Works matching IS 2199160X AND DT 2020 AND VI 6 AND IP 11

Results: 28

Metal‐Oxide Transistors: Coating Thickness Controls Crystallinity and Enables Homoepitaxial Growth of Ultra‐Thin‐Channel Blade‐Coated In2O3 Transistors (Adv. Electron. Mater. 11/2020).

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 11, p. 1, doi. 10.1002/aelm.202000354

By:

Kirmani, Ahmad R.;
Chen, Huilang;
Stafford, Christopher M.;
Bittle, Emily G.;
Richter, Lee J.

Publication type:

Article

Epidermal Electronics: Ultrathin, Stretchable, and Breathable Epidermal Electronics Based on a Facile Bubble Blowing Method (Adv. Electron. Mater. 11/2020).

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 11, p. 1, doi. 10.1002/aelm.202070047

By:

Yang, Xianqing;
Li, Lianhui;
Wang, Shuqi;
Lu, Qifeng;
Bai, Yuanyuan;
Sun, Fuqin;
Li, Tie;
Li, Yue;
Wang, Zihao;
Zhao, Yangyong;
Shi, Yixiang;
Zhang, Ting

Publication type:

Article

Flexible Sensors: Flexible Monolayer Molecular Crystal‐Field Effect Transistors for Ultrasensitive and Selective Detection of Dimethoate (Adv. Electron. Mater. 11/2020).

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 11, p. 1, doi. 10.1002/aelm.202070046

By:

Qiu, Fei;
Liu, Jie;
Zhang, Hantang;
Li, Haiyang;
Liu, Jianghong;
Shi, Xiaosong;
Li, Chunlei;
Shi, Yanjun;
Hu, Yuanyuan;
Guo, Yunlong;
Gao, Xike;
Ai, Shiyun;
Jiang, Lang

Publication type:

Article

Masthead: (Adv. Electron. Mater. 11/2020).

Published in:: Advanced Electronic Materials, 2020, v. 6, n. 11, p. 1, doi. 10.1002/aelm.202070045
Publication type:: Article

Neuromorphic Computing: Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching (Adv. Electron. Mater. 11/2020).

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 11, p. 1, doi. 10.1002/aelm.202070044

By:

Petzold, Stefan;
Piros, Eszter;
Eilhardt, Robert;
Zintler, Alexander;
Vogel, Tobias;
Kaiser, Nico;
Radetinac, Aldin;
Komissinskiy, Philipp;
Jalaguier, Eric;
Nolot, Emmanuel;
Charpin‐Nicolle, Christelle;
Wenger, Christian;
Molina‐Luna, Leopoldo;
Miranda, Enrique;
Alff, Lambert

Publication type:

Article

Multistate Logic Inverter Based on Black Phosphorus/SnSeS Heterostructure.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 11, p. 1, doi. 10.1002/aelm.202000879

By:

Lv, Wenxing;
Fu, Xia;
Luo, Xin;
Lv, Weiming;
Cai, Jialin;
Zhang, Baoshun;
Wei, Zhongming;
Liu, Zhongyuan;
Zeng, Zhongming

Publication type:

Article

Donor–Acceptor Metallopolymers Containing Ferrocene for Brain Inspired Memristive Devices.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 11, p. 1, doi. 10.1002/aelm.202000841

By:

Zhang, Miaocheng;
Ma, Chenxi;
Du, Dawei;
Xiang, Jing;
Yao, Suhao;
Hu, Ertao;
Liu, Shujuan;
Tong, Yi;
Wong, Wai‐Yeung;
Zhao, Qiang

Publication type:

Article

Fabrication of Flexible Resistive Switching Devices Based on Lead‐Free All‐Inorganic CsSnBr3 Perovskite Using a One‐Step Chemical Vapor Deposition Method.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 11, p. 1, doi. 10.1002/aelm.202000799

By:

Wang, Hongjun;
Lin, Jiaquan;
Zhu, Yuanyuan;
Zeng, Xiong;
Wei, Hong;
Cheng, Pengwei;
Lu, Hongbing;
Liu, Yong;
Xiong, Rui

Publication type:

Article

Heterojunction Channels in Oxide Semiconductors for Visible‐Blind Nonvolatile Optoelectronic Memories.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 11, p. 1, doi. 10.1002/aelm.202000747

By:

