Works matching IS 2199160X AND DT 2019 AND VI 5 AND IP 7

Results: 41

Highly Polarized Photoelectrical Response in vdW ZrS3 Nanoribbons.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201900419

By:

Wang, Xiaoting;
Wu, Kedi;
Blei, Mark;
Wang, Yang;
Pan, Longfei;
Zhao, Kai;
Shan, Chongxin;
Lei, Ming;
Cui, Yu;
Chen, Bin;
Wright, David;
Hu, Weida;
Tongay, Sefaattin;
Wei, Zhongming

Publication type:

Article

Voltage Control of Perpendicular Exchange Bias in Multiferroic Heterostructures.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201900192

By:

Yang, Qu;
Hu, Zhongqiang;
Zhang, Yao;
Su, Wei;
Cheng, YuXin;
Peng, Bin;
Wu, Jingen;
Zhou, Ziyao;
He, Yun;
Cui, Wanzhao;
Wang, Zhiguang;
Liu, Ming

Publication type:

Article

Magnetoelectrics: Structure, Ferroelectricity, and Magnetism in Self‐Assembled BiFeO3–CoFe2O4 Nanocomposites on (110)‐LaAlO3 Substrates (Adv. Electron. Mater. 7/2019).

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201970036

By:

Tian, Guo;
Ojha, Shuchi;
Ning, Shuai;
Gao, Xingsen;
Ross, Caroline A.

Publication type:

Article

Flexible Indium‐Tin‐Oxide Homojunction Thin‐Film Transistors with Two In‐Plane Gates on Cellulose‐Nanofiber‐Soaked Papers.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201900235

By:

Liu, Zehua;
Nie, Sha;
Luo, Jie;
Gao, Ya;
Wang, Xiangyu;
Wan, Qing

Publication type:

Article

Reduction of the Hysteresis Voltage in Atomic‐Layer‐Deposited p‐Type SnO Thin‐Film Transistors by Adopting an Al2O3 Interfacial Layer.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201900371

By:

Jang, Younjin;
Yeu, In Won;
Kim, Jun Shik;
Han, Jeong Hwan;
Choi, Jung‐Hae;
Hwang, Cheol Seong

Publication type:

Article

Electronic Nanostructures: Constructing Metal Arch Nanobridges Utilizing a Photothermal‐Induced Nanobonding Technique (Adv. Electron. Mater. 7/2019).

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201970037

By:

Ghosh, Pintu;
Lu, Jinsheng;
Luo, Hao;
Wang, Wei;
Xu, Ziquan;
Qiu, Min;
Li, Qiang

Publication type:

Article

Masthead: (Adv. Electron. Mater. 7/2019).

Published in:: Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201970035
Publication type:: Article

Ferroelectrics: Reversible Modification of Ferromagnetism through Electrically Controlled Morphology (Adv. Electron. Mater. 7/2019).

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201970033

By:

Vinai, Giovanni;
Motti, Federico;
Bonanni, Valentina;
Petrov, Aleksander Yu.;
Benedetti, Stefania;
Rinaldi, Christian;
Stella, Mattia;
Cassese, Damiano;
Prato, Stefano;
Cantoni, Matteo;
Rossi, Giorgio;
Panaccione, Giancarlo;
Torelli, Piero

Publication type:

Article

3D Electronics: 3D Sidewall Integration of Ultrahigh‐Density Silicon Nanowires for Stacked Channel Electronics (Adv. Electron. Mater. 7/2019).

