Works matching IS 2199160X AND DT 2020 AND VI 6 AND IP 8

Results: 37

Sensors: Transparent and Stretchable Strain Sensors with Improved Sensitivity and Reliability Based on Ag NWs and PEDOT:PSS Patterned Microstructures (Adv. Electron. Mater. 8/2020).

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202070034

By:

Shen, Gengzhe;
Chen, Bohua;
Liang, Tianlong;
Liu, Zhihao;
Zhao, Sirou;
Liu, Junyan;
Zhang, Chi;
Yang, Weijia;
Wang, Yiliang;
He, Xin

Publication type:

Article

Masthead: (Adv. Electron. Mater. 8/2020).

Published in:: Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202070035
Publication type:: Article

Great Enhancement of Self‐Powered Photoresponse Performance of C3H8NSi‐TiO2 NRAs/n‐Si Heterojunction by Build‐In and Build‐Out Electric Field Jointly Promoting Carrier Separation.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000501

By:

Hou, Zhidong;
Li, Guixia;
Ling, Cuicui;
Wang, Hongyan;
Zhu, Lei;
Guo, Tianchao;
Zhang, Tuo;
Feng, Bingxin;
Cao, Min;
Xue, Qingzhong

Publication type:

Article

Atomic Layer Deposition of Vanadium Oxide as Hole‐Selective Contact for Crystalline Silicon Solar Cells.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000467

By:

Yang, Xinbo;
Xu, Hang;
Liu, Wenzhu;
Bi, Qunyu;
Xu, Lujia;
Kang, Jingxuan;
Hedhili, Mohamed N.;
Sun, Baoquan;
Zhang, Xiaohong;
De Wolf, Stefaan

Publication type:

Article

Ultrahigh Sensitivity of Flexible Thermistors Based on 3D Porous Graphene Characterized by Imbedded Microheaters.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000451

By:

Wu, Jin;
Yang, Xing;
Ding, Haojun;
Wei, Yaoming;
Wu, Zixuan;
Tao, Kai;
Yang, Bo‐Ru;
Liu, Chuan;
Wang, Xiaotian;
Feng, Shuanglong;
Xie, Xi

Publication type:

Article

PEDOT:PSS Microchannel‐Based Highly Sensitive Stretchable Strain Sensor.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000445

By:

Bhattacharjee, Mitradip;
Soni, Mahesh;
Escobedo, Pablo;
Dahiya, Ravinder

Publication type:

Article

Bioelectronics on Mammalian Collagen.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000391

By:

Moreno, Salvador;
Keshtkar, Javad;
Rodriguez‐Davila, Rodolfo Antonio;
Bazaid, Arwa;
Ibrahim, Hossam;
Rodriguez, Brian J.;
Quevedo‐Lopez, Manuel Angel;
Minary‐Jolandan, Majid

Publication type:

Article

Universal Memory Characteristics and Degradation Features of ZrO2‐Based Bipolar Resistive Memory.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000368

By:

Hur, Ji‐Hyun;
Lee, Dongsoo

Publication type:

Article

Role of Singlet and Triplet Excitons on the Electrical Stability of Polymer Light‐Emitting Diodes.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000367

By:

Zee, Bas;
Paulus, Sarina;
Png, Rui‐Qi;
Ho, Peter K. H.;
Chua, Lay‐Lay;
Wetzelaer, Gert‐Jan A. H.;
Blom, Paul W. M.

Publication type:

Article

Resonant Tunneling and Negative Differential Resistance in Black Phosphorus Vertical Heterostructures.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000318

By:

Xu, Kai;
Wynne, Eric;
Zhu, Wenjuan

Publication type:

Article

Heavily Crosslinked, High‐k Ultrathin Polymer Dielectrics for Flexible, Low‐Power Organic Thin‐Film Transistors (OTFTs).

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000314

By:

Choi, Junhwan;
Kang, Juyeon;
Lee, Changhyeon;
Jeong, Kihoon;
Im, Sung Gap

Publication type:

Article

Correlating the Structural and Photophysical Properties of Ortho, Meta, and Para‐Carboranyl–Anthracene Dyads.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000312

By:

Marsh, Adam V.;
Dyson, Matthew J.;
Cheetham, Nathan J.;
Bidwell, Matthew;
Little, Mark;
White, Andrew J. P.;
Warriner, Colin N.;
Swain, Anthony C.;
McCulloch, Iain;
Stavrinou, Paul N.;
Meskers, Stefan C. J.;
Heeney, Martin

Publication type:

Article

Controlled Memory and Threshold Switching Behaviors in a Heterogeneous Memristor for Neuromorphic Computing.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000309

By:

Li, Hao‐Yang;
Huang, Xiao‐Di;
Yuan, Jun‐Hui;
Lu, Yi‐Fan;
Wan, Tian‐Qing;
Li, Yi;
Xue, Kan‐Hao;
He, Yu‐Hui;
Xu, Ming;
Tong, Hao;
Miao, Xiang‐Shui

Publication type:

Article

Complementary Lateral‐Spin–Orbit Building Blocks for Programmable Logic and In‐Memory Computing.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000296

By:

Zhang, Nan;
Cao, Yi;
Li, Yucai;
Rushforth, Andrew W.;
Ji, Yang;
Zheng, Houzhi;
Wang, Kaiyou

Publication type:

Article

Emerging Superconductivity and the Origin of Its Enhancement in Pressurized Topological Nodal‐Line Semimetal SrAs3.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000293

By:

Qi, Mengyao;
Zhu, Xiangde;
Zhou, Yonghui;
An, Chao;
Chen, Chunhua;
Yuan, Yifang;
Zhang, Bowen;
Wang, Shuyang;
Zhou, Ying;
Chen, Xuliang;
Zhang, Ranran;
Tian, Mingliang;
Yang, Zhaorong

Publication type:

Article

Achieving High Thermoelectric Performance by Introducing 3D Atomically Thin Conductive Framework in Porous Bi2Te2.7Se0.3‐Carbon Nanotube Hybrids.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000292

By:

Li, Shuankui;
Wang, Rui;
Zhu, Weiming;
Chu, Mihai;
Huang, Zhongyuan;
Zhang, Yanjun;
Zhao, Wenguang;
Liu, Fusheng;
Luo, Jun;
Xiao, Yinguo;
Pan, Feng

Publication type:

Article

InGaZnO Tunnel and Junction Transistors Based on Vertically Stacked Black Phosphorus/InGaZnO Heterojunctions.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000291

By:

Bi, Jiahe;
Zou, Xuming;
Lv, Yawei;
Li, Guoli;
Liu, Xingqiang;
Liu, Yuan;
Yu, Ting;
Yang, Zhenyu;
Liao, Lei

Publication type:

Article

Giant Perpendicular Magnetic Anisotropy in Mo‐Based Double‐Interface Free Layer Structure for Advanced Magnetic Tunnel Junctions.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000271

By:

Cheng, Houyi;
Chen, Jingle;
Peng, Shouzhong;
Zhang, Boyu;
Wang, Zilu;
Zhu, Daoqian;
Shi, Kewen;
Eimer, Sylvain;
Wang, Xinran;
Guo, Zongxia;
Xu, Yong;
Xiong, Danrong;
Cao, Kaihua;
Zhao, Weisheng

Publication type:

Article

Involvement of Unsaturated Switching in the Endurance Cycling of Si‐doped HfO2 Ferroelectric Thin Films.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000264

By:

Li, Shuaidong;
Zhou, Dayu;
Shi, Zhixin;
Hoffmann, Michael;
Mikolajick, Thomas;
Schroeder, Uwe

Publication type:

Article

Experimental Estimate of the Holstein Electron–Phonon Coupling Constants in Perylene.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000208

By:

Masino, Matteo;
Salzillo, Tommaso;
Brillante, Aldo;
Della Valle, Raffaele G.;
Venuti, Elisabetta;
Girlando, Alberto

Publication type:

Article

Skin Conformal and Antibacterial PPy‐Leather Electrode for ECG Monitoring.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000259

By:

Zhang, Kang;
Kang, Naiwen;
Zhang, Bo;
Xie, Ruijie;
Zhu, Jingyu;
Zou, Binghua;
Liu, Yihan;
Chen, Yuanyuan;
Shi, Wei;
Zhang, Weina;
Huang, Wei;
Wu, Jiansheng;
Huo, Fengwei

Publication type:

Article

Voltage Control of Skyrmion Bubbles for Topological Flexible Spintronic Devices.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000246

By:

Yang, Qu;
Cheng, Yuxin;
Li, Yaojin;
Zhou, Ziyao;
Liang, Jinghua;
Zhao, Xinger;
Hu, Zhongqiang;
Peng, Renci;
Yang, Hongxin;
Liu, Ming

Publication type:

Article

Drift‐Diffusion Study of the IQE Roll‐Off in Blue Thermally Activated Delayed Fluorescence OLEDs.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000245

By:

Rossi, Daniele;
Palazzo, Daniele;
Di Carlo, Aldo;
Auf der Maur, Matthias

Publication type:

Article

Quantum Transport in Topological Surface States of Selectively Grown Bi2Te3 Nanoribbons.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000205

By:

Rosenbach, Daniel;
Oellers, Nico;
Jalil, Abdur Rehman;
Mikulics, Martin;
Kölzer, Jonas;
Zimmermann, Erik;
Mussler, Gregor;
Bunte, Stephany;
Grützmacher, Detlev;
Lüth, Hans;
Schäpers, Thomas

Publication type:

Article

Chemical Doping of Conjugated Polymers with the Strong Oxidant Magic Blue.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000249

By:

Hofmann, Anna I.;
Kroon, Renee;
Zokaei, Sepideh;
Järsvall, Emmy;
Malacrida, Claudia;
Ludwigs, Sabine;
Biskup, Till;
Müller, Christian

Publication type:

Article

Comproportionation Reaction Synthesis to Realize High‐Performance Water‐Induced Metal‐Oxide Thin‐Film Transistors.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000072

By:

Liu, Qihan;
Zhao, Chun;
Mitrovic, Ivona Z.;
Xu, Wangying;
Yang, Li;
Zhao, Ce Zhou

Publication type:

Article

Demonstration of Wide Bandgap AlGaN/GaN Negative‐Capacitance High‐Electron‐Mobility Transistors (NC‐HEMTs) Using Barium Titanate Ferroelectric Gates.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000074

By:

Chandrasekar, Hareesh;
Razzak, Towhidur;
Wang, Caiyu;
Reyes, Zeltzin;
Majumdar, Kausik;
Rajan, Siddharth

Publication type:

Article

Two‐Step Plasma Treatment Designed for High‐Performance Flexible Amorphous ZnAlSnO Thin‐Film Transistors Replacing Thermal Annealing.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000233

By:

Lu, Rongkai;
Lu, Jianguo;
Wei, Xishuo;
Yue, Shilu;
Li, Siqin;
Lu, Bojing;
Zhao, Yi;
Zhu, Liping;
Chen, Lingxiang;
Ye, Zhizhen

Publication type:

Article

Rubbing and Drawing: Generic Ways to Improve the Thermoelectric Power Factor of Organic Semiconductors?

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000218

By:

Scheunemann, Dorothea;
Vijayakumar, Vishnu;
Zeng, Huiyan;
Durand, Pablo;
Leclerc, Nicolas;
Brinkmann, Martin;
Kemerink, Martijn

Publication type:

Article

Flexible Thermoelectric Double‐Layer Inorganic/Organic Composites Synthesized by Additive Manufacturing.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000214

By:

Du, Yong;
Chen, Jiageng;
Meng, Qiufeng;
Xu, Jiayue;
Lu, Jun;
Paul, Biplab;
Eklund, Per

Publication type:

Article

Energy Level Alignment in Ternary Organic Solar Cells.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000213

By:

Lami, Vincent;
Hofstetter, Yvonne J.;
Butscher, Julian F.;
Vaynzof, Yana

Publication type:

Article

Atomically Controlled Tunable Doping in High‐Performance WSe2 Devices.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.201901304

By:

Pang, Chin‐Sheng;
Hung, Terry Y. T.;
Khosravi, Ava;
Addou, Rafik;
Wang, Qingxiao;
Kim, Moon J.;
Wallace, Robert M.;
Chen, Zhihong

Publication type:

Article

Highly Uniform Two‐Terminal Artificial Synapses Based on Polycrystalline Hf0.5Zr0.5O2 for Sparsified Back Propagation Networks.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000204

By:

Lu, Yingming;
Liu, Keqin;
Yang, Jingjing;
Zhang, Teng;
Cheng, Caidie;
Dang, Bingjie;
Xu, Liying;
Zhu, Jiadi;
Huang, Qianqian;
Huang, Ru;
Yang, Yuchao

Publication type:

Article

Generation of Axially Polar Ferroelectricity in a Columnar Liquid Crystal Phase by Introducing Chirality.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000201

By:

Akiyama, Azumi;
Jido, Keita;
Kohri, Michinari;
Taniguchi, Tatsuo;
Kishikawa, Keiki

Publication type:

Article

All‐Paper, All‐Organic, Cuttable, and Foldable Pressure Sensor with Tuneable Conductivity Polypyrrole.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.201901426

By:

Zhao, Pengfei;
Zhang, Ruimin;
Tong, Yanhong;
Zhao, Xiaoli;
Tang, Qingxin;
Liu, Yichun

Publication type:

Article

Reconfigurable and Recyclable Circuits Based on Liquid Passive Components.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.201901388

By:

Gao, Naiwei;
Wu, Xun;
He, Yonglin;
Ma, Qiang;
Wang, Yapei

Publication type:

Article

Transparent and Stretchable Strain Sensors with Improved Sensitivity and Reliability Based on Ag NWs and PEDOT:PSS Patterned Microstructures.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.201901360

By:

Shen, Gengzhe;
Chen, Bohua;
Liang, Tianlong;
Liu, Zhihao;
Zhao, Sirou;
Liu, Junyan;
Zhang, Chi;
Yang, Weijia;
Wang, Yiliang;
He, Xin

Publication type:

Article

Works matching IS 2199160X AND DT 2020 AND VI 6 AND IP 8

Sensors: Transparent and Stretchable Strain Sensors with Improved Sensitivity and Reliability Based on Ag NWs and PEDOT:PSS Patterned Microstructures (Adv. Electron. Mater. 8/2020).

