Works matching IS 2199160X AND DT 2019 AND VI 5 AND IP 5

Results: 29

Organic Light‐Emitting Diode: Effect of Carrier Balance on Device Degradation of Organic Light‐Emitting Diodes Based on Thermally Activated Delayed Fluorescence Emitters (Adv. Electron. Mater. 5/2019).

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 5, p. N.PAG, doi. 10.1002/aelm.201970027

By:

Tanaka, Masaki;
Noda, Hiroki;
Nakanotani, Hajime;
Adachi, Chihaya

Publication type:

Article

Artificial Synapse: Reconfigurable Artificial Synapses between Excitatory and Inhibitory Modes Based on Single‐Gate Graphene Transistors (Adv. Electron. Mater. 5/2019).

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 5, p. N.PAG, doi. 10.1002/aelm.201970026

By:

Yao, Yao;
Huang, Xinnan;
Peng, Songang;
Zhang, Dayong;
Shi, Jingyuan;
Yu, Guanghui;
Liu, Qi;
Jin, Zhi

Publication type:

Article

Masthead: (Adv. Electron. Mater. 5/2019).

Published in:: Advanced Electronic Materials, 2019, v. 5, n. 5, p. N.PAG, doi. 10.1002/aelm.201970025
Publication type:: Article

Polymer Memory Devices: Control of Resistive Switching Voltage by Nanoparticle‐Decorated Wrinkle Interface (Adv. Electron. Mater. 5/2019).

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 5, p. N.PAG, doi. 10.1002/aelm.201970024

By:

Mao, Huiwu;
Zhou, Zhe;
Wang, Xiangjing;
Ban, Chaoyi;
Ding, Yamei;
Sun, Tao;
Yin, Yuhang;
Liu, Zhengdong;
Liu, Juqing;
Huang, Wei

Publication type:

Article

Triboelectric Nanogenerators: Magnetization‐Induced Self‐Assembling of Bendable Microneedle Arrays for Triboelectric Nanogenerators (Adv. Electron. Mater. 5/2019).

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 5, p. N.PAG, doi. 10.1002/aelm.201970023

By:

Chen, Zhipeng;
Ye, Rui;
Lee, Weihsien;
Jin, Dianwen;
Zhang, Yuanxi;
Jiang, Liyuan;
Yang, Yilin;
Ren, Lei;
Jiang, Lelun

Publication type:

Article

Asymmetric Contact‐Induced Self‐Driven Perovskite‐Microwire‐Array Photodetectors.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 5, p. N.PAG, doi. 10.1002/aelm.201900135

By:

Wu, Chun‐Yan;
Peng, Wei;
Fang, Ting;
Wang, Bin;
Xie, Chao;
Wang, Li;
Yang, Wen‐Hua;
Luo, Lin‐Bao

Publication type:

Article

Fully Printed Flexible Crossbar Memory Devices with Tip‐Enhanced Micro/Nanostructures.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 5, p. N.PAG, doi. 10.1002/aelm.201900131

By:

Pan, Qi;
Su, Meng;
Zhang, Zeying;
Cai, Zheren;
Li, Yifan;
Huang, Zhandong;
Qian, Xin;
Hu, Xiaotian;
Li, Fengyu;
Dong, Huanli;
Song, Yanlin

Publication type:

Article

Switchable Out‐of‐Plane Polarization in 2D LiAlTe2.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 5, p. N.PAG, doi. 10.1002/aelm.201900089

By:

Liu, Zhun;
Sun, Yuanhui;
Singh, David J.;
Zhang, Lijun

Publication type:

Article

Solution‐Free UV‐Based Direct Surface Modification of Oxide Films for Self‐Patterned Metal‐Oxide Thin‐Film Transistors.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 5, p. N.PAG, doi. 10.1002/aelm.201900073

By:

Lee, Woobin;
Choi, Seungbeom;
Kim, Jaeyoung;
Park, Sung Kyu;
Kim, Yong‐Hoon

Publication type:

Article

Room‐Temperature Ferromagnetism in MoTe2 by Post‐Growth Incorporation of Vanadium Impurities.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 5, p. N.PAG, doi. 10.1002/aelm.201900044

By:

Coelho, Paula Mariel;
Komsa, Hannu‐Pekka;
Lasek, Kinga;
Kalappattil, Vijaysankar;
Karthikeyan, Jeyakumar;
Phan, Manh‐Huong;
Krasheninnikov, Arkady V.;
Batzill, Matthias

Publication type:

Article

Short‐Channel Vertical Organic Field‐Effect Transistors with High On/Off Ratios.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 5, p. N.PAG, doi. 10.1002/aelm.201900041

By:

Dogan, Tamer;
Verbeek, Roy;
Kronemeijer, Auke J.;
Bobbert, Peter A.;
Gelinck, Gerwin H.;
der Wiel, Wilfred G.

Publication type:

Article

High‐Performance Partially Printed Hybrid CMOS Inverters Based on Indium‐Zinc‐Oxide and Chirality Enriched Carbon Nanotube Thin‐Film Transistors.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 5, p. N.PAG, doi. 10.1002/aelm.201900034

By:

Luo, Manman;
Xie, Huafei;
Wei, Miaomiao;
Liang, Kun;
Shao, Shuangshuang;
Zhao, Jianwen;
Gao, Tianqi;
Mo, Lixin;
Chen, Yuan;
Chen, Shujhih;
Lee, Chiayu;
Cui, Zheng

Publication type:

Article

Printable High‐Aspect Ratio and High‐Resolution Cu Grid Flexible Transparent Conductive Film with Figure of Merit over 80 000.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 5, p. N.PAG, doi. 10.1002/aelm.201800991

By:

Chen, Xiaolian;
Nie, Shuhong;
Guo, Wenrui;
Fei, Fei;
Su, Wenming;
Gu, Weibing;
Cui, Zheng

Publication type:

Article

Development of VO2‐Nanoparticle‐Based Metal–Insulator Transition Electronic Ink.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 5, p. N.PAG, doi. 10.1002/aelm.201800949

By:

Vaseem, Mohammad;
Zhen, Su;
Yang, Shuai;
Li, Weiwei;
Shamim, Atif

Publication type:

Article

The Critical Role of Electron‐Donating Thiophene Groups on the Mechanical and Thermal Properties of Donor–Acceptor Semiconducting Polymers.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 5, p. N.PAG, doi. 10.1002/aelm.201800899

By:

Zhang, Song;
Ocheje, Michael U.;
Huang, Lifeng;
Galuska, Luke;
Cao, Zhiqiang;
Luo, Shaochuan;
Cheng, Yu‐Hsuan;
Ehlenberg, Dakota;
Goodman, Renée B.;
Zhou, Dongshan;
Liu, Yi;
Chiu, Yu‐Cheng;
Azoulay, Jason D.;
Rondeau‐Gagné, Simon;
Gu, Xiaodan

Publication type:

Article

Modulation of the Work Function by the Atomic Structure of Strong Organic Electron Acceptors on H‐Si(111).

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 5, p. N.PAG, doi. 10.1002/aelm.201800891

By:

Wang, Haiyuan;
Levchenko, Sergey V.;
Schultz, Thorsten;
Koch, Norbert;
Scheffler, Matthias;
Rossi, Mariana

Publication type:

Article

Reconfigurable Artificial Synapses between Excitatory and Inhibitory Modes Based on Single‐Gate Graphene Transistors.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 5, p. N.PAG, doi. 10.1002/aelm.201800887

By:

Yao, Yao;
Huang, Xinnan;
Peng, Songang;
Zhang, Dayong;
Shi, Jingyuan;
Yu, Guanghui;
Liu, Qi;
Jin, Zhi

Publication type:

Article

High‐Performance Organic Field‐Effect Transistor with Matching Energy‐Band Alignment between Organic Semiconductor and the Charge‐Trapping Dielectric.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 5, p. N.PAG, doi. 10.1002/aelm.201800865

By:

Wang, Yiru;
Yang, Youbin;
Ding, Ping;
Wei, Qi;
Gao, Xu;
Wang, Suidong;
Liu, Chang;
Li, Aidong;
Yin, Jiang;
Xia, Yidong;
Liu, Zhiguo

Publication type:

Article

Band Structure and Spin–Orbital Texture of the (111)‐KTaO3 2D Electron Gas.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 5, p. N.PAG, doi. 10.1002/aelm.201800860

