Works matching IS 2199160X AND DT 2020 AND VI 6 AND IP 7

Results: 36

Low‐Power Computing: Vertical‐Tunneling Field‐Effect Transistor Based on WSe2‐MoS2 Heterostructure with Ion Gel Dielectric (Adv. Electron. Mater. 7/2020).

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202070030

By:

Jeon, Hyun Bae;
Shin, Gwang Hyuk;
Lee, Khang June;
Choi, Sung‐Yool

Publication type:

Article

Molecular Junctions: Molecular Signature and Activationless Transport in Cobalt‐Terpyridine‐Based Molecular Junctions (Adv. Electron. Mater. 7/2020).

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202070033

By:

Nguyen, Quyen;
Tefashe, Ushula;
Martin, Pascal;
Della Rocca, Maria Luisa;
Lafolet, Frederic;
Lafarge, Philippe;
McCreery, Richard L.;
Lacroix, Jean‐Christophe

Publication type:

Article

Masthead: (Adv. Electron. Mater. 7/2020).

Published in:: Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202070032
Publication type:: Article

2D Electronics: The Application of a High‐κ Polymer Dielectric in Graphene Transistors (Adv. Electron. Mater. 7/2020).

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202070031

By:

Wen, Jiamin;
Yan, Chengyuan;
Sun, Zhenhua

Publication type:

Article

Electronic Performance of Polymer Carbon‐Paste Nanoallotropes from 0D to 3D as Novel Gate Electrodes in Water‐Gated Organic Field‐Effect Transistors.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000431

By:

Tamayo, Adrián;
Muñoz, Jose;
Mas‐Torrent, Marta

Publication type:

Article

Ferroelastic‐Domain‐Assisted Mechanical Switching of Ferroelectric Domains in Pb(Zr,Ti)O3 Thin Films.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000300

By:

Yuan, Guoliang;
Huang, Houbing;
Li, Chen;
Liu, Di;
Cheng, Zhihao;
Wu, Di

Publication type:

Article

High‐Performance On‐Chip Electron Sources Based on Electroformed Silicon Oxide.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000268

By:

Yang, Wei;
Li, Zhiwei;
Wang, Yuwei;
Shen, Jun;
Wei, Dapeng;
Wei, Xianlong

Publication type:

Article

Ultrastretchable, Self‐Healable, and Wearable Epidermal Sensors Based on Ultralong Ag Nanowires Composited Binary‐Networked Hydrogels.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000267

By:

Zhao, Wen;
Qu, Xinyu;
Xu, Qian;
Lu, Yao;
Yuan, Wei;
Wang, Wenjun;
Wang, Qian;
Huang, Wei;
Dong, Xiaochen

Publication type:

Article

Ion‐Activated Greatly Enhanced Conductivity of Thin Organic Semiconducting Films in Two‐Terminal Devices.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000238

By:

Kapetanakis, Eleftherios;
Katsogridakis, Charalampos;
Dimotikali, Dimitra;
Argitis, Panagiotis;
Normand, Pascal

Publication type:

Article

Hybrid Graphene/Carbon Nanofiber Wax Emulsion for Paper‐Based Electronics and Thermal Management.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000232

By:

Wu, Xinhui;
Steiner, Pietro;
Raine, Thomas;
Pinter, Gergo;
Kretinin, Andrey;
Kocabas, Coskun;
Bissett, Mark;
Cataldi, Pietro

Publication type:

Article

n‐Type Dirac‐Source Field‐Effect Transistors Based on a Graphene/Carbon Nanotube Heterojunction.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000258

By:

Xiao, Mengmeng;
Lin, Yanxia;
Xu, Lin;
Deng, Bing;
Peng, Hailin;
Peng, Lian‐Mao;
Zhang, Zhiyong

Publication type:

Article

Facile Fabrication of Highly Uniform Tellurium Nanorods for Self‐Powered Flexible Optoelectronics.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000240

By:

Xiao, Qi;
Li, Xiang‐Yang;
Zhang, Ze‐Qi;
Hu, Chen‐Xia;
Dun, Guan‐Hua;
Sun, Bing;
Peng, Yong;
Wang, Qiang;
Zheng, Zijian;
Zhang, Hao‐Li

Publication type:

Article

High‐Performance Zinc Tin Oxide TFTs with Active Layers Deposited by Atomic Layer Deposition.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000195

By:

Allemang, Christopher R.;
Cho, Tae H.;
Trejo, Orlando;
Ravan, Shantam;
Rodríguez, Robin E.;
Dasgupta, Neil P.;
Peterson, Rebecca L.

