Works matching IS 2199160X AND DT 2020 AND VI 6 AND IP 4

Results: 45

Masthead: (Adv. Electron. Mater. 4/2020).

Published in:: Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.202070019
Publication type:: Article

Ferroelectics: Terahertz Probing Irreversible Phase Transitions Related to Polar Clusters in Bi0.5Na0.5TiO3‐Based Ferroelectric (Adv. Electron. Mater. 4/2020)

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901373

By:

Wu, Jiyue;
Sun, Wenfeng;
Meng, Nan;
Zhang, Hangfeng;
Koval, Vladimir;
Zhang, Yan;
Donnan, Robert;
Yang, Bin;
Zhang, Dou;
Yan, Haixue

Publication type:

Article

Perovskites: Strain–Chemical Gradient and Polarization in Metal Halide Perovskites (Adv. Electron. Mater. 4/2020).

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.202070020

By:

Liu, Yongtao;
Ievlev, Anton V.;
Collins, Liam;
Belianinov, Alex;
Keum, Jong K.;
Ahmadi, Mahshid;
Jesse, Stephen;
Retterer, Scott T.;
Xiao, Kai;
Huang, Jingsong;
Sumpter, Bobby G.;
Kalinin, Sergei V.;
Hu, Bin;
Ovchinnikova, Olga S.

Publication type:

Article

Electrochemical Deposition: Thermoelectric Characterization Platform for Electrochemically Deposited Materials (Adv. Electron. Mater. 4/2020).

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.202070021

By:

Barati, Vida;
Garcia Fernandez, Javier;
Geishendorf, Kevin;
Schnatmann, Lauritz Ule;
Lammel, Michaela;
Kunzmann, Alexander;
Pérez, Nicolás;
Li, Guodong;
Schierning, Gabi;
Nielsch, Kornelius;
Reith, Heiko

Publication type:

Article

Multi‐Level Memory: Multi‐Level Long‐Term Memory Resembling Human Memory Based on Photosensitive Field‐Effect Transistors with Stable Interfacial Deep Traps (Adv. Electron. Mater. 4/2020).

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901044

By:

Kim, Taeyoon;
Lim, Jung Wook;
Yun, Sun Jin;
Lee, Seong Hyun;
Jung, Kwang Hoon

Publication type:

Article

Ferroelectics: Terahertz Probing Irreversible Phase Transitions Related to Polar Clusters in Bi0.5Na0.5TiO3‐Based Ferroelectric (Adv. Electron. Mater. 4/2020).

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901373

By:

Wu, Jiyue;
Sun, Wenfeng;
Meng, Nan;
Zhang, Hangfeng;
Koval, Vladimir;
Zhang, Yan;
Donnan, Robert;
Yang, Bin;
Zhang, Dou;
Yan, Haixue

Publication type:

Article

A Monolayer Leaky Integrate‐and‐Fire Neuron for 2D Memristive Neuromorphic Networks.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901335

By:

Hao, Song;
Ji, Xinglong;
Zhong, Shuai;
Pang, Khin Yin;
Lim, Kian Guan;
Chong, Tow Chong;
Zhao, Rong

Publication type:

Article

Electrically Conductive Tough Gelatin Hydrogel.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.202000040

By:

Liu, Chunlin;
Zhang, Hui Jie;
You, Xiangyu;
Cui, Kunpeng;
Wang, Xuechuan

Publication type:

Article

Molecular Engineering of Cyano‐Substituted Carbazole‐Based Host Materials for Simultaneous Achievement of High Efficiency and Long Lifetime in Blue Phosphorescent Organic Light‐Emitting Diodes.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.202000132

By:

Konidena, Rajendra Kumar;
Chung, Won Jae;
Lee, Jun Yeob

Publication type:

Article

Lateral Gating of 2D Electron Gas in Cross‐Sectional LaAlO3/SrTiO3.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.202000068

By:

Ji, Fan;
Sharma, Pankaj;
Xin, Tongzheng;
Zhang, Dawei;
Liu, Ying;
Niu, Ranming;
Cairney, Julie M.;
Seidel, Jan

Publication type:

Article

Ultralow Electrical Hysteresis along with High Energy‐Storage Density in Lead‐Based Antiferroelectric Ceramics.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901366

By:

Huang, Kaiwei;
Ge, Guanglong;
Yan, Fei;
Shen, Bo;
Zhai, Jiwei

Publication type:

Article

Fully R2R‐Printed Carbon‐Nanotube‐Based Limitless Length of Flexible Active‐Matrix for Electrophoretic Display Application.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901431

By:

