Works matching IS 2199160X AND DT 2022 AND VI 8 AND IP 1
Results: 39
Masthead: (Adv. Electron. Mater. 1/2022).
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202270003
- Publication type:
- Article
Non‐Volatile Photo‐Switch Using a Diamond pn Junction (Adv. Electron. Mater. 1/2022).
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202270004
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- Article
Monolithic Multi‐Color Tunable Inorganic Light‐Emitting Diodes (Adv. Electron. Mater. 1/2022).
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- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202270002
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- Article
Device Geometry Insights for Efficient Electrically Driven Insulator‐to‐Metal Transition in Vanadium Dioxide Thin‐Films (Adv. Electron. Mater. 1/2022).
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- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202270001
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- Article
Organic Synaptic Transistors for Bio‐Hybrid Neuromorphic Electronics.
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- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100935
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- Article
Unconventional Resistive Switching Behavior in Fibroin‐Based Memristor.
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- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100843
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- Article
Boosting Room Temperature Tunnel Magnetoresistance in Hybrid Magnetic Tunnel Junctions Under Electric Bias.
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- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100805
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- Article
Liquid Crystalline Rylenediimides with Highly Order Smectic Layer Structure as a Floating Gate for Multiband Photoresponding Photonic Transistor Memory.
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- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100798
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- Article
Crystal Phase Control during Epitaxial Hybridization of III‐V Semiconductors with Silicon.
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- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100777
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- Article
The van der Waals Epitaxy of High‐Quality N‐Polar Gallium Nitride for High‐Response Ultraviolet Photodetectors with Polarization Electric Field Modulation.
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- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100759
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- Article
Large‐Area Endohedral Metallofullerene Single‐Crystal Arrays for High‐Performance Field‐Effect Transistors and Photodetectors.
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- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100753
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- Article
Amorphous‐Ga<sub>2</sub>O<sub>3</sub> Optoelectronic Synapses with Ultra‐low Energy Consumption.
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- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100741
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- Publication type:
- Article
Ligand Exchange and Impurity Doping in 2D CdSe Nanoplatelet Thin Films and Their Applications.
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- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100739
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- Article
Selectively Defect‐Healed Graphene Electrodes for Tungsten Diselenide Thin‐Film Transistors.
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- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100729
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- Article
Light‐Rewritable Logic Devices Based on Van der Waals Heterostructures.
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- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100708
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- Article
Room Temperature Insulator‐to‐Metal Transition of VO<sub>2</sub>/TiO<sub>2</sub> Epitaxial Bilayer Films Grown on M‐plane Sapphire Substrates.
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- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100687
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- Article
Giant Enhancement of Spin‐Orbit Torque Efficiency in Pt/Co Bilayers by Inserting a WSe<sub>2</sub> under Layer.
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- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100684
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- Article
Fourfold Polarization‐Sensitive Photodetector Based on GaTe/MoS<sub>2</sub> van der Waals Heterojunction.
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- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100673
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- Article
π–π Interactions Mediated Pyrene Based Ligand Enhanced Photoresponse in Hybrid Graphene/PbS Quantum Dots Photodetectors.
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- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100672
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- Article
High Hole Mobility Inorganic Halide Perovskite Field‐Effect Transistors with Enhanced Phase Stability and Interfacial Defect Tolerance.
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- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100624
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- Article
Repairable Polymer Solid Electrolyte Gated MoS<sub>2</sub> Field Effect Devices with Large Radiation Tolerance.
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- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100619
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- Publication type:
- Article
Significant Modulation of Ferroelectric Photovoltaic Behavior by a Giant Macroscopic Flexoelectric Effect Induced by Strain‐Relaxed Epitaxy.
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- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100612
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- Article
A Perspective on Collective Properties of Atoms on 2D Materials.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100607
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- Publication type:
- Article
Monolithic Multi‐Color Tunable Inorganic Light‐Emitting Diodes.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100598
- By:
- Publication type:
- Article
Sacrificial 3D Printing of Highly Porous, Soft Pressure Sensors.
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- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100597
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- Publication type:
- Article
Graphene Superconductivity at Room‐Temperature of a Wide Range and Standard Atmosphere, Based on Vacuum Channels and White‐Light Interferometry.
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- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100595
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- Article
Porous MOFs–Zinc Cobaltite/Carbon Composite Nanofibers for High Lithium Storage.
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- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100592
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- Publication type:
- Article
Spin‐Orbit Torque and Interfacial Dzyaloshinskii–Moriya Interaction in Heavy Metal/Ferrimagnetic Insulator Deposited by Magnetron Sputtering.
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- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100590
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- Article
Mapping the Progress in Flexible Electrodes for Wearable Electronic Textiles: Materials, Durability, and Applications.
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- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100578
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- Article
Room‐Temperature Multiferroicity and Magnetization Dynamics in Fe/BTO/LSMO Tunnel Junction.
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- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100574
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- Publication type:
- Article
Investigation of Interplay between Polyvinylpyrrolidone Interlayer and Perovskite Composition Affecting the Performance of Perovskite Light Emitting Diode.
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- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100568
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- Publication type:
- Article
Harnessing Phase Transitions in Antiferroelectric ZrO<sub>2</sub> Using the Size Effect.
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- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100556
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- Publication type:
- Article
Graphene and MXene Based Free‐Standing Carbon Memristors for Flexible 2D Memory Applications.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100549
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- Publication type:
- Article
Non‐Volatile Photo‐Switch Using a Diamond pn Junction.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100542
- By:
- Publication type:
- Article
Breaking Space Inversion‐Symmetry to Obtain Asymmetric Spin‐Wave Excitation in Systems with Nonuniform Magnetic Exchange.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100435
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- Publication type:
- Article
Device Geometry Insights for Efficient Electrically Driven Insulator‐to‐Metal Transition in Vanadium Dioxide Thin‐Films.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100428
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- Publication type:
- Article
Positive Effect of Parasitic Monoclinic Phase of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> on Ferroelectric Endurance.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100420
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- Publication type:
- Article
Structural Odd–Even Effect Impacting the Dimensionality of Transport in BTBT‐CnOH Organic Field Effect Transistors.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100265
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- Publication type:
- Article
Large Resistive Switching and Artificial Synaptic Behaviors in Layered Cs<sub>3</sub>Sb<sub>2</sub>I<sub>9</sub> Lead‐Free Perovskite Memory Devices.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100237
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- Publication type:
- Article