Publication type:

Article

Unraveling Structure and Device Operation of Organic Permeable Base Transistors.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000230

By:

Darbandy, Ghader;
Dollinger, Felix;
Formánek, Petr;
Hübner, René;
Resch, Stefan;
Roemer, Christian;
Fischer, Axel;
Leo, Karl;
Kloes, Alexander;
Kleemann, Hans

Publication type:

Article

Theoretical and Experimental Investigations on the Aggregation‐Enhanced Emission from Dark State: Vibronic Coupling Effect.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000255

By:

Yin, Ping‐An;
Wan, Qing;
Niu, Yingli;
Peng, Qian;
Wang, Zhiming;
Li, Yuxuan;
Qin, Anjun;
Shuai, Zhigang;
Tang, Ben Zhong

Publication type:

Article

In Situ Nitrogen‐Doped Covalent Triazine‐Based Multiporous Cross‐Linking Framework for High‐Performance Energy Storage.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000253

By:

Wu, Chuanguang;
Zhang, Hao;
Hu, Mingjun;
Shan, Guangcun;
Gao, Jiefeng;
Liu, Jinzhang;
Zhou, Xianglin;
Yang, Jun

Publication type:

Article

Lateral Electric‐Field‐Controlled Perpendicular Magnetic Anisotropy and Current‐Induced Magnetization Switching in Multiferroic Heterostructures.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000229

By:

Wang, Mengxi;
Guo, Qi;
Xu, Xiaoguang;
Zhang, Zeyu;
Ren, Zengyao;
Zhu, Libai;
Meng, Kangkang;
Chen, Jikun;
Wu, Yong;
Miao, Jun;
Jiang, Yong

Publication type:

Article

Multiple Stimuli Responsive and Identifiable Zwitterionic Ionic Conductive Hydrogel for Bionic Electronic Skin.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000239

By:

Huang, Hailong;
Han, Lu;
Fu, Xiaobin;
Wang, Yanling;
Yang, Zhongli;
Pan, Likun;
Xu, Min

Publication type:

Article

Operational Stability Enhancement of Polymeric Organic Field‐Effect Transistors by Amorphous Perfluoropolymers Chemically Anchored to Gate Dielectric Surfaces.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000161

By:

Bulgarevich, Kirill;
Sakamoto, Kenji;
Yasuda, Takeshi;
Minari, Takeo;
Takeuchi, Masayuki

Publication type:

Article

Graphdiyne Ink for Ionic Liquid Gated Printed Transistor.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000157

By:

Zhang, Mingjia;
Li, Yuan;
Li, Xiaodong;
Wang, Naiyin;
Huang, Changshui

Publication type:

Article

Skin‐Like Hybrid Integrated Circuits Conformal to Face for Continuous Respiratory Monitoring.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000145

By:

Chen, Ying;
Liu, Fei;
Lu, Bingwei;
Zhang, Yingchao;
Feng, Xue

Publication type:

Article

Photoelectrodes with Polydopamine Thin Films Incorporating a Bacterial Photoenzyme.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000140

By:

Lo Presti, Marco;
Giangregorio, Maria Michela;
Ragni, Roberta;
Giotta, Livia;
Guascito, Maria Rachele;
Comparelli, Roberto;
Fanizza, Elisabetta;
Tangorra, Roberto R.;
Agostiano, Angela;
Losurdo, Maria;
Farinola, Gianluca M.;
Milano, Francesco;
Trotta, Massimo

Publication type:

Article

Probing Coulomb Interactions on Charge Transport in Few‐Layer Organic Crystalline Semiconductors by the Gated van der Pauw Method.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000136

By:

Jiang, Sai;
Qian, Jun;
Wang, Qijing;
Duan, Yiwei;
Guo, Jianhang;
Zhang, Bowen;
Sun, Huabin;
Wang, Xinran;
Liu, Chuan;
Shi, Yi;
Li, Yun

Publication type:

Article

Fabrication and Operating Mechanism of Deep‐UV Transparent Semiconducting SrSnO3‐Based Thin Film Transistor.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000100

By:

Wei, Mian;
Gong, Lizhikun;
Liang, Dou‐dou;
Cho, Hai Jun;
Ohta, Hiromichi

Publication type:

Article

Field Emission in Ultrathin PdSe2 Back‐Gated Transistors.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000094

By:

Di Bartolomeo, Antonio;
Pelella, Aniello;
Urban, Francesca;
Grillo, Alessandro;
Iemmo, Laura;
Passacantando, Maurizio;
Liu, Xiaowei;
Giubileo, Filippo

Publication type:

Article

Vertical‐Tunneling Field‐Effect Transistor Based on WSe2‐MoS2 Heterostructure with Ion Gel Dielectric.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000091

By:

Jeon, Hyun Bae;
Shin, Gwang Hyuk;
Lee, Khang June;
Choi, Sung‐Yool

Publication type:

Article

Electroformed, Self‐Connected Tin Oxide Nanoparticle Networks for Electronic Reservoir Computing.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000081

By:

Le, Phuong Y.;
Murdoch, Billy J.;
Barlow, Anders J.;
Holland, Anthony S.;
McCulloch, Dougal G.;
McConville, Chris F.;
Partridge, Jim G.

