Works matching IS 2199160X AND DT 2019 AND VI 5 AND IP 9

Results: 23

Quantum Conductance: Recent Advances of Quantum Conductance in Memristors (Adv. Electron. Mater. 9/2019).

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 9, p. N.PAG, doi. 10.1002/aelm.201970047

By:

Xue, Wuhong;
Gao, Shuang;
Shang, Jie;
Yi, Xiaohui;
Liu, Gang;
Li, Run‐Wei

Publication type:

Article

Memristive Synapses and Neurons for Bioinspired Computing.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 9, p. N.PAG, doi. 10.1002/aelm.201900287

By:

Yang, Rui;
Huang, He‐Ming;
Guo, Xin

Publication type:

Article

Scalable 3D Ta:SiOx Memristive Devices.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 9, p. N.PAG, doi. 10.1002/aelm.201800958

By:

Jiang, Hao;
Li, Can;
Lin, Peng;
Pi, Shuang;
Yang, Jianhua Joshua;
Xia, Qiangfei

Publication type:

Article

Nanoionic Resistive‐Switching Devices.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 9, p. N.PAG, doi. 10.1002/aelm.201900184

By:

Zhu, Xiaojian;
Lee, Seung Hwan;
Lu, Wei D.

Publication type:

Article

Artificial Neural Network (ANN) to Spiking Neural Network (SNN) Converters Based on Diffusive Memristors.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 9, p. N.PAG, doi. 10.1002/aelm.201900060

By:

Midya, Rivu;
Wang, Zhongrui;
Asapu, Shiva;
Joshi, Saumil;
Li, Yunning;
Zhuo, Ye;
Song, Wenhao;
Jiang, Hao;
Upadhay, Navnidhi;
Rao, Mingyi;
Lin, Peng;
Li, Can;
Xia, Qiangfei;
Yang, J. Joshua

Publication type:

Article

Weight Programming in DNN Analog Hardware Accelerators in the Presence of NVM Variability.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 9, p. N.PAG, doi. 10.1002/aelm.201900026

By:

Mackin, Charles;
Tsai, Hsinyu;
Ambrogio, Stefano;
Narayanan, Pritish;
Chen, An;
Burr, Geoffrey W.

Publication type:

Article

Masthead: (Adv. Electron. Mater. 9/2019).

Published in:: Advanced Electronic Materials, 2019, v. 5, n. 9, p. N.PAG, doi. 10.1002/aelm.201970046
Publication type:: Article

Artificial Synapses: Dimensionality Dependent Plasticity in Halide Perovskite Artificial Synapses for Neuromorphic Computing (Adv. Electron. Mater. 9/2019).

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 9, p. N.PAG, doi. 10.1002/aelm.201970045

By:

Kim, Sung‐Il;
Lee, Yeongjun;
Park, Min‐Ho;
Go, Gyeong‐Tak;
Kim, Young‐Hoon;
Xu, Wentao;
Lee, Hyeon‐Dong;
Kim, Hobeom;
Seo, Dae‐Gyo;
Lee, Wanhee;
Lee, Tae‐Woo

Publication type:

Article

Nanowire Memristors: Recent Developments and Perspectives for Memristive Devices Based on Metal Oxide Nanowires (Adv. Electron. Mater. 9/2019).

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 9, p. N.PAG, doi. 10.1002/aelm.201970044

By:

Milano, Gianluca;
Porro, Samuele;
Valov, Ilia;
Ricciardi, Carlo

Publication type:

Article

Dimensionality Dependent Plasticity in Halide Perovskite Artificial Synapses for Neuromorphic Computing.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 9, p. N.PAG, doi. 10.1002/aelm.201900008

By:

Kim, Sung‐Il;
Lee, Yeongjun;
Park, Min‐Ho;
Go, Gyeong‐Tak;
Kim, Young‐Hoon;
Xu, Wentao;
Lee, Hyeon‐Dong;
Kim, Hobeom;
Seo, Dae‐Gyo;
Lee, Wanhee;
Lee, Tae‐Woo

Publication type:

Article

Stochastic Memory Devices for Security and Computing.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 9, p. N.PAG, doi. 10.1002/aelm.201900198

By:

Carboni, Roberto;
Ielmini, Daniele

Publication type:

Article

Low‐Conductance and Multilevel CMOS‐Integrated Nanoscale Oxide Memristors.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 9, p. N.PAG, doi. 10.1002/aelm.201800876

By:

Sheng, Xia;
Graves, Catherine E.;
Kumar, Suhas;
Li, Xuema;
Buchanan, Brent;
Zheng, Le;
Lam, Sity;
Li, Can;
Strachan, John Paul

Publication type:

Article

2D Atomic Crystals: A Promising Solution for Next‐Generation Data Storage.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 9, p. N.PAG, doi. 10.1002/aelm.201800944

By:

Hou, Xiang;
Chen, Huawei;
Zhang, Zhenhan;
Wang, Shuiyuan;
Zhou, Peng

Publication type:

Article

Active Electrode Redox Reactions and Device Behavior in ECM Type Resistive Switching Memories.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 9, p. N.PAG, doi. 10.1002/aelm.201800933

By:

Lübben, Michael;
Valov, Ilia

Publication type:

Article

Recent Advances of Quantum Conductance in Memristors.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 9, p. N.PAG, doi. 10.1002/aelm.201800854

By:

Xue, Wuhong;
Gao, Shuang;
Shang, Jie;
Yi, Xiaohui;
Liu, Gang;
Li, Run‐Wei

Publication type:

Article

Various Threshold Switching Devices for Integrate and Fire Neuron Applications.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 9, p. N.PAG, doi. 10.1002/aelm.201800866

By:

Lee, Donguk;
Kwak, Myonghoon;
Moon, Kibong;
Choi, Wooseok;
Park, Jaehyuk;
Yoo, Jongmyung;
Song, Jeonghwan;
Lim, Seokjae;
Sung, Changhyuck;
Banerjee, Writam;
Hwang, Hyunsang

Publication type:

Article

What Will Come After V‐NAND—Vertical Resistive Switching Memory?

