Works matching IS 2199160X AND DT 2020 AND VI 6 AND IP 9

Results: 24

Silent Synapse: Silent Synapse Activation by Plasma‐Induced Oxygen Vacancies in TiO2 Nanowire‐Based Memristor (Adv. Electron. Mater. 9/2020).
Published in:
Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000536
By:
- Shan, Xuanyu;
- Wang, Zhongqiang;
- Lin, Ya;
- Zeng, Tao;
- Zhao, Xiaoning;
- Xu, Haiyang;
- Liu, Yichun
Publication type:
Article
Silent Synapse: Silent Synapse Activation by Plasma‐Induced Oxygen Vacancies in TiO2 Nanowire‐Based Memristor (Adv. Electron. Mater. 9/2020)
Published in:
Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000536
By:
- Shan, Xuanyu;
- Wang, Zhongqiang;
- Lin, Ya;
- Zeng, Tao;
- Zhao, Xiaoning;
- Xu, Haiyang;
- Liu, Yichun
Publication type:
Article
Masthead: (Adv. Electron. Mater. 9/2020).
Published in:
Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202070038
Publication type:
Article
Self‐Healing Devices: Intrinsically Stretchable and Self‐Healing Electroconductive Composites Based on Supramolecular Organic Polymer Embedded with Copper Microparticles (Adv. Electron. Mater. 9/2020).
Published in:
Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202070037
By:
- Yeasmin, Rubaya;
- Duy, Le Thai;
- Han, Seungik;
- Seo, Hyungtak
Publication type:
Article
Memristors: In‐Memory Hamming Weight Calculation in a 1T1R Memristive Array (Adv. Electron. Mater. 9/2020).
Published in:
Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202070036
By:
- Cheng, Long;
- Li, Jiancong;
- Zheng, Hao‐Xuan;
- Yuan, Peng;
- Yin, Jiahao;
- Yang, Ling;
- Luo, Qing;
- Li, Yi;
- Lv, Hangbing;
- Chang, Ting‐Chang;
- Miao, Xiangshui
Publication type:
Article
Multifunctional Protein Nanowire Humidity Sensors for Green Wearable Electronics.
Published in:
Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000721
By:
- Liu, Xiaomeng;
- Fu, Tianda;
- Ward, Joy;
- Gao, Hongyan;
- Yin, Bing;
- Woodard, Trevor;
- Lovley, Derek R.;
- Yao, Jun
Publication type:
Article
Maskless Formation of Conductive Carbon Layer on Leather for Highly Sensitive Flexible Strain Sensors.
Published in:
Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000549
By:
- Wang, Ziyang;
- Chen, Bo;
- Sun, Shibin;
- Pan, Likun;
- Gao, Yang
Publication type:
Article
Combined Printing of Highly Aligned Single‐Walled Carbon Nanotube Thin Films with Liquid Metal for Direct Fabrication of Functional Electronic Devices.
Published in:
Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000537
By:
- Li, Qian;
- Liu, Jing
Publication type:
Article
Silent Synapse Activation by Plasma‐Induced Oxygen Vacancies in TiO2 Nanowire‐Based Memristor.
Published in:
Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000536
By:
- Shan, Xuanyu;
- Wang, Zhongqiang;
- Lin, Ya;
- Zeng, Tao;
- Zhao, Xiaoning;
- Xu, Haiyang;
- Liu, Yichun
Publication type:
Article
Intrinsically Stretchable and Self‐Healing Electroconductive Composites Based on Supramolecular Organic Polymer Embedded with Copper Microparticles.
Published in:
Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000527
By:
- Yeasmin, Rubaya;
- Duy, Le Thai;
- Han, Seungik;
- Seo, Hyungtak
Publication type:
Article
Wafer‐Scale Organic Complementary Inverters Fabricated with Self‐Assembled Monolayer Field‐Effect Transistors.
Published in:
Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000515
By:
- Zhao, Baolin;
- Gothe, Bastian;
- Sarcletti, Marco;
- Zhao, Yuhan;
- Rejek, Tobias;
- Liu, Xin;
- Park, Hyoungwon;
- Strohriegl, Peter;
- Halik, Marcus
Publication type:
Article
Controllable p‐to‐n Type Conductance Transition in Top‐Gated Graphene Field Effect Transistor by Interface Trap Engineering.
Published in:
Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000496
By:
- Peng, Songang;
- Jin, Zhi;
- Yao, Yao;
- Huang, Xinnan;
- Zhang, Dayong;
- Niu, Jiebin;
- Shi, Jingyuan;
- Zhang, Yanhui;
- Yu, Guanghui
Publication type:
Article
A Structurally Simple but High‐Performing Donor–Acceptor Polymer for Field‐Effect Transistor Applications.
Published in:
Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000490