Tai, Mao‐Chou;
Wang, Yu‐Xuan;
Chang, Ting‐Chang;
Lin, Chih‐Chih;
Tu, Yu‐Fa;
Hung, Yang‐Hao;
Ciou, Fong‐Min;
Lin, Yu‐Shan;
Sze, Simon

Publication type:

Article

Size‐ and Temperature‐Dependent Suppression of Phonon Thermal Conductivity in Carbon Nanotube Thermoelectric Films.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 11, p. 1, doi. 10.1002/aelm.202000746

By:

Wesenberg, Devin J.;
Roos, Michael J.;
Avery, Azure D.;
Blackburn, Jeffrey L.;
Ferguson, Andrew J.;
Zink, Barry L.

Publication type:

Article

Construction of High Stable All‐Graphene‐Based FETs as Highly Sensitive Dual‐Signal miRNA Sensors by a Covalent Layer‐by‐Layer Assembling Method.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 11, p. 1, doi. 10.1002/aelm.202000731

By:

Sun, Mingyuan;
Zhang, Congcong;
Wang, Jian;
Sun, Chenfang;
Ji, Yanchen;
Cheng, Shanshan;
Liu, Hong

Publication type:

Article

Spiropyran‐Functionalized Polymer–Carbon Nanotube Hybrids for Dynamic Optical Memory Devices and UV Sensors.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 11, p. 1, doi. 10.1002/aelm.202000717

By:

Balcı Leinen, Merve;
Klein, Patrick;
Sebastian, Finn L.;
Zorn, Nicolas F.;
Adamczyk, Sylwia;
Allard, Sybille;
Scherf, Ullrich;
Zaumseil, Jana

Publication type:

Article

Design of a Controllable Redox‐Diffusive Threshold Switching Memristor.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 11, p. 1, doi. 10.1002/aelm.202000695

By:

Sun, Yiming;
Song, Cheng;
Yin, Siqi;
Qiao, Leilei;
Wan, Qin;
Wang, Rui;
Zeng, Fei;
Pan, Feng

Publication type:

Article

Quantum Confinement and Thickness‐Dependent Electron Transport in Solution‐Processed In2O3 Transistors.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 11, p. 1, doi. 10.1002/aelm.202000682

By:

Isakov, Ivan;
Faber, Hendrik;
Mottram, Alexander D.;
Das, Satyajit;
Grell, Max;
Regoutz, Anna;
Kilmurray, Rebecca;
McLachlan, Martyn A.;
Payne, David J.;
Anthopoulos, Thomas D.

Publication type:

Article

Humidity‐Dependent Characteristics of Few‐Layer MoS2 Field Effect Transistors.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 11, p. 1, doi. 10.1002/aelm.202000659

By:

Yang, Hui;
Cai, Sa;
Wu, Dongping;
Fang, Xiaosheng

Publication type:

Article

Field‐Induced Ferroelectric Hf1‐xZrxO2 Thin Films for High‐k Dynamic Random Access Memory.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 11, p. 1, doi. 10.1002/aelm.202000631

By:

Hyun, Seung Dam;
Park, Hyeon Woo;
Park, Min Hyuk;
Lee, Young Hwan;
Lee, Yong Bin;
Kim, Beom Yong;
Kim, Ho Hyun;
Kim, Baek Su;
Hwang, Cheol Seong

Publication type:

Article

Highly Ordered BN⊥–BN⊥ Stacking Structure for Improved Thermally Conductive Polymer Composites.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 11, p. 1, doi. 10.1002/aelm.202000627

By:

Ghosh, Barun;
Xu, Fang;
Grant, David M.;
Giangrande, Paolo;
Gerada, Chris;
George, Michael W.;
Hou, Xianghui

Publication type:

Article

Stable Heating Above 900 K in the Field Emission of ZnO Nanowires: Mechanism for Achieving High Current in Large Scale Field Emitter Arrays.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 11, p. 1, doi. 10.1002/aelm.202000624

By:

Chen, Yicong;
Luo, Shisong;
Cao, Xiuqing;
Li, Yufeng;
She, Juncong;
Deng, Shaozhi;
Chen, Jun

Publication type:

Article

In‐Situ Photoelectron Spectroscopy Study on the Air Degradation of PEDOT:PSS in Terms of Electrical and Thermoelectric Properties.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 11, p. 1, doi. 10.1002/aelm.202000620

By:

