Works matching IS 2199160X AND DT 2021 AND VI 7 AND IP 6

Results: 26

Ferroelectric‐nanocrack Device: Ferroelectric‐Nanocrack Switches for Memory and Complementary Logic with Zero Off‐current and Low Operating Voltage (Adv. Electron. Mater. 6/2021).

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202170021

By:

Guo, Zhe;
Guan, Yaodong;
Luo, Qiang;
Hong, Jeongmin;
You, Long

Publication type:

Article

Optical Outcoupling Efficiency in Polymer Light‐Emitting Diodes.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202100155

By:

Li, Yungui;
Van der Zee, Bas;
Wetzelaer, Gert‐Jan A. H.;
Blom, Paul W. M.

Publication type:

Article

Masthead: (Adv. Electron. Mater. 6/2021).

Published in:: Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202170019
Publication type:: Article

Operation Principles of ZnO/Al2O3‐AlDMP/ZnO Stacked‐Channel Ternary Thin‐Film Transistor.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202100247

By:

Kim, So‐Young;
Kim, Kiyung;
Kim, A. Reum;
Lee, Ho‐In;
Lee, Yongsu;
Kim, Seung‐Mo;
Yu, Sung Ho;
Lee, Hae‐Won;
Hwang, Hyeon Jun;
Sung, Myung Mo;
Lee, Byoung Hun

Publication type:

Article

Parameterization of Metallic Grids on Transparent Conductive Electrodes for the Scaling of Organic Solar Cells.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202100192

By:

Burwell, Gregory;
Burridge, Nicholas;
Bond, Eloise;
Li, Wei;
Meredith, Paul;
Armin, Ardalan

Publication type:

Article

Neural Networks: Low‐Power Self‐Rectifying Memristive Artificial Neural Network for Near Internet‐of‐Things Sensor Computing (Adv. Electron. Mater. 6/2021).

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202170017

By:

Choi, Seok;
Kim, Yong;
Van Nguyen, Tien;
Jeong, Won Hee;
Min, Kyeong‐Sik;
Choi, Byung Joon

Publication type:

Article

Hexagonal Boron Nitride: Mitigation of Electromigration in Metal Interconnects via Hexagonal Boron Nitride as an Ångström‐Thin Passivation Layer (Adv. Electron. Mater. 6/2021).

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202170020

By:

Jeong, Yunjo;
Douglas, Ossie;
Misra, Utkarsh;
Tanjil, Md Rubayat‐E;
Watanabe, Kenji;
Taniguchi, Takashi;
Wang, Michael Cai

Publication type:

Article

High‐Performance Planar Heterojunction Perovskite Solar Cells Based on BaCl2 Additive and Power Conversion Efficiency of Over 21%.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202100165

By:

Zong, Beibei;
Zhang, Zizhao;
Shun, Qing;
Kang, Bonan;
Silva, S. Ravi P.;
Lu, Ge yu

Publication type:

Article

Polarization Stability: Robust Polarization Stability in a Self‐Assembled Ultrathin Organic Ferroelectric Nano Lamellae (Adv. Electron. Mater. 6/2021).

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202170018

By:

Viswanath, Pamarti;
De Silva, K. Kanishka H.;
Morikuni, Yuki;
Yoshimura, Masamichi

Publication type:

Article

Dual‐Gate Organic Electrochemical Transistors for Marine Sensing.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202100223

By:

Wu, Shuo‐En;
Yao, Lulu;
Shiller, Alan;
Barnard, Andrew H.;
Azoulay, Jason David;
Ng, Tse Nga

Publication type:

Article

High‐Performance Voice Recognition Based on Piezoelectric Polyacrylonitrile Nanofibers.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202100206

By:

Shao, Hao;
Wang, Hongxia;
Cao, Yuying;
Ding, Xiang;
Fang, Jian;
Wang, Wenyu;
Jin, Xin;
Peng, Lu;
Zhang, Daquan;
Lin, Tong

Publication type:

Article

Humidity‐Induced Nanoscale Restructuring in PEDOT:PSS and Cellulose Nanofibrils Reinforced Biobased Organic Electronics.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202100137

By:

Brett, Calvin J.;
Forslund, Ola K.;
Nocerino, Elisabetta;
Kreuzer, Lucas P.;
Widmann, Tobias;
Porcar, Lionel;
Yamada, Norifumi L.;
Matsubara, Nami;
Månsson, Martin;
Müller‐Buschbaum, Peter;
Söderberg, L. Daniel;
Roth, Stephan V.

