Works matching IS 2199160X AND DT 2020 AND VI 6 AND IP 5

Results: 36

Hardware‐Based Security: A Combination of a Volatile‐Memristor‐Based True Random‐Number Generator and a Nonlinear‐Feedback Shift Register for High‐Speed Encryption (Adv. Electron. Mater. 5/2020).

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.202070022

By:

Woo, Kyung Seok;
Wang, Yongmin;
Kim, Yumin;
Kim, Jihun;
Kim, Woohyun;
Hwang, Cheol Seong

Publication type:

Article

Thin‐Film Transistors: Polyvinyl Alcohol/SiO2 Hybrid Dielectric for Transparent Flexible/Stretchable All‐Carbon‐Nanotube Thin‐Film‐Transistor Integration (Adv. Electron. Mater. 5/2020).

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901133

By:

Zhang, Ziwei;
Du, Chunhui;
Jiao, Haoxuan;
Zhang, Min

Publication type:

Article

A Memristor with Low Switching Current and Voltage for 1S1R Integration and Array Operation.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901411

By:

Upadhyay, Navnidhi K.;
Sun, Wen;
Lin, Peng;
Joshi, Saumil;
Midya, Rivu;
Zhang, Xumeng;
Wang, Zhongrui;
Jiang, Hao;
Yoon, Jung Ho;
Rao, Mingyi;
Chi, Miaofang;
Xia, Qiangfei;
Yang, J. Joshua

Publication type:

Article

Perovskite BiFeO3–BaTiO3 Ferroelectrics: Engineering Properties by Domain Evolution and Thermal Depolarization Modification.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.202000079

By:

Zheng, Ting;
Wu, Jiagang

Publication type:

Article

External‐Field‐Free Spin Hall Switching of Perpendicular Magnetic Nanopillar with a Dipole‐Coupled Composite Structure.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901368

By:

Zhao, Zhengyang;
Smith, Angeline K.;
Jamali, Mahdi;
Wang, Jian‐Ping

Publication type:

Article

X‐Ray Diffractive Imaging: Needle‐Like Ferroelastic Domains in Individual Ferroelectric Nanoparticles (Adv. Electron. Mater. 5/2020).

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.202070027

By:

Liu, Zhen;
Schold, Elijah;
Karpov, Dmitry;
Harder, Ross;
Lookman, Turab;
Fohtung, Edwin

Publication type:

Article

2D Semiconductors: Interfacial Band Engineering of MoS2/Gold Interfaces Using Pyrimidine‐Containing Self‐Assembled Monolayers: Toward Contact‐Resistance‐Free Bottom‐Contacts (Adv. Electron. Mater. 5/2020).

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.202000110

By:

Matković, Aleksandar;
Petritz, Andreas;
Schider, Gerburg;
Krammer, Markus;
Kratzer, Markus;
Karner‐Petritz, Esther;
Fian, Alexander;
Gold, Herbert;
Gärtner, Michael;
Terfort, Andreas;
Teichert, Christian;
Zojer, Egbert;
Zojer, Karin;
Stadlober, Barbara

Publication type:

Article

Light‐Emitting Electrochemical Cells: Triethylene Glycol Substituted Diketopyrrolopyrrole‐ and Isoindigo‐Dye Based Donor–Acceptor Copolymers for Organic Light‐Emitting Electrochemical Cells and Transistors (Adv. Electron. Mater. 5/2020)

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.202070025

By:

Liu, Qian;
Kanahashi, Kaito;
Matsuki, Keiichiro;
Manzhos, Sergei;
Feron, Krishna;
Bottle, Steven E.;
Tanaka, Kazuhiro;
Nanseki, Tomonori;
Takenobu, Taishi;
Tanaka, Hisaaki;
Sonar, Prashant

Publication type:

Article

Masthead: (Adv. Electron. Mater. 5/2020).

