Works matching IS 2199160X AND DT 2021 AND VI 7 AND IP 2

Results: 30

Multi‐Level Switching and Reversible Current Driven Domain‐Wall Motion in Single CoFeB/MgO/CoFeB‐Based Perpendicular Magnetic Tunnel Junctions.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 2, p. 1, doi. 10.1002/aelm.202000976

By:

Lv, Hua;
Fidalgo, Joao;
Silva, Ana V.;
Leitao, Diana C.;
Kampfe, Thomas;
Langer, Juergen;
Wrona, Jerzy;
Ocker, Berthold;
Freitas, Paulo P.;
Cardoso, Susana

Publication type:

Article

Near‐Unity Molecular Doping Efficiency in Monolayer MoS2.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 2, p. 1, doi. 10.1002/aelm.202000873

By:

Yarali, Milad;
Zhong, Yiren;
Reed, Serrae N.;
Wang, Juefan;
Ulman, Kanchan A.;
Charboneau, David J.;
Curley, Julia B.;
Hynek, David J.;
Pondick, Joshua V.;
Yazdani, Sajad;
Hazari, Nilay;
Quek, Su Ying;
Wang, Hailiang;
Cha, Judy J.

Publication type:

Article

A Current–Voltage Model for Double Schottky Barrier Devices.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 2, p. 1, doi. 10.1002/aelm.202000979

By:

Grillo, Alessandro;
Di Bartolomeo, Antonio

Publication type:

Article

Nitrogen‐Doping‐Regulated Electromagnetic Wave Absorption Properties of Ultralight Three‐Dimensional Porous Reduced Graphene Oxide Aerogels.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 2, p. 1, doi. 10.1002/aelm.202001001

By:

Shu, Ruiwen;
Zhang, Gengyuan;
Zhang, Chao;
Wu, Yue;
Zhang, Jiabin

Publication type:

Article

Masthead: (Adv. Electron. Mater. 2/2021).

Published in:: Advanced Electronic Materials, 2021, v. 7, n. 2, p. 1, doi. 10.1002/aelm.202170007
Publication type:: Article

Retraction: Combined Printing of Highly Aligned Single‐Walled Carbon Nanotube Thin Films with Liquid Metal for Direct Fabrication of Functional Electronic Devices.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 2, p. 1, doi. 10.1002/aelm.202001255

By:

Li, Qian;
Liu, Jing

Publication type:

Article

Flexible Electronics: Investigation of Nano‐Gaps in Fractured β‐Ga2O3 Nanomembranes Formed by Uniaxial Strain (Adv. Electron. Mater. 2/2021).

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 2, p. 1, doi. 10.1002/aelm.202170006

By:

Hasan, Md Nazmul;
Lai, Junyu;
Swinnich, Edward;
Zheng, Yixiong;
Baboukani, Behnoosh Sattari;
Nalam, Prathima C.;
Seo, Jung‐Hun

Publication type:

Article

Anomalous Current Decrease Under Illumination in Ambipolar Phototransistors Based on PTCDI‐C5 Crystals Embedded in C8‐BTBT Thin Film.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 2, p. 1, doi. 10.1002/aelm.202000973

By:

Tarsoly, Gergely;
Choi, Youngill;
You, Young Gyu;
Jhang, Sung Ho;
Pyo, Seungmoon

Publication type:

Article

Conductive Silver Grid Electrode for Flexible and Transparent Memristor Applications.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 2, p. 1, doi. 10.1002/aelm.202000948

By:

Han, Xu;
Xu, Ruixue;
Sun, Bowen;
Xu, Jing;
Hong, Wang;
Cai, Guofa;
Qian, Kai

Publication type:

Article

Improved Threshold Switching and Endurance Characteristics Using Controlled Atomic‐Scale Switching in a 0.5 nm Thick Stoichiometric HfO2 Layer.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 2, p. 1, doi. 10.1002/aelm.202000869

By:

Lee, Seungwoo;
Banerjee, Writam;
Lee, Sangmin;
Sung, Changhyuck;
Hwang, Hyunsang

Publication type:

Article

Toward Printed Molecular Electronics: Direct Printing of Liquid Metal Microelectrode on Self‐Assembled Monolayers.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 2, p. 1, doi. 10.1002/aelm.202000829

By:

Byeon, Seo Eun;
Kang, Hungu;
Yoon, Hyo Jae

Publication type:

Article

Enhanced Thermoelectric Performance of Ba8Ga16Ge30 Clathrate by Modulation Doping and Improved Carrier Mobility.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 2, p. 1, doi. 10.1002/aelm.202000782

By:

Zhang, Yifei;
Brorsson, Joakim;
Qiu, Ren;
Palmqvist, Anders E. C.

