiO2 Epitaxial Bilayer Films Grown on M‐plane Sapphire Substrates.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100687

By:

Chen, Binjie;
Kim, Gowoon;
Cho, Hai Jun;
Ohta, Hiromichi

Publication type:

Article

Giant Enhancement of Spin‐Orbit Torque Efficiency in Pt/Co Bilayers by Inserting a WSe2 under Layer.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100684

By:

Xue, Hongwei;
Tang, Meng;
Zhang, Yu;
Ji, Zhihao;
Qiu, Xuepeng;
Zhang, Zongzhi

Publication type:

Article

Fourfold Polarization‐Sensitive Photodetector Based on GaTe/MoS2 van der Waals Heterojunction.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100673

By:

Tan, Jin;
Nan, Haiyan;
Fu, Quangui;
Zhang, Xiumei;
Liu, Xing;
Ni, Zhenhua;
Ostrikov, Kostya;
Xiao, Shaoqing;
Gu, Xiaofeng

Publication type:

Article

π–π Interactions Mediated Pyrene Based Ligand Enhanced Photoresponse in Hybrid Graphene/PbS Quantum Dots Photodetectors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100672

By:

Ahn, Seungbae;
Ingrosso, Chiara;
Panniello, Annamaria;
Striccoli, Marinella;
Bianco, Giuseppe Valerio;
Agostiano, Angela;
Bruno, Giovanni;
Curri, Maria Lucia;
Vazquez‐Mena, Oscar

Publication type:

Article

High Hole Mobility Inorganic Halide Perovskite Field‐Effect Transistors with Enhanced Phase Stability and Interfacial Defect Tolerance.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100624

By:

Lee, Yoon Jung;
Han, Ji Su;
Lee, Da Eun;
Lee, Tae Hyung;
Kim, Jae Young;
Suh, Jun Min;
Lee, Jung Hun;
Im, In Hyuk;
Kim, Seung Ju;
Kwak, Kyung Ju;
Jang, Ho Won

Publication type:

Article

Repairable Polymer Solid Electrolyte Gated MoS2 Field Effect Devices with Large Radiation Tolerance.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100619

By:

Chen, Di;
Li, Jiankun;
Wei, Zheng;
Wei, Xinjian;
Zhu, Maguang;
Liu, Jing;
Zhang, Guangyu;
Zhang, Zhiyong;
Chen, Jian‐Hao

Publication type:

Article

Significant Modulation of Ferroelectric Photovoltaic Behavior by a Giant Macroscopic Flexoelectric Effect Induced by Strain‐Relaxed Epitaxy.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100612

By:

Huang, Qicheng;
Fan, Zhen;
Rao, Jingjing;
Yang, Tieying;
Zhang, Xingmin;
Chen, Deyang;
Qin, Minghui;
Zeng, Min;
Lu, Xubing;
Zhou, Guofu;
Gao, Xingsen;
Liu, Jun‐Ming

Publication type:

Article

A Perspective on Collective Properties of Atoms on 2D Materials.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100607

By:

Del Maestro, Adrian;
Wexler, Carlos;
Vanegas, Juan M.;
Lakoba, Taras;
Kotov, Valeri N.

Publication type:

Article

Monolithic Multi‐Color Tunable Inorganic Light‐Emitting Diodes.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100598

By:

Baek, Seung‐Hye;
Kim, Hee‐Wung;
Lee, Gun‐Woo;
Lee, Sung‐Nam

Publication type:

Article

Sacrificial 3D Printing of Highly Porous, Soft Pressure Sensors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100597

By:

Alsharari, Meshari;
Chen, Baixin;
Shu, Wenmiao

Publication type:

Article

Graphene Superconductivity at Room‐Temperature of a Wide Range and Standard Atmosphere, Based on Vacuum Channels and White‐Light Interferometry.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100595

By:

ChunKan, Tao;
Rui, Tao;
Tianyou, Kang;
MengYao, Hu;
YuJing, Wu;
MingJie, Yang;
XiaoChun, Yang;
YePing, Wang;
YunSheng, Qian;
YiJun, Zhang

Publication type:

Article

Porous MOFs–Zinc Cobaltite/Carbon Composite Nanofibers for High Lithium Storage.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100592

By:

Dai, Zixin;
Long, Zhiwen;
Shi, Chu;
Wu, Caiqin;
Qiao, Hui;
Wang, Keliang

Publication type:

Article

Spin‐Orbit Torque and Interfacial Dzyaloshinskii–Moriya Interaction in Heavy Metal/Ferrimagnetic Insulator Deposited by Magnetron Sputtering.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100590

