Works matching IS 2199160X AND DT 2021 AND VI 7 AND IP 7
Results: 36
Core‐shell Single‐nanowire: Core–Shell Single‐Nanowire Photodetector with Radial Carrier Transport: an Opportunity to Break the Responsivity‐Speed Trade‐off (Adv. Electron. Mater. 7/2021).
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- Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202170027
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- Article
Asymmetric Self‐driven Photodetector: 2D WS<sub>2</sub> Based Asymmetric Schottky Photodetector with High Performance (Adv. Electron. Mater. 7/2021).
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- Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202170026
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Graphene Diodes: Graphene in 2D/3D Heterostructure Diodes for High Performance Electronics and Optoelectronics (Adv. Electron. Mater. 7/2021).
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- Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202170025
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Masthead: (Adv. Electron. Mater. 7/2021).
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- Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202170024
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- Article
Optoelectronic RAM: Multifunctional Optoelectronic Random Access Memory Device Based on Surface‐Plasma‐Treated Inorganic Halide Perovskite (Adv. Electron. Mater. 7/2021).
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- Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202170023
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Visible Light Communications: Co‐Evaporated Perovskite Light‐Emitting Transistor Operating at Room Temperature (Adv. Electron. Mater. 7/2021).
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- Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202170022
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Frontiers in Electronic and Optoelectronic Devices Based on 2D Materials.
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- Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202100444
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Co‐Evaporated Perovskite Light‐Emitting Transistor Operating at Room Temperature.
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- Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202100403
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- Article
Simultaneous Enhancement of Actuation Strain and Mechanical Strength of Nanoporous Ni–Mn Actuators.
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- Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202100381
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- Article
Multifunctional Optoelectronic Random Access Memory Device Based on Surface‐Plasma‐Treated Inorganic Halide Perovskite.
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- Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202100366
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- Article
Magnetic‐Sensitive Crack Sensor with Ultrahigh Sensitivity at Room Temperature by Depositing Graphene Nanosheets upon a Flexible Magnetic Film.
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- Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202100335
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- Article
1/f Noise Characterization of Bilayer MoS<sub>2</sub> Field‐Effect Transistors on Paper with Inkjet‐Printed Contacts and hBN Dielectrics.
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- Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202100283
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- Article
A Wearable Sustainable Moisture‐Induced Electricity Generator Based on rGO/GO/rGO Sandwich‐Like Structural Film.
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- Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202100222
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- Article
Highly Sensitive Capacitive Pressure Sensor Based on a Micropyramid Array for Health and Motion Monitoring.
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- Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202100174
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Simultaneously Improved Thermoelectric and Mechanical Properties Driven by MgB<sub>2</sub> Doping in Bi<sub>0.4</sub>Sb<sub>1.6</sub>Te<sub>3</sub> Based Alloys.
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- Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202100173
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Processable Thiophene‐Based Polymers with Tailored Electronic Properties and their Application in Solid‐State Electrochromic Devices Using Nanoparticle Films.
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- Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202100166
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- Article
Inkjet Printed Circuits with 2D Semiconductor Inks for High‐Performance Electronics.
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- Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202100112
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- Article
Highly Sensitive and Selective Gas Sensor Using Heteroatom Doping Graphdiyne: A DFT Study.
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- Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202001244
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- Article
Graphene in 2D/3D Heterostructure Diodes for High Performance Electronics and Optoelectronics.
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- Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202001210
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Direct Visualization and Effects of Atomic‐Scale Defects on the Optoelectronic Properties of Hexagonal Boron Nitride.
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- Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202001177
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- Article
Recent Advances in Two‐Dimensional Heterostructures: From Band Alignment Engineering to Advanced Optoelectronic Applications.
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- Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202001174
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- Article
Quantum Transport in Monolayer α‐CS Field‐Effect Transistors.
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- Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202001169
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- Article
Nondegenerate P‐Type In‐Doped SnS<sub>2</sub> Monolayer Transistor.
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- Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202001168
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- Article
Thickness and Spin Dependence of Raman Modes in Magnetic Layered Fe<sub>3</sub>GeTe<sub>2</sub>.
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- Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202001159
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Recent Advances in 2D Materials for Photodetectors.
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- Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202001125
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- Article
Volatile Organic Compound Sensors Based on 2D Materials.
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- Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202001071
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Van Der Waals Heterostructures Based on Atomically‐Thin Superconductors.
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- Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202000987
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Progress and Perspective: MXene and MXene‐Based Nanomaterials for High‐Performance Energy Storage Devices.
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- Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202000967
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- Article
High‐Performance Ultrapure Green CdSe/CdS Core/Crown Nanoplatelet Light‐Emitting Diodes by Suppressing Nonradiative Energy Transfer.
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- Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202000965
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- Article
2D WS<sub>2</sub> Based Asymmetric Schottky Photodetector with High Performance.
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- Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202000964
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- Article
An Atomically Thin Air‐Stable Narrow‐Gap Semiconductor Cr<sub>2</sub>S<sub>3</sub> for Broadband Photodetection with High Responsivity.
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- Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202000962
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- Article
Gold Nanocluster‐Modified Titanium Nitride for Ultrafast Photonics Applications.
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- Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202000954
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- Article
Core–Shell Single‐Nanowire Photodetector with Radial Carrier Transport: an Opportunity to Break the Responsivity‐Speed Trade‐off.
- Published in:
- Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202000920
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- Publication type:
- Article
2D WS<sub>2</sub>: From Vapor Phase Synthesis to Device Applications.
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- Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202000688
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Highly Selective Non‐Covalent On‐Chip Functionalization of Layered Materials.
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- Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202000564
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- Article
Gate Stack Engineering in MoS<sub>2</sub> Field‐Effect Transistor for Reduced Channel Doping and Hysteresis Effect.
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- Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202000395
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- Article