Published in:: Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.202070024
Publication type:: Article

Trap‐Assisted Triplet Emission in Ladder‐Polymer‐Based Light‐Emitting Diodes.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.202000082

By:

Khodabakhshi, Elham;
Ramanan, Charusheela;
Michels, Jasper J.;
Bonus, Sven;
Hertel, Dirk;
Meerholz, Klaus;
Forster, Michael;
Scherf, Ulrich;
Blom, Paul W. M.

Publication type:

Article

Triethylene Glycol Substituted Diketopyrrolopyrrole‐ and Isoindigo‐Dye Based Donor–Acceptor Copolymers for Organic Light‐Emitting Electrochemical Cells and Transistors.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901414

By:

Liu, Qian;
Kanahashi, Kaito;
Matsuki, Keiichiro;
Manzhos, Sergei;
Feron, Krishna;
Bottle, Steven E.;
Tanaka, Kazuhiro;
Nanseki, Tomonori;
Takenobu, Taishi;
Tanaka, Hisaaki;
Sonar, Prashant

Publication type:

Article

Conduction Response in Highly Flexible Nonvolatile Memory Devices.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.202000151

By:

Ren, Shuxia;
Li, Zhenhua;
Tang, Lingzhi;
Su, Xiao;
Zhang, He;
Zhang, Guanglei;
Zhang, Han;
Cao, Guozhong;
Zhao, Jinjin

Publication type:

Article

Interfacial Band Engineering of MoS2/Gold Interfaces Using Pyrimidine‐Containing Self‐Assembled Monolayers: Toward Contact‐Resistance‐Free Bottom‐Contacts.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.202070026

By:

Matković, Aleksandar;
Petritz, Andreas;
Schider, Gerburg;
Krammer, Markus;
Kratzer, Markus;
Karner‐Petritz, Esther;
Fian, Alexander;
Gold, Herbert;
Gärtner, Michael;
Terfort, Andreas;
Teichert, Christian;
Zojer, Egbert;
Zojer, Karin;
Stadlober, Barbara

Publication type:

Article

Achieving Room‐Temperature Charge Density Wave in Transition Metal Dichalcogenide 1T‐VSe2.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901427

By:

Feng, Jiajia;
Susilo, Resta A.;
Lin, Bencheng;
Deng, Wen;
Wang, Yanju;
Li, Bin;
Jiang, Kai;
Chen, Zhiqiang;
Xing, Xiangzhuo;
Shi, Zhixiang;
Wang, Chunlei;
Chen, Bin

Publication type:

Article

Exploiting Flexible Memristors Based on Solution‐Processed Colloidal CuInSe2 Nanocrystals.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.202000035

By:

Guo, Ruiqi;
Zhang, Linxing;
Meng, Jie;
Liu, Aqiang;
Yuan, Jifeng;
Zheng, Kaibo;
Tian, Jianjun

Publication type:

Article

Realizing the Capability of Negatively Charged Graphene Oxide in the Presence of Conducting Polyaniline for Performance Enhancement of Tribopositive Material of Triboelectric Nanogenerator.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.202000034

By:

Ahmad, Rafi u Shan;
Haleem, Abdul;
Haider, Zeeshan;
Claver, Uzabakiriho Pierre;
Fareed, Azam;
Khan, Irfan;
Mbogba, Momoh Karmah;
Memon, Kashan;
Ali, Wajahat;
He, Weidong;
Hu, Peng;
Zhao, Gang

Publication type:

Article

Dual‐Gated MoS2 Transistors for Synaptic and Programmable Logic Functions.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901408

By:

Du, Jian‐yu;
Ge, Chen;
Riahi, Hassen;
Guo, Er‐jia;
He, Meng;
Wang, Can;
Yang, Guo‐zhen;
Jin, Kui‐juan

Publication type:

Article

Tungsten Dichalcogenide Nanoflake/InGaZnO Thin‐Film Heterojunction for Photodetector, Inverter, and AC Rectifier Circuits.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.202000026

By:

Lee, Silah;
Lee, Han Sol;
Yu, Sanghyuck;
Park, Ji Hoon;
Bae, Heesun;
Im, Seongil

Publication type:

Article

Tunable Current Transport in PdSe2 via Layer‐by‐Layer Thickness Modulation by Mild Plasma.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.202000008

By:

Das, Tanmoy;
Seo, Dongwook;
Seo, Jae Eun;
Chang, Jiwon

Publication type:

Article

Strong Anisotropy and Piezo‐Phototronic Effect in SnO2 Microwires.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901441

By:

Li, Ling;
Gao, Wei;
Chen, Hongyu;
Zhao, Kai;
Wen, Peiting;
Yang, Yujue;
Wang, Xingfu;
Wei, Zhongming;
Huo, Nengjie;
Li, Jingbo

Publication type:

Article

Flexible Poly(Vinyl Alcohol)–Graphene Oxide Hybrid Nanocomposite Based Cognitive Memristor with Pavlovian‐Conditioned Reflex Activities.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901402

By:

Xiong, Wen;
Zhu, Li Qiang;
Ye, Cong;
Ren, Zheng Yu;
Yu, Fei;
Xiao, Hui;
Xu, Zhong;
Zhou, Yi;
Zhou, Hao;
Lu, Hong‐Liang

Publication type:

Article

Significant Performance Improvement of Oxide Thin‐Film Transistors by a Self‐Assembled Monolayer Treatment.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901421

By:

Cai, Wensi;
Zhang, Jiawei;
Wilson, Joshua;
Brownless, Joseph;
Park, Seonghyun;
Majewski, Leszek;
Song, Aimin

Publication type:

Article

Modulation of VO2 Metal–Insulator Transition by Ferroelectric HfO2 Gate Insulator.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901356

By:

Yajima, Takeaki;
Nishimura, Tomonori;
Tanaka, Takahisa;
Uchida, Ken;
Toriumi, Akira

Publication type:

Article

Sequentially Processed P3HT/CN6‐CP•−NBu4+ Films: Interfacial or Bulk Doping?

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901346

By:

Karpov, Yevhen;
Kiriy, Nataliya;
Formanek, Petr;
Hoffmann, Cedric;
Beryozkina, Tetyana;
Hambsch, Mike;
Al‐Hussein, Mahmoud;
Mannsfeld, Stefan C. B.;
Büchner, Bernd;
Debnath, Bipasha;
Bretschneider, Michael;
Krupskaya, Yulia;
Lissel, Franziska;
Kiriy, Anton

Publication type:

Article

Programmable Synapse‐Like MoS2 Field‐Effect Transistors Phase‐Engineered by Dynamic Lithium Ion Modulation.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901410

By:

Park, Hyunik;
Kim, Jihyun

Publication type:

Article

Improved Response/Recovery Time and Sensitivity of SnSe Nanosheet Humidity Sensor by LiCl Incorporation.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901330

By:

Zhu, Kaimin;
Tang, Yong;
Zhong, Xiangli;
Xiong, Li;
Zhang, Yong;
Tan, Congbin;
Song, Hongjia;
Wang, Jinbin

Publication type:

Article

Needle‐Like Ferroelastic Domains in Individual Ferroelectric Nanoparticles.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901300

By:

Liu, Zhen;
Schold, Elijah;
Karpov, Dmitry;
Harder, Ross;
Lookman, Turab;
Fohtung, Edwin

Publication type:

Article

Polyvinyl Alcohol/SiO2 Hybrid Dielectric for Transparent Flexible/Stretchable All‐Carbon‐Nanotube Thin‐Film‐Transistor Integration.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901133

By:

Zhang, Ziwei;
Du, Chunhui;
Jiao, Haoxuan;
Zhang, Min

Publication type:

Article

Transconductance Amplification in Dirac‐Source Field‐Effect Transistors Enabled by Graphene/Nanotube Hereojunctions.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901289

By:

Xu, Lin;
Qiu, Chenguang;
Peng, Lian‐Mao;
Zhang, Zhiyong

Publication type:

Article

All‐Solid‐State Organic Schmitt Trigger Implemented by Twin Two‐in‐One Ferroelectric Memory Transistors.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901263