Yun, Dong‐Jin;
Jung, Jaemin;
Sung, Young Mo;
Ra, Hyemin;
Kim, Jung‐Min;
Chung, JaeGwan;
Kim, Se Yun;
Kim, Yong‐Su;
Heo, Sung;
Kim, Ki‐Hong;
Jeong, Yong Jin;
Jang, Jaeyoung

Publication type:

Article

Overlarge Gauge Factor Yields a Large Measuring Error for Resistive‐Type Stretchable Strain Sensors.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 11, p. 1, doi. 10.1002/aelm.202000618

By:

Li, Shuang;
Liu, Guodong;
Wang, Liwu;
Fang, Guanhui;
Su, Yewang

Publication type:

Article

Solution Processable High Performance Multiwall Carbon Nanotube–Si Heterojunctions.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 11, p. 1, doi. 10.1002/aelm.202000617

By:

Dwivedi, Neeraj;
Dhand, Chetna;
Anderson, Erik C.;
Kumar, Rajeev;
Liao, Baochen;
Yeo, Reuben J.;
Khan, Raju;
Carey, J. David;
Saifullah, Mohammad S. M.;
Kumar, Sushil;
Malik, Hitendra K.;
Hashmi, S. A. R.;
Srivastava, Avanish K.;
Sankaranarayanan, Subramanian K. R. S.;
Stangl, Rolf;
Duttagupta, Shubham

Publication type:

Article

Flexible Monolayer Molecular Crystal‐Field Effect Transistors for Ultrasensitive and Selective Detection of Dimethoate.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 11, p. 1, doi. 10.1002/aelm.202000579

By:

Qiu, Fei;
Liu, Jie;
Zhang, Hantang;
Li, Haiyang;
Liu, Jianghong;
Shi, Xiaosong;
Li, Chunlei;
Shi, Yanjun;
Hu, Yuanyuan;
Guo, Yunlong;
Gao, Xike;
Ai, Shiyun;
Jiang, Lang

Publication type:

Article

Rigid Exchange Coupling in Rare‐Earth‐Lean Amorphous Hard/Soft Nanocomposites.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 11, p. 1, doi. 10.1002/aelm.202000573

By:

Rani, Parul;
Muscas, Giuseppe;
Stopfel, Henry;
Andersson, Gabriella;
Jönsson, Petra Erika

Publication type:

Article

Multifunctional Graphene Composites for Electromagnetic Shielding and Thermal Management at Elevated Temperatures.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 11, p. 1, doi. 10.1002/aelm.202000520

By:

Barani, Zahra;
Kargar, Fariborz;
Mohammadzadeh, Amirmahdi;
Naghibi, Sahar;
Lo, Carissa;
Rivera, Brandon;
Balandin, Alexander A.

Publication type:

Article

Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 11, p. 1, doi. 10.1002/aelm.202000439

By:

Petzold, Stefan;
Piros, Eszter;
Eilhardt, Robert;
Zintler, Alexander;
Vogel, Tobias;
Kaiser, Nico;
Radetinac, Aldin;
Komissinskiy, Philipp;
Jalaguier, Eric;
Nolot, Emmanuel;
Charpin‐Nicolle, Christelle;
Wenger, Christian;
Molina‐Luna, Leopoldo;
Miranda, Enrique;
Alff, Lambert

Publication type:

Article

Voltage‐Controlled Deblocking of Magnetization Reversal in Thin Films by Tunable Domain Wall Interactions and Pinning Sites.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 11, p. 1, doi. 10.1002/aelm.202000406

By:

Zehner, Jonas;
Soldatov, Ivan;
Schneider, Sebastian;
Heller, René;
Khojasteh, Nasrin B.;
Schiemenz, Sandra;
Fähler, Sebastian;
Nielsch, Kornelius;
Schäfer, Rudolf;
Leistner, Karin

Publication type:

Article

Coating Thickness Controls Crystallinity and Enables Homoepitaxial Growth of Ultra‐Thin‐Channel Blade‐Coated In2O3 Transistors.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 11, p. 1, doi. 10.1002/aelm.202000354

By:

Kirmani, Ahmad R.;
Chen, Huilang;
Stafford, Christopher M.;
Bittle, Emily G.;
Richter, Lee J.