By:

Bruno, Flavio Y.;
McKeown Walker, Siobhan;
Riccò, Sara;
la Torre, Alberto;
Wang, Zhiming;
Tamai, Anna;
Kim, Timur K.;
Hoesch, Moritz;
Bahramy, Mohammad S.;
Baumberger, Felix

Publication type:

Article

Role of Oxygen Vacancies at the TiO2/HfO2 Interface in Flexible Oxide‐Based Resistive Switching Memory.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 5, p. N.PAG, doi. 10.1002/aelm.201800833

By:

Zhang, Rulin;
Huang, Hong;
Xia, Qing;
Ye, Cong;
Wei, Xiaodi;
Wang, Jinzhao;
Zhang, Li;
Zhu, Li Qiang

Publication type:

Article

Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 5, p. N.PAG, doi. 10.1002/aelm.201800832

By:

Liao, Meiyong;
Sang, Liwen;
Shimaoka, Takehiro;
Imura, Masataka;
Koizumi, Satoshi;
Koide, Yasuo

Publication type:

Article

Large‐Scale, Low‐Power Nonvolatile Memory Based on Few‐Layer MoS2 and Ultrathin Polymer Dielectrics.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 5, p. N.PAG, doi. 10.1002/aelm.201800688

By:

Yang, Sang Cheol;
Choi, Junhwan;
Jang, Byung Chul;
Hong, Woonggi;
Shim, Gi Woong;
Yang, Sang Yoon;
Im, Sung Gap;
Choi, Sung‐Yool

Publication type:

Article

Metallic Nanoparticle Inks for 3D Printing of Electronics.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 5, p. N.PAG, doi. 10.1002/aelm.201800831

By:

Tan, Hong Wei;
An, Jia;
Chua, Chee Kai;
Tran, Tuan

Publication type:

Article

Material Parameter Extraction for Complex AlScN Thin Film Using Dual Mode Resonators in Combination with Advanced Microstructural Analysis and Finite Element Modeling.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 5, p. N.PAG, doi. 10.1002/aelm.201800776

By:

Parsapour, Fazel;
Pashchenko, Vladimir;
Kurz, Nicolas;
Sandu, Cosmin Silviu;
LaGrange, Thomas;
Yamashita, Kaoru;
Lebedev, Vadim;
Muralt, Paul

Publication type:

Article

Impact of the Gate Dielectric on Contact Resistance in High‐Mobility Organic Transistors.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 5, p. N.PAG, doi. 10.1002/aelm.201800723

By:

Paterson, Alexandra F.;
Mottram, Alexander D.;
Faber, Hendrik;
Niazi, Muhammad R.;
Fei, Zhuping;
Heeney, Martin;
Anthopoulos, Thomas D.

Publication type:

Article

Electrochromic Properties of Nanostructured WO3 Thin Films Deposited by Glancing‐Angle Magnetron Sputtering.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 5, p. N.PAG, doi. 10.1002/aelm.201800713

By:

Wang, Meihan;
Chen, Yun;
Gao, Bowen;
Lei, Hao

Publication type:

Article

Effect of Carrier Balance on Device Degradation of Organic Light‐Emitting Diodes Based on Thermally Activated Delayed Fluorescence Emitters.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 5, p. N.PAG, doi. 10.1002/aelm.201800708

By:

Tanaka, Masaki;
Noda, Hiroki;
Nakanotani, Hajime;
Adachi, Chihaya

Publication type:

Article

Magnetization‐Induced Self‐Assembling of Bendable Microneedle Arrays for Triboelectric Nanogenerators.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 5, p. N.PAG, doi. 10.1002/aelm.201800785

By:

Chen, Zhipeng;
Ye, Rui;
Lee, Weihsien;
Jin, Dianwen;
Zhang, Yuanxi;
Jiang, Liyuan;
Yang, Yilin;
Ren, Lei;
Jiang, Lelun

Publication type:

Article

Control of Resistive Switching Voltage by Nanoparticle‐Decorated Wrinkle Interface.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 5, p. N.PAG, doi. 10.1002/aelm.201800503

By:

Mao, Huiwu;
Zhou, Zhe;
Wang, Xiangjing;
Ban, Chaoyi;
Ding, Yamei;
Sun, Tao;
Yin, Yuhang;
Liu, Zhengdong;
Liu, Juqing;
Huang, Wei

Publication type:

Article

Works matching IS 2199160X AND DT 2019 AND VI 5 AND IP 5

Organic Light‐Emitting Diode: Effect of Carrier Balance on Device Degradation of Organic Light‐Emitting Diodes Based on Thermally Activated Delayed Fluorescence Emitters (Adv. Electron. Mater. 5/2019).