By:

Hwang, Sunbin;
Jang, Sukjae;
Bae, Sukang;
Lee, Seoung‐Ki;
Lee, Sang Hyun;
Fabiano, Simone;
Berggren, Magnus;
Lee, Takhee;
Kim, Tae‐Wook

Publication type:

Article

A Combination of a Volatile‐Memristor‐Based True Random‐Number Generator and a Nonlinear‐Feedback Shift Register for High‐Speed Encryption.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901117

By:

Woo, Kyung Seok;
Wang, Yongmin;
Kim, Yumin;
Kim, Jihun;
Kim, Woohyun;
Hwang, Cheol Seong

Publication type:

Article

Anomalous Conductivity Switch Observed in Treated Hafnium Diselenide Transistors.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901246

By:

Albagami, Malak;
Alrasheed, Abdullah;
Alharbi, Mervat;
Alhazmi, Abrar;
Wong, Kin;
Qasem, Hussam;
Alodan, Sarah;
Alolaiyan, Olaiyan;
Wang, Kang L.;
Amer, Moh. R.

Publication type:

Article

Antifouling Field‐Effect Transistor Sensing Interface Based on Covalent Organic Frameworks.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901169

By:

Yang, Lei;
Jin, Yuqing;
Wang, Xuejun;
Yu, Bin;
Chen, Renzhong;
Zhang, Cong;
Zhao, Yan;
Yu, Yuguo;
Liu, Yunqi;
Wei, Dacheng

Publication type:

Article

Self‐Assembled NiO Nanocrystal Arrays as Memristive Elements.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901153

By:

Kurnia, Fran;
Liu, Chunli;
Raveendra, Nallagatla;
Jung, Chang Uk;
Vasudevan, Rama K.;
Valanoor, Nagarajan

Publication type:

Article

Effect of Gate Conductance on Hygroscopic Insulator Organic Field‐Effect Transistors.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901079

By:

Arthur, Joshua N.;
Chaudhry, Mujeeb Ullah;
Woodruff, Maria A.;
Pandey, Ajay K.;
Yambem, Soniya D.

Publication type:

Article

Printed, Low‐Voltage, All‐Organic Transistors and Complementary Circuits on Paper Substrate.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901027

By:

Casula, Giulia;
Lai, Stefano;
Matino, Laura;
Santoro, Francesca;
Bonfiglio, Annalisa;
Cosseddu, Piero

Publication type:

Article

Works matching IS 2199160X AND DT 2020 AND VI 6 AND IP 5

Hardware‐Based Security: A Combination of a Volatile‐Memristor‐Based True Random‐Number Generator and a Nonlinear‐Feedback Shift Register for High‐Speed Encryption (Adv. Electron. Mater. 5/2020).

Thin‐Film Transistors: Polyvinyl Alcohol/SiO<sub>2</sub> Hybrid Dielectric for Transparent Flexible/Stretchable All‐Carbon‐Nanotube Thin‐Film‐Transistor Integration (Adv. Electron. Mater. 5/2020).

A Memristor with Low Switching Current and Voltage for 1S1R Integration and Array Operation.

Perovskite BiFeO<sub>3</sub>–BaTiO<sub>3</sub> Ferroelectrics: Engineering Properties by Domain Evolution and Thermal Depolarization Modification.

External‐Field‐Free Spin Hall Switching of Perpendicular Magnetic Nanopillar with a Dipole‐Coupled Composite Structure.

X‐Ray Diffractive Imaging: Needle‐Like Ferroelastic Domains in Individual Ferroelectric Nanoparticles (Adv. Electron. Mater. 5/2020).

2D Semiconductors: Interfacial Band Engineering of MoS<sub>2</sub>/Gold Interfaces Using Pyrimidine‐Containing Self‐Assembled Monolayers: Toward Contact‐Resistance‐Free Bottom‐Contacts (Adv. Electron. Mater. 5/2020).