By:
- Aniés, Filip;
- Wang, Simeng;
- Hodsden, Thomas;
- Panidi, Julianna;
- Fei, Zhuping;
- Jiao, Xuechen;
- Wong, Yi Hang Cherie;
- McNeill, Christopher R.;
- Anthopoulos, Thomas D.;
- Heeney, Martin
Publication type:
Article
Understanding of Selector‐Less 1S1R Type Cu‐Based CBRAM Devices by Controlling Sub‐Quantum Filament.
Published in:
Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000488
By:
- Banerjee, Writam;
- Hwang, Hyunsang
Publication type:
Article
Complementary Type Ferroelectric Memory Transistor Circuits with P‐ and N‐Channel MoTe2.
Published in:
Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000479
By:
- Hong, Sungjae;
- Kim, Kang Lib;
- Cho, Yongjae;
- Cho, Hyunmin;
- Park, Ji Hoon;
- Park, Cheolmin;
- Im, Seongil
Publication type:
Article
In‐Memory Hamming Weight Calculation in a 1T1R Memristive Array.
Published in:
Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000457
By:
- Cheng, Long;
- Li, Jiancong;
- Zheng, Hao‐Xuan;
- Yuan, Peng;
- Yin, Jiahao;
- Yang, Ling;
- Luo, Qing;
- Li, Yi;
- Lv, Hangbing;
- Chang, Ting‐Chang;
- Miao, Xiangshui
Publication type:
Article
Patterning 2D Organic Crystalline Semiconductors via Thermally Induced Self‐Assembly.
Published in:
Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000438
By:
- Duan, Yiwei;
- Qian, Jun;
- Guo, Jianhang;
- Jiang, Sai;
- Yang, Chengdong;
- Wang, Hengyuan;
- Wang, Qijing;
- Shi, Yi;
- Li, Yun
Publication type:
Article
Highly Linear and Symmetric Weight Modification in HfO2‐Based Memristive Devices for High‐Precision Weight Entries.
Published in:
Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000434
By:
- Ryu, Jin Joo;
- Jeon, Kanghyeok;
- Kim, Guhyun;
- Yang, Min Kyu;
- Kim, Chunjoong;
- Jeong, Doo Seok;
- Kim, Gun Hwan
Publication type:
Article
Graphene–Polyurethane Coatings for Deformable Conductors and Electromagnetic Interference Shielding.
Published in:
Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000429
By:
- Cataldi, Pietro;
- Papageorgiou, Dimitrios G.;
- Pinter, Gergo;
- Kretinin, Andrey V.;
- Sampson, William W.;
- Young, Robert J.;
- Bissett, Mark;
- Kinloch, Ian A.
Publication type:
Article
Controlling Defect Formation of Nanoscale AlN: Toward Efficient Current Conduction of Ultrawide‐Bandgap Semiconductors.
Published in:
Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000337
By:
- Wu, Yuanpeng;
- Laleyan, David A.;
- Deng, Zihao;
- Ahn, Chihyo;
- Aiello, Anthony F.;
- Pandey, Ayush;
- Liu, Xianhe;
- Wang, Ping;
- Sun, Kai;
- Ahmadi, Elaheh;
- Sun, Yi;
- Kira, Mackillo;
- Bhattacharya, Pallab K.;
- Kioupakis, Emmanouil;
- Mi, Zetian
Publication type:
Article
Giant Field‐Induced Strain with Low Hysteresis and Boosted Energy Storage Performance under Low Electric Field in (Bi0.5Na0.5)TiO3‐Based Grain Orientation‐Controlled Ceramics.
Published in:
Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000332
By:
- Bai, Wangfeng;
- Zhao, Xinyu;
- Ding, Yuqin;
- Wang, Leijie;
- Zheng, Peng;
- Hao, Jigong;
- Zhai, Jiwei
Publication type:
Article
A Novel Mitigation Mechanism for Photo‐Induced Trapping in an Anthradithiophene Derivative Using Additives.
Published in:
Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000250
By:
- Nasrallah, Iyad;
- Ravva, Mahesh Kumar;
- Broch, Katharina;
- Novak, Jiri;
- Armitage, John;
- Schweicher, Guillaume;
- Sadhanala, Aditya;
- Anthony, John E.;
- Bredas, Jean‐Luc;
- Sirringhaus, Henning
Publication type:
Article
Low‐Dimensional Hybrid Perovskites for Field‐Effect Transistors with Improved Stability: Progress and Challenges.
Published in:
Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000137
By:
- Liang, Yuhang;
- Li, Feng;
- Zheng, Rongkun
Publication type:
Article
Nonvolatile Memory and Artificial Synaptic Characteristics in Thin‐Film Transistors with Atomic Layer Deposited HfOx Gate Insulator and ZnO Channel Layer.
Published in:
Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000412
By:
- Lee, Hyerin;
- Beom, Keonwon;
- Kim, Minju;
- Kang, Chi Jung;
- Yoon, Tae‐Sik
Publication type:
Article