Artificial Synapse: Reconfigurable Artificial Synapses between Excitatory and Inhibitory Modes Based on Single‐Gate Graphene Transistors (Adv. Electron. Mater. 5/2019).

Masthead: (Adv. Electron. Mater. 5/2019).

Polymer Memory Devices: Control of Resistive Switching Voltage by Nanoparticle‐Decorated Wrinkle Interface (Adv. Electron. Mater. 5/2019).

Triboelectric Nanogenerators: Magnetization‐Induced Self‐Assembling of Bendable Microneedle Arrays for Triboelectric Nanogenerators (Adv. Electron. Mater. 5/2019).

Asymmetric Contact‐Induced Self‐Driven Perovskite‐Microwire‐Array Photodetectors.

Fully Printed Flexible Crossbar Memory Devices with Tip‐Enhanced Micro/Nanostructures.

Switchable Out‐of‐Plane Polarization in 2D LiAlTe<sub>2</sub>.

Solution‐Free UV‐Based Direct Surface Modification of Oxide Films for Self‐Patterned Metal‐Oxide Thin‐Film Transistors.

Room‐Temperature Ferromagnetism in MoTe<sub>2</sub> by Post‐Growth Incorporation of Vanadium Impurities.

Short‐Channel Vertical Organic Field‐Effect Transistors with High On/Off Ratios.

High‐Performance Partially Printed Hybrid CMOS Inverters Based on Indium‐Zinc‐Oxide and Chirality Enriched Carbon Nanotube Thin‐Film Transistors.

Printable High‐Aspect Ratio and High‐Resolution Cu Grid Flexible Transparent Conductive Film with Figure of Merit over 80 000.

Development of VO<sub>2</sub>‐Nanoparticle‐Based Metal–Insulator Transition Electronic Ink.

The Critical Role of Electron‐Donating Thiophene Groups on the Mechanical and Thermal Properties of Donor–Acceptor Semiconducting Polymers.

Modulation of the Work Function by the Atomic Structure of Strong Organic Electron Acceptors on H‐Si(111).

Reconfigurable Artificial Synapses between Excitatory and Inhibitory Modes Based on Single‐Gate Graphene Transistors.

High‐Performance Organic Field‐Effect Transistor with Matching Energy‐Band Alignment between Organic Semiconductor and the Charge‐Trapping Dielectric.

Band Structure and Spin–Orbital Texture of the (111)‐KTaO<sub>3</sub> 2D Electron Gas.

Role of Oxygen Vacancies at the TiO<sub>2</sub>/HfO<sub>2</sub> Interface in Flexible Oxide‐Based Resistive Switching Memory.

Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases.

Large‐Scale, Low‐Power Nonvolatile Memory Based on Few‐Layer MoS<sub>2</sub> and Ultrathin Polymer Dielectrics.

Metallic Nanoparticle Inks for 3D Printing of Electronics.

Material Parameter Extraction for Complex AlScN Thin Film Using Dual Mode Resonators in Combination with Advanced Microstructural Analysis and Finite Element Modeling.

Impact of the Gate Dielectric on Contact Resistance in High‐Mobility Organic Transistors.

Electrochromic Properties of Nanostructured WO<sub>3</sub> Thin Films Deposited by Glancing‐Angle Magnetron Sputtering.

Effect of Carrier Balance on Device Degradation of Organic Light‐Emitting Diodes Based on Thermally Activated Delayed Fluorescence Emitters.

Magnetization‐Induced Self‐Assembling of Bendable Microneedle Arrays for Triboelectric Nanogenerators.

Control of Resistive Switching Voltage by Nanoparticle‐Decorated Wrinkle Interface.