Sun, Junfeng;
Sapkota, Ashish;
Park, Hyejin;
Wesley, Prince;
Jung, Younsu;
Maskey, Bijendra Bishow;
Kim, Yushin;
Majima, Yutaka;
Ding, Jianfu;
Ouyang, Jianying;
Guo, Chang;
Lefebvre, Jacques;
Li, Zhao;
Malenfant, Patrick R. L.;
Javey, Ali;
Cho, Gyoujin

Publication type:

Article

Multi‐Functional Hydrogel‐Interlayer RF/NFC Resonators as a Versatile Platform for Passive and Wireless Biosensing.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901311

By:

Dautta, Manik;
Alshetaiwi, Muhannad;
Escobar, Alberto;
Torres, Fredeswinda;
Bernardo, Nathan;
Tseng, Peter

Publication type:

Article

A Self‐Terminated Operation Scheme for High‐Parallel and Energy‐Efficient Forming of RRAM Array.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901324

By:

Feng, Yulin;
Huang, Peng;
Zhang, Yizhou;
Shen, Wensheng;
Xu, Weijie;
Xiang, Yachen;
Ding, Xiangxiang;
Zhao, Yudi;
Gao, Bin;
Wu, Huaqiang;
Qian, He;
Liu, Lifeng;
Liu, Xiaoyan;
Kang, Jinfeng

Publication type:

Article

Scattering Mechanisms and Compositional Optimization of High‐Performance Elemental Te as a Thermoelectric Material.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.202000038

By:

Wu, Yehao;
Zhang, Qi;
Liu, Feng;
Fang, Teng;
Zhu, Tiejun;
Zhao, Xinbing

Publication type:

Article

From Unipolar, WORM‐Type to Ambipolar, Bistable Organic Electret Memory Device by Controlling Minority Lateral Transport.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901320

By:

He, Waner;
Xu, Wenchao;
He, Huixin;
Jing, Xiaosai;
Liu, Chuan;
Feng, Jiajun;
Luo, Chunlai;
Fan, Zhen;
Wu, Sujuan;
Gao, Jinwei;
Zhou, Guofu;
Lu, Xubing;
Liu, Junming

Publication type:

Article

Electrical and Elastic Properties of Individual Single‐Layer Nb4C3Tx MXene Flakes.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901382

By:

Lipatov, Alexey;
Alhabeb, Mohamed;
Lu, Haidong;
Zhao, Shuangshuang;
Loes, Michael J.;
Vorobeva, Nataliia S.;
Dall'Agnese, Yohan;
Gao, Yu;
Gruverman, Alexei;
Gogotsi, Yury;
Sinitskii, Alexander

Publication type:

Article

Tunable Optoelectronic Properties of WS2 by Local Strain Engineering and Folding.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901381

By:

Khan, Ahmed Raza;
Lu, Teng;
Ma, Wendi;
Lu, Yuerui;
Liu, Yun

Publication type:

Article

Terahertz Probing Irreversible Phase Transitions Related to Polar Clusters in Bi0.5Na0.5TiO3‐Based Ferroelectric.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901373

By:

Wu, Jiyue;
Sun, Wenfeng;
Meng, Nan;
Zhang, Hangfeng;
Koval, Vladimir;
Zhang, Yan;
Donnan, Robert;
Yang, Bin;
Zhang, Dou;
Yan, Haixue

Publication type:

Article

Noncuring Graphene Thermal Interface Materials for Advanced Electronics.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901303

By:

Naghibi, Sahar;
Kargar, Fariborz;
Wright, Dylan;
Huang, Chun Yu Tammy;
Mohammadzadeh, Amirmahdi;
Barani, Zahra;
Salgado, Ruben;
Balandin, Alexander A.

Publication type:

Article

Li‐Ion Doping as a Strategy to Modulate the Electrical‐Double‐Layer for Improved Memory and Learning Behavior of Synapse Transistor Based on Fully Aqueous‐Solution‐Processed In2O3/AlLiO Film.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901363

By:

Li, Jun;
Jiang, Dongliang;
Yang, Yaohua;
Zhou, Youhang;
Chen, Qi;
Zhang, Jianhua

Publication type:

Article

Indium–Gallium–Zinc Oxide Schottky Diodes Operating across the Glass Transition of Stimuli‐Responsive Polymers.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901210

By:

Guerrero, Edgar;
Polednik, Alexander;
Ecker, Melanie;
Joshi‐Imre, Alexandra;
Choi, Wooyeol;
Gutierrez‐Heredia, Gerardo;
Voit, Walter E.;
Maeng, Jimin

Publication type:

Article

Electroforming‐Free Artificial Synapses Based on Proton Conduction in α‐MoO3 Films.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901290

