Works matching IS 2199160X AND DT 2020 AND VI 6 AND IP 2

Results: 42

Ferroelectrics: Intrinsic Dipole Coupling in 2D van der Waals Ferroelectrics for Gate‐Controlled Switchable Rectifier (Adv. Electron. Mater. 2/2020).

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.202070011

By:

Dai, Mingjin;
Li, Kai;
Wang, Fakun;
Hu, Yunxia;
Zhang, Jia;
Zhai, Tianyou;
Yang, Bin;
Fu, Yongqing;
Cao, Wenwu;
Jia, Dechang;
Zhou, Yu;
Hu, PingAn

Publication type:

Article

Topological Electronics: Signatures of a Charge Density Wave Phase and the Chiral Anomaly in the Fermionic Material Cobalt Monosilicide CoSi (Adv. Electron. Mater. 2/2020).

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.202070010

By:

Schnatmann, Lauritz;
Geishendorf, Kevin;
Lammel, Michaela;
Damm, Christine;
Novikov, Sergey;
Thomas, Andy;
Burkov, Alexander;
Reith, Heiko;
Nielsch, Kornelius;
Schierning, Gabi

Publication type:

Article

Artificial Synapses: Selective UV‐Gating Organic Memtransistors with Modulable Levels of Synaptic Plasticity (Adv. Electron. Mater. 2/2020).

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.202070009

By:

Zhong, Ya‐Nan;
Gao, Xu;
Xu, Jian‐Long;
Sirringhaus, Henning;
Wang, Sui‐Dong

Publication type:

Article

Artificial Synapses: Near‐Infrared‐Irradiation‐Mediated Synaptic Behavior from Tunable Charge‐Trapping Dynamics (Adv. Electron. Mater. 2/2020).

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.202070007

By:

Wang, Yan;
Yang, Jing;
Ye, Wenbin;
She, Donghong;
Chen, Jinrui;
Lv, Ziyu;
Roy, Vellaisamy A. L.;
Li, Huilin;
Zhou, Kui;
Yang, Qing;
Zhou, Ye;
Han, Su‐Ting

Publication type:

Article

Masthead: (Adv. Electron. Mater. 2/2020).

Published in:: Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.202070008
Publication type:: Article

Wearable Electronics: Multifunctional Ultrastretchable Printed Soft Electronic Devices for Wearable Applications (Adv. Electron. Mater. 2/2020).

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.202070006

By:

Tian, Bin;
Liu, Qun;
Luo, Chengsheng;
Feng, Yu;
Wu, Wei

Publication type:

Article

Large‐Area Fabrication of High‐Performance Flexible and Wearable Pressure Sensors.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901310

By:

Wu, Xiaodong;
Khan, Yasser;
Ting, Jonathan;
Zhu, Juan;
Ono, Seiya;
Zhang, Xinxing;
Du, Shixuan;
Evans, James W.;
Lu, Canhui;
Arias, Ana C.

Publication type:

Article

Printed Flexible Organic Transistors with Tunable Aspect Ratios.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901207

By:

Sadeghi, Mahsa;
Delparastan, Peyman;
Pierre, Adrien;
Arias, Ana Claudia

Publication type:

Article

Realizing Excellent Thermoelectric Performance of Sb2Te3 Based Segmented Leg with a Wide Temperature Range Using One‐Step Sintering.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901178

By:

Xie, Liangjun;
Qin, Haixu;
Zhu, Jianbo;
Yin, Li;
Qin, Dandan;
Guo, Fengkai;
Cai, Wei;
Zhang, Qian;
Sui, Jiehe

Publication type:

Article

Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901171

By:

Giannazzo, Filippo;
Greco, Giuseppe;
Di Franco, Salvatore;
Fiorenza, Patrick;
Deretzis, Ioannis;
La Magna, Antonino;
Bongiorno, Corrado;
Zimbone, Massimo;
La Via, Francesco;
Zielinski, Marcin;
Roccaforte, Fabrizio

Publication type:

Article

Graphene Electromechanical Water Sensor: The Wetristor.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901167

By:

Meireles, Leonel M.;
Neto, Eliel G. S.;
Ferrari, Gustavo A.;
Neves, Paulo A. A.;
Gadelha, Andreij C.;
Silvestre, Ive;
Taniguchi, Takashi;
Watanabe, Kenji;
Chacham, Helio;
Neves, Bernardo R. A.;
Campos, Leonardo C.;
Lacerda, Rodrigo G.