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201970034

By:

Wu, Xiaoxiang;
Ma, Haiguang;
Yin, Han;
Pan, Danfeng;
Wang, Junzhuan;
Yu, Linwei;
Xu, Jun;
Shi, Yi;
Chen, Kunji

Publication type:

Article

High‐Performance and Radiation‐Hard Carbon Nanotube Complementary Static Random‐Access Memory.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201900313

By:

Zhu, Ma‐Guang;
Zhang, Zhiyong;
Peng, Lian‐Mao

Publication type:

Article

Strategy for Controlling the Electrical Conductivity of Indium Tin Oxide (ITO) Nanobranches.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201900246

By:

Lee, Dong Kyu;
Choi, Kyoung Soon;
Lee, Jaeyeong;
Kim, Youngho;
Oh, Sein;
Shin, Hojun;
Jeon, Cheolho;
Yu, Hak Ki

Publication type:

Article

Amorphous Gallium Oxide‐Based Gate‐Tunable High‐Performance Thin Film Phototransistor for Solar‐Blind Imaging.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201900389

By:

Qin, Yuan;
Long, Shibing;
He, Qiming;
Dong, Hang;
Jian, Guangzhong;
Zhang, Ying;
Hou, Xiaohu;
Tan, Pengju;
Zhang, Zhongfang;
Lu, Yingjie;
Shan, Chongxin;
Wang, Jianlu;
Hu, Weida;
Lv, Hangbing;
Liu, Qi;
Liu, Ming

Publication type:

Article

Thickness‐Dependent Electronic Transport in Ultrathin, Single Crystalline Silicon Nanomembranes.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201900232

By:

Song, Enming;
Guo, Zhongxun;
Li, Guodong;
Liao, Fuyou;
Li, Gongjin;
Du, Haina;
Schmidt, Oliver G.;
Kim, Minju;
Yi, Yeonjin;
Bao, Wenzhong;
Mei, Yongfeng

Publication type:

Article

Highly Sensitive, Stretchable Strain Sensor Based on Ag@COOH‐Functionalized CNTs for Stroke and Pronunciation Recognition.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201900227

By:

Pei, Zhen;
Liu, Yan;
Zhang, Qiang;
Zhao, Dong;
Wang, Jie;
Yuan, Zhongyun;
Zhang, Wendong;
Sang, Shengbo

Publication type:

Article

Highly Stretchable and Self‐Healable MXene/Polyvinyl Alcohol Hydrogel Electrode for Wearable Capacitive Electronic Skin.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201900285

By:

Zhang, Jiaqi;
Wan, Lijia;
Gao, Yang;
Fang, Xiaoliang;
Lu, Ting;
Pan, Likun;
Xuan, Fuzhen

Publication type:

Article

Excellent Device Performance of Sub‐5‐nm Monolayer Tellurene Transistors.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201900226

By:

Yan, Jiahuan;
Pang, Hua;
Xu, Lin;
Yang, Jie;
Quhe, Ruge;
Zhang, Xiuying;
Pan, Yuanyuan;
Shi, Bowen;
Liu, Shiqi;
Xu, Lianqiang;
Yang, Jinbo;
Pan, Feng;
Zhang, Zhiyong;
Lu, Jing

Publication type:

Article

Room‐Temperature Reversible and Nonvolatile Tunability of Electrical Properties of Cr‐Doped In2O3 Semiconductor Thin Films Gated by Ferroelectric Single Crystal and Ionic Liquid.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201900212

By:

Xu, Meng;
Yan, Jian‐Min;
Chen, Ting‐Wei;
Xu, Zhi‐Xue;
Wang, Hui;
Guo, Lei;
Gao, Guan‐Yin;
Yan, Shu‐Ying;
Wang, Fei‐Fei;
Zhang, Jin‐Xing;
Zhao, Weiyao;
Li, Xiao‐Guang;
Luo, Hao‐Su;
Zheng, Ren‐Kui

Publication type:

Article

Synthesis of Lanthanum Tungsten Oxynitride Perovskite Thin Films.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201900214

By:

Talley, Kevin R.;
Mangum, John;
Perkins, Craig L.;
Woods‐Robinson, Rachel;
Mehta, Apurva;
Gorman, Brian P.;
Brennecka, Geoff L.;
Zakutayev, Andriy

Publication type:

Article

Percolation Threshold Enables Optical Resistive‐Memory Switching and Light‐Tuneable Synaptic Learning in Segregated Nanocomposites.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201900197

By:

Jaafar, Ayoub H.;
O'Neill, Mary;
Kelly, Stephen M.;
Verrelli, Emanuele;
Kemp, Neil T.