By:

Wang, Zhe;
Yang, Rui;
Huang, He‐Ming;
He, Hui‐Kai;
Shaibo, Jamal;
Guo, Xin

Publication type:

Article

Thermoelectric Characterization Platform for Electrochemically Deposited Materials.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901288

By:

Barati, Vida;
Garcia Fernandez, Javier;
Geishendorf, Kevin;
Schnatmann, Lauritz Ule;
Lammel, Michaela;
Kunzmann, Alexander;
Pérez, Nicolás;
Li, Guodong;
Schierning, Gabi;
Nielsch, Kornelius;
Reith, Heiko

Publication type:

Article

Fine Synthesis of Longitudinal/Horizontal‐Growth Organic Heterostructures for the Optical Logic Gates.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901268

By:

Tao, Yi‐Chen;
Wang, Xue‐Dong;
Li, Zhi‐Zhou;
Zhuo, Ming‐Peng;
Yu, Yue;
Yan, Chang‐Cun;
Xie, Wan‐Feng;
Liao, Liang‐Sheng

Publication type:

Article

Ultrasensitive Multilayer MoS2‐Based Photodetector with Permanently Grounded Gate Effect.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901256

By:

Naqi, Muhammad;
Kaniselvan, Manasa;
Choo, Sooho;
Han, Gyuchull;
Kang, Sangjin;
Kim, Jeonghun;
Yoon, Youngki;
Kim, Sunkook

Publication type:

Article

High Visible‐Light‐Stimulated Plasticity in Optoelectronic Synaptic Transistors for Irradiation History‐Dependent Learning.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901255

By:

Wu, Mingze;
Shang, Shangyang;
Wei, Qi;
Liu, Chang;
Li, Aidong;
Gao, Xu;
Wang, Suidong;
Yin, Jiang;
Xia, Yidong;
Liu, Zhiguo

Publication type:

Article

A Silicon Nanowire Ferroelectric Field‐Effect Transistor.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901244

By:

Sessi, Violetta;
Simon, Maik;
Mulaosmanovic, Halid;
Pohl, Darius;
Loeffler, Markus;
Mauersberger, Tom;
Fengler, Franz P. G.;
Mittmann, Terence;
Richter, Claudia;
Slesazeck, Stefan;
Mikolajick, Thomas;
Weber, Walter M.

Publication type:

Article

Defect and Dopant Mediated Thermoelectric Power Factor Tuning in β‐Zn4Sb3.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901284

By:

Karthikeyan, Vaithinathan;
Li, Tan;
Medasani, Bharat;
Luo, Caiqin;
Shi, Dongliang;
Wong, Joseph C. K.;
Lam, Kwok‐Ho;
Ling, Francis C. C.;
Roy, Vellaisamy A. L.

Publication type:

Article

Activity of Sub‐Band Gap States in Ferroelectric Pb(Zr0.2Ti0.8)O3 Thin Films.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201900966

By:

Ramakrishnegowda, Niranjan;
Yun, Yeseul;
Knoche, David S.;
Mühlenbein, Lutz;
Li, Xinye;
Bhatnagar, Akash

Publication type:

Article

Effect of Backbone Fluorine and Chlorine Substitution on Charge‐Transport Properties of Naphthalenediimide‐Based Polymer Semiconductors.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901241

By:

Wei, Huan;
Liu, Yu;
Liu, Zhiqiang;
Guo, Jing;
Chen, Ping‐An;
Qiu, Xincan;
Dai, Gaole;
Li, Yuxiang;
Yuan, Jianyu;
Liao, Lei;
Hu, Yuanyuan

Publication type:

Article

A Novel Biomimetic Magnetosensor Based on Magneto‐Optically Involved Conformational Variation of MagR/Cry4 Complex.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901168

By:

Xue, Le;
Hu, Tao;
Guo, Zhen;
Yang, Celi;
Wang, Zhuoqing;
Qin, Siying;
Yang, Peilin;
Xie, Can;
Xu, Jian;
Li, Nuan;
Shen, Yanfei;
Jiang, Hui;
Deng, Dawei;
Gu, Ning;
Sun, Jianfei

Publication type:

Article

All‐Rounder Low‐Cost Dopant‐Free D‐A‐D Hole‐Transporting Materials for Efficient Indoor and Outdoor Performance of Perovskite Solar Cells.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201900884

By:

Pham, Hong Duc;
Jain, Sagar M.;
Li, Meng;
Wang, Zhao‐Kui;
Manzhos, Sergei;
Feron, Krishna;
Pitchaimuthu, Sudhagar;
Liu, Zhiyong;
Motta, Nunzio;
Durrant, James R.;
Sonar, Prashant

