Works matching IS 2199160X AND DT 2019 AND VI 5 AND IP 8

Results: 29

One‐Transistor Memory: One‐Transistor Memory Compatible with Si‐Based Technology with Multilevel Applications (Adv. Electron. Mater. 8/2019).

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201970043

By:

Dai, Mingzhi;
Yang, Wenwei;
Li, Ming;
Zhang, Lei;
Huo, Changhe;
Dong, Yemin;
Webster, Thomas J.

Publication type:

Article

Organic TFTs: Ambipolarity and Air Stability of Silicon Phthalocyanine Organic Thin‐Film Transistors (Adv. Electron. Mater. 8/2019).

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201970041

By:

Melville, Owen A.;
Grant, Trevor M.;
Mirka, Brendan;
Boileau, Nicholas T.;
Park, Jeongwon;
Lessard, Benoît H.

Publication type:

Article

Thickness‐Dependent Asymmetric Potential Landscape and Polarization Relaxation in Ferroelectric HfxZr1−xO2 Thin Films through Interfacial Bound Charges.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900554

By:

Zhu, Ying;
Ning, Hongkai;
Yu, Zhihao;
Pan, Qiang;
Zhang, Chunchen;
Luo, Chen;
Tu, Xuecou;
You, Yumeng;
Wang, Peng;
Wu, Xing;
Shi, Yi;
Wang, Xinran

Publication type:

Article

Conductive Polymer–Exoelectrogen Hybrid Bioelectrode with Improved Biofilm Formation and Extracellular Electron Transport.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900320

By:

Zhang, Pengbo;
Zhou, Xin;
Qi, Ruilian;
Gai, Panpan;
Liu, Libing;
Lv, Fengting;
Wang, Shu

Publication type:

Article

Masthead: (Adv. Electron. Mater. 8/2019).

Published in:: Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201970040
Publication type:: Article

2D Electronics: Electronic Devices and Circuits Based on Wafer‐Scale Polycrystalline Monolayer MoS2 by Chemical Vapor Deposition (Adv. Electron. Mater. 8/2019).

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900393

By:

Wang, Lin;
Chen, Li;
Wong, Swee Liang;
Huang, Xin;
Liao, Wugang;
Zhu, Chunxiang;
Lim, Yee‐Fun;
Li, Dabing;
Liu, Xinke;
Chi, Dongzhi;
Ang, Kah‐Wee

Publication type:

Article

Hybrid Field Emitters: Highly Stable Field Emission from a Tungsten Diselenide Monolayer on Zinc Oxide Nanowire by Geometrically Modulating Hot Electrons (Adv. Electron. Mater. 8/2019).

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201970042

By:

Chen, Yicong;
Liu, Liwei;
Zheng, Keshuang;
She, Juncong;
Deng, Shaozhi;
Xu, Ningsheng;
Chen, Jun

Publication type:

Article

Nonvolatile Photoelectric Memory Induced by Interfacial Charge at a Ferroelectric PZT‐Gated Black Phosphorus Transistor.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900458

By:

Xie, Liu;
Chen, Xin;
Dong, Zhuo;
Yu, Qiang;
Zhao, Xinxin;
Yuan, Guoliang;
Zeng, Zhongming;
Wang, Yaojin;
Zhang, Kai

Publication type:

Article

High‐Transconductance Stretchable Transistors Achieved by Controlled Gold Microcrack Morphology.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900347

By:

Matsuhisa, Naoji;
Jiang, Ying;
Liu, Zhiyuan;
Chen, Geng;
Wan, Changjin;
Kim, Yeongin;
Kang, Jiheong;
Tran, Helen;
Wu, Hung‐Chin;
You, Insang;
Bao, Zhenan;
Chen, Xiaodong

Publication type:

Article

CNT Electronics: Advances in High‐Performance Carbon‐Nanotube Thin‐Film Electronics (Adv. Electron. Mater. 8/2019).

