Works matching IS 2199160X AND DT 2020 AND VI 6 AND IP 9

Results: 24

Silent Synapse: Silent Synapse Activation by Plasma‐Induced Oxygen Vacancies in TiO2 Nanowire‐Based Memristor (Adv. Electron. Mater. 9/2020).

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000536

By:

Shan, Xuanyu;
Wang, Zhongqiang;
Lin, Ya;
Zeng, Tao;
Zhao, Xiaoning;
Xu, Haiyang;
Liu, Yichun

Publication type:

Article

Masthead: (Adv. Electron. Mater. 9/2020).

Published in:: Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202070038
Publication type:: Article

Self‐Healing Devices: Intrinsically Stretchable and Self‐Healing Electroconductive Composites Based on Supramolecular Organic Polymer Embedded with Copper Microparticles (Adv. Electron. Mater. 9/2020).

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202070037

By:

Yeasmin, Rubaya;
Duy, Le Thai;
Han, Seungik;
Seo, Hyungtak

Publication type:

Article

Silent Synapse: Silent Synapse Activation by Plasma‐Induced Oxygen Vacancies in TiO2 Nanowire‐Based Memristor (Adv. Electron. Mater. 9/2020)

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000536

By:

Shan, Xuanyu;
Wang, Zhongqiang;
Lin, Ya;
Zeng, Tao;
Zhao, Xiaoning;
Xu, Haiyang;
Liu, Yichun

Publication type:

Article

Memristors: In‐Memory Hamming Weight Calculation in a 1T1R Memristive Array (Adv. Electron. Mater. 9/2020).

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202070036

By:

Cheng, Long;
Li, Jiancong;
Zheng, Hao‐Xuan;
Yuan, Peng;
Yin, Jiahao;
Yang, Ling;
Luo, Qing;
Li, Yi;
Lv, Hangbing;
Chang, Ting‐Chang;
Miao, Xiangshui

Publication type:

Article

Multifunctional Protein Nanowire Humidity Sensors for Green Wearable Electronics.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000721

By:

Liu, Xiaomeng;
Fu, Tianda;
Ward, Joy;
Gao, Hongyan;
Yin, Bing;
Woodard, Trevor;
Lovley, Derek R.;
Yao, Jun

Publication type:

Article

Controllable p‐to‐n Type Conductance Transition in Top‐Gated Graphene Field Effect Transistor by Interface Trap Engineering.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000496

By:

Peng, Songang;
Jin, Zhi;
Yao, Yao;
Huang, Xinnan;
Zhang, Dayong;
Niu, Jiebin;
Shi, Jingyuan;
Zhang, Yanhui;
Yu, Guanghui

Publication type:

Article

Combined Printing of Highly Aligned Single‐Walled Carbon Nanotube Thin Films with Liquid Metal for Direct Fabrication of Functional Electronic Devices.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000537

By:

Li, Qian;
Liu, Jing

Publication type:

Article

Silent Synapse Activation by Plasma‐Induced Oxygen Vacancies in TiO2 Nanowire‐Based Memristor.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000536

By:

Shan, Xuanyu;
Wang, Zhongqiang;
Lin, Ya;
Zeng, Tao;
Zhao, Xiaoning;
Xu, Haiyang;
Liu, Yichun

Publication type:

Article

Intrinsically Stretchable and Self‐Healing Electroconductive Composites Based on Supramolecular Organic Polymer Embedded with Copper Microparticles.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000527

By:

Yeasmin, Rubaya;
Duy, Le Thai;
Han, Seungik;
Seo, Hyungtak

Publication type:

Article

Wafer‐Scale Organic Complementary Inverters Fabricated with Self‐Assembled Monolayer Field‐Effect Transistors.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000515

By:

Zhao, Baolin;
Gothe, Bastian;
Sarcletti, Marco;
Zhao, Yuhan;
Rejek, Tobias;
Liu, Xin;
Park, Hyoungwon;
Strohriegl, Peter;
Halik, Marcus

Publication type:

Article

Maskless Formation of Conductive Carbon Layer on Leather for Highly Sensitive Flexible Strain Sensors.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000549

By:

Wang, Ziyang;
Chen, Bo;
Sun, Shibin;
Pan, Likun;
Gao, Yang

Publication type:

Article

A Structurally Simple but High‐Performing Donor–Acceptor Polymer for Field‐Effect Transistor Applications.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000490

By:

Aniés, Filip;
Wang, Simeng;
Hodsden, Thomas;
Panidi, Julianna;
Fei, Zhuping;
Jiao, Xuechen;
Wong, Yi Hang Cherie;
McNeill, Christopher R.;
Anthopoulos, Thomas D.;
Heeney, Martin

Publication type:

Article

Understanding of Selector‐Less 1S1R Type Cu‐Based CBRAM Devices by Controlling Sub‐Quantum Filament.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000488

By:

Banerjee, Writam;
Hwang, Hyunsang

Publication type:

Article

Complementary Type Ferroelectric Memory Transistor Circuits with P‐ and N‐Channel MoTe2.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000479

By:

Hong, Sungjae;
Kim, Kang Lib;
Cho, Yongjae;
Cho, Hyunmin;
Park, Ji Hoon;
Park, Cheolmin;
Im, Seongil

Publication type:

Article

In‐Memory Hamming Weight Calculation in a 1T1R Memristive Array.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000457

By:

Cheng, Long;
Li, Jiancong;
Zheng, Hao‐Xuan;
Yuan, Peng;
Yin, Jiahao;
Yang, Ling;
Luo, Qing;
Li, Yi;
Lv, Hangbing;
Chang, Ting‐Chang;
Miao, Xiangshui

Publication type:

Article

Patterning 2D Organic Crystalline Semiconductors via Thermally Induced Self‐Assembly.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000438

By:

Duan, Yiwei;
Qian, Jun;
Guo, Jianhang;
Jiang, Sai;
Yang, Chengdong;
Wang, Hengyuan;
Wang, Qijing;
Shi, Yi;
Li, Yun

Publication type:

Article

Highly Linear and Symmetric Weight Modification in HfO2‐Based Memristive Devices for High‐Precision Weight Entries.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000434

By:

Ryu, Jin Joo;
Jeon, Kanghyeok;
Kim, Guhyun;
Yang, Min Kyu;
Kim, Chunjoong;
Jeong, Doo Seok;
Kim, Gun Hwan

Publication type:

Article

Graphene–Polyurethane Coatings for Deformable Conductors and Electromagnetic Interference Shielding.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000429

By:

Cataldi, Pietro;
Papageorgiou, Dimitrios G.;
Pinter, Gergo;
Kretinin, Andrey V.;
Sampson, William W.;
Young, Robert J.;
Bissett, Mark;
Kinloch, Ian A.

Publication type:

Article

Nonvolatile Memory and Artificial Synaptic Characteristics in Thin‐Film Transistors with Atomic Layer Deposited HfOx Gate Insulator and ZnO Channel Layer.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000412

By:

Lee, Hyerin;
Beom, Keonwon;
Kim, Minju;
Kang, Chi Jung;
Yoon, Tae‐Sik

Publication type:

Article

Controlling Defect Formation of Nanoscale AlN: Toward Efficient Current Conduction of Ultrawide‐Bandgap Semiconductors.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000337

By:

Wu, Yuanpeng;
Laleyan, David A.;
Deng, Zihao;
Ahn, Chihyo;
Aiello, Anthony F.;
Pandey, Ayush;
Liu, Xianhe;
Wang, Ping;
Sun, Kai;
Ahmadi, Elaheh;
Sun, Yi;
Kira, Mackillo;
Bhattacharya, Pallab K.;
Kioupakis, Emmanouil;
Mi, Zetian

Publication type:

Article

Giant Field‐Induced Strain with Low Hysteresis and Boosted Energy Storage Performance under Low Electric Field in (Bi0.5Na0.5)TiO3‐Based Grain Orientation‐Controlled Ceramics.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000332

By:

Bai, Wangfeng;
Zhao, Xinyu;
Ding, Yuqin;
Wang, Leijie;
Zheng, Peng;
Hao, Jigong;
Zhai, Jiwei

Publication type:

Article

A Novel Mitigation Mechanism for Photo‐Induced Trapping in an Anthradithiophene Derivative Using Additives.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000250

By:

Nasrallah, Iyad;
Ravva, Mahesh Kumar;
Broch, Katharina;
Novak, Jiri;
Armitage, John;
Schweicher, Guillaume;
Sadhanala, Aditya;
Anthony, John E.;
Bredas, Jean‐Luc;
Sirringhaus, Henning

Publication type:

Article

Low‐Dimensional Hybrid Perovskites for Field‐Effect Transistors with Improved Stability: Progress and Challenges.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000137

By:

Liang, Yuhang;
Li, Feng;
Zheng, Rongkun

Publication type:

Article

Works matching IS 2199160X AND DT 2020 AND VI 6 AND IP 9

Silent Synapse: Silent Synapse Activation by Plasma‐Induced Oxygen Vacancies in TiO<sub>2</sub> Nanowire‐Based Memristor (Adv. Electron. Mater. 9/2020).

Masthead: (Adv. Electron. Mater. 9/2020).

Self‐Healing Devices: Intrinsically Stretchable and Self‐Healing Electroconductive Composites Based on Supramolecular Organic Polymer Embedded with Copper Microparticles (Adv. Electron. Mater. 9/2020).

Silent Synapse: Silent Synapse Activation by Plasma‐Induced Oxygen Vacancies in TiO<sub>2</sub> Nanowire‐Based Memristor (Adv. Electron. Mater. 9/2020)

Memristors: In‐Memory Hamming Weight Calculation in a 1T1R Memristive Array (Adv. Electron. Mater. 9/2020).

Multifunctional Protein Nanowire Humidity Sensors for Green Wearable Electronics.

Controllable p‐to‐n Type Conductance Transition in Top‐Gated Graphene Field Effect Transistor by Interface Trap Engineering.

Combined Printing of Highly Aligned Single‐Walled Carbon Nanotube Thin Films with Liquid Metal for Direct Fabrication of Functional Electronic Devices.

Silent Synapse Activation by Plasma‐Induced Oxygen Vacancies in TiO<sub>2</sub> Nanowire‐Based Memristor.

Intrinsically Stretchable and Self‐Healing Electroconductive Composites Based on Supramolecular Organic Polymer Embedded with Copper Microparticles.

Wafer‐Scale Organic Complementary Inverters Fabricated with Self‐Assembled Monolayer Field‐Effect Transistors.

Maskless Formation of Conductive Carbon Layer on Leather for Highly Sensitive Flexible Strain Sensors.

A Structurally Simple but High‐Performing Donor–Acceptor Polymer for Field‐Effect Transistor Applications.

Understanding of Selector‐Less 1S1R Type Cu‐Based CBRAM Devices by Controlling Sub‐Quantum Filament.

Complementary Type Ferroelectric Memory Transistor Circuits with P‐ and N‐Channel MoTe<sub>2</sub>.

In‐Memory Hamming Weight Calculation in a 1T1R Memristive Array.

Patterning 2D Organic Crystalline Semiconductors via Thermally Induced Self‐Assembly.

Highly Linear and Symmetric Weight Modification in HfO<sub>2</sub>‐Based Memristive Devices for High‐Precision Weight Entries.

Graphene–Polyurethane Coatings for Deformable Conductors and Electromagnetic Interference Shielding.

Nonvolatile Memory and Artificial Synaptic Characteristics in Thin‐Film Transistors with Atomic Layer Deposited HfOx Gate Insulator and ZnO Channel Layer.

Controlling Defect Formation of Nanoscale AlN: Toward Efficient Current Conduction of Ultrawide‐Bandgap Semiconductors.

Giant Field‐Induced Strain with Low Hysteresis and Boosted Energy Storage Performance under Low Electric Field in (Bi<sub>0.5</sub>Na<sub>0.5</sub>)TiO<sub>3</sub>‐Based Grain Orientation‐Controlled Ceramics.

A Novel Mitigation Mechanism for Photo‐Induced Trapping in an Anthradithiophene Derivative Using Additives.

Low‐Dimensional Hybrid Perovskites for Field‐Effect Transistors with Improved Stability: Progress and Challenges.