Works matching IS 2199160X AND DT 2021 AND VI 7 AND IP 5
Results: 39
Resistive Switching Memory: Smart Design of Resistive Switching Memory by an In Situ Current‐Induced Oxidization Process on a Single Crystalline Metallic Nanowire (Adv. Electron. Mater. 5/2021).
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- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202170015
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Masthead: (Adv. Electron. Mater. 5/2021).
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- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202170014
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- Article
Data Storage: Functional Applications of Future Data Storage Devices (Adv. Electron. Mater. 5/2021).
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- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202170016
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Wireless Sensors: Wireless‐Powered VOCs Sensor Based on Energy‐Harvesting Metamaterial (Adv. Electron. Mater. 5/2021).
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- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202170013
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In Situ Encryption: Cryptographic Key Generation and In Situ Encryption in One‐Transistor‐One‐Resistor Memristors for Hardware Security (Adv. Electron. Mater. 5/2021).
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- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202170012
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Three Resistance States Achieved by Nanocrystalline Decomposition in Ge‐Ga‐Sb Compound for Multilevel Phase Change Memory.
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- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202100164
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Direct Measurement of Transient Charging and Dipole Alignment Speed in Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Gate Dielectric Using Graphene FETs.
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- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202100145
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Polarization‐Modulated Photovoltaic Effect at the Morphotropic Phase Boundary in Ferroelectric Ceramics.
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- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202100144
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All‐Solid‐State Oxygen Ion Electrochemical Random‐Access Memory for Neuromorphic Computing.
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- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202100142
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High‐Efficiency Microwave Attenuation of Magnetic Carbon Nanoparticle‐Decorated Tubular Carbon Nanofibers Composites at an Ultralow Filling Content.
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- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202100121
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A Single Transistor‐Based Threshold Switch for a Bio‐Inspired Reconfigurable Threshold Logic.
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- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202100117
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Polycrystalline Ge Nanosheets Embedded in Metal‐Semiconductor Heterostructures Enabling Wafer‐Scale 3D Integration of Ge Nanodevices with Self‐Aligned Al Contacts.
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- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202100101
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Flexible and Transparent Aluminum‐Nitride‐Based Surface‐Acoustic‐Wave Device on Polymeric Polyethylene Naphthalate.
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- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202100084
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2D MoS<sub>2</sub> Charge Injection Memory Transistors Utilizing Hetero‐Stack SiO<sub>2</sub>/HfO<sub>2</sub> Dielectrics and Oxide Interface Traps.
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- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202100074
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Spinterfaces Manipulate Large Magnetic Field Effects in 3D and Quasi‐2D Organic–Inorganic Hybrid Perovskites.
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- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202100026
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CsFAMAPbIBr Photoelectric Memristor Based on Ion‐Migration Induced Memristive Behavior.
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- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202100014
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Effectively Enhanced Broadband Phototransistors Based on Multilayer WSe<sub>2</sub>/Pentacene.
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- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202100003
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Boosting the Thermoelectric Properties of PEDOT:PSS via Low‐Impact Deposition of Tin Oxide Nanoparticles.
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- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202001284
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Non‐Local Electron‐Phonon Interaction in Naphthalene Diimide Derivatives, its Experimental Probe and Impact on Charge‐Carrier Mobility.
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- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202001281
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Memristors Based on (Zr, Hf, Nb, Ta, Mo, W) High‐Entropy Oxides.
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- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202001258
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Phase‐Transition‐Induced VO<sub>2</sub> Thin Film IR Photodetector and Threshold Switching Selector for Optical Neural Network Applications.
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- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202001254
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Wireless‐Powered VOCs Sensor Based on Energy‐Harvesting Metamaterial.
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- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202001240
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Using Light for Better Programming of Ferroelectric Devices: Optoelectronic MoS<sub>2</sub>‐Pb(Zr,Ti)O<sub>3</sub> Memories with Improved On–Off Ratios.
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- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202001223
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Compositional Engineering of Hf‐Doped InZnSnO Films for High‐Performance and Stability Amorphous Oxide Semiconductor Thin Film Transistors.
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- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202001216
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Fermi‐Level Pinning Free High‐Performance 2D CMOS Inverter Fabricated with Van Der Waals Bottom Contacts.
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- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202001212
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Flexible and Transparent Electrodes of Cu<sub>2−</sub><sub>X</sub>Se with Charge Transport via Direct Tunneling Effect.
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- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202001189
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Cryptographic Key Generation and In Situ Encryption in One‐Transistor‐One‐Resistor Memristors for Hardware Security.
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- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202001182
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Functional Applications of Future Data Storage Devices.
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- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202001181
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Metal‐Based Flexible Transparent Electrodes: Challenges and Recent Advances.
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- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202001121
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Green Fabrication of (6,5)Carbon Nanotube/Protein Transistor Endowed with Specific Recognition.
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- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202001114
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Gate‐Tunable Photodiodes Based on Mixed‐Dimensional Te/MoTe<sub>2</sub> Van der Waals Heterojunctions.
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- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202001066
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How to Reduce Charge Recombination in Organic Solar Cells: There are Still Lessons to Learn from P3HT:PCBM.
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- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202001056
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Investigation of the Determining Factors for the "Mobility Boost" in High‐k‐Gated Transparent Oxide Semiconductor Thin‐Film Transistors.
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- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202001037
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Boron Nitride Nanotube Coatings for Thermal Management of Printed Silver Inks on Temperature Sensitive Substrates.
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- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202001035
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A Poly‐Crystalline Silicon Nanowire Transistor with Independently Controlled Double‐Gate for Physically Unclonable Function by Multi‐States and Self‐Destruction.
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- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202000989
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MXene‐GaN van der Waals Heterostructures for High‐Speed Self‐Driven Photodetectors and Light‐Emitting Diodes.
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- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202000955
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Complementary Type Ferroelectric Memory Transistor Circuits with P‐ and N‐Channel MoTe2.
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- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202000906
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Fabrication of Oriented n‐Type Thermoelectric Polymers by Polarity Switching in a DPP‐Based Donor–Acceptor Copolymer Doped with FeCl<sub>3</sub>.
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- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202000880
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- Publication type:
- Article
Smart Design of Resistive Switching Memory by an In Situ Current‐Induced Oxidization Process on a Single Crystalline Metallic Nanowire.
- Published in:
- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202000252
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- Publication type:
- Article