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201970039

By:

Si, Jia;
Xu, Lin;
Zhu, Maguang;
Zhang, Zhiyong;
Peng, Lian‐Mao

Publication type:

Article

Remarkably Stable, High‐Quality Semiconducting Single‐Walled Carbon Nanotube Inks for Highly Reproducible Field‐Effect Transistors.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900288

By:

Talsma, Wytse;
Sengrian, Aprizal Akbar;
Salazar‐Rios, Jorge Mario;
Duim, Herman;
Abdu‐Aguye, Mustapha;
Jung, Stefan;
Allard, Sybille;
Scherf, Ullrich;
Loi, Maria Antonietta

Publication type:

Article

Reverse‐Offset Printing of Metal‐Nitrate‐Based Metal Oxide Semiconductor Ink for Flexible TFTs.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900272

By:

Leppäniemi, Jaakko;
Sneck, Asko;
Kusaka, Yasuyuki;
Fukuda, Nobuko;
Alastalo, Ari

Publication type:

Article

Electroresponsive Stretchable Liquid‐Crystal Device with Deformable Gel Network.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900373

By:

Tong, Xiaoqian;
Shan, Tianyu;
Du, Qinqing;
An, Zhihang;
He, Huiwen;
Ma, Meng;
Shi, Yanqin;
Chen, Si;
Wang, Xu

Publication type:

Article

Bilayered Oxide‐Based Cognitive Memristor with Brain‐Inspired Learning Activities.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900439

By:

Xiong, Wen;
Zhu, Li Qiang;
Ye, Cong;
Yu, Fei;
Ren, Zheng Yu;
Ge, Zi Yi

Publication type:

Article

Enhancement in Performance of Transparent p‐NiO/n‐ZnO Heterojunction Ultrafast Self‐Powered Photodetector via Pyro‐Phototronic Effect.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900438

By:

Rana, Amit Kumar;
Kumar, Mohit;
Ban, Dong‐Kyun;
Wong, Ching‐Ping;
Yi, Junsin;
Kim, Joondong

Publication type:

Article

Electronic Devices and Circuits Based on Wafer‐Scale Polycrystalline Monolayer MoS2 by Chemical Vapor Deposition.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201970038

By:

Wang, Lin;
Chen, Li;
Wong, Swee Liang;
Huang, Xin;
Liao, Wugang;
Zhu, Chunxiang;
Lim, Yee‐Fun;
Li, Dabing;
Liu, Xinke;
Chi, Dongzhi;
Ang, Kah‐Wee

Publication type:

Article

Static and Dynamic Magnetic Properties of Single‐Crystalline Yttrium Iron Garnet Films Epitaxially Grown on Three Garnet Substrates.

Published in:

2019

By:

Yoshimoto, Takuya;
Goto, Taichi;
Shimada, Kei;
Iwamoto, Bungo;
Nakamura, Yuichi;
Uchida, Hironaga;
Ross, Caroline A.;
Inoue, Mitsuteru

Publication type:

Correction Notice

Tuning Ni/Al Ratio to Enhance Pseudocapacitive Charge Storage Properties of Nickel–Aluminum Layered Double Hydroxide.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900215

By:

Li, Gengnan;
Zhang, Xianghui;
Qiu, Dantong;
Liu, Zilin;
Yang, Chen;
Cockreham, Cody B.;
Wang, Baodong;
Fu, Liangjie;
Zhang, Jianghao;
Sudduth, Berlin;
Guo, Xiaofeng;
Sun, Hui;
Huang, Zhangyi;
Qi, Jianqi;
Sun, Junming;
Ha, Su;
Wang, Yong;
Wu, Di

Publication type:

Article

One‐Transistor Memory Compatible with Si‐Based Technology with Multilevel Applications.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900262

By:

Dai, Mingzhi;
Yang, Wenwei;
Li, Ming;
Zhang, Lei;
Huo, Changhe;
Dong, Yemin;
Webster, Thomas J.