Publication type:

Article

Mixed Molecular Electronics: Tunneling Behaviors and Applications of Mixed Self‐Assembled Monolayers.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901157

By:

Kong, Gyu Don;
Byeon, Seo Eun;
Park, Sohyun;
Song, Hyunsun;
Kim, Seo‐Yeon;
Yoon, Hyo Jae

Publication type:

Article

Graphene/Au Hybrid Antenna Coil Exfoliated with Multi‐Stacked Graphene Flakes for Ultra‐Thin Biomedical Devices.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901143

By:

Tetsu, Yuma;
Kido, Yusuke;
Hao, Meiting;
Takeoka, Shinji;
Maruyama, Takeshi;
Fujie, Toshinori

Publication type:

Article

Synergistic Regulation of Phonon and Electronic Properties to Improve the Thermoelectric Performance of Chalcogenide CuIn1−xGaxTe2:yInTe (x = 0–0.3) with In Situ Formed Nanoscale Phase InTe.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901141

By:

Li, Min;
Luo, Yong;
Hu, Xiaojuan;
Cai, Gemei;
Han, Zhongkang;
Du, Zhengliang;
Cui, Jiaolin

Publication type:

Article

Energy‐Efficient Ultrafast SOT‐MRAMs Based on Low‐Resistivity Spin Hall Metal Au0.25Pt0.75.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901131

By:

Zhu, Lijun;
Zhu, Lujun;
Shi, Shengjie;
Ralph, Daniel C.;
Buhrman, Robert A.

Publication type:

Article

2D Layered Materials for Memristive and Neuromorphic Applications.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901107

By:

Wang, Chen‐Yu;
Wang, Cong;
Meng, Fanhao;
Wang, Pengfei;
Wang, Shuang;
Liang, Shi‐Jun;
Miao, Feng

Publication type:

Article

Controlled Ionic Tunneling in Lithium Nanoionic Synaptic Transistor through Atomically Thin Graphene Layer for Neuromorphic Computing.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901100

By:

Nikam, Revannath Dnyandeo;
Kwak, Myonghoon;
Lee, Jongwon;
Rajput, Krishn Gopal;
Hwang, Hyunsang

Publication type:

Article

Colossal Tunneling Electroresistance in Co‐Planar Polymer Ferroelectric Tunnel Junctions.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901091

By:

Kumar, Manasvi;
Georgiadou, Dimitra G.;
Seitkhan, Akmaral;
Loganathan, Kalaivanan;
Yengel, Emre;
Faber, Hendrik;
Naphade, Dipti;
Basu, Aniruddha;
Anthopoulos, Thomas D.;
Asadi, Kamal

Publication type:

Article

Selective UV‐Gating Organic Memtransistors with Modulable Levels of Synaptic Plasticity.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.202070009

By:

Zhong, Ya‐Nan;
Gao, Xu;
Xu, Jian‐Long;
Sirringhaus, Henning;
Wang, Sui‐Dong

Publication type:

Article

Intrinsic Dipole Coupling in 2D van der Waals Ferroelectrics for Gate‐Controlled Switchable Rectifier.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201900975

By:

Dai, Mingjin;
Li, Kai;
Wang, Fakun;
Hu, Yunxia;
Zhang, Jia;
Zhai, Tianyou;
Yang, Bin;
Fu, Yongqing;
Cao, Wenwu;
Jia, Dechang;
Zhou, Yu;
Hu, PingAn

Publication type:

Article

Nonvolatile Electric Control of the Anomalous Hall Effect in an Ultrathin Magnetic Metal.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901084

By:

Feng, Zexin;
Yan, Han;
Wang, Xiaoning;
Guo, Huixin;
Qin, Peixin;
Zhou, Xiaorong;
Chen, Zuhuang;
Wang, Hui;
Jiao, Zhengying;
Leng, Zhaoguogang;
Hu, Zexiang;
Zhang, Xin;
Wu, Haojiang;
Chen, Hongyu;
Wang, Jingmin;
Zhang, Tianli;
Jiang, Chengbao;
Liu, Zhiqi

Publication type:

Article

Highly Sensitive and Stretchable Carbon Nanotube/Fluoroelastomer Nanocomposite with a Double‐Percolated Network for Wearable Electronics.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901067