Publication type:

Article

Molecular Signature and Activationless Transport in Cobalt‐Terpyridine‐Based Molecular Junctions.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.201901416

By:

Nguyen, Quyen;
Tefashe, Ushula;
Martin, Pascal;
Della Rocca, Maria Luisa;
Lafolet, Frederic;
Lafarge, Philippe;
McCreery, Richard L.;
Lacroix, Jean‐Christophe

Publication type:

Article

Orthogonal Electric Control of the Out‐Of‐Plane Field‐Effect in 2D Ferroelectric α‐In2Se3.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000061

By:

Li, Yue;
Chen, Chen;
Li, Wei;
Mao, Xiaoyu;
Liu, Heng;
Xiang, Jianyong;
Nie, Anmin;
Liu, Zhongyuan;
Zhu, Wenguang;
Zeng, Hualing

Publication type:

Article

Omnidirectional Stretchable Inorganic‐Material‐Based Electronics with Enhanced Performance.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000058

By:

Kumaresan, Yogeenth;
Kim, Hyeonghun;
Pak, Yusin;
Poola, Praveen Kumar;
Lee, Ryeri;
Lim, Namsoo;
Ko, Heung Cho;
Jung, Gun Young;
Dahiya, Ravinder

Publication type:

Article

The Application of a High‐κ Polymer Dielectric in Graphene Transistors.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000031

By:

Wen, Jiamin;
Yan, Chengyuan;
Sun, Zhenhua

Publication type:

Article

An Experimental Proof that Resistance‐Switching Memory Cells are not Memristors.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000010

By:

Kim, Jinsun;
Pershin, Yuriy V.;
Yin, Ming;
Datta, Timir;
Di Ventra, Massimiliano

Publication type:

Article

Ultrawide Temperature Range with Stable Permittivity and Low Dielectric Loss in (1 − x)[0.90Na0.5Bi0.5TiO3‐0.10BiAlO3]‐xNaNbO3 System.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.201901429

By:

Ren, Pengrong;
Wang, Jiale;
He, Jiaojiao;
Wang, Yike;
Yuan, Hai;
Hao, Yun;
Frömling, Till;
Wan, Yuhui;
Shi, Yonggui;
Zhao, Gaoyang

Publication type:

Article

Graphene Field‐Effect Transistors on Hexagonal‐Boron Nitride for Enhanced Interfacial Thermal Dissipation.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000059

By:

Liu, Donghua;
Chen, Xiaosong;
Zhang, Ying;
Wang, Dingguan;
Zhao, Yan;
Peng, Huisheng;
Liu, Yunqi;
Xu, Xiangfan;
Wee, Andrew Thye Shen;
Wei, Dacheng

Publication type:

Article

Carboxylic Acid‐Functionalized Conjugated Polymer Promoting Diminished Electronic Drift and Amplified Proton Sensitivity of Remote Gates Compared to Nonpolar Surfaces in Aqueous Media.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.201901073

By:

Jang, Hyun‐June;
Wagner, Justine;
Song, Yunjia;
Lee, Taein;
Katz, Howard E.

Publication type:

Article

Exciton Quenching due to Hole Trap Formation in Aged Polymer Light‐Emitting Diodes.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.201700643

By:

Rörich, Irina;
Niu, Quan;
der Zee, Bas;
del Pino Rosendo, Esther;
Crăciun, Nicoleta Irina;
Ramanan, Charusheela;
Blom, Paul W. M.

Publication type:

Article

Works matching IS 2199160X AND DT 2020 AND VI 6 AND IP 7

Low‐Power Computing: Vertical‐Tunneling Field‐Effect Transistor Based on WSe<sub>2</sub>‐MoS<sub>2</sub> Heterostructure with Ion Gel Dielectric (Adv. Electron. Mater. 7/2020).

Molecular Junctions: Molecular Signature and Activationless Transport in Cobalt‐Terpyridine‐Based Molecular Junctions (Adv. Electron. Mater. 7/2020).