Publication type:

Article

Switching Kinetics Control of W‐Based ReRAM Cells in Transient Operation by Interface Engineering.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201800835

By:

Shahrabi, Elmira;
Giovinazzo, Cecilia;
Hadad, Mahmoud;
LaGrange, Thomas;
Ramos, Miguel;
Ricciardi, Carlo;
Leblebici, Yusuf

Publication type:

Article

Solvent Engineering for High‐Performance n‐Type Organic Electrochemical Transistors.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900249

By:

Savva, Achilleas;
Ohayon, David;
Surgailis, Jokubas;
Paterson, Alexandra F.;
Hidalgo, Tania C.;
Chen, Xingxing;
Maria, Iuliana P.;
Paulsen, Bryan D.;
Petty, Anthony J.;
Rivnay, Jonathan;
McCulloch, Iain;
Inal, Sahika

Publication type:

Article

Nonsaturating Magnetoresistance and Nontrivial Band Topology of Type‐II Weyl Semimetal NbIrTe4.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900250

By:

Zhou, Wei;
Li, Bin;
Xu, Chun Qiang;
Delft, Maarten R.;
Chen, Yu Ge;
Fan, Xiao Chen;
Qian, Bin;
Hussey, Nigel E.;
Xu, Xiaofeng

Publication type:

Article

Further Examination of Interconnection in Conjugated Polymers for Organic Field‐Effect Transistors.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900213

By:

Yang, Hau‐Ren;
Lai, Yu‐Ying;
Lee, Jey‐Jau

Publication type:

Article

Modulation of Heavy Metal/Ferromagnetic Metal Interface for High‐Performance Spintronic Devices.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900134

By:

Peng, Shouzhong;
Zhu, Daoqian;
Zhou, Jiaqi;
Zhang, Boyu;
Cao, Anni;
Wang, Mengxing;
Cai, Wenlong;
Cao, Kaihua;
Zhao, Weisheng

Publication type:

Article

Highly Stable Field Emission from a Tungsten Diselenide Monolayer on Zinc Oxide Nanowire by Geometrically Modulating Hot Electrons.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201970042

By:

Chen, Yicong;
Liu, Liwei;
Zheng, Keshuang;
She, Juncong;
Deng, Shaozhi;
Xu, Ningsheng;
Chen, Jun

Publication type:

Article

Advances in High‐Performance Carbon‐Nanotube Thin‐Film Electronics.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900122

By:

Si, Jia;
Xu, Lin;
Zhu, Maguang;
Zhang, Zhiyong;
Peng, Lian‐Mao

Publication type:

Article

Ambipolarity and Air Stability of Silicon Phthalocyanine Organic Thin‐Film Transistors.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900087

By:

Melville, Owen A.;
Grant, Trevor M.;
Mirka, Brendan;
Boileau, Nicholas T.;
Park, Jeongwon;
Lessard, Benoît H.

Publication type:

Article

MoOx/Au Schottky‐Gated Field‐Effect Transistors and Their Fast Inverters.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900086

By:

Lan, Yang;
Hu, Chao;
Deng, Hui;
Sun, Lulu;
Yuan, Shengjie;
Wang, Jing;
Yu, Xiangxiang;
Yang, Xiaokun;
Zhou, Yinhua;
Song, Haisheng;
Huang, Xintang

Publication type:

Article

Magnetic Control of Flexible Thermoelectric Devices Based on Macroscopic 3D Interconnected Nanowire Networks.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201800819

By:

Abreu Araujo, Flavio;
da Câmara Santa Clara Gomes, Tristan;
Piraux, Luc

Publication type:

Article

Works matching IS 2199160X AND DT 2019 AND VI 5 AND IP 8

One‐Transistor Memory: One‐Transistor Memory Compatible with Si‐Based Technology with Multilevel Applications (Adv. Electron. Mater. 8/2019).