Publication type:

Article

3D Stackable and Scalable Binary Ovonic Threshold Switch Devices with Excellent Thermal Stability and Low Leakage Current for High‐Density Cross‐Point Memory Applications.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201900196

By:

Yoo, Jongmyung;
Kim, Seong Hun;
Chekol, Solomon Amsalu;
Park, Jaehyuk;
Sung, Changhyuck;
Song, Jeonghwan;
Lee, Donghwa;
Hwang, Hyunsang

Publication type:

Article

Edge Effect on the Population of Free Carriers and Excitons in Single‐Crystal CH3NH3PbBr3 Perovskite Nanomaterials.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201900216

By:

Zhang, Zhen‐Yu;
Yu, Kuai;
Wang, Guo‐Ping

Publication type:

Article

Antiferromagnetic Piezospintronics.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201900176

By:

Liu, Zhiqi;
Feng, Zexin;
Yan, Han;
Wang, Xiaoning;
Zhou, Xiaorong;
Qin, Peixin;
Guo, Huixin;
Yu, Ronghai;
Jiang, Chengbao

Publication type:

Article

Metal‐Contact‐Induced Transition of Electrical Transport in Monolayer MoS2: From Thermally Activated to Variable‐Range Hopping.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201900042

By:

Peng, Songang;
Jin, Zhi;
Yao, Yao;
Li, Ling;
Zhang, Dayong;
Shi, Jingyuan;
Huang, Xinnan;
Niu, Jiebin;
Zhang, Yanhui;
Yu, Guanghui

Publication type:

Article

High‐Performance Visible‐Light Photodetectors built on 2D‐Nanoplate‐Assembled Large‐Scale BiI3 Films.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201900159

By:

Wei, Qi;
Wang, Yiru;
Yin, Jiang;
Xia, Yidong;
Liu, Zhiguo

Publication type:

Article

Reversible Modification of Ferromagnetism through Electrically Controlled Morphology.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201900150

By:

Vinai, Giovanni;
Motti, Federico;
Bonanni, Valentina;
Petrov, Aleksander Yu.;
Benedetti, Stefania;
Rinaldi, Christian;
Stella, Mattia;
Cassese, Damiano;
Prato, Stefano;
Cantoni, Matteo;
Rossi, Giorgio;
Panaccione, Giancarlo;
Torelli, Piero

Publication type:

Article

Fast Yet Quantum‐Efficient Few‐Layer Vertical MoS2 Photodetectors.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201900141

By:

Maeso, David;
Castellanos‐Gomez, Andres;
Agraït, Nicolas;
Rubio‐Bollinger, Gabino

Publication type:

Article

Directed Assembly of Nanoparticle Threshold‐Selector Arrays.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201900098

By:

Speckbacher, Maximilian;
Rinderle, Michael;
Kaiser, Waldemar;
Osman, Eiman A.;
Chryssikos, Domenikos;
Cattani‐Scholz, Anna;
Gibbs, Julianne M.;
Gagliardi, Alessio;
Tornow, Marc

Publication type:

Article

Manipulation of Ni Interstitials for Realizing Large Power Factor in TiNiSn‐Based Materials.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201900166

By:

Ren, Wuyang;
Zhu, Hangtian;
Mao, Jun;
You, Li;
Song, Shaowei;
Tong, Tian;
Bao, Jiming;
Luo, Jun;
Wang, Zhiming;
Ren, Zhifeng

Publication type:

Article

Light‐Emitting Transistors Based on Solution‐Processed Heterostructures of Self‐Organized Multiple‐Quantum‐Well Perovskite and Metal‐Oxide Semiconductors.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201800985

By:

Chaudhry, Mujeeb Ullah;
Wang, Nana;
Tetzner, Kornelius;
Seitkhan, Akmaral;
Miao, Yanfeng;
Sun, Yan;
Petty, Michael C.;
Anthopoulos, Thomas D.;
Wang, Jianpu;
Bradley, Donal D. C.