Light‐Emitting Electrochemical Cells: Triethylene Glycol Substituted Diketopyrrolopyrrole‐ and Isoindigo‐Dye Based Donor–Acceptor Copolymers for Organic Light‐Emitting Electrochemical Cells and Transistors (Adv. Electron. Mater. 5/2020)

Masthead: (Adv. Electron. Mater. 5/2020).

Trap‐Assisted Triplet Emission in Ladder‐Polymer‐Based Light‐Emitting Diodes.

Triethylene Glycol Substituted Diketopyrrolopyrrole‐ and Isoindigo‐Dye Based Donor–Acceptor Copolymers for Organic Light‐Emitting Electrochemical Cells and Transistors.

Conduction Response in Highly Flexible Nonvolatile Memory Devices.

Interfacial Band Engineering of MoS<sub>2</sub>/Gold Interfaces Using Pyrimidine‐Containing Self‐Assembled Monolayers: Toward Contact‐Resistance‐Free Bottom‐Contacts.

Achieving Room‐Temperature Charge Density Wave in Transition Metal Dichalcogenide 1T‐VSe<sub>2</sub>.

Exploiting Flexible Memristors Based on Solution‐Processed Colloidal CuInSe<sub>2</sub> Nanocrystals.

Realizing the Capability of Negatively Charged Graphene Oxide in the Presence of Conducting Polyaniline for Performance Enhancement of Tribopositive Material of Triboelectric Nanogenerator.

Dual‐Gated MoS<sub>2</sub> Transistors for Synaptic and Programmable Logic Functions.

Tungsten Dichalcogenide Nanoflake/InGaZnO Thin‐Film Heterojunction for Photodetector, Inverter, and AC Rectifier Circuits.

Tunable Current Transport in PdSe<sub>2</sub> via Layer‐by‐Layer Thickness Modulation by Mild Plasma.

Strong Anisotropy and Piezo‐Phototronic Effect in SnO<sub>2</sub> Microwires.

Flexible Poly(Vinyl Alcohol)–Graphene Oxide Hybrid Nanocomposite Based Cognitive Memristor with Pavlovian‐Conditioned Reflex Activities.

Significant Performance Improvement of Oxide Thin‐Film Transistors by a Self‐Assembled Monolayer Treatment.

Modulation of VO<sub>2</sub> Metal–Insulator Transition by Ferroelectric HfO<sub>2</sub> Gate Insulator.

Sequentially Processed P3HT/CN6‐CP<sup>•−</sup>NBu<sup>4+</sup> Films: Interfacial or Bulk Doping?

Programmable Synapse‐Like MoS<sub>2</sub> Field‐Effect Transistors Phase‐Engineered by Dynamic Lithium Ion Modulation.

Improved Response/Recovery Time and Sensitivity of SnSe Nanosheet Humidity Sensor by LiCl Incorporation.

Needle‐Like Ferroelastic Domains in Individual Ferroelectric Nanoparticles.

Polyvinyl Alcohol/SiO<sub>2</sub> Hybrid Dielectric for Transparent Flexible/Stretchable All‐Carbon‐Nanotube Thin‐Film‐Transistor Integration.

Transconductance Amplification in Dirac‐Source Field‐Effect Transistors Enabled by Graphene/Nanotube Hereojunctions.

All‐Solid‐State Organic Schmitt Trigger Implemented by Twin Two‐in‐One Ferroelectric Memory Transistors.

A Combination of a Volatile‐Memristor‐Based True Random‐Number Generator and a Nonlinear‐Feedback Shift Register for High‐Speed Encryption.

Anomalous Conductivity Switch Observed in Treated Hafnium Diselenide Transistors.

Antifouling Field‐Effect Transistor Sensing Interface Based on Covalent Organic Frameworks.

Self‐Assembled NiO Nanocrystal Arrays as Memristive Elements.

Effect of Gate Conductance on Hygroscopic Insulator Organic Field‐Effect Transistors.

Printed, Low‐Voltage, All‐Organic Transistors and Complementary Circuits on Paper Substrate.