Masthead: (Adv. Electron. Mater. 7/2020).

2D Electronics: The Application of a High‐κ Polymer Dielectric in Graphene Transistors (Adv. Electron. Mater. 7/2020).

Electronic Performance of Polymer Carbon‐Paste Nanoallotropes from 0D to 3D as Novel Gate Electrodes in Water‐Gated Organic Field‐Effect Transistors.

Ferroelastic‐Domain‐Assisted Mechanical Switching of Ferroelectric Domains in Pb(Zr,Ti)O<sub>3</sub> Thin Films.

High‐Performance On‐Chip Electron Sources Based on Electroformed Silicon Oxide.

Ultrastretchable, Self‐Healable, and Wearable Epidermal Sensors Based on Ultralong Ag Nanowires Composited Binary‐Networked Hydrogels.

Ion‐Activated Greatly Enhanced Conductivity of Thin Organic Semiconducting Films in Two‐Terminal Devices.

Hybrid Graphene/Carbon Nanofiber Wax Emulsion for Paper‐Based Electronics and Thermal Management.

n‐Type Dirac‐Source Field‐Effect Transistors Based on a Graphene/Carbon Nanotube Heterojunction.

Facile Fabrication of Highly Uniform Tellurium Nanorods for Self‐Powered Flexible Optoelectronics.

High‐Performance Zinc Tin Oxide TFTs with Active Layers Deposited by Atomic Layer Deposition.

Unraveling Structure and Device Operation of Organic Permeable Base Transistors.

Theoretical and Experimental Investigations on the Aggregation‐Enhanced Emission from Dark State: Vibronic Coupling Effect.

In Situ Nitrogen‐Doped Covalent Triazine‐Based Multiporous Cross‐Linking Framework for High‐Performance Energy Storage.

Lateral Electric‐Field‐Controlled Perpendicular Magnetic Anisotropy and Current‐Induced Magnetization Switching in Multiferroic Heterostructures.

Multiple Stimuli Responsive and Identifiable Zwitterionic Ionic Conductive Hydrogel for Bionic Electronic Skin.

Operational Stability Enhancement of Polymeric Organic Field‐Effect Transistors by Amorphous Perfluoropolymers Chemically Anchored to Gate Dielectric Surfaces.

Graphdiyne Ink for Ionic Liquid Gated Printed Transistor.

Skin‐Like Hybrid Integrated Circuits Conformal to Face for Continuous Respiratory Monitoring.

Photoelectrodes with Polydopamine Thin Films Incorporating a Bacterial Photoenzyme.

Probing Coulomb Interactions on Charge Transport in Few‐Layer Organic Crystalline Semiconductors by the Gated van der Pauw Method.

Fabrication and Operating Mechanism of Deep‐UV Transparent Semiconducting SrSnO<sub>3</sub>‐Based Thin Film Transistor.

Field Emission in Ultrathin PdSe<sub>2</sub> Back‐Gated Transistors.

Vertical‐Tunneling Field‐Effect Transistor Based on WSe<sub>2</sub>‐MoS<sub>2</sub> Heterostructure with Ion Gel Dielectric.

Electroformed, Self‐Connected Tin Oxide Nanoparticle Networks for Electronic Reservoir Computing.

Molecular Signature and Activationless Transport in Cobalt‐Terpyridine‐Based Molecular Junctions.

Orthogonal Electric Control of the Out‐Of‐Plane Field‐Effect in 2D Ferroelectric α‐In<sub>2</sub>Se<sub>3</sub>.

Omnidirectional Stretchable Inorganic‐Material‐Based Electronics with Enhanced Performance.

The Application of a High‐κ Polymer Dielectric in Graphene Transistors.

An Experimental Proof that Resistance‐Switching Memory Cells are not Memristors.

Ultrawide Temperature Range with Stable Permittivity and Low Dielectric Loss in (1 − x)[0.90Na<sub>0.5</sub>Bi<sub>0.5</sub>TiO<sub>3</sub>‐0.10BiAlO<sub>3</sub>]‐xNaNbO<sub>3</sub> System.

Graphene Field‐Effect Transistors on Hexagonal‐Boron Nitride for Enhanced Interfacial Thermal Dissipation.

Carboxylic Acid‐Functionalized Conjugated Polymer Promoting Diminished Electronic Drift and Amplified Proton Sensitivity of Remote Gates Compared to Nonpolar Surfaces in Aqueous Media.

Exciton Quenching due to Hole Trap Formation in Aged Polymer Light‐Emitting Diodes.