Works matching IS 2199160X AND DT 2020 AND VI 6 AND IP 5
Results: 36
Masthead: (Adv. Electron. Mater. 5/2020).
- Published in:
- Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.202070024
- Publication type:
- Article
X‐Ray Diffractive Imaging: Needle‐Like Ferroelastic Domains in Individual Ferroelectric Nanoparticles (Adv. Electron. Mater. 5/2020).
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- Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.202070027
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- Article
2D Semiconductors: Interfacial Band Engineering of MoS<sub>2</sub>/Gold Interfaces Using Pyrimidine‐Containing Self‐Assembled Monolayers: Toward Contact‐Resistance‐Free Bottom‐Contacts (Adv. Electron. Mater. 5/2020).
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- Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.202000110
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- Article
Light‐Emitting Electrochemical Cells: Triethylene Glycol Substituted Diketopyrrolopyrrole‐ and Isoindigo‐Dye Based Donor–Acceptor Copolymers for Organic Light‐Emitting Electrochemical Cells and Transistors (Adv. Electron. Mater. 5/2020)
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- Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.202070025
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- Article
Thin‐Film Transistors: Polyvinyl Alcohol/SiO<sub>2</sub> Hybrid Dielectric for Transparent Flexible/Stretchable All‐Carbon‐Nanotube Thin‐Film‐Transistor Integration (Adv. Electron. Mater. 5/2020).
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- Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901133
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- Article
Hardware‐Based Security: A Combination of a Volatile‐Memristor‐Based True Random‐Number Generator and a Nonlinear‐Feedback Shift Register for High‐Speed Encryption (Adv. Electron. Mater. 5/2020).
- Published in:
- Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.202070022
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- Article
Conduction Response in Highly Flexible Nonvolatile Memory Devices.
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- Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.202000151
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- Article
Interfacial Band Engineering of MoS<sub>2</sub>/Gold Interfaces Using Pyrimidine‐Containing Self‐Assembled Monolayers: Toward Contact‐Resistance‐Free Bottom‐Contacts.
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- Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.202070026
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- Publication type:
- Article
Trap‐Assisted Triplet Emission in Ladder‐Polymer‐Based Light‐Emitting Diodes.
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- Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.202000082
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- Article
Perovskite BiFeO<sub>3</sub>–BaTiO<sub>3</sub> Ferroelectrics: Engineering Properties by Domain Evolution and Thermal Depolarization Modification.
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- Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.202000079
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- Article
Exploiting Flexible Memristors Based on Solution‐Processed Colloidal CuInSe<sub>2</sub> Nanocrystals.
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- Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.202000035
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- Article
Realizing the Capability of Negatively Charged Graphene Oxide in the Presence of Conducting Polyaniline for Performance Enhancement of Tribopositive Material of Triboelectric Nanogenerator.
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- Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.202000034
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- Article
A Memristor with Low Switching Current and Voltage for 1S1R Integration and Array Operation.
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- Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901411
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- Article
Tungsten Dichalcogenide Nanoflake/InGaZnO Thin‐Film Heterojunction for Photodetector, Inverter, and AC Rectifier Circuits.
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- Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.202000026
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- Article
Strong Anisotropy and Piezo‐Phototronic Effect in SnO<sub>2</sub> Microwires.
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- Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901441
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- Article
Achieving Room‐Temperature Charge Density Wave in Transition Metal Dichalcogenide 1T‐VSe<sub>2</sub>.
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- Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901427
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- Article
Significant Performance Improvement of Oxide Thin‐Film Transistors by a Self‐Assembled Monolayer Treatment.
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- Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901421
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- Publication type:
- Article
Triethylene Glycol Substituted Diketopyrrolopyrrole‐ and Isoindigo‐Dye Based Donor–Acceptor Copolymers for Organic Light‐Emitting Electrochemical Cells and Transistors.
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- Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901414
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- Publication type:
- Article
Tunable Current Transport in PdSe<sub>2</sub> via Layer‐by‐Layer Thickness Modulation by Mild Plasma.
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- Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.202000008
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- Article
Programmable Synapse‐Like MoS<sub>2</sub> Field‐Effect Transistors Phase‐Engineered by Dynamic Lithium Ion Modulation.
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- Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901410
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- Article
Dual‐Gated MoS<sub>2</sub> Transistors for Synaptic and Programmable Logic Functions.
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- Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901408
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- Publication type:
- Article
Flexible Poly(Vinyl Alcohol)–Graphene Oxide Hybrid Nanocomposite Based Cognitive Memristor with Pavlovian‐Conditioned Reflex Activities.
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- Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901402
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- Article
External‐Field‐Free Spin Hall Switching of Perpendicular Magnetic Nanopillar with a Dipole‐Coupled Composite Structure.
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- Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901368
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- Publication type:
- Article
Modulation of VO<sub>2</sub> Metal–Insulator Transition by Ferroelectric HfO<sub>2</sub> Gate Insulator.
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- Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901356
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- Article
Sequentially Processed P3HT/CN6‐CP<sup>•−</sup>NBu<sup>4+</sup> Films: Interfacial or Bulk Doping?
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- Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901346
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- Article
Improved Response/Recovery Time and Sensitivity of SnSe Nanosheet Humidity Sensor by LiCl Incorporation.
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- Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901330
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- Article
Needle‐Like Ferroelastic Domains in Individual Ferroelectric Nanoparticles.
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- Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901300
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- Article
Transconductance Amplification in Dirac‐Source Field‐Effect Transistors Enabled by Graphene/Nanotube Hereojunctions.
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- Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901289
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- Article
All‐Solid‐State Organic Schmitt Trigger Implemented by Twin Two‐in‐One Ferroelectric Memory Transistors.
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- Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901263
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- Publication type:
- Article
Anomalous Conductivity Switch Observed in Treated Hafnium Diselenide Transistors.
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- Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901246
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- Article
Antifouling Field‐Effect Transistor Sensing Interface Based on Covalent Organic Frameworks.
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- Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901169
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- Article
Self‐Assembled NiO Nanocrystal Arrays as Memristive Elements.
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- Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901153
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- Publication type:
- Article
Polyvinyl Alcohol/SiO<sub>2</sub> Hybrid Dielectric for Transparent Flexible/Stretchable All‐Carbon‐Nanotube Thin‐Film‐Transistor Integration.
- Published in:
- Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901133
- By:
- Publication type:
- Article
A Combination of a Volatile‐Memristor‐Based True Random‐Number Generator and a Nonlinear‐Feedback Shift Register for High‐Speed Encryption.
- Published in:
- Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901117
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- Publication type:
- Article
Effect of Gate Conductance on Hygroscopic Insulator Organic Field‐Effect Transistors.
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- Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901079
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- Publication type:
- Article
Printed, Low‐Voltage, All‐Organic Transistors and Complementary Circuits on Paper Substrate.
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- Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901027
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- Publication type:
- Article