By:

Ye, Zhixiang;
Chen, Zhiren;
Chen, Zehan;
Jia, Wei;
Gao, Tenghua;
Liu, Lin;
Zheng, Hongnan;
Zeng, Qi;
Wang, Qiuning;
Wang, Ning;
Xiang, Boyuan;
Lin, Tao;
Qiu, Mingxia;
Li, Shunpu;
Shi, Ji;
Hou, Zhipeng;
Ando, Kazuya;
An, Hongyu

Publication type:

Article

Mapping the Progress in Flexible Electrodes for Wearable Electronic Textiles: Materials, Durability, and Applications.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100578

By:

Liman, Md Luthfar Rahman;
Islam, M. Tauhidul;
Hossain, Md Milon

Publication type:

Article

Room‐Temperature Multiferroicity and Magnetization Dynamics in Fe/BTO/LSMO Tunnel Junction.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100574

By:

Pawlak, Jakub;
Skowroński, Witold;
Żywczak, Antoni;
Przybylski, Marek

Publication type:

Article

Investigation of Interplay between Polyvinylpyrrolidone Interlayer and Perovskite Composition Affecting the Performance of Perovskite Light Emitting Diode.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100568

By:

Hyeon, Min Woo;
Ahn, Yunho;
Kim, Jungwon;
Kim, Jaeseung;
Kim, Hyunjung;
Suh, Min Chul

Publication type:

Article

Harnessing Phase Transitions in Antiferroelectric ZrO2 Using the Size Effect.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100556

By:

Lomenzo, Patrick D.;
Materano, Monica;
Mittmann, Terence;
Buragohain, Pratyush;
Gruverman, Alexei;
Kiguchi, Takanori;
Mikolajick, Thomas;
Schroeder, Uwe

Publication type:

Article

Graphene and MXene Based Free‐Standing Carbon Memristors for Flexible 2D Memory Applications.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100549

By:

Fatima, Sabeen;
Bin, Xu;
Mohammad, Mohammad Ali;
Akinwande, Deji;
Rizwan, Syed

Publication type:

Article

Non‐Volatile Photo‐Switch Using a Diamond pn Junction.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100542

By:

Masante, Cédric;
Kah, Martin;
Hébert, Clément;
Rouger, Nicolas;
Pernot, Julien

Publication type:

Article

Breaking Space Inversion‐Symmetry to Obtain Asymmetric Spin‐Wave Excitation in Systems with Nonuniform Magnetic Exchange.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100435

By:

Macêdo, Rair;
Kudinoor, Arjun S.;
Livesey, Karen L.;
Camley, Robert E.

Publication type:

Article

Device Geometry Insights for Efficient Electrically Driven Insulator‐to‐Metal Transition in Vanadium Dioxide Thin‐Films.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100428

By:

Kabir, Sumaiya;
Nirantar, Shruti;
Monshipouri, Mahta;
Low, Mei Xian;
Walia, Sumeet;
Sriram, Sharath;
Bhaskaran, Madhu

Publication type:

Article

Positive Effect of Parasitic Monoclinic Phase of Hf0.5Zr0.5O2 on Ferroelectric Endurance.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100420

By:

Song, Tingfeng;
Estandía, Saúl;
Tan, Huan;
Dix, Nico;
Gàzquez, Jaume;
Fina, Ignasi;
Sánchez, Florencio

Publication type:

Article

Structural Odd–Even Effect Impacting the Dimensionality of Transport in BTBT‐CnOH Organic Field Effect Transistors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100265

By:

Roche, Gilles H.;
Bruckner, Gudrun;
Dumitrescu, Dan G.;
Moreau, Joël J. E.;
van der Lee, Arie;
Wantz, Guillaume;
Dautel, Olivier J.

Publication type:

Article

Large Resistive Switching and Artificial Synaptic Behaviors in Layered Cs3Sb2I9 Lead‐Free Perovskite Memory Devices.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100237

By:

Paramanik, Subham;
Maiti, Abhishek;
Chatterjee, Soumyo;
Pal, Amlan J.

Publication type:

Article

Works matching IS 2199160X AND DT 2022 AND VI 8 AND IP 1

Masthead: (Adv. Electron. Mater. 1/2022).

Non‐Volatile Photo‐Switch Using a Diamond pn Junction (Adv. Electron. Mater. 1/2022).

Monolithic Multi‐Color Tunable Inorganic Light‐Emitting Diodes (Adv. Electron. Mater. 1/2022).

Device Geometry Insights for Efficient Electrically Driven Insulator‐to‐Metal Transition in Vanadium Dioxide Thin‐Films (Adv. Electron. Mater. 1/2022).