By:

Shajari, Shaghayegh;
Mahmoodi, Mehdi;
Rajabian, Mahmoud;
Karan, Kunal;
Sundararaj, Uttandaraman;
Sudak, Les Jozef

Publication type:

Article

Reversible Tuning of Magnetization in a Ferromagnetic Ruddlesden–Popper‐Type Manganite by Electrochemical Fluoride‐Ion Intercalation.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201900974

By:

Vasala, Sami;
Jakob, Anna;
Wissel, Kerstin;
Waidha, Aamir Iqbal;
Alff, Lambert;
Clemens, Oliver

Publication type:

Article

Direct Observation of Stable Negative Capacitance in SrTiO3@BaTiO3 Heterostructure.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901005

By:

Wang, Zhongyang;
Li, Hongyu;
Hu, Huiying;
Fan, Yuqi;
Fan, Runhua;
Li, Baowen;
Zhang, Jiaoxia;
Liu, Hu;
Fan, Jincheng;
Hou, Hua;
Dang, Feng;
Kou, Zongkui;
Guo, Zhanhu

Publication type:

Article

High‐Performance Polycrystalline Silicon Thin‐Film Transistors without Source/Drain Doping by Utilizing Anisotropic Conductivity of Bridged‐Grain Lines.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201900961

By:

Zhang, Meng;
Lin, Haotao;
Deng, Sunbin;
Chen, Rongsheng;
Li, Guijun;
Han, Su‐Ting;
Zhou, Ye;
Yan, Yan;
Zhou, Wei;
Wong, Man;
Kwok, Hoi‐Sing

Publication type:

Article

Hollow MXene Sphere/Reduced Graphene Aerogel Composites for Piezoresistive Sensor with Ultra‐High Sensitivity.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901064

By:

Zhu, Meng;
Yue, Yang;
Cheng, Yongfa;
Zhang, Yanan;
Su, Jun;
Long, Fei;
Jiang, Xueliang;
Ma, Yanan;
Gao, Yihua

Publication type:

Article

Controllable and Stable Quantized Conductance States in a Pt/HfOx/ITO Memristor.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901055

By:

Xue, Wuhong;
Li, Yi;
Liu, Gang;
Wang, Zhuorui;
Xiao, Wen;
Jiang, Kemin;
Zhong, Zhicheng;
Gao, Shuang;
Ding, Jun;
Miao, Xiangshui;
Xu, Xiao‐Hong;
Li, Run‐Wei

Publication type:

Article

Designing High‐Performance Storage in HfO2/BiFeO3 Memristor for Artificial Synapse Applications.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901012

By:

Liu, Lei;
Xiong, Wen;
Liu, Yanxin;
Chen, Kaige;
Xu, Zhong;
Zhou, Yi;
Han, Jia;
Ye, Cong;
Chen, Xin;
Song, Zhitang;
Zhu, Min

Publication type:

Article

2D Resistive Switching Based on Amorphous Zinc–Tin Oxide Schottky Diodes.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201900958

By:

Casa Branca, Nuno;
Deuermeier, Jonas;
Martins, Jorge;
Carlos, Emanuel;
Pereira, Maria;
Martins, Rodrigo;
Fortunato, Elvira;
Kiazadeh, Asal

Publication type:

Article

Spin‐Orbit Torque Driven Magnetization Switching and Precession by Manipulating Thickness of CoFeB/W Heterostructures.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901004

By:

Kim, Changsoo;
Chun, Byong Sun;
Yoon, Jungbum;
Kim, Dongseuk;
Kim, Yong Jin;
Cha, In Ho;
Kim, Gyu Won;
Kim, Dae Hyun;
Moon, Kyoung‐Woong;
Kim, Young Keun;
Hwang, Chanyong

Publication type:

Article

Electric‐Field‐Assisted Enhanced Electron Transfer to Boost Supercapacitor Negative Electrode Performance for a Fabricated Fe7S8/α‐FeOOH Nano‐Heterostructure.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201900953

By:

Zhang, Dongbin;
Kong, Xianggui;
Zhang, Fazhi;
Lei, Xiaodong

Publication type:

Article

Lead‐Free Bi0.5(Na0.78K0.22)TiO3 Nanoparticle Filler–Elastomeric Composite Films for Paper‐Based Flexible Power Generators.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201900950

By:

Won, Sung Sik;
Kawahara, Masami;
Ahn, Chang Won;
Lee, Joonhee;
Lee, Jinkee;
Jeong, Chang Kyu;
Kingon, Angus I.;
Kim, Seung‐Hyun

Publication type:

Article

Multifunctional Ultrastretchable Printed Soft Electronic Devices for Wearable Applications.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201900922

By:

Tian, Bin;
Liu, Qun;
Luo, Chengsheng;
Feng, Yu;
Wu, Wei

Publication type:

Article

Understanding the Crystallographic Phase Relations in Alkali‐Trihalogeno‐Germanates in Terms of Ferroelectric or Antiferroelectric Arrangements of the Tetrahedral GeX3 Units.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201900887

By:

Radha, Santosh Kumar;
Lambrecht, Walter R. L.

Publication type:

Article

An Artificial Optoelectronic Synapse Based on a Photoelectric Memcapacitor.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201900858

By:

Zhao, Lei;
Fan, Zhen;
Cheng, Shengliang;
Hong, Lanqing;
Li, Yongqiang;
Tian, Guo;
Chen, Deyang;
Hou, Zhipeng;
Qin, Minghui;
Zeng, Min;
Lu, Xubing;
Zhou, Guofu;
Gao, Xingsen;
Liu, Jun‐Ming

Publication type:

Article

Routes for Efficiency Enhancement in Fluorescent TADF Exciplex Host OLEDs Gained from an Electro‐Optical Device Model.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201900804

By:

Regnat, Markus;
Pernstich, Kurt P.;
Kim, Kwon‐Hyeon;
Kim, Jang‐Joo;
Nüesch, Frank;
Ruhstaller, Beat

Publication type:

Article

Multifield‐Inspired Tunable Carrier Effects Based on Ferroelectric‐Silicon PN Heterojunction.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201900795

By:

Lou, Jing;
Ma, Hua;
Wang, Jun;
Yang, Ruisheng;
Dong, Bowen;
Yu, Ying;
Wang, Jiafu;
Zhang, Fuli;
Fan, Yuancheng;
Feng, Mingde;
Li, Zhiqiang;
Nan, Cewen;
Qu, Shaobo

Publication type:

Article

Near‐Infrared‐Irradiation‐Mediated Synaptic Behavior from Tunable Charge‐Trapping Dynamics.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201900765

By:

Wang, Yan;
Yang, Jing;
Ye, Wenbin;
She, Donghong;
Chen, Jinrui;
Lv, Ziyu;
Roy, Vellaisamy A. L.;
Li, Huilin;
Zhou, Kui;
Yang, Qing;
Zhou, Ye;
Han, Su‐Ting

Publication type:

Article

Signatures of a Charge Density Wave Phase and the Chiral Anomaly in the Fermionic Material Cobalt Monosilicide CoSi.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201900857

By:

Schnatmann, Lauritz;
Geishendorf, Kevin;
Lammel, Michaela;
Damm, Christine;
Novikov, Sergey;
Thomas, Andy;
Burkov, Alexander;
Reith, Heiko;
Nielsch, Kornelius;
Schierning, Gabi

Publication type:

Article

Universal Scaling Law for the Size Effect on Superelasticity at the Nanoscale Promotes the Use of Shape‐Memory Alloys in Stretchable Devices.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201900741

By:

Fuster, Valeria;
Gómez‐Cortés, José F.;
Nó, María L.;
San Juan, Jose M.

Publication type:

Article

Conformal Cu Coating on Electrospun Nanofibers for 3D Electro‐Conductive Networks.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201900767

By:

Jiang, Fuze;
Ju, Wenbo;
Pan, Zhengyuan;
Lin, Luchan;
Yue, Yang;
Zhao, Yi‐Bo;
Li, Congju;
Clemens, Frank;
Battaglia, Corsin;
Wang, Jing

Publication type:

Article

Bromine Vacancy Redistribution and Metallic‐Ion‐Migration‐Induced Air‐Stable Resistive Switching Behavior in All‐Inorganic Perovskite CsPbBr3 Film‐Based Memory Device.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201900754

By:

Zhu, Yuanyuan;
Cheng, Pengwei;
Shi, Jing;
Wang, Hongjun;
Liu, Yong;
Xiong, Rui;
Ma, Hongyu;
Ma, Hongxiang

Publication type:

Article