Publication type:

Article

Enhanced Performance of Organic Field‐Effect Transistor Memory by Hole‐Barrier Modulation with an N‐Type Organic Buffer Layer between Pentacene and Polymer Electret.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901184

By:

Wang, Yiru;
Lu, Chao;
Kang, Limin;
Shang, Shangyang;
Yin, Jiang;
Gao, Xu;
Yuan, Guoliang;
Xia, Yidong;
Liu, Zhiguo

Publication type:

Article

Strain–Chemical Gradient and Polarization in Metal Halide Perovskites.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901235

By:

Liu, Yongtao;
Ievlev, Anton V.;
Collins, Liam;
Belianinov, Alex;
Keum, Jong K.;
Ahmadi, Mahshid;
Jesse, Stephen;
Retterer, Scott T.;
Xiao, Kai;
Huang, Jingsong;
Sumpter, Bobby G.;
Kalinin, Sergei V.;
Hu, Bin;
Ovchinnikova, Olga S.

Publication type:

Article

Unconventional Ferroelectric Switching via Local Domain Wall Motion in Multiferroic ε‐Fe2O3 Films.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901134

By:

Guan, Xiangxiang;
Yao, Lide;
Rushchanskii, Konstantin Z.;
Inkinen, Sampo;
Yu, Richeng;
Ležaić, Marjana;
Sánchez, Florencio;
Gich, Martí;
Dijken, Sebastiaan

Publication type:

Article

Topotactic Phase Transformation in Epitaxial SrCo1‐xFexO3−δ Thin Films.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901204

By:

Nguyen, Hien Thi Dieu;
Granville, Simon;
Seidel, Jan

Publication type:

Article

Films Stoichiometry Effects on the Electronic Transport Properties of Solution‐Processed Yttrium Doped Indium–Zinc Oxide Crystalline Semiconductors for Thin Film Transistor Applications.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201900976

By:

Afouxenidis, Dimitrios;
Halcovitch, Nathan R.;
Milne, William I.;
Nathan, Arokia;
Adamopoulos, George

Publication type:

Article

Vertical‐Resolved Composition and Aggregation Gradient of Conjugated‐Polymer@Insulator‐Matrix for Transistors and Memory.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901156

By:

Wei, Peng;
Li, Xianglong;
Wang, Lei;
Liu, Nannan;
He, Shi;
Ren, Yurong;
Zhu, Yuanwei;
Yang, Yaodong;
Lu, Guanghao;
Bu, Laju

Publication type:

Article

Modulation of Synaptic Plasticity Mimicked in Al Nanoparticle‐Embedded IGZO Synaptic Transistor.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901072

By:

Kim, Jeehoon;
Kim, Younghun;
Kwon, Ojun;
Kim, Taehyeon;
Oh, Seyoung;
Jin, Soeun;
Park, Woojin;
Kwon, Jung‐Dae;
Hong, Seung‐Woo;
Lee, Chang‐Sik;
Ryu, Ho‐Yong;
Hong, Seoksu;
Kim, Jaehoon;
Heo, Tae‐Young;
Cho, Byungjin

Publication type:

Article

Programmable Spin–Orbit‐Torque Logic Device with Integrated Bipolar Bias Field for Chirality Control.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901090

By:

Lim, Gerard Joseph;
Chua, Daniel;
Gan, Weiliang;
Murapaka, Chandrasekhar;
Lew, Wen Siang

Publication type:

Article

The Role of Tie Chains on the Mechano‐Electrical Properties of Semiconducting Polymer Films.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901070

By:

Gu, Kaichen;
Onorato, Jonathan W.;
Luscombe, Christine K.;
Loo, Yueh‐Lin

Publication type:

Article

Metal–Semiconductor Field‐Effect Transistors Based on the Amorphous Multi‐Anion Compound ZnON.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901066

By:

Reinhardt, Anna;
Wenckstern, Holger;
Grundmann, Marius

Publication type:

Article

Multi‐Level Long‐Term Memory Resembling Human Memory Based on Photosensitive Field‐Effect Transistors with Stable Interfacial Deep Traps.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901044

By:

Kim, Taeyoon;
Lim, Jung Wook;
Yun, Sun Jin;
Lee, Seong Hyun;
Jung, Kwang Hoon

Publication type:

Article

Nanoribbon‐Based Flexible High‐Performance Transistors Fabricated at Room Temperature.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901023

By:

Zumeit, Ayoub;
Navaraj, William Taube;
Shakthivel, Dhayalan;
Dahiya, Ravinder

Publication type:

Article