Organic Synaptic Transistors for Bio‐Hybrid Neuromorphic Electronics.

Unconventional Resistive Switching Behavior in Fibroin‐Based Memristor.

Boosting Room Temperature Tunnel Magnetoresistance in Hybrid Magnetic Tunnel Junctions Under Electric Bias.

Liquid Crystalline Rylenediimides with Highly Order Smectic Layer Structure as a Floating Gate for Multiband Photoresponding Photonic Transistor Memory.

Crystal Phase Control during Epitaxial Hybridization of III‐V Semiconductors with Silicon.

The van der Waals Epitaxy of High‐Quality N‐Polar Gallium Nitride for High‐Response Ultraviolet Photodetectors with Polarization Electric Field Modulation.

Large‐Area Endohedral Metallofullerene Single‐Crystal Arrays for High‐Performance Field‐Effect Transistors and Photodetectors.

Amorphous‐Ga<sub>2</sub>O<sub>3</sub> Optoelectronic Synapses with Ultra‐low Energy Consumption.

Ligand Exchange and Impurity Doping in 2D CdSe Nanoplatelet Thin Films and Their Applications.

Selectively Defect‐Healed Graphene Electrodes for Tungsten Diselenide Thin‐Film Transistors.

Light‐Rewritable Logic Devices Based on Van der Waals Heterostructures.

Room Temperature Insulator‐to‐Metal Transition of VO<sub>2</sub>/TiO<sub>2</sub> Epitaxial Bilayer Films Grown on M‐plane Sapphire Substrates.

Giant Enhancement of Spin‐Orbit Torque Efficiency in Pt/Co Bilayers by Inserting a WSe<sub>2</sub> under Layer.

Fourfold Polarization‐Sensitive Photodetector Based on GaTe/MoS<sub>2</sub> van der Waals Heterojunction.

π–π Interactions Mediated Pyrene Based Ligand Enhanced Photoresponse in Hybrid Graphene/PbS Quantum Dots Photodetectors.

High Hole Mobility Inorganic Halide Perovskite Field‐Effect Transistors with Enhanced Phase Stability and Interfacial Defect Tolerance.

Repairable Polymer Solid Electrolyte Gated MoS<sub>2</sub> Field Effect Devices with Large Radiation Tolerance.

Significant Modulation of Ferroelectric Photovoltaic Behavior by a Giant Macroscopic Flexoelectric Effect Induced by Strain‐Relaxed Epitaxy.

A Perspective on Collective Properties of Atoms on 2D Materials.

Monolithic Multi‐Color Tunable Inorganic Light‐Emitting Diodes.

Sacrificial 3D Printing of Highly Porous, Soft Pressure Sensors.

Graphene Superconductivity at Room‐Temperature of a Wide Range and Standard Atmosphere, Based on Vacuum Channels and White‐Light Interferometry.

Porous MOFs–Zinc Cobaltite/Carbon Composite Nanofibers for High Lithium Storage.

Spin‐Orbit Torque and Interfacial Dzyaloshinskii–Moriya Interaction in Heavy Metal/Ferrimagnetic Insulator Deposited by Magnetron Sputtering.

Mapping the Progress in Flexible Electrodes for Wearable Electronic Textiles: Materials, Durability, and Applications.

Room‐Temperature Multiferroicity and Magnetization Dynamics in Fe/BTO/LSMO Tunnel Junction.

Investigation of Interplay between Polyvinylpyrrolidone Interlayer and Perovskite Composition Affecting the Performance of Perovskite Light Emitting Diode.

Harnessing Phase Transitions in Antiferroelectric ZrO<sub>2</sub> Using the Size Effect.

Graphene and MXene Based Free‐Standing Carbon Memristors for Flexible 2D Memory Applications.

Non‐Volatile Photo‐Switch Using a Diamond pn Junction.

Breaking Space Inversion‐Symmetry to Obtain Asymmetric Spin‐Wave Excitation in Systems with Nonuniform Magnetic Exchange.

Device Geometry Insights for Efficient Electrically Driven Insulator‐to‐Metal Transition in Vanadium Dioxide Thin‐Films.

Positive Effect of Parasitic Monoclinic Phase of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> on Ferroelectric Endurance.

Structural Odd–Even Effect Impacting the Dimensionality of Transport in BTBT‐CnOH Organic Field Effect Transistors.

Large Resistive Switching and Artificial Synaptic Behaviors in Layered Cs<sub>3</sub>Sb<sub>2</sub>I<sub>9</sub> Lead‐Free Perovskite Memory Devices.