Works matching IS 2199160X AND DT 2019 AND VI 5 AND IP 8

Results: 29

CNT Electronics: Advances in High‐Performance Carbon‐Nanotube Thin‐Film Electronics (Adv. Electron. Mater. 8/2019).
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201970039
By:
- Si, Jia;
- Xu, Lin;
- Zhu, Maguang;
- Zhang, Zhiyong;
- Peng, Lian‐Mao
Publication type:
Article
One‐Transistor Memory: One‐Transistor Memory Compatible with Si‐Based Technology with Multilevel Applications (Adv. Electron. Mater. 8/2019).
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201970043
By:
- Dai, Mingzhi;
- Yang, Wenwei;
- Li, Ming;
- Zhang, Lei;
- Huo, Changhe;
- Dong, Yemin;
- Webster, Thomas J.
Publication type:
Article
Hybrid Field Emitters: Highly Stable Field Emission from a Tungsten Diselenide Monolayer on Zinc Oxide Nanowire by Geometrically Modulating Hot Electrons (Adv. Electron. Mater. 8/2019).
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201970042
By:
- Chen, Yicong;
- Liu, Liwei;
- Zheng, Keshuang;
- She, Juncong;
- Deng, Shaozhi;
- Xu, Ningsheng;
- Chen, Jun
Publication type:
Article
Organic TFTs: Ambipolarity and Air Stability of Silicon Phthalocyanine Organic Thin‐Film Transistors (Adv. Electron. Mater. 8/2019).
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201970041
By:
- Melville, Owen A.;
- Grant, Trevor M.;
- Mirka, Brendan;
- Boileau, Nicholas T.;
- Park, Jeongwon;
- Lessard, Benoît H.
Publication type:
Article
Masthead: (Adv. Electron. Mater. 8/2019).
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201970040
Publication type:
Article
2D Electronics: Electronic Devices and Circuits Based on Wafer‐Scale Polycrystalline Monolayer MoS2 by Chemical Vapor Deposition (Adv. Electron. Mater. 8/2019).
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900393
By:
- Wang, Lin;
- Chen, Li;
- Wong, Swee Liang;
- Huang, Xin;
- Liao, Wugang;
- Zhu, Chunxiang;
- Lim, Yee‐Fun;
- Li, Dabing;
- Liu, Xinke;
- Chi, Dongzhi;
- Ang, Kah‐Wee
Publication type:
Article
Thickness‐Dependent Asymmetric Potential Landscape and Polarization Relaxation in Ferroelectric HfxZr1−xO2 Thin Films through Interfacial Bound Charges.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900554
By:
- Zhu, Ying;
- Ning, Hongkai;
- Yu, Zhihao;
- Pan, Qiang;
- Zhang, Chunchen;
- Luo, Chen;
- Tu, Xuecou;
- You, Yumeng;
- Wang, Peng;
- Wu, Xing;
- Shi, Yi;
- Wang, Xinran
Publication type:
Article
Nonvolatile Photoelectric Memory Induced by Interfacial Charge at a Ferroelectric PZT‐Gated Black Phosphorus Transistor.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900458
By:
- Xie, Liu;
- Chen, Xin;
- Dong, Zhuo;
- Yu, Qiang;
- Zhao, Xinxin;
- Yuan, Guoliang;
- Zeng, Zhongming;
- Wang, Yaojin;
- Zhang, Kai
Publication type:
Article
Bilayered Oxide‐Based Cognitive Memristor with Brain‐Inspired Learning Activities.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900439
By:
- Xiong, Wen;
- Zhu, Li Qiang;
- Ye, Cong;
- Yu, Fei;
- Ren, Zheng Yu;
- Ge, Zi Yi
Publication type:
Article
Enhancement in Performance of Transparent p‐NiO/n‐ZnO Heterojunction Ultrafast Self‐Powered Photodetector via Pyro‐Phototronic Effect.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900438
By:
- Rana, Amit Kumar;
- Kumar, Mohit;
- Ban, Dong‐Kyun;
- Wong, Ching‐Ping;
- Yi, Junsin;
- Kim, Joondong
Publication type:
Article
Electronic Devices and Circuits Based on Wafer‐Scale Polycrystalline Monolayer MoS2 by Chemical Vapor Deposition.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201970038
By:
- Wang, Lin;
- Chen, Li;
- Wong, Swee Liang;
- Huang, Xin;
- Liao, Wugang;
- Zhu, Chunxiang;
- Lim, Yee‐Fun;
- Li, Dabing;
- Liu, Xinke;
- Chi, Dongzhi;
- Ang, Kah‐Wee
Publication type:
Article
Static and Dynamic Magnetic Properties of Single‐Crystalline Yttrium Iron Garnet Films Epitaxially Grown on Three Garnet Substrates.
Published in:
2019
By:
- Yoshimoto, Takuya;
- Goto, Taichi;
- Shimada, Kei;
- Iwamoto, Bungo;
- Nakamura, Yuichi;
- Uchida, Hironaga;
- Ross, Caroline A.;
- Inoue, Mitsuteru
Publication type:
Correction Notice
Electroresponsive Stretchable Liquid‐Crystal Device with Deformable Gel Network.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900373
By:
- Tong, Xiaoqian;
- Shan, Tianyu;
- Du, Qinqing;
- An, Zhihang;
- He, Huiwen;
- Ma, Meng;
- Shi, Yanqin;
- Chen, Si;
- Wang, Xu
Publication type:
Article
High‐Transconductance Stretchable Transistors Achieved by Controlled Gold Microcrack Morphology.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900347
By:
- Matsuhisa, Naoji;
- Jiang, Ying;
- Liu, Zhiyuan;
- Chen, Geng;
- Wan, Changjin;
- Kim, Yeongin;
- Kang, Jiheong;
- Tran, Helen;
- Wu, Hung‐Chin;
- You, Insang;
- Bao, Zhenan;
- Chen, Xiaodong
Publication type:
Article
Conductive Polymer–Exoelectrogen Hybrid Bioelectrode with Improved Biofilm Formation and Extracellular Electron Transport.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900320
By:
- Zhang, Pengbo;
- Zhou, Xin;
- Qi, Ruilian;
- Gai, Panpan;
- Liu, Libing;
- Lv, Fengting;
- Wang, Shu
Publication type:
Article
Remarkably Stable, High‐Quality Semiconducting Single‐Walled Carbon Nanotube Inks for Highly Reproducible Field‐Effect Transistors.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900288
By:
- Talsma, Wytse;
- Sengrian, Aprizal Akbar;
- Salazar‐Rios, Jorge Mario;
- Duim, Herman;
- Abdu‐Aguye, Mustapha;
- Jung, Stefan;
- Allard, Sybille;
- Scherf, Ullrich;
- Loi, Maria Antonietta
Publication type:
Article
Reverse‐Offset Printing of Metal‐Nitrate‐Based Metal Oxide Semiconductor Ink for Flexible TFTs.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900272
By:
- Leppäniemi, Jaakko;
- Sneck, Asko;
- Kusaka, Yasuyuki;
- Fukuda, Nobuko;
- Alastalo, Ari
Publication type:
Article
One‐Transistor Memory Compatible with Si‐Based Technology with Multilevel Applications.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900262
By:
- Dai, Mingzhi;
- Yang, Wenwei;
- Li, Ming;
- Zhang, Lei;
- Huo, Changhe;
- Dong, Yemin;
- Webster, Thomas J.
Publication type:
Article
Nonsaturating Magnetoresistance and Nontrivial Band Topology of Type‐II Weyl Semimetal NbIrTe4.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900250
By:
- Zhou, Wei;
- Li, Bin;
- Xu, Chun Qiang;
- Delft, Maarten R.;
- Chen, Yu Ge;
- Fan, Xiao Chen;
- Qian, Bin;
- Hussey, Nigel E.;
- Xu, Xiaofeng
Publication type:
Article
