Works matching IS 2199160X AND DT 2019 AND VI 5 AND IP 4

Results: 30

Ferroelectrics: Revealing the Effects of Trace Oxygen Vacancies on Improper Ferroelectric Manganite with In Situ Biasing (Adv. Electron. Mater. 4/2019).

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201970017

By:

Cheng, Shaobo;
Meng, Qingping;
Han, Myung‐Geun;
Deng, Shiqing;
Li, Xing;
Zhang, Qinghua;
Tan, Guotai;
Botton, Gianluigi A.;
Zhu, Yimei

Publication type:

Article

Memristors: A Spin–Orbit‐Torque Memristive Device (Adv. Electron. Mater. 4/2019).

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201970022

By:

Zhang, Shuai;
Luo, Shijiang;
Xu, Nuo;
Zou, Qiming;
Song, Min;
Yun, Jijun;
Luo, Qiang;
Guo, Zhe;
Li, Ruofan;
Tian, Weicheng;
Li, Xin;
Zhou, Hengan;
Chen, Huiming;
Zhang, Yue;
Yang, Xiaofei;
Jiang, Wanjun;
Shen, Ka;
Hong, Jeongmin;
Yuan, Zhe;
Xi, Li

Publication type:

Article

Piezoelectric Films: Outstanding Piezoelectric Performance in Lead‐Free 0.95(K,Na)(Sb,Nb)O3‐0.05(Bi,Na,K)ZrO3 Thick Films with Oriented Nanophase Coexistence (Adv. Electron. Mater. 4/2019).

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800691

By:

Wang, Yumei;
Wu, Haijun;
Qin, Xian;
Yao, Kui;
Pennycook, Stephen J.;
Tay, Francis Eng Hock

Publication type:

Article

Nonvolatile Memory: New Floating Gate Memory with Excellent Retention Characteristics (Adv. Electron. Mater. 4/2019).

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201970018

By:

Wang, Shuopei;
He, Congli;
Tang, Jian;
Lu, Xiaobo;
Shen, Cheng;
Yu, Hua;
Du, Luojun;
Li, Jiafang;
Yang, Rong;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

Masthead: (Adv. Electron. Mater. 4/2019).

Published in:: Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201970019
Publication type:: Article

Resistive Switching: Organic Memristor Utilizing Copper Phthalocyanine Nanowires with Infrared Response and Cation Regulating Properties (Adv. Electron. Mater. 4/2019).

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201970021

By:

Lv, Ziyu;
Hu, Qikun;
Xu, Zong‐Xiang;
Wang, Junjie;
Chen, Zhonghui;
Wang, Yan;
Chen, Meng;
Zhou, Kui;
Zhou, Ye;
Han, Su‐Ting

Publication type:

Article

High Thermoelectric Power Factor and ZT in TbAs:InGaAs Epitaxial Nanocomposite Material.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201900015

By:

Tew, Bo E.;
Vempati, Pratyusha;
Clinger, Laura E.;
Bomberger, Cory C.;
Halaszynski, Nicole I.;
Favaloro, Tela;
Seol, Jae H.;
Feser, Joseph P.;
Majumdar, Arun;
Shakouri, Ali;
Bowers, John E.;
Bahk, Je‐Hyeong;
Zide, Joshua M. O.

Publication type:

Article

Poly(3,4‐ethylenedioxythiophene):Poly(styrene sulfonate)/Polyethylene Oxide Electrodes with Improved Electrical and Electrochemical Properties for Soft Microactuators and Microsensors.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800948

By:

Rohtlaid, Kätlin;
Nguyen, Giao T. M.;
Soyer, Caroline;
Cattan, Eric;
Vidal, Frédéric;
Plesse, Cédric

Publication type:

Article

Transport Properties of Topological Semimetal Tungsten Carbide in the 2D Limit.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800839

By:

Wang, Cheng;
Chen, Long;
Liu, Zhen;
Liu, Zhibo;
Ma, Xiu‐Liang;
Xu, Chuan;
Cheng, Hui‐Ming;
Ren, Wencai;
Kang, Ning

Publication type:

Article

Seamless Fabrication and Threshold Engineering in Monolayer MoS2 Dual‐Gated Transistors via Hydrogen Silsesquioxane.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800888

By:

Nasr, Joseph R.;
Das, Saptarshi

Publication type:

Article

The Observation of Domain‐Wall Current Transients Along with Charge Injection at Elevated Temperatures.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800879

By:

Chen, Dongfang;
Gu, Zongquan;
Zhao, Dong‐Hui;
Bai, Zilong;
Jiang, Anquan

Publication type:

Article

High‐Performance Transparent and Flexible Triboelectric Nanogenerators Based on PDMS‐PTFE Composite Films.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800846

By:

Li, Gui‐Zhong;
Wang, Gui‐Gen;
Ye, Da‐Ming;
Zhang, Xu‐Wu;
Lin, Zhao‐Qing;
Zhou, Hai‐Ling;
Li, Fei;
Wang, Bao‐Lin;
Han, Jie‐Cai

Publication type:

Article

High‐Performance Blue Quantum Dot Light‐Emitting Diodes with Balanced Charge Injection.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800794

By:

Cheng, Tai;
Wang, Fuzhi;
Sun, Wenda;
Wang, Zhibin;
Zhang, Jin;
You, Baogui;
Li, Yang;
Hayat, Tasawar;
Alsaed, Ahmed;
Tan, Zhan'ao

Publication type:

Article

2D Single‐Layer π‐Conjugated Nickel Bis(dithiolene) Complex: A Good‐Electron‐Poor‐Phonon Thermoelectric Material.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800892

By:

Deng, Tianqi;
Yong, Xue;
Shi, Wen;
Gan, Chee Kwan;
Li, Wu;
Hippalgaonkar, Kedar;
Zheng, Jin‐Cheng;
Wang, Xiaobai;
Yang, Shuo‐Wang;
Wang, Jian‐Sheng;
Wu, Gang

Publication type:

Article

1D ZnSSe‐ZnSe Axial Heterostructure and its Application for Photodetectors.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800770

By:

Mu, Zeming;
Zheng, Qi;
Liu, Ruping;
Malik, Muhammad Wasim Iqbal;
Tang, Dongsheng;
Zhou, Weichang;
Wan, Qiang

Publication type:

Article

Nanosized ReS2 Monolayers Embedded in Nitrogen‐Doped Carbon Nanotubes for High‐Rate Capacitive Lithium Storage.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800830

By:

Lv, Yinhua;
Lei, Wanwan;
Liu, Sheng;
Zhang, Wen‐Hua

Publication type:

Article

Significantly Increased Photoresponsivity of WSe2‐Based Transistors through Hybridization with Gold‐Tetraphenylporphyrin as Efficient n‐Type Dopant.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800802

By:

Lee, Dong Seop;
Kim, Jun Young;
Shin, Dae Yong;
Lee, Yongjun;
Kim, Jeongyong;
Lee, Suk Joong;
Joo, Jinsoo

Publication type:

Article

Low‐Power, Flexible Nonvolatile Organic Transistor Memory Based on an Ultrathin Bilayer Dielectric Stack.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800799

By:

Pak, Kwanyong;
Choi, Junhwan;
Lee, Changhyeon;
Im, Sung Gap

Publication type:

Article

Experiment and Theoretical Calculation of the Surface Space Charge Region Effect on Photocurrent Generation of SnO2 Bilayer Photodiode Devices.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800679

By:

Liao, Ching‐Han;
Lee, Po‐Ming;
Lin, Chia‐Hua;
Chen, Wei‐Hao;
Chou, Chia‐Yuen;
Wu, Yen‐Ju;
Liu, Cheng‐Yi

Publication type:

Article

Revealing the Effects of Trace Oxygen Vacancies on Improper Ferroelectric Manganite with In Situ Biasing.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800827

By:

Cheng, Shaobo;
Meng, Qingping;
Han, Myung‐Geun;
Deng, Shiqing;
Li, Xing;
Zhang, Qinghua;
Tan, Guotai;
Botton, Gianluigi A.;
Zhu, Yimei

Publication type:

Article

A General Approach for Buckled Bulk Composites by Combined Biaxial Stretch and Layer‐by‐Layer Deposition and Their Electrical and Electromagnetic Applications.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800817

By:

Liu, Zhongsheng;
Wan, Fayu;
Mou, Linlin;
Jung de Andrade, Monica;
Qian, Dong;
Wang, Run;
Yin, Shougen;
Li, Kun;
Chen, Hong;
An, Baigang;
Hu, Zhizhi;
Wang, Hongzhi;
Zhu, Meifang;
Fang, Shaoli;
Liu, Zunfeng

Publication type:

Article

Interdigitated Ambipolar Active Layer for Organic Phototransistor with Balanced Charge Transport.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800652

By:

Jeong, Uijin;
Tarsoly, Gergely;
Lee, Junghyun;
Eun, Youngmoo;
Do, Junghwan;
Pyo, Seungmoon

Publication type:

Article

Organic Memristor Utilizing Copper Phthalocyanine Nanowires with Infrared Response and Cation Regulating Properties.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800793

By:

Lv, Ziyu;
Hu, Qikun;
Xu, Zong‐Xiang;
Wang, Junjie;
Chen, Zhonghui;
Wang, Yan;
Chen, Meng;
Zhou, Kui;
Zhou, Ye;
Han, Su‐Ting

Publication type:

Article

Proton‐Irradiation Effects on the Thermoelectric Properties of Flexible Bi2Te3/PEDOT:PSS Composite Films.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800786

By:

Goo, Giwon;
Anoop, Gopinathan;
Unithrattil, Sanjith;
Kim, Wan Sik;
Lee, Hye Jeong;
Kim, Hyun Bin;
Jung, Myung‐Hwan;
Park, Jongjun;
Ko, Heung Cho;
Jo, Ji Young

Publication type:

Article

A Spin–Orbit‐Torque Memristive Device.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800782

By:

Zhang, Shuai;
Luo, Shijiang;
Xu, Nuo;
Zou, Qiming;
Song, Min;
Yun, Jijun;
Luo, Qiang;
Guo, Zhe;
Li, Ruofan;
Tian, Weicheng;
Li, Xin;
Zhou, Hengan;
Chen, Huiming;
Zhang, Yue;
Yang, Xiaofei;
Jiang, Wanjun;
Shen, Ka;
Hong, Jeongmin;
Yuan, Zhe;
Xi, Li

Publication type:

Article

Interface Engineering via MoS2 Insertion Layer for Improving Resistive Switching of Conductive‐Bridging Random Access Memory.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800747

By:

Wu, Facai;
Si, Shuyao;
Cao, Peng;
Wei, Wei;
Zhao, Xiaolong;
Shi, Tuo;
Zhang, Xumeng;
Ma, Jianwei;
Cao, Rongrong;
Liao, Lei;
Tseng, Tseung‐Yuen;
Liu, Qi

Publication type:

Article

New Floating Gate Memory with Excellent Retention Characteristics.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800726

By:

Wang, Shuopei;
He, Congli;
Tang, Jian;
Lu, Xiaobo;
Shen, Cheng;
Yu, Hua;
Du, Luojun;
Li, Jiafang;
Yang, Rong;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

Wafer Scale Mapping and Statistical Analysis of Radio Frequency Characteristics in Highly Uniform CVD Graphene Transistors.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800711

By:

Tian, Mengchuan;
Hu, Ben;
Yang, Haifang;
Tang, Chengchun;
Wang, Mengfei;
Gao, Qingguo;
Xiong, Xiong;
Zhang, Zhenfeng;
Li, Tiaoyang;
Li, Xuefei;
Gu, Changzhi;
Wu, Yanqing

Publication type:

Article

Outstanding Piezoelectric Performance in Lead‐Free 0.95(K,Na)(Sb,Nb)O3‐0.05(Bi,Na,K)ZrO3 Thick Films with Oriented Nanophase Coexistence.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800691

By:

Wang, Yumei;
Wu, Haijun;
Qin, Xian;
Yao, Kui;
Pennycook, Stephen J.;
Tay, Francis Eng Hock

Publication type:

Article

Reduced Graphene Oxide Coated Silk Fabrics with Conductive Property for Wearable Electronic Textiles Application.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800648

By:

Zulan, Liu;
Zhi, Li;
Lan, Cheng;
Sihao, Chen;
Dayang, Wu;
Fangyin, Dai

Publication type:

Article

Works matching IS 2199160X AND DT 2019 AND VI 5 AND IP 4

Ferroelectrics: Revealing the Effects of Trace Oxygen Vacancies on Improper Ferroelectric Manganite with In Situ Biasing (Adv. Electron. Mater. 4/2019).

Memristors: A Spin–Orbit‐Torque Memristive Device (Adv. Electron. Mater. 4/2019).

Piezoelectric Films: Outstanding Piezoelectric Performance in Lead‐Free 0.95(K,Na)(Sb,Nb)O<sub>3</sub>‐0.05(Bi,Na,K)ZrO<sub>3</sub> Thick Films with Oriented Nanophase Coexistence (Adv. Electron. Mater. 4/2019).

Nonvolatile Memory: New Floating Gate Memory with Excellent Retention Characteristics (Adv. Electron. Mater. 4/2019).

Masthead: (Adv. Electron. Mater. 4/2019).

Resistive Switching: Organic Memristor Utilizing Copper Phthalocyanine Nanowires with Infrared Response and Cation Regulating Properties (Adv. Electron. Mater. 4/2019).

High Thermoelectric Power Factor and ZT in TbAs:InGaAs Epitaxial Nanocomposite Material.

Poly(3,4‐ethylenedioxythiophene):Poly(styrene sulfonate)/Polyethylene Oxide Electrodes with Improved Electrical and Electrochemical Properties for Soft Microactuators and Microsensors.

Transport Properties of Topological Semimetal Tungsten Carbide in the 2D Limit.

Seamless Fabrication and Threshold Engineering in Monolayer MoS<sub>2</sub> Dual‐Gated Transistors via Hydrogen Silsesquioxane.

The Observation of Domain‐Wall Current Transients Along with Charge Injection at Elevated Temperatures.

High‐Performance Transparent and Flexible Triboelectric Nanogenerators Based on PDMS‐PTFE Composite Films.

High‐Performance Blue Quantum Dot Light‐Emitting Diodes with Balanced Charge Injection.

2D Single‐Layer π‐Conjugated Nickel Bis(dithiolene) Complex: A Good‐Electron‐Poor‐Phonon Thermoelectric Material.

1D ZnSSe‐ZnSe Axial Heterostructure and its Application for Photodetectors.

Nanosized ReS<sub>2</sub> Monolayers Embedded in Nitrogen‐Doped Carbon Nanotubes for High‐Rate Capacitive Lithium Storage.

Significantly Increased Photoresponsivity of WSe<sub>2</sub>‐Based Transistors through Hybridization with Gold‐Tetraphenylporphyrin as Efficient n‐Type Dopant.

Low‐Power, Flexible Nonvolatile Organic Transistor Memory Based on an Ultrathin Bilayer Dielectric Stack.

Experiment and Theoretical Calculation of the Surface Space Charge Region Effect on Photocurrent Generation of SnO<sub>2</sub> Bilayer Photodiode Devices.

Revealing the Effects of Trace Oxygen Vacancies on Improper Ferroelectric Manganite with In Situ Biasing.

A General Approach for Buckled Bulk Composites by Combined Biaxial Stretch and Layer‐by‐Layer Deposition and Their Electrical and Electromagnetic Applications.

Interdigitated Ambipolar Active Layer for Organic Phototransistor with Balanced Charge Transport.

Organic Memristor Utilizing Copper Phthalocyanine Nanowires with Infrared Response and Cation Regulating Properties.

Proton‐Irradiation Effects on the Thermoelectric Properties of Flexible Bi<sub>2</sub>Te<sub>3</sub>/PEDOT:PSS Composite Films.

A Spin–Orbit‐Torque Memristive Device.

Interface Engineering via MoS<sub>2</sub> Insertion Layer for Improving Resistive Switching of Conductive‐Bridging Random Access Memory.

New Floating Gate Memory with Excellent Retention Characteristics.

Wafer Scale Mapping and Statistical Analysis of Radio Frequency Characteristics in Highly Uniform CVD Graphene Transistors.

Outstanding Piezoelectric Performance in Lead‐Free 0.95(K,Na)(Sb,Nb)O<sub>3</sub>‐0.05(Bi,Na,K)ZrO<sub>3</sub> Thick Films with Oriented Nanophase Coexistence.

Reduced Graphene Oxide Coated Silk Fabrics with Conductive Property for Wearable Electronic Textiles Application.