Works matching IS 2199160X AND DT 2020 AND VI 6 AND IP 7
Results: 36
Molecular Junctions: Molecular Signature and Activationless Transport in Cobalt‐Terpyridine‐Based Molecular Junctions (Adv. Electron. Mater. 7/2020).
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- Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202070033
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Masthead: (Adv. Electron. Mater. 7/2020).
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- Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202070032
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- Article
2D Electronics: The Application of a High‐κ Polymer Dielectric in Graphene Transistors (Adv. Electron. Mater. 7/2020).
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- Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202070031
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Low‐Power Computing: Vertical‐Tunneling Field‐Effect Transistor Based on WSe<sub>2</sub>‐MoS<sub>2</sub> Heterostructure with Ion Gel Dielectric (Adv. Electron. Mater. 7/2020).
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- Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202070030
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Theoretical and Experimental Investigations on the Aggregation‐Enhanced Emission from Dark State: Vibronic Coupling Effect.
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- Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000255
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Ferroelastic‐Domain‐Assisted Mechanical Switching of Ferroelectric Domains in Pb(Zr,Ti)O<sub>3</sub> Thin Films.
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- Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000300
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High‐Performance On‐Chip Electron Sources Based on Electroformed Silicon Oxide.
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- Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000268
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Ultrastretchable, Self‐Healable, and Wearable Epidermal Sensors Based on Ultralong Ag Nanowires Composited Binary‐Networked Hydrogels.
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- Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000267
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n‐Type Dirac‐Source Field‐Effect Transistors Based on a Graphene/Carbon Nanotube Heterojunction.
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- Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000258
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- Article
Electronic Performance of Polymer Carbon‐Paste Nanoallotropes from 0D to 3D as Novel Gate Electrodes in Water‐Gated Organic Field‐Effect Transistors.
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- Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000431
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In Situ Nitrogen‐Doped Covalent Triazine‐Based Multiporous Cross‐Linking Framework for High‐Performance Energy Storage.
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- Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000253
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- Article
Facile Fabrication of Highly Uniform Tellurium Nanorods for Self‐Powered Flexible Optoelectronics.
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- Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000240
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- Article
Multiple Stimuli Responsive and Identifiable Zwitterionic Ionic Conductive Hydrogel for Bionic Electronic Skin.
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- Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000239
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- Article
Ion‐Activated Greatly Enhanced Conductivity of Thin Organic Semiconducting Films in Two‐Terminal Devices.
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- Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000238
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- Article
Hybrid Graphene/Carbon Nanofiber Wax Emulsion for Paper‐Based Electronics and Thermal Management.
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- Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000232
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Unraveling Structure and Device Operation of Organic Permeable Base Transistors.
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- Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000230
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Lateral Electric‐Field‐Controlled Perpendicular Magnetic Anisotropy and Current‐Induced Magnetization Switching in Multiferroic Heterostructures.
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- Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000229
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High‐Performance Zinc Tin Oxide TFTs with Active Layers Deposited by Atomic Layer Deposition.
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- Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000195
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- Article
Operational Stability Enhancement of Polymeric Organic Field‐Effect Transistors by Amorphous Perfluoropolymers Chemically Anchored to Gate Dielectric Surfaces.
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- Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000161
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- Article
Graphdiyne Ink for Ionic Liquid Gated Printed Transistor.
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- Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000157
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- Article
Skin‐Like Hybrid Integrated Circuits Conformal to Face for Continuous Respiratory Monitoring.
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- Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000145
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Photoelectrodes with Polydopamine Thin Films Incorporating a Bacterial Photoenzyme.
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- Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000140
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- Article
Probing Coulomb Interactions on Charge Transport in Few‐Layer Organic Crystalline Semiconductors by the Gated van der Pauw Method.
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- Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000136
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Fabrication and Operating Mechanism of Deep‐UV Transparent Semiconducting SrSnO<sub>3</sub>‐Based Thin Film Transistor.
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- Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000100
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Field Emission in Ultrathin PdSe<sub>2</sub> Back‐Gated Transistors.
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- Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000094
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- Article
Vertical‐Tunneling Field‐Effect Transistor Based on WSe<sub>2</sub>‐MoS<sub>2</sub> Heterostructure with Ion Gel Dielectric.
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- Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000091
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- Publication type:
- Article
Electroformed, Self‐Connected Tin Oxide Nanoparticle Networks for Electronic Reservoir Computing.
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- Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000081
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- Article
Orthogonal Electric Control of the Out‐Of‐Plane Field‐Effect in 2D Ferroelectric α‐In<sub>2</sub>Se<sub>3</sub>.
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- Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000061
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- Article
Graphene Field‐Effect Transistors on Hexagonal‐Boron Nitride for Enhanced Interfacial Thermal Dissipation.
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- Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000059
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Omnidirectional Stretchable Inorganic‐Material‐Based Electronics with Enhanced Performance.
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- Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000058
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- Article
The Application of a High‐κ Polymer Dielectric in Graphene Transistors.
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- Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000031
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- Article
An Experimental Proof that Resistance‐Switching Memory Cells are not Memristors.
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- Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000010
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- Article
Ultrawide Temperature Range with Stable Permittivity and Low Dielectric Loss in (1 − x)[0.90Na<sub>0.5</sub>Bi<sub>0.5</sub>TiO<sub>3</sub>‐0.10BiAlO<sub>3</sub>]‐xNaNbO<sub>3</sub> System.
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- Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.201901429
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- Article
Molecular Signature and Activationless Transport in Cobalt‐Terpyridine‐Based Molecular Junctions.
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- Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.201901416
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- Article
Carboxylic Acid‐Functionalized Conjugated Polymer Promoting Diminished Electronic Drift and Amplified Proton Sensitivity of Remote Gates Compared to Nonpolar Surfaces in Aqueous Media.
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- Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.201901073
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- Article
Exciton Quenching due to Hole Trap Formation in Aged Polymer Light‐Emitting Diodes.
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- Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.201700643
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