Works matching IS 2199160X AND DT 2020 AND VI 6 AND IP 9

Silent Synapse: Silent Synapse Activation by Plasma‐Induced Oxygen Vacancies in TiO<sub>2</sub> Nanowire‐Based Memristor (Adv. Electron. Mater. 9/2020).

Silent Synapse: Silent Synapse Activation by Plasma‐Induced Oxygen Vacancies in TiO<sub>2</sub> Nanowire‐Based Memristor (Adv. Electron. Mater. 9/2020)

Masthead: (Adv. Electron. Mater. 9/2020).

Self‐Healing Devices: Intrinsically Stretchable and Self‐Healing Electroconductive Composites Based on Supramolecular Organic Polymer Embedded with Copper Microparticles (Adv. Electron. Mater. 9/2020).

Memristors: In‐Memory Hamming Weight Calculation in a 1T1R Memristive Array (Adv. Electron. Mater. 9/2020).

Multifunctional Protein Nanowire Humidity Sensors for Green Wearable Electronics.

Maskless Formation of Conductive Carbon Layer on Leather for Highly Sensitive Flexible Strain Sensors.

Combined Printing of Highly Aligned Single‐Walled Carbon Nanotube Thin Films with Liquid Metal for Direct Fabrication of Functional Electronic Devices.

Silent Synapse Activation by Plasma‐Induced Oxygen Vacancies in TiO<sub>2</sub> Nanowire‐Based Memristor.

Intrinsically Stretchable and Self‐Healing Electroconductive Composites Based on Supramolecular Organic Polymer Embedded with Copper Microparticles.

Wafer‐Scale Organic Complementary Inverters Fabricated with Self‐Assembled Monolayer Field‐Effect Transistors.

Controllable p‐to‐n Type Conductance Transition in Top‐Gated Graphene Field Effect Transistor by Interface Trap Engineering.

A Structurally Simple but High‐Performing Donor–Acceptor Polymer for Field‐Effect Transistor Applications.

Understanding of Selector‐Less 1S1R Type Cu‐Based CBRAM Devices by Controlling Sub‐Quantum Filament.

Complementary Type Ferroelectric Memory Transistor Circuits with P‐ and N‐Channel MoTe<sub>2</sub>.

In‐Memory Hamming Weight Calculation in a 1T1R Memristive Array.

Patterning 2D Organic Crystalline Semiconductors via Thermally Induced Self‐Assembly.

Highly Linear and Symmetric Weight Modification in HfO<sub>2</sub>‐Based Memristive Devices for High‐Precision Weight Entries.

Graphene–Polyurethane Coatings for Deformable Conductors and Electromagnetic Interference Shielding.

Controlling Defect Formation of Nanoscale AlN: Toward Efficient Current Conduction of Ultrawide‐Bandgap Semiconductors.

Giant Field‐Induced Strain with Low Hysteresis and Boosted Energy Storage Performance under Low Electric Field in (Bi<sub>0.5</sub>Na<sub>0.5</sub>)TiO<sub>3</sub>‐Based Grain Orientation‐Controlled Ceramics.

A Novel Mitigation Mechanism for Photo‐Induced Trapping in an Anthradithiophene Derivative Using Additives.

Low‐Dimensional Hybrid Perovskites for Field‐Effect Transistors with Improved Stability: Progress and Challenges.

Nonvolatile Memory and Artificial Synaptic Characteristics in Thin‐Film Transistors with Atomic Layer Deposited HfOx Gate Insulator and ZnO Channel Layer.