Publication type:

Article

Ultrathin, Stretchable, and Breathable Epidermal Electronics Based on a Facile Bubble Blowing Method.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 11, p. 1, doi. 10.1002/aelm.202000306

By:

Yang, Xianqing;
Li, Lianhui;
Wang, Shuqi;
Lu, Qifeng;
Bai, Yuanyuan;
Sun, Fuqin;
Li, Tie;
Li, Yue;
Wang, Zihao;
Zhao, Yangyong;
Shi, Yixiang;
Zhang, Ting

Publication type:

Article

Works matching IS 2199160X AND DT 2020 AND VI 6 AND IP 11

Metal‐Oxide Transistors: Coating Thickness Controls Crystallinity and Enables Homoepitaxial Growth of Ultra‐Thin‐Channel Blade‐Coated In<sub>2</sub>O<sub>3</sub> Transistors (Adv. Electron. Mater. 11/2020).

Epidermal Electronics: Ultrathin, Stretchable, and Breathable Epidermal Electronics Based on a Facile Bubble Blowing Method (Adv. Electron. Mater. 11/2020).

Flexible Sensors: Flexible Monolayer Molecular Crystal‐Field Effect Transistors for Ultrasensitive and Selective Detection of Dimethoate (Adv. Electron. Mater. 11/2020).

Masthead: (Adv. Electron. Mater. 11/2020).

Neuromorphic Computing: Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching (Adv. Electron. Mater. 11/2020).

Multistate Logic Inverter Based on Black Phosphorus/SnSeS Heterostructure.

Donor–Acceptor Metallopolymers Containing Ferrocene for Brain Inspired Memristive Devices.

Fabrication of Flexible Resistive Switching Devices Based on Lead‐Free All‐Inorganic CsSnBr<sub>3</sub> Perovskite Using a One‐Step Chemical Vapor Deposition Method.

Heterojunction Channels in Oxide Semiconductors for Visible‐Blind Nonvolatile Optoelectronic Memories.

Size‐ and Temperature‐Dependent Suppression of Phonon Thermal Conductivity in Carbon Nanotube Thermoelectric Films.

Construction of High Stable All‐Graphene‐Based FETs as Highly Sensitive Dual‐Signal miRNA Sensors by a Covalent Layer‐by‐Layer Assembling Method.

Spiropyran‐Functionalized Polymer–Carbon Nanotube Hybrids for Dynamic Optical Memory Devices and UV Sensors.

Design of a Controllable Redox‐Diffusive Threshold Switching Memristor.

Quantum Confinement and Thickness‐Dependent Electron Transport in Solution‐Processed In<sub>2</sub>O<sub>3</sub> Transistors.

Humidity‐Dependent Characteristics of Few‐Layer MoS<sub>2</sub> Field Effect Transistors.

Field‐Induced Ferroelectric Hf<sub>1‐</sub><sub>x</sub>Zr<sub>x</sub>O<sub>2</sub> Thin Films for High‐k Dynamic Random Access Memory.

Highly Ordered BN<sub>⊥</sub>–BN<sub>⊥</sub> Stacking Structure for Improved Thermally Conductive Polymer Composites.

Stable Heating Above 900 K in the Field Emission of ZnO Nanowires: Mechanism for Achieving High Current in Large Scale Field Emitter Arrays.

In‐Situ Photoelectron Spectroscopy Study on the Air Degradation of PEDOT:PSS in Terms of Electrical and Thermoelectric Properties.

Overlarge Gauge Factor Yields a Large Measuring Error for Resistive‐Type Stretchable Strain Sensors.

Solution Processable High Performance Multiwall Carbon Nanotube–Si Heterojunctions.

Flexible Monolayer Molecular Crystal‐Field Effect Transistors for Ultrasensitive and Selective Detection of Dimethoate.

Rigid Exchange Coupling in Rare‐Earth‐Lean Amorphous Hard/Soft Nanocomposites.

Multifunctional Graphene Composites for Electromagnetic Shielding and Thermal Management at Elevated Temperatures.

Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching.

Voltage‐Controlled Deblocking of Magnetization Reversal in Thin Films by Tunable Domain Wall Interactions and Pinning Sites.

Coating Thickness Controls Crystallinity and Enables Homoepitaxial Growth of Ultra‐Thin‐Channel Blade‐Coated In<sub>2</sub>O<sub>3</sub> Transistors.

Ultrathin, Stretchable, and Breathable Epidermal Electronics Based on a Facile Bubble Blowing Method.