Publication type:

Article

Stable Metallic Enrichment in Conductive Filaments in TaOx‐Based Resistive Switches Arising from Competing Diffusive Fluxes.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201800954

By:

Ma, Yuanzhi;
Goodwill, Jonathan M.;
Li, Dasheng;
Cullen, David A.;
Poplawsky, Jonathan D.;
More, Karren L.;
Bain, James A.;
Skowronski, Marek

Publication type:

Article

Surface‐Wrinkle‐Modified Graphite Felt with High Effectiveness for Vanadium Redox Flow Batteries.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201900036

By:

Chen, Zehua;
Gao, Yu;
Zhang, Chuanxiang;
Zeng, Xianxiang;
Wu, Xiongwei

Publication type:

Article

Structural Anisotropy in Stretchable Silicon.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201900003

By:

Curtis, Sabrina M.;
Tompkins, Randy P.;
Nichols, Barbara M.;
Graziano, Milena B.;
Kierzewski, Iain;
Smith, Gabriel;
Leite, Marina S.;
Lazarus, Nathan

Publication type:

Article

Laser Transfer, Printing, and Assembly Techniques for Flexible Electronics.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201800900

By:

Bian, Jing;
Zhou, Laoboyang;
Wan, Xiaodong;
Zhu, Chen;
Yang, Biao;
Huang, YongAn

Publication type:

Article

The Motivation for and Challenges to Scaling Down Organic Field‐Effect Transistors.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201900029

By:

Chan, Paddy Kwok Leung

Publication type:

Article

Cold‐Sintered C0G Multilayer Ceramic Capacitors.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201900025

By:

Wang, Dawei;
Zhou, Di;
Song, Kaixin;
Feteira, Antonio;
Randall, Clive A.;
Reaney, Ian M.

Publication type:

Article

Structure, Ferroelectricity, and Magnetism in Self‐Assembled BiFeO3–CoFe2O4 Nanocomposites on (110)‐LaAlO3 Substrates.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201900012

By:

Tian, Guo;
Ojha, Shuchi;
Ning, Shuai;
Gao, Xingsen;
Ross, Caroline A.

Publication type:

Article

Novel Selector‐Induced Current‐Limiting Effect through Asymmetry Control for High‐Density One‐Selector–One‐Resistor Crossbar Arrays.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201800806

By:

Kim, Yumin;
Kwon, Young Jae;
Kim, Jihun;
An, Cheol Hyun;
Park, Taegyun;
Kwon, Dae Eun;
Woo, Hyo Cheon;
Kim, Hae Jin;
Yoon, Jung Ho;
Hwang, Cheol Seong

Publication type:

Article

Threshold Voltage Modulation of a Graphene–ZnO Barristor Using a Polymer Doping Process.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201800805

By:

Kim, So‐Young;
Hwang, Jeongwoon;
Kim, Yun Ji;
Hwang, Hyeon Jun;
Son, Myungwoo;
Revannath, Nikam;
Ham, Moon‐Ho;
Cho, Kyeongjae;
Lee, Byoung Hun

Publication type:

Article

Low‐Temperature Processing of Printed Field‐Effect Transistors from Sublimating‐Stabilizer Derived Oxide Nanodispersions.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201800764

By:

Divya, Mitta;
Sethuraman, Sivaramakrishnan;
Devabharathi, Nehru;
Mondal, Sandeep Kumar;
Dasgupta, Subho

Publication type:

Article

3D Sidewall Integration of Ultrahigh‐Density Silicon Nanowires for Stacked Channel Electronics.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201800627

By:

Wu, Xiaoxiang;
Ma, Haiguang;
Yin, Han;
Pan, Danfeng;
Wang, Junzhuan;
Yu, Linwei;
Xu, Jun;
Shi, Yi;
Chen, Kunji

Publication type:

Article

Constructing Metal Arch Nanobridges Utilizing a Photothermal‐Induced Nanobonding Technique.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201800807

By:

Ghosh, Pintu;
Lu, Jinsheng;
Luo, Hao;
Wang, Wei;
Xu, Ziquan;
Qiu, Min;
Li, Qiang

Publication type:

Article