Solvent Engineering for High‐Performance n‐Type Organic Electrochemical Transistors.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900249
By:
- Savva, Achilleas;
- Ohayon, David;
- Surgailis, Jokubas;
- Paterson, Alexandra F.;
- Hidalgo, Tania C.;
- Chen, Xingxing;
- Maria, Iuliana P.;
- Paulsen, Bryan D.;
- Petty, Anthony J.;
- Rivnay, Jonathan;
- McCulloch, Iain;
- Inal, Sahika
Publication type:
Article
Tuning Ni/Al Ratio to Enhance Pseudocapacitive Charge Storage Properties of Nickel–Aluminum Layered Double Hydroxide.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900215
By:
- Li, Gengnan;
- Zhang, Xianghui;
- Qiu, Dantong;
- Liu, Zilin;
- Yang, Chen;
- Cockreham, Cody B.;
- Wang, Baodong;
- Fu, Liangjie;
- Zhang, Jianghao;
- Sudduth, Berlin;
- Guo, Xiaofeng;
- Sun, Hui;
- Huang, Zhangyi;
- Qi, Jianqi;
- Sun, Junming;
- Ha, Su;
- Wang, Yong;
- Wu, Di
Publication type:
Article
Further Examination of Interconnection in Conjugated Polymers for Organic Field‐Effect Transistors.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900213
By:
- Yang, Hau‐Ren;
- Lai, Yu‐Ying;
- Lee, Jey‐Jau
Publication type:
Article
Modulation of Heavy Metal/Ferromagnetic Metal Interface for High‐Performance Spintronic Devices.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900134
By:
- Peng, Shouzhong;
- Zhu, Daoqian;
- Zhou, Jiaqi;
- Zhang, Boyu;
- Cao, Anni;
- Wang, Mengxing;
- Cai, Wenlong;
- Cao, Kaihua;
- Zhao, Weisheng
Publication type:
Article
Highly Stable Field Emission from a Tungsten Diselenide Monolayer on Zinc Oxide Nanowire by Geometrically Modulating Hot Electrons.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201970042
By:
- Chen, Yicong;
- Liu, Liwei;
- Zheng, Keshuang;
- She, Juncong;
- Deng, Shaozhi;
- Xu, Ningsheng;
- Chen, Jun
Publication type:
Article
Advances in High‐Performance Carbon‐Nanotube Thin‐Film Electronics.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900122
By:
- Si, Jia;
- Xu, Lin;
- Zhu, Maguang;
- Zhang, Zhiyong;
- Peng, Lian‐Mao
Publication type:
Article
Ambipolarity and Air Stability of Silicon Phthalocyanine Organic Thin‐Film Transistors.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900087
By:
- Melville, Owen A.;
- Grant, Trevor M.;
- Mirka, Brendan;
- Boileau, Nicholas T.;
- Park, Jeongwon;
- Lessard, Benoît H.
Publication type:
Article
MoOx/Au Schottky‐Gated Field‐Effect Transistors and Their Fast Inverters.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900086
By:
- Lan, Yang;
- Hu, Chao;
- Deng, Hui;
- Sun, Lulu;
- Yuan, Shengjie;
- Wang, Jing;
- Yu, Xiangxiang;
- Yang, Xiaokun;
- Zhou, Yinhua;
- Song, Haisheng;
- Huang, Xintang
Publication type:
Article
Switching Kinetics Control of W‐Based ReRAM Cells in Transient Operation by Interface Engineering.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201800835
By:
- Shahrabi, Elmira;
- Giovinazzo, Cecilia;
- Hadad, Mahmoud;
- LaGrange, Thomas;
- Ramos, Miguel;
- Ricciardi, Carlo;
- Leblebici, Yusuf
Publication type:
Article
Magnetic Control of Flexible Thermoelectric Devices Based on Macroscopic 3D Interconnected Nanowire Networks.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201800819
By:
- Abreu Araujo, Flavio;
- da Câmara Santa Clara Gomes, Tristan;
- Piraux, Luc
Publication type:
Article