Publication type:

Article

Electrothermal Color Tuning of Cholesteric Liquid Crystals Using Interdigitated Electrode Patterns.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 2, p. 1, doi. 10.1002/aelm.202000958

By:

Froyen, Arne A. F.;
Wübbenhorst, Michael;
Liu, Danqing;
Schenning, Albert P. H. J.

Publication type:

Article

TiO2 Nanowire Array Memristive Devices Emulating Functionalities of Biological Synapses.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 2, p. 1, doi. 10.1002/aelm.202000950

By:

Ebenhoch, Carola;
Schmidt‐Mende, Lukas

Publication type:

Article

Thermally Stable and Highly Conductive SAMs on Ag Substrate—The Impact of the Anchoring Group.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 2, p. 1, doi. 10.1002/aelm.202000947

By:

Wróbel, Mateusz;
Żaba, Tomasz;
Sauter, Eric;
Krawiec, Mariusz;
Sobczuk, Joanna;
Terfort, Andreas;
Zharnikov, Michael;
Cyganik, Piotr

Publication type:

Article

Homogeneous 3D Vertical Integration of Parylene‐C Based Organic Flexible Resistive Memory on Standard CMOS Platform.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 2, p. 1, doi. 10.1002/aelm.202000864

By:

Chen, Qingyu;
Wang, Zongwei;
Lin, Min;
Qi, Xin;
Yu, Zhizhen;
Wu, Lindong;
Bao, Lin;
Ling, Yaotian;
Qin, Yabo;
Cai, Yimao;
Huang, Ru

Publication type:

Article

Molecular‐Scale Design of Cellulose‐Based Functional Materials for Flexible Electronic Devices.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 2, p. 1, doi. 10.1002/aelm.202000944

By:

Pang, Bo;
Jiang, Geyuan;
Zhou, Jianhong;
Zhu, Ying;
Cheng, Wanke;
Zhao, Dawei;
Wang, Kangjun;
Xu, Guangwen;
Yu, Haipeng

Publication type:

Article

Regulate the Electron Mobility and Threshold Voltage of P(NDI2OD‐T2)‐Based Organic Field‐Effect Transistors by the Compatibility Principle.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 2, p. 1, doi. 10.1002/aelm.202000939

By:

Yang, Hau‐Ren;
Lai, Yu‐Ying

Publication type:

Article

Ultralow Thermal Conductivity in Dual‐Doped n‐Type Bi2Te3 Material for Enhanced Thermoelectric Properties.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 2, p. 1, doi. 10.1002/aelm.202000910

By:

Musah, Jamal‐Deen;
Guo, Chen;
Novitskii, Andrei;
Serhiienko, Illia;
Adesina, Ayotunde Emmanuel;
Khovaylo, Vladimir;
Wu, Chi‐Man Lawrence;
Zapien, Juan Antonio;
Roy, Vellaisamy A. L.

Publication type:

Article

Graphene–Polyurethane Coatings for Deformable Conductors and Electromagnetic Interference Shielding.

Published in:: Advanced Electronic Materials, 2021, v. 7, n. 2, p. 1, doi. 10.1002/aelm.202000900
Publication type:: Article

Gate‐Controlled Field Emission Current from MoS2 Nanosheets.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 2, p. 1, doi. 10.1002/aelm.202000838

By:

Pelella, Aniello;
Grillo, Alessandro;
Urban, Francesca;
Giubileo, Filippo;
Passacantando, Maurizio;
Pollmann, Erik;
Sleziona, Stephan;
Schleberger, Marika;
Di Bartolomeo, Antonio

Publication type:

Article

Oxidative Chemical Vapor Deposition of Conducting Polymer Films on Nanostructured Surfaces for Piezoresistive Sensor Applications.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 2, p. 1, doi. 10.1002/aelm.202000871

By:

Muralter, Fabian;
Coclite, Anna Maria;
Lau, Kenneth K.S.