Publication type:

Article

Charge Traps in All‐Inorganic CsPbBr3 Perovskite Nanowire Field‐Effect Phototransistors.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202100105

By:

Winterer, Felix;
Walter, Lisa Sophie;
Lenz, Jakob;
Seebauer, Stefan;
Tong, Yu;
Polavarapu, Lakshminarayana;
Weitz, Ralf Thomas

Publication type:

Article

A Fully Integrated Ferroelectric Thin‐Film‐Transistor – Influence of Device Scaling on Threshold Voltage Compensation in Displays.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202100082

By:

Lehninger, David;
Ellinger, Martin;
Ali, Tarek;
Li, Songrui;
Mertens, Konstantin;
Lederer, Maximilian;
Olivio, Ricardo;
Kämpfe, Thomas;
Hanisch, Norbert;
Biedermann, Kati;
Rudolph, Matthias;
Brackmann, Varvara;
Sanctis, Shawn;
Jank, Michael P. M.;
Seidel, Konrad

Publication type:

Article

Switchable Optically Active Schottky Barrier in La0.7Sr0.3MnO3/BaTiO3/ITO Ferroelectric Tunnel Junction.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202100069

By:

Rivera‐Calzada, Alberto;
Gallego, Fernando;
Kalcheim, Yoav;
Salev, Pavel;
del Valle, Javier;
Tenreiro, Isabel;
León, Carlos;
Santamaría, Jacobo;
Schuller, Ivan K.

Publication type:

Article

Low‐Power Self‐Rectifying Memristive Artificial Neural Network for Near Internet‐of‐Things Sensor Computing.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202100050

By:

Choi, Seok;
Kim, Yong;
Van Nguyen, Tien;
Jeong, Won Hee;
Min, Kyeong‐Sik;
Choi, Byung Joon

Publication type:

Article

Tungsten‐Disulfide/Polyaniline High Frequency Supercapacitors.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202100025

By:

De Adhikari, Amrita;
Shauloff, Nitzan;
Turkulets, Yury;
Shalish, Ilan;
Jelinek, Raz

Publication type:

Article

Ferroelectric‐Nanocrack Switches for Memory and Complementary Logic with Zero Off‐current and Low Operating Voltage.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202100023

By:

Guo, Zhe;
Guan, Yaodong;
Luo, Qiang;
Hong, Jeongmin;
You, Long

Publication type:

Article

PEDOT:Tosylate‐Polyamine‐Based Organic Electrochemical Transistors for High‐Performance Bioelectronics.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202100059

By:

Fenoy, Gonzalo E.;
Bilderling, Catalina;
Knoll, Wolfgang;
Azzaroni, Omar;
Marmisollé, Waldemar A.

Publication type:

Article

Gate‐Controlled Rectifying Direction in PdSe2 Lateral Heterojunction Diode.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202100005

By:

Seo, Dongwook;
Seo, Jae Eun;
Das, Tanmoy;
Kwak, Joon Young;
Chang, Jiwon

Publication type:

Article

Mitigation of Electromigration in Metal Interconnects via Hexagonal Boron Nitride as an Ångström‐Thin Passivation Layer.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202100002

By:

Jeong, Yunjo;
Douglas, Ossie;
Misra, Utkarsh;
Tanjil, Md Rubayat‐E;
Watanabe, Kenji;
Taniguchi, Takashi;
Wang, Michael Cai

Publication type:

Article

Phase Change Random Access Memory for Neuro‐Inspired Computing.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202001241

By:

Wang, Qiang;
Niu, Gang;
Ren, Wei;
Wang, Ruobing;
Chen, Xiaogang;
Li, Xi;
Ye, Zuo‐Guang;
Xie, Ya‐Hong;
Song, Sannian;
Song, Zhitang

Publication type:

Article

Current Rectification, Resistive Switching, and Stable NDR Effect in BaTiO3/CeO2 Heterostructure Devices.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202001237

By:

Rehman, Shania;
Kim, Honggyun;
Patil, Harshada;
Kadam, Kalyani D.;
Sagar, Rizwan Ur Rehman;
Aziz, Jamal;
Um, Doo‐Seung;
Khan, Muhammad Farooq;
Kim, Deok‐kee

Publication type:

Article

Rapid Growth of Monolayer MoSe2 Films for Large‐Area Electronics.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202001219

By:

Zhang, Danzhen;
Wen, Chengyu;
Mcclimon, John Brandon;
Masih Das, Paul;
Zhang, Qicheng;
Leone, Grace A.;
Mandyam, Srinivas V.;
Drndić, Marija;
Johnson, Alan T. Charlie;
Zhao, Meng‐Qiang

Publication type:

Article

Robust Polarization Stability in a Self‐Assembled Ultrathin Organic Ferroelectric Nano Lamellae.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202001085

By:

Viswanath, Pamarti;
De Silva, K. Kanishka H.;
Morikuni, Yuki;
Yoshimura, Masamichi

Publication type:

Article

Large Tunnel Electroresistance with Ultrathin Hf0.5Zr0.5O2 Ferroelectric Tunnel Barriers.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202001074

By:

Prasad, Bhagwati;
Thakare, Vishal;
Kalitsov, Alan;
Zhang, Zimeng;
Terris, Bruce;
Ramesh, Ramamoorthy

Publication type:

Article

Works matching IS 2199160X AND DT 2021 AND VI 7 AND IP 6

Ferroelectric‐nanocrack Device: Ferroelectric‐Nanocrack Switches for Memory and Complementary Logic with Zero Off‐current and Low Operating Voltage (Adv. Electron. Mater. 6/2021).

Optical Outcoupling Efficiency in Polymer Light‐Emitting Diodes.

Masthead: (Adv. Electron. Mater. 6/2021).

Operation Principles of ZnO/Al<sub>2</sub>O<sub>3</sub>‐AlDMP/ZnO Stacked‐Channel Ternary Thin‐Film Transistor.

Parameterization of Metallic Grids on Transparent Conductive Electrodes for the Scaling of Organic Solar Cells.

Neural Networks: Low‐Power Self‐Rectifying Memristive Artificial Neural Network for Near Internet‐of‐Things Sensor Computing (Adv. Electron. Mater. 6/2021).

Hexagonal Boron Nitride: Mitigation of Electromigration in Metal Interconnects via Hexagonal Boron Nitride as an Ångström‐Thin Passivation Layer (Adv. Electron. Mater. 6/2021).

High‐Performance Planar Heterojunction Perovskite Solar Cells Based on BaCl<sub>2</sub> Additive and Power Conversion Efficiency of Over 21%.

Polarization Stability: Robust Polarization Stability in a Self‐Assembled Ultrathin Organic Ferroelectric Nano Lamellae (Adv. Electron. Mater. 6/2021).

Dual‐Gate Organic Electrochemical Transistors for Marine Sensing.

High‐Performance Voice Recognition Based on Piezoelectric Polyacrylonitrile Nanofibers.

Humidity‐Induced Nanoscale Restructuring in PEDOT:PSS and Cellulose Nanofibrils Reinforced Biobased Organic Electronics.

Charge Traps in All‐Inorganic CsPbBr<sub>3</sub> Perovskite Nanowire Field‐Effect Phototransistors.

A Fully Integrated Ferroelectric Thin‐Film‐Transistor – Influence of Device Scaling on Threshold Voltage Compensation in Displays.

Switchable Optically Active Schottky Barrier in La<sub>0.7</sub>Sr<sub>0.3</sub>MnO<sub>3</sub>/BaTiO<sub>3</sub>/ITO Ferroelectric Tunnel Junction.

Low‐Power Self‐Rectifying Memristive Artificial Neural Network for Near Internet‐of‐Things Sensor Computing.

Tungsten‐Disulfide/Polyaniline High Frequency Supercapacitors.

Ferroelectric‐Nanocrack Switches for Memory and Complementary Logic with Zero Off‐current and Low Operating Voltage.

PEDOT:Tosylate‐Polyamine‐Based Organic Electrochemical Transistors for High‐Performance Bioelectronics.

Gate‐Controlled Rectifying Direction in PdSe<sub>2</sub> Lateral Heterojunction Diode.

Mitigation of Electromigration in Metal Interconnects via Hexagonal Boron Nitride as an Ångström‐Thin Passivation Layer.

Phase Change Random Access Memory for Neuro‐Inspired Computing.

Current Rectification, Resistive Switching, and Stable NDR Effect in BaTiO<sub>3</sub>/CeO<sub>2</sub> Heterostructure Devices.

Rapid Growth of Monolayer MoSe<sub>2</sub> Films for Large‐Area Electronics.

Robust Polarization Stability in a Self‐Assembled Ultrathin Organic Ferroelectric Nano Lamellae.

Large Tunnel Electroresistance with Ultrathin Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Ferroelectric Tunnel Barriers.