Works matching IS 2199160X AND DT 2019 AND VI 5 AND IP 8

CNT Electronics: Advances in High‐Performance Carbon‐Nanotube Thin‐Film Electronics (Adv. Electron. Mater. 8/2019).

One‐Transistor Memory: One‐Transistor Memory Compatible with Si‐Based Technology with Multilevel Applications (Adv. Electron. Mater. 8/2019).

Hybrid Field Emitters: Highly Stable Field Emission from a Tungsten Diselenide Monolayer on Zinc Oxide Nanowire by Geometrically Modulating Hot Electrons (Adv. Electron. Mater. 8/2019).

Organic TFTs: Ambipolarity and Air Stability of Silicon Phthalocyanine Organic Thin‐Film Transistors (Adv. Electron. Mater. 8/2019).

Masthead: (Adv. Electron. Mater. 8/2019).

2D Electronics: Electronic Devices and Circuits Based on Wafer‐Scale Polycrystalline Monolayer MoS<sub>2</sub> by Chemical Vapor Deposition (Adv. Electron. Mater. 8/2019).

Thickness‐Dependent Asymmetric Potential Landscape and Polarization Relaxation in Ferroelectric Hf<sub>x</sub>Zr<sub>1−</sub><sub>x</sub>O<sub>2</sub> Thin Films through Interfacial Bound Charges.

Nonvolatile Photoelectric Memory Induced by Interfacial Charge at a Ferroelectric PZT‐Gated Black Phosphorus Transistor.

Bilayered Oxide‐Based Cognitive Memristor with Brain‐Inspired Learning Activities.

Enhancement in Performance of Transparent p‐NiO/n‐ZnO Heterojunction Ultrafast Self‐Powered Photodetector via Pyro‐Phototronic Effect.

Electronic Devices and Circuits Based on Wafer‐Scale Polycrystalline Monolayer MoS<sub>2</sub> by Chemical Vapor Deposition.

Static and Dynamic Magnetic Properties of Single‐Crystalline Yttrium Iron Garnet Films Epitaxially Grown on Three Garnet Substrates.

Electroresponsive Stretchable Liquid‐Crystal Device with Deformable Gel Network.

High‐Transconductance Stretchable Transistors Achieved by Controlled Gold Microcrack Morphology.

Conductive Polymer–Exoelectrogen Hybrid Bioelectrode with Improved Biofilm Formation and Extracellular Electron Transport.

Remarkably Stable, High‐Quality Semiconducting Single‐Walled Carbon Nanotube Inks for Highly Reproducible Field‐Effect Transistors.

Reverse‐Offset Printing of Metal‐Nitrate‐Based Metal Oxide Semiconductor Ink for Flexible TFTs.

One‐Transistor Memory Compatible with Si‐Based Technology with Multilevel Applications.

Nonsaturating Magnetoresistance and Nontrivial Band Topology of Type‐II Weyl Semimetal NbIrTe<sub>4</sub>.

Solvent Engineering for High‐Performance n‐Type Organic Electrochemical Transistors.

Tuning Ni/Al Ratio to Enhance Pseudocapacitive Charge Storage Properties of Nickel–Aluminum Layered Double Hydroxide.

Further Examination of Interconnection in Conjugated Polymers for Organic Field‐Effect Transistors.

Modulation of Heavy Metal/Ferromagnetic Metal Interface for High‐Performance Spintronic Devices.

Highly Stable Field Emission from a Tungsten Diselenide Monolayer on Zinc Oxide Nanowire by Geometrically Modulating Hot Electrons.

Advances in High‐Performance Carbon‐Nanotube Thin‐Film Electronics.

Ambipolarity and Air Stability of Silicon Phthalocyanine Organic Thin‐Film Transistors.

MoO<sub>x</sub>/Au Schottky‐Gated Field‐Effect Transistors and Their Fast Inverters.

Switching Kinetics Control of W‐Based ReRAM Cells in Transient Operation by Interface Engineering.

Magnetic Control of Flexible Thermoelectric Devices Based on Macroscopic 3D Interconnected Nanowire Networks.