Masthead: (Adv. Electron. Mater. 8/2020).

Great Enhancement of Self‐Powered Photoresponse Performance of C<sub>3</sub>H<sub>8</sub>NSi‐TiO<sub>2</sub> NRAs/n‐Si Heterojunction by Build‐In and Build‐Out Electric Field Jointly Promoting Carrier Separation.

Atomic Layer Deposition of Vanadium Oxide as Hole‐Selective Contact for Crystalline Silicon Solar Cells.

Ultrahigh Sensitivity of Flexible Thermistors Based on 3D Porous Graphene Characterized by Imbedded Microheaters.

PEDOT:PSS Microchannel‐Based Highly Sensitive Stretchable Strain Sensor.

Bioelectronics on Mammalian Collagen.

Universal Memory Characteristics and Degradation Features of ZrO<sub>2</sub>‐Based Bipolar Resistive Memory.

Role of Singlet and Triplet Excitons on the Electrical Stability of Polymer Light‐Emitting Diodes.

Resonant Tunneling and Negative Differential Resistance in Black Phosphorus Vertical Heterostructures.

Heavily Crosslinked, High‐k Ultrathin Polymer Dielectrics for Flexible, Low‐Power Organic Thin‐Film Transistors (OTFTs).

Correlating the Structural and Photophysical Properties of Ortho, Meta, and Para‐Carboranyl–Anthracene Dyads.

Controlled Memory and Threshold Switching Behaviors in a Heterogeneous Memristor for Neuromorphic Computing.

Complementary Lateral‐Spin–Orbit Building Blocks for Programmable Logic and In‐Memory Computing.

Emerging Superconductivity and the Origin of Its Enhancement in Pressurized Topological Nodal‐Line Semimetal SrAs<sub>3</sub>.

Achieving High Thermoelectric Performance by Introducing 3D Atomically Thin Conductive Framework in Porous Bi<sub>2</sub>Te<sub>2.7</sub>Se<sub>0.3</sub>‐Carbon Nanotube Hybrids.

InGaZnO Tunnel and Junction Transistors Based on Vertically Stacked Black Phosphorus/InGaZnO Heterojunctions.

Giant Perpendicular Magnetic Anisotropy in Mo‐Based Double‐Interface Free Layer Structure for Advanced Magnetic Tunnel Junctions.

Involvement of Unsaturated Switching in the Endurance Cycling of Si‐doped HfO<sub>2</sub> Ferroelectric Thin Films.

Experimental Estimate of the Holstein Electron–Phonon Coupling Constants in Perylene.

Skin Conformal and Antibacterial PPy‐Leather Electrode for ECG Monitoring.

Voltage Control of Skyrmion Bubbles for Topological Flexible Spintronic Devices.

Drift‐Diffusion Study of the IQE Roll‐Off in Blue Thermally Activated Delayed Fluorescence OLEDs.

Quantum Transport in Topological Surface States of Selectively Grown Bi<sub>2</sub>Te<sub>3</sub> Nanoribbons.

Chemical Doping of Conjugated Polymers with the Strong Oxidant Magic Blue.

Comproportionation Reaction Synthesis to Realize High‐Performance Water‐Induced Metal‐Oxide Thin‐Film Transistors.

Demonstration of Wide Bandgap AlGaN/GaN Negative‐Capacitance High‐Electron‐Mobility Transistors (NC‐HEMTs) Using Barium Titanate Ferroelectric Gates.

Two‐Step Plasma Treatment Designed for High‐Performance Flexible Amorphous ZnAlSnO Thin‐Film Transistors Replacing Thermal Annealing.

Rubbing and Drawing: Generic Ways to Improve the Thermoelectric Power Factor of Organic Semiconductors?

Flexible Thermoelectric Double‐Layer Inorganic/Organic Composites Synthesized by Additive Manufacturing.

Energy Level Alignment in Ternary Organic Solar Cells.

Atomically Controlled Tunable Doping in High‐Performance WSe<sub>2</sub> Devices.

Highly Uniform Two‐Terminal Artificial Synapses Based on Polycrystalline Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> for Sparsified Back Propagation Networks.

Generation of Axially Polar Ferroelectricity in a Columnar Liquid Crystal Phase by Introducing Chirality.

All‐Paper, All‐Organic, Cuttable, and Foldable Pressure Sensor with Tuneable Conductivity Polypyrrole.

Reconfigurable and Recyclable Circuits Based on Liquid Passive Components.

Transparent and Stretchable Strain Sensors with Improved Sensitivity and Reliability Based on Ag NWs and PEDOT:PSS Patterned Microstructures.