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 9, p. N.PAG, doi. 10.1002/aelm.201800914

By:

Yoon, Kyung Jean;
Kim, Yumin;
Hwang, Cheol Seong

Publication type:

Article

Recent Developments and Perspectives for Memristive Devices Based on Metal Oxide Nanowires.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 9, p. N.PAG, doi. 10.1002/aelm.201800909

By:

Milano, Gianluca;
Porro, Samuele;
Valov, Ilia;
Ricciardi, Carlo

Publication type:

Article

Engineering Oxygen Migration for Homogeneous Volume Resistive Switching in 3‐Terminal Devices.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 9, p. N.PAG, doi. 10.1002/aelm.201800629

By:

Gonzalez‐Rosillo, Juan Carlos;
Ortega‐Hernandez, Rafael;
Arndt, Benedikt;
Coll, Mariona;
Dittmann, Regina;
Obradors, Xavier;
Palau, Anna;
Suñe, Jordi;
Puig, Teresa

Publication type:

Article

Memristors for Hardware Security Applications.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 9, p. N.PAG, doi. 10.1002/aelm.201800872

By:

Pang, Yachuan;
Gao, Bin;
Lin, Bohan;
Qian, He;
Wu, Huaqiang

Publication type:

Article

Investigation of the Eightwise Switching Mechanism and Its Suppression in SrTiO3 Modulated by Humidity and Interchanged Top and Bottom Platinum and LaNiO3 Electrode Contacts.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 9, p. N.PAG, doi. 10.1002/aelm.201800566

By:

Sediva, Eva;
Bowman, William J.;
Gonzalez‐Rosillo, Juan Carlos;
Rupp, Jennifer L. M.

Publication type:

Article

S‐Type Negative Differential Resistance in Semiconducting Transition‐Metal Dichalcogenides.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 9, p. N.PAG, doi. 10.1002/aelm.201800853

By:

Wang, Miao;
Wang, Chen‐Yu;
Wu, Chenchen;
Li, Qiao;
Pan, Chen;
Wang, Cong;
Liang, Shi‐Jun;
Miao, Feng

Publication type:

Article

Low Power Parylene‐Based Memristors with a Graphene Barrier Layer for Flexible Electronics Applications.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 9, p. N.PAG, doi. 10.1002/aelm.201800852

By:

Chen, Qingyu;
Lin, Min;
Wang, Zongwei;
Zhao, Xiaolong;
Cai, Yimao;
Liu, Qi;
Fang, Yichen;
Yang, Yuchao;
He, Ming;
Huang, Ru

Publication type:

Article

Works matching IS 2199160X AND DT 2019 AND VI 5 AND IP 9

Quantum Conductance: Recent Advances of Quantum Conductance in Memristors (Adv. Electron. Mater. 9/2019).

Memristive Synapses and Neurons for Bioinspired Computing.

Scalable 3D Ta:SiO<sub>x</sub> Memristive Devices.

Nanoionic Resistive‐Switching Devices.

Artificial Neural Network (ANN) to Spiking Neural Network (SNN) Converters Based on Diffusive Memristors.

Weight Programming in DNN Analog Hardware Accelerators in the Presence of NVM Variability.

Masthead: (Adv. Electron. Mater. 9/2019).

Artificial Synapses: Dimensionality Dependent Plasticity in Halide Perovskite Artificial Synapses for Neuromorphic Computing (Adv. Electron. Mater. 9/2019).

Nanowire Memristors: Recent Developments and Perspectives for Memristive Devices Based on Metal Oxide Nanowires (Adv. Electron. Mater. 9/2019).

Dimensionality Dependent Plasticity in Halide Perovskite Artificial Synapses for Neuromorphic Computing.

Stochastic Memory Devices for Security and Computing.

Low‐Conductance and Multilevel CMOS‐Integrated Nanoscale Oxide Memristors.

2D Atomic Crystals: A Promising Solution for Next‐Generation Data Storage.

Active Electrode Redox Reactions and Device Behavior in ECM Type Resistive Switching Memories.

Recent Advances of Quantum Conductance in Memristors.

Various Threshold Switching Devices for Integrate and Fire Neuron Applications.

What Will Come After V‐NAND—Vertical Resistive Switching Memory?

Recent Developments and Perspectives for Memristive Devices Based on Metal Oxide Nanowires.

Engineering Oxygen Migration for Homogeneous Volume Resistive Switching in 3‐Terminal Devices.

Memristors for Hardware Security Applications.

Investigation of the Eightwise Switching Mechanism and Its Suppression in SrTiO<sub>3</sub> Modulated by Humidity and Interchanged Top and Bottom Platinum and LaNiO<sub>3</sub> Electrode Contacts.

S‐Type Negative Differential Resistance in Semiconducting Transition‐Metal Dichalcogenides.

Low Power Parylene‐Based Memristors with a Graphene Barrier Layer for Flexible Electronics Applications.