Works matching IS 2199160X AND DT 2019 AND VI 5 AND IP 4

Results: 30

Resistive Switching: Organic Memristor Utilizing Copper Phthalocyanine Nanowires with Infrared Response and Cation Regulating Properties (Adv. Electron. Mater. 4/2019).
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201970021
By:
- Lv, Ziyu;
- Hu, Qikun;
- Xu, Zong‐Xiang;
- Wang, Junjie;
- Chen, Zhonghui;
- Wang, Yan;
- Chen, Meng;
- Zhou, Kui;
- Zhou, Ye;
- Han, Su‐Ting
Publication type:
Article
Memristors: A Spin–Orbit‐Torque Memristive Device (Adv. Electron. Mater. 4/2019).
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201970022
By:
- Zhang, Shuai;
- Luo, Shijiang;
- Xu, Nuo;
- Zou, Qiming;
- Song, Min;
- Yun, Jijun;
- Luo, Qiang;
- Guo, Zhe;
- Li, Ruofan;
- Tian, Weicheng;
- Li, Xin;
- Zhou, Hengan;
- Chen, Huiming;
- Zhang, Yue;
- Yang, Xiaofei;
- Jiang, Wanjun;
- Shen, Ka;
- Hong, Jeongmin;
- Yuan, Zhe;
- Xi, Li
Publication type:
Article
Piezoelectric Films: Outstanding Piezoelectric Performance in Lead‐Free 0.95(K,Na)(Sb,Nb)O3‐0.05(Bi,Na,K)ZrO3 Thick Films with Oriented Nanophase Coexistence (Adv. Electron. Mater. 4/2019).
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800691
By:
- Wang, Yumei;
- Wu, Haijun;
- Qin, Xian;
- Yao, Kui;
- Pennycook, Stephen J.;
- Tay, Francis Eng Hock
Publication type:
Article
Masthead: (Adv. Electron. Mater. 4/2019).
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201970019
Publication type:
Article
Nonvolatile Memory: New Floating Gate Memory with Excellent Retention Characteristics (Adv. Electron. Mater. 4/2019).
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201970018
By:
- Wang, Shuopei;
- He, Congli;
- Tang, Jian;
- Lu, Xiaobo;
- Shen, Cheng;
- Yu, Hua;
- Du, Luojun;
- Li, Jiafang;
- Yang, Rong;
- Shi, Dongxia;
- Zhang, Guangyu
Publication type:
Article
Ferroelectrics: Revealing the Effects of Trace Oxygen Vacancies on Improper Ferroelectric Manganite with In Situ Biasing (Adv. Electron. Mater. 4/2019).
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201970017
By:
- Cheng, Shaobo;
- Meng, Qingping;
- Han, Myung‐Geun;
- Deng, Shiqing;
- Li, Xing;
- Zhang, Qinghua;
- Tan, Guotai;
- Botton, Gianluigi A.;
- Zhu, Yimei
Publication type:
Article
High Thermoelectric Power Factor and ZT in TbAs:InGaAs Epitaxial Nanocomposite Material.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201900015
By:
- Tew, Bo E.;
- Vempati, Pratyusha;
- Clinger, Laura E.;
- Bomberger, Cory C.;
- Halaszynski, Nicole I.;
- Favaloro, Tela;
- Seol, Jae H.;
- Feser, Joseph P.;
- Majumdar, Arun;
- Shakouri, Ali;
- Bowers, John E.;
- Bahk, Je‐Hyeong;
- Zide, Joshua M. O.
Publication type:
Article
Poly(3,4‐ethylenedioxythiophene):Poly(styrene sulfonate)/Polyethylene Oxide Electrodes with Improved Electrical and Electrochemical Properties for Soft Microactuators and Microsensors.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800948
By:
- Rohtlaid, Kätlin;
- Nguyen, Giao T. M.;
- Soyer, Caroline;
- Cattan, Eric;
- Vidal, Frédéric;
- Plesse, Cédric
Publication type:
Article
2D Single‐Layer π‐Conjugated Nickel Bis(dithiolene) Complex: A Good‐Electron‐Poor‐Phonon Thermoelectric Material.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800892
By:
- Deng, Tianqi;
- Yong, Xue;
- Shi, Wen;
- Gan, Chee Kwan;
- Li, Wu;
- Hippalgaonkar, Kedar;
- Zheng, Jin‐Cheng;
- Wang, Xiaobai;
- Yang, Shuo‐Wang;
- Wang, Jian‐Sheng;
- Wu, Gang
Publication type:
Article
