Works matching IS 2199160X AND DT 2020 AND VI 6 AND IP 2
Results: 42
Ferroelectrics: Intrinsic Dipole Coupling in 2D van der Waals Ferroelectrics for Gate‐Controlled Switchable Rectifier (Adv. Electron. Mater. 2/2020).
- Published in:
- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.202070011
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- Article
Topological Electronics: Signatures of a Charge Density Wave Phase and the Chiral Anomaly in the Fermionic Material Cobalt Monosilicide CoSi (Adv. Electron. Mater. 2/2020).
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.202070010
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- Article
Artificial Synapses: Selective UV‐Gating Organic Memtransistors with Modulable Levels of Synaptic Plasticity (Adv. Electron. Mater. 2/2020).
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.202070009
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Masthead: (Adv. Electron. Mater. 2/2020).
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.202070008
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- Article
Artificial Synapses: Near‐Infrared‐Irradiation‐Mediated Synaptic Behavior from Tunable Charge‐Trapping Dynamics (Adv. Electron. Mater. 2/2020).
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.202070007
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- Article
Wearable Electronics: Multifunctional Ultrastretchable Printed Soft Electronic Devices for Wearable Applications (Adv. Electron. Mater. 2/2020).
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.202070006
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Large‐Area Fabrication of High‐Performance Flexible and Wearable Pressure Sensors.
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901310
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Printed Flexible Organic Transistors with Tunable Aspect Ratios.
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901207
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- Article
Realizing Excellent Thermoelectric Performance of Sb<sub>2</sub>Te<sub>3</sub> Based Segmented Leg with a Wide Temperature Range Using One‐Step Sintering.
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901178
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- Article
Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy.
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901171
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- Article
Graphene Electromechanical Water Sensor: The Wetristor.
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901167
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- Article
Mixed Molecular Electronics: Tunneling Behaviors and Applications of Mixed Self‐Assembled Monolayers.
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901157
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- Article
Graphene/Au Hybrid Antenna Coil Exfoliated with Multi‐Stacked Graphene Flakes for Ultra‐Thin Biomedical Devices.
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901143
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- Article
Synergistic Regulation of Phonon and Electronic Properties to Improve the Thermoelectric Performance of Chalcogenide CuIn<sub>1−</sub><sub>x</sub>Ga<sub>x</sub>Te<sub>2</sub>:yInTe (x = 0–0.3) with In Situ Formed Nanoscale Phase InTe.
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901141
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- Article
Energy‐Efficient Ultrafast SOT‐MRAMs Based on Low‐Resistivity Spin Hall Metal Au<sub>0.25</sub>Pt<sub>0.75</sub>.
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901131
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- Article
2D Layered Materials for Memristive and Neuromorphic Applications.
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901107
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- Article
Controlled Ionic Tunneling in Lithium Nanoionic Synaptic Transistor through Atomically Thin Graphene Layer for Neuromorphic Computing.
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901100
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- Article
Colossal Tunneling Electroresistance in Co‐Planar Polymer Ferroelectric Tunnel Junctions.
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901091
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- Article
Nonvolatile Electric Control of the Anomalous Hall Effect in an Ultrathin Magnetic Metal.
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901084
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- Article
Highly Sensitive and Stretchable Carbon Nanotube/Fluoroelastomer Nanocomposite with a Double‐Percolated Network for Wearable Electronics.
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901067
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- Article
Hollow MXene Sphere/Reduced Graphene Aerogel Composites for Piezoresistive Sensor with Ultra‐High Sensitivity.
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901064
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- Article
Controllable and Stable Quantized Conductance States in a Pt/HfO<sub>x</sub>/ITO Memristor.
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901055
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- Article
Designing High‐Performance Storage in HfO<sub>2</sub>/BiFeO<sub>3</sub> Memristor for Artificial Synapse Applications.
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901012
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- Article
Direct Observation of Stable Negative Capacitance in SrTiO<sub>3</sub>@BaTiO<sub>3</sub> Heterostructure.
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901005
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- Article
Spin‐Orbit Torque Driven Magnetization Switching and Precession by Manipulating Thickness of CoFeB/W Heterostructures.
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901004
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- Article
Intrinsic Dipole Coupling in 2D van der Waals Ferroelectrics for Gate‐Controlled Switchable Rectifier.
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201900975
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- Article
Reversible Tuning of Magnetization in a Ferromagnetic Ruddlesden–Popper‐Type Manganite by Electrochemical Fluoride‐Ion Intercalation.
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201900974
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- Article
High‐Performance Polycrystalline Silicon Thin‐Film Transistors without Source/Drain Doping by Utilizing Anisotropic Conductivity of Bridged‐Grain Lines.
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201900961
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- Article
2D Resistive Switching Based on Amorphous Zinc–Tin Oxide Schottky Diodes.
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201900958
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- Article
Selective UV‐Gating Organic Memtransistors with Modulable Levels of Synaptic Plasticity.
- Published in:
- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.202070009
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- Publication type:
- Article
Electric‐Field‐Assisted Enhanced Electron Transfer to Boost Supercapacitor Negative Electrode Performance for a Fabricated Fe<sub>7</sub>S<sub>8</sub>/α‐FeOOH Nano‐Heterostructure.
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201900953
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- Article
Lead‐Free Bi<sub>0.5</sub>(Na<sub>0.78</sub>K<sub>0.22</sub>)TiO<sub>3</sub> Nanoparticle Filler–Elastomeric Composite Films for Paper‐Based Flexible Power Generators.
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201900950
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- Article
Multifunctional Ultrastretchable Printed Soft Electronic Devices for Wearable Applications.
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201900922
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- Article
Understanding the Crystallographic Phase Relations in Alkali‐Trihalogeno‐Germanates in Terms of Ferroelectric or Antiferroelectric Arrangements of the Tetrahedral GeX<sub>3</sub> Units.
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201900887
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- Article
An Artificial Optoelectronic Synapse Based on a Photoelectric Memcapacitor.
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201900858
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- Publication type:
- Article
Signatures of a Charge Density Wave Phase and the Chiral Anomaly in the Fermionic Material Cobalt Monosilicide CoSi.
- Published in:
- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201900857
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- Publication type:
- Article
Routes for Efficiency Enhancement in Fluorescent TADF Exciplex Host OLEDs Gained from an Electro‐Optical Device Model.
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201900804
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- Article
Multifield‐Inspired Tunable Carrier Effects Based on Ferroelectric‐Silicon PN Heterojunction.
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201900795
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- Article
Conformal Cu Coating on Electrospun Nanofibers for 3D Electro‐Conductive Networks.
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201900767
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- Article
Near‐Infrared‐Irradiation‐Mediated Synaptic Behavior from Tunable Charge‐Trapping Dynamics.
- Published in:
- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201900765
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- Publication type:
- Article
Bromine Vacancy Redistribution and Metallic‐Ion‐Migration‐Induced Air‐Stable Resistive Switching Behavior in All‐Inorganic Perovskite CsPbBr<sub>3</sub> Film‐Based Memory Device.
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201900754
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- Article
Universal Scaling Law for the Size Effect on Superelasticity at the Nanoscale Promotes the Use of Shape‐Memory Alloys in Stretchable Devices.
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201900741
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- Article