Works matching IS 2199160X AND DT 2019 AND VI 5 AND IP 2

Results: 43

Organic Memory Devices: 9,10‐Imide‐Pyrene‐Fused Pyrazaacenes (IPPA) as N‐Type Doping Materials for High‐Performance Nonvolatile Organic Field Effect Transistor Memory Devices (Adv. Electron. Mater. 2/