Organic TFTs: Ambipolarity and Air Stability of Silicon Phthalocyanine Organic Thin‐Film Transistors (Adv. Electron. Mater. 8/2019).

Thickness‐Dependent Asymmetric Potential Landscape and Polarization Relaxation in Ferroelectric Hf<sub>x</sub>Zr<sub>1−</sub><sub>x</sub>O<sub>2</sub> Thin Films through Interfacial Bound Charges.

Conductive Polymer–Exoelectrogen Hybrid Bioelectrode with Improved Biofilm Formation and Extracellular Electron Transport.

Masthead: (Adv. Electron. Mater. 8/2019).

2D Electronics: Electronic Devices and Circuits Based on Wafer‐Scale Polycrystalline Monolayer MoS<sub>2</sub> by Chemical Vapor Deposition (Adv. Electron. Mater. 8/2019).

Hybrid Field Emitters: Highly Stable Field Emission from a Tungsten Diselenide Monolayer on Zinc Oxide Nanowire by Geometrically Modulating Hot Electrons (Adv. Electron. Mater. 8/2019).

Nonvolatile Photoelectric Memory Induced by Interfacial Charge at a Ferroelectric PZT‐Gated Black Phosphorus Transistor.

High‐Transconductance Stretchable Transistors Achieved by Controlled Gold Microcrack Morphology.

CNT Electronics: Advances in High‐Performance Carbon‐Nanotube Thin‐Film Electronics (Adv. Electron. Mater. 8/2019).

Remarkably Stable, High‐Quality Semiconducting Single‐Walled Carbon Nanotube Inks for Highly Reproducible Field‐Effect Transistors.

Reverse‐Offset Printing of Metal‐Nitrate‐Based Metal Oxide Semiconductor Ink for Flexible TFTs.

Electroresponsive Stretchable Liquid‐Crystal Device with Deformable Gel Network.

Bilayered Oxide‐Based Cognitive Memristor with Brain‐Inspired Learning Activities.

Enhancement in Performance of Transparent p‐NiO/n‐ZnO Heterojunction Ultrafast Self‐Powered Photodetector via Pyro‐Phototronic Effect.

Electronic Devices and Circuits Based on Wafer‐Scale Polycrystalline Monolayer MoS<sub>2</sub> by Chemical Vapor Deposition.

Static and Dynamic Magnetic Properties of Single‐Crystalline Yttrium Iron Garnet Films Epitaxially Grown on Three Garnet Substrates.

Tuning Ni/Al Ratio to Enhance Pseudocapacitive Charge Storage Properties of Nickel–Aluminum Layered Double Hydroxide.

One‐Transistor Memory Compatible with Si‐Based Technology with Multilevel Applications.

Switching Kinetics Control of W‐Based ReRAM Cells in Transient Operation by Interface Engineering.

Solvent Engineering for High‐Performance n‐Type Organic Electrochemical Transistors.

Nonsaturating Magnetoresistance and Nontrivial Band Topology of Type‐II Weyl Semimetal NbIrTe<sub>4</sub>.

Further Examination of Interconnection in Conjugated Polymers for Organic Field‐Effect Transistors.

Modulation of Heavy Metal/Ferromagnetic Metal Interface for High‐Performance Spintronic Devices.

Highly Stable Field Emission from a Tungsten Diselenide Monolayer on Zinc Oxide Nanowire by Geometrically Modulating Hot Electrons.

Advances in High‐Performance Carbon‐Nanotube Thin‐Film Electronics.

Ambipolarity and Air Stability of Silicon Phthalocyanine Organic Thin‐Film Transistors.

MoO<sub>x</sub>/Au Schottky‐Gated Field‐Effect Transistors and Their Fast Inverters.

Magnetic Control of Flexible Thermoelectric Devices Based on Macroscopic 3D Interconnected Nanowire Networks.