Publication type:

Article

Small Molecules with Controllable Molecular Weights Passivate Surface Defects in Air‐Stable p‐i‐n Perovskite Solar Cells.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 2, p. 1, doi. 10.1002/aelm.202000870

By:

Hsu, Hsiang‐Lin;
Jiang, Bing‐Huang;
Lan, Jie‐Min;
Wu, Chien‐Hsin;
Jeng, Ru‐Jong;
Chen, Chih‐Ping

Publication type:

Article

Partially Oxidized MXene Ti3C2Tx Sheets for Memristor having Synapse and Threshold Resistive Switching Characteristics.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 2, p. 1, doi. 10.1002/aelm.202000866

By:

Sokolov, Andrey;
Ali, Mumtaz;
Li, Hui;
Jeon, Yu‐Rim;
Ko, Min Jae;
Choi, Changhwan

Publication type:

Article

Investigation of Nano‐Gaps in Fractured β‐Ga2O3 Nanomembranes Formed by Uniaxial Strain.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 2, p. 1, doi. 10.1002/aelm.202000763

By:

Hasan, Md Nazmul;
Lai, Junyu;
Swinnich, Edward;
Zheng, Yixiong;
Baboukani, Behnoosh Sattari;
Nalam, Prathima C.;
Seo, Jung‐Hun

Publication type:

Article

Silver‐Nanowire‐Embedded Photopolymer Films for Transparent Film Heaters with Ultra‐Flexibility, Quick Thermal Response, and Mechanical Reliability.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 2, p. 1, doi. 10.1002/aelm.202000698

By:

Jin, In Su;
Choi, Jun;
Jung, Jae Woong

Publication type:

Article

Trap Reduction through O3 Post‐Deposition Treatment of Y2O3 Thin Films Grown by Atomic Layer Deposition on Ge Substrates.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 2, p. 1, doi. 10.1002/aelm.202000819

By:

Kim, Dong Gun;
Kwon, Dae Seon;
Lim, Junil;
Seo, Haengha;
Kim, Tae Kyun;
Lee, Woongkyu;
Hwang, Cheol Seong

Publication type:

Article

Deep Proton Insertion Assisted by Oxygen Vacancies for Long‐Term Memory in VO2 Synaptic Transistor.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 2, p. 1, doi. 10.1002/aelm.202000802

By:

Oh, Chadol;
Kim, Inseo;
Park, Jaeseoung;
Park, Yunkyu;
Choi, Minseok;
Son, Junwoo

Publication type:

Article

From Cyclopentasilane to Thin‐Film Transistors.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 2, p. 1, doi. 10.1002/aelm.202000422

By:

Gerwig, Maik;
Ali, Abid Shaukat;
Neubert, David;
Polster, Sebastian;
Böhme, Uwe;
Franze, Georg;
Rosenkranz, Marco;
Popov, Alexey;
Ponomarev, Ilia;
Jank, Michael P. M.;
Viehweger, Christine;
Brendler, Erica;
Frey, Lothar;
Kroll, Peter;
Kroke, Edwin

Publication type:

Article

Optimizing Annealing Process for Ferroelectric Y‐Doped HfO2 Thin Films by All‐Inorganic Aqueous Precursor Solution.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 2, p. 1, doi. 10.1002/aelm.202000585

By:

Wang, Jingjing;
Zhou, Dayu;
Dong, Wei;
Yao, Yifan;
Sun, Nana;
Ali, Faizan;
Hou, Xiaoduo;
Liu, Feng

Publication type:

Article

Works matching IS 2199160X AND DT 2021 AND VI 7 AND IP 2

Multi‐Level Switching and Reversible Current Driven Domain‐Wall Motion in Single CoFeB/MgO/CoFeB‐Based Perpendicular Magnetic Tunnel Junctions.

Near‐Unity Molecular Doping Efficiency in Monolayer MoS<sub>2</sub>.

A Current–Voltage Model for Double Schottky Barrier Devices.

Nitrogen‐Doping‐Regulated Electromagnetic Wave Absorption Properties of Ultralight Three‐Dimensional Porous Reduced Graphene Oxide Aerogels.

Masthead: (Adv. Electron. Mater. 2/2021).

Retraction: Combined Printing of Highly Aligned Single‐Walled Carbon Nanotube Thin Films with Liquid Metal for Direct Fabrication of Functional Electronic Devices.

Flexible Electronics: Investigation of Nano‐Gaps in Fractured β‐Ga<sub>2</sub>O<sub>3</sub> Nanomembranes Formed by Uniaxial Strain (Adv. Electron. Mater. 2/2021).

Anomalous Current Decrease Under Illumination in Ambipolar Phototransistors Based on PTCDI‐C<sub>5</sub> Crystals Embedded in C<sub>8</sub>‐BTBT Thin Film.

Conductive Silver Grid Electrode for Flexible and Transparent Memristor Applications.

Improved Threshold Switching and Endurance Characteristics Using Controlled Atomic‐Scale Switching in a 0.5 nm Thick Stoichiometric HfO<sub>2</sub> Layer.

Toward Printed Molecular Electronics: Direct Printing of Liquid Metal Microelectrode on Self‐Assembled Monolayers.

Enhanced Thermoelectric Performance of Ba<sub>8</sub>Ga<sub>16</sub>Ge<sub>30</sub> Clathrate by Modulation Doping and Improved Carrier Mobility.

Electrothermal Color Tuning of Cholesteric Liquid Crystals Using Interdigitated Electrode Patterns.

TiO<sub>2</sub> Nanowire Array Memristive Devices Emulating Functionalities of Biological Synapses.

Thermally Stable and Highly Conductive SAMs on Ag Substrate—The Impact of the Anchoring Group.

Homogeneous 3D Vertical Integration of Parylene‐C Based Organic Flexible Resistive Memory on Standard CMOS Platform.

Molecular‐Scale Design of Cellulose‐Based Functional Materials for Flexible Electronic Devices.

Regulate the Electron Mobility and Threshold Voltage of P(NDI2OD‐T2)‐Based Organic Field‐Effect Transistors by the Compatibility Principle.

Ultralow Thermal Conductivity in Dual‐Doped n‐Type Bi<sub>2</sub>Te<sub>3</sub> Material for Enhanced Thermoelectric Properties.

Graphene–Polyurethane Coatings for Deformable Conductors and Electromagnetic Interference Shielding.

Gate‐Controlled Field Emission Current from MoS<sub>2</sub> Nanosheets.

Oxidative Chemical Vapor Deposition of Conducting Polymer Films on Nanostructured Surfaces for Piezoresistive Sensor Applications.

Small Molecules with Controllable Molecular Weights Passivate Surface Defects in Air‐Stable p‐i‐n Perovskite Solar Cells.

Partially Oxidized MXene Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> Sheets for Memristor having Synapse and Threshold Resistive Switching Characteristics.

Investigation of Nano‐Gaps in Fractured β‐Ga<sub>2</sub>O<sub>3</sub> Nanomembranes Formed by Uniaxial Strain.

Silver‐Nanowire‐Embedded Photopolymer Films for Transparent Film Heaters with Ultra‐Flexibility, Quick Thermal Response, and Mechanical Reliability.

Trap Reduction through O<sub>3</sub> Post‐Deposition Treatment of Y<sub>2</sub>O<sub>3</sub> Thin Films Grown by Atomic Layer Deposition on Ge Substrates.

Deep Proton Insertion Assisted by Oxygen Vacancies for Long‐Term Memory in VO<sub>2</sub> Synaptic Transistor.

From Cyclopentasilane to Thin‐Film Transistors.

Optimizing Annealing Process for Ferroelectric Y‐Doped HfO<sub>2</sub> Thin Films by All‐Inorganic Aqueous Precursor Solution.