Seamless Fabrication and Threshold Engineering in Monolayer MoS2 Dual‐Gated Transistors via Hydrogen Silsesquioxane.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800888
By:
- Nasr, Joseph R.;
- Das, Saptarshi
Publication type:
Article
The Observation of Domain‐Wall Current Transients Along with Charge Injection at Elevated Temperatures.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800879
By:
- Chen, Dongfang;
- Gu, Zongquan;
- Zhao, Dong‐Hui;
- Bai, Zilong;
- Jiang, Anquan
Publication type:
Article
High‐Performance Transparent and Flexible Triboelectric Nanogenerators Based on PDMS‐PTFE Composite Films.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800846
By:
- Li, Gui‐Zhong;
- Wang, Gui‐Gen;
- Ye, Da‐Ming;
- Zhang, Xu‐Wu;
- Lin, Zhao‐Qing;
- Zhou, Hai‐Ling;
- Li, Fei;
- Wang, Bao‐Lin;
- Han, Jie‐Cai
Publication type:
Article
Transport Properties of Topological Semimetal Tungsten Carbide in the 2D Limit.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800839
By:
- Wang, Cheng;
- Chen, Long;
- Liu, Zhen;
- Liu, Zhibo;
- Ma, Xiu‐Liang;
- Xu, Chuan;
- Cheng, Hui‐Ming;
- Ren, Wencai;
- Kang, Ning
Publication type:
Article
A General Approach for Buckled Bulk Composites by Combined Biaxial Stretch and Layer‐by‐Layer Deposition and Their Electrical and Electromagnetic Applications.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800817
By:
- Liu, Zhongsheng;
- Wan, Fayu;
- Mou, Linlin;
- Jung de Andrade, Monica;
- Qian, Dong;
- Wang, Run;
- Yin, Shougen;
- Li, Kun;
- Chen, Hong;
- An, Baigang;
- Hu, Zhizhi;
- Wang, Hongzhi;
- Zhu, Meifang;
- Fang, Shaoli;
- Liu, Zunfeng
Publication type:
Article
Significantly Increased Photoresponsivity of WSe2‐Based Transistors through Hybridization with Gold‐Tetraphenylporphyrin as Efficient n‐Type Dopant.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800802
By:
- Lee, Dong Seop;
- Kim, Jun Young;
- Shin, Dae Yong;
- Lee, Yongjun;
- Kim, Jeongyong;
- Lee, Suk Joong;
- Joo, Jinsoo
Publication type:
Article
Revealing the Effects of Trace Oxygen Vacancies on Improper Ferroelectric Manganite with In Situ Biasing.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800827
By:
- Cheng, Shaobo;
- Meng, Qingping;
- Han, Myung‐Geun;
- Deng, Shiqing;
- Li, Xing;
- Zhang, Qinghua;
- Tan, Guotai;
- Botton, Gianluigi A.;
- Zhu, Yimei
Publication type:
Article
Nanosized ReS2 Monolayers Embedded in Nitrogen‐Doped Carbon Nanotubes for High‐Rate Capacitive Lithium Storage.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800830
By:
- Lv, Yinhua;
- Lei, Wanwan;
- Liu, Sheng;
- Zhang, Wen‐Hua
Publication type:
Article
Low‐Power, Flexible Nonvolatile Organic Transistor Memory Based on an Ultrathin Bilayer Dielectric Stack.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800799
By:
- Pak, Kwanyong;
- Choi, Junhwan;
- Lee, Changhyeon;
- Im, Sung Gap
Publication type:
Article
High‐Performance Blue Quantum Dot Light‐Emitting Diodes with Balanced Charge Injection.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800794
By:
- Cheng, Tai;
- Wang, Fuzhi;
- Sun, Wenda;
- Wang, Zhibin;
- Zhang, Jin;
- You, Baogui;
- Li, Yang;
- Hayat, Tasawar;
- Alsaed, Ahmed;
- Tan, Zhan'ao
Publication type:
Article
Organic Memristor Utilizing Copper Phthalocyanine Nanowires with Infrared Response and Cation Regulating Properties.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800793
By:
- Lv, Ziyu;
- Hu, Qikun;
- Xu, Zong‐Xiang;
- Wang, Junjie;
- Chen, Zhonghui;
- Wang, Yan;
- Chen, Meng;
- Zhou, Kui;
- Zhou, Ye;
- Han, Su‐Ting
Publication type:
Article
Proton‐Irradiation Effects on the Thermoelectric Properties of Flexible Bi2Te3/PEDOT:PSS Composite Films.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800786
By:
- Goo, Giwon;
- Anoop, Gopinathan;
- Unithrattil, Sanjith;
- Kim, Wan Sik;
- Lee, Hye Jeong;
- Kim, Hyun Bin;
- Jung, Myung‐Hwan;
- Park, Jongjun;
- Ko, Heung Cho;
- Jo, Ji Young
Publication type:
Article
A Spin–Orbit‐Torque Memristive Device.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800782
By:
- Zhang, Shuai;
- Luo, Shijiang;
- Xu, Nuo;
- Zou, Qiming;
- Song, Min;
- Yun, Jijun;
- Luo, Qiang;
- Guo, Zhe;
- Li, Ruofan;
- Tian, Weicheng;
- Li, Xin;
- Zhou, Hengan;
- Chen, Huiming;
- Zhang, Yue;
- Yang, Xiaofei;
- Jiang, Wanjun;
- Shen, Ka;
- Hong, Jeongmin;
- Yuan, Zhe;
- Xi, Li
Publication type:
Article
1D ZnSSe‐ZnSe Axial Heterostructure and its Application for Photodetectors.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800770
By:
- Mu, Zeming;
- Zheng, Qi;
- Liu, Ruping;
- Malik, Muhammad Wasim Iqbal;
- Tang, Dongsheng;
- Zhou, Weichang;
- Wan, Qiang
Publication type:
Article
Interface Engineering via MoS2 Insertion Layer for Improving Resistive Switching of Conductive‐Bridging Random Access Memory.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800747
By:
- Wu, Facai;
- Si, Shuyao;
- Cao, Peng;
- Wei, Wei;
- Zhao, Xiaolong;
- Shi, Tuo;
- Zhang, Xumeng;
- Ma, Jianwei;
- Cao, Rongrong;
- Liao, Lei;
- Tseng, Tseung‐Yuen;
- Liu, Qi
Publication type:
Article
New Floating Gate Memory with Excellent Retention Characteristics.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800726
By:
- Wang, Shuopei;
- He, Congli;
- Tang, Jian;
- Lu, Xiaobo;
- Shen, Cheng;
- Yu, Hua;
- Du, Luojun;
- Li, Jiafang;
- Yang, Rong;
- Shi, Dongxia;
- Zhang, Guangyu
Publication type:
Article
Wafer Scale Mapping and Statistical Analysis of Radio Frequency Characteristics in Highly Uniform CVD Graphene Transistors.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800711
By:
- Tian, Mengchuan;
- Hu, Ben;
- Yang, Haifang;
- Tang, Chengchun;
- Wang, Mengfei;
- Gao, Qingguo;
- Xiong, Xiong;
- Zhang, Zhenfeng;
- Li, Tiaoyang;
- Li, Xuefei;
- Gu, Changzhi;
- Wu, Yanqing
Publication type:
Article
Outstanding Piezoelectric Performance in Lead‐Free 0.95(K,Na)(Sb,Nb)O3‐0.05(Bi,Na,K)ZrO3 Thick Films with Oriented Nanophase Coexistence.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800691
By:
- Wang, Yumei;
- Wu, Haijun;
- Qin, Xian;
- Yao, Kui;
- Pennycook, Stephen J.;
- Tay, Francis Eng Hock
Publication type:
Article
Experiment and Theoretical Calculation of the Surface Space Charge Region Effect on Photocurrent Generation of SnO2 Bilayer Photodiode Devices.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800679
By:
- Liao, Ching‐Han;
- Lee, Po‐Ming;
- Lin, Chia‐Hua;
- Chen, Wei‐Hao;
- Chou, Chia‐Yuen;
- Wu, Yen‐Ju;
- Liu, Cheng‐Yi
Publication type:
Article
Interdigitated Ambipolar Active Layer for Organic Phototransistor with Balanced Charge Transport.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800652
By:
- Jeong, Uijin;
- Tarsoly, Gergely;
- Lee, Junghyun;
- Eun, Youngmoo;
- Do, Junghwan;
- Pyo, Seungmoon
Publication type:
Article
Reduced Graphene Oxide Coated Silk Fabrics with Conductive Property for Wearable Electronic Textiles Application.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800648
By:
- Zulan, Liu;
- Zhi, Li;
- Lan, Cheng;
- Sihao, Chen;
- Dayang, Wu;
- Fangyin, Dai
Publication type:
Article

Works matching IS 2199160X AND DT 2019 AND VI 5 AND IP 4

Resistive Switching: Organic Memristor Utilizing Copper Phthalocyanine Nanowires with Infrared Response and Cation Regulating Properties (Adv. Electron. Mater. 4/2019).

Memristors: A Spin–Orbit‐Torque Memristive Device (Adv. Electron. Mater. 4/2019).

Piezoelectric Films: Outstanding Piezoelectric Performance in Lead‐Free 0.95(K,Na)(Sb,Nb)O<sub>3</sub>‐0.05(Bi,Na,K)ZrO<sub>3</sub> Thick Films with Oriented Nanophase Coexistence (Adv. Electron. Mater. 4/2019).

Masthead: (Adv. Electron. Mater. 4/2019).

Nonvolatile Memory: New Floating Gate Memory with Excellent Retention Characteristics (Adv. Electron. Mater. 4/2019).

Ferroelectrics: Revealing the Effects of Trace Oxygen Vacancies on Improper Ferroelectric Manganite with In Situ Biasing (Adv. Electron. Mater. 4/2019).

High Thermoelectric Power Factor and ZT in TbAs:InGaAs Epitaxial Nanocomposite Material.

Poly(3,4‐ethylenedioxythiophene):Poly(styrene sulfonate)/Polyethylene Oxide Electrodes with Improved Electrical and Electrochemical Properties for Soft Microactuators and Microsensors.

2D Single‐Layer π‐Conjugated Nickel Bis(dithiolene) Complex: A Good‐Electron‐Poor‐Phonon Thermoelectric Material.

Seamless Fabrication and Threshold Engineering in Monolayer MoS<sub>2</sub> Dual‐Gated Transistors via Hydrogen Silsesquioxane.

The Observation of Domain‐Wall Current Transients Along with Charge Injection at Elevated Temperatures.

High‐Performance Transparent and Flexible Triboelectric Nanogenerators Based on PDMS‐PTFE Composite Films.

Transport Properties of Topological Semimetal Tungsten Carbide in the 2D Limit.

A General Approach for Buckled Bulk Composites by Combined Biaxial Stretch and Layer‐by‐Layer Deposition and Their Electrical and Electromagnetic Applications.

Significantly Increased Photoresponsivity of WSe<sub>2</sub>‐Based Transistors through Hybridization with Gold‐Tetraphenylporphyrin as Efficient n‐Type Dopant.

Revealing the Effects of Trace Oxygen Vacancies on Improper Ferroelectric Manganite with In Situ Biasing.

Nanosized ReS<sub>2</sub> Monolayers Embedded in Nitrogen‐Doped Carbon Nanotubes for High‐Rate Capacitive Lithium Storage.

Low‐Power, Flexible Nonvolatile Organic Transistor Memory Based on an Ultrathin Bilayer Dielectric Stack.

High‐Performance Blue Quantum Dot Light‐Emitting Diodes with Balanced Charge Injection.

Organic Memristor Utilizing Copper Phthalocyanine Nanowires with Infrared Response and Cation Regulating Properties.

Proton‐Irradiation Effects on the Thermoelectric Properties of Flexible Bi<sub>2</sub>Te<sub>3</sub>/PEDOT:PSS Composite Films.

A Spin–Orbit‐Torque Memristive Device.

1D ZnSSe‐ZnSe Axial Heterostructure and its Application for Photodetectors.

Interface Engineering via MoS<sub>2</sub> Insertion Layer for Improving Resistive Switching of Conductive‐Bridging Random Access Memory.

New Floating Gate Memory with Excellent Retention Characteristics.

Wafer Scale Mapping and Statistical Analysis of Radio Frequency Characteristics in Highly Uniform CVD Graphene Transistors.

Outstanding Piezoelectric Performance in Lead‐Free 0.95(K,Na)(Sb,Nb)O<sub>3</sub>‐0.05(Bi,Na,K)ZrO<sub>3</sub> Thick Films with Oriented Nanophase Coexistence.

Experiment and Theoretical Calculation of the Surface Space Charge Region Effect on Photocurrent Generation of SnO<sub>2</sub> Bilayer Photodiode Devices.

Interdigitated Ambipolar Active Layer for Organic Phototransistor with Balanced Charge Transport.

Reduced Graphene Oxide Coated Silk Fabrics with Conductive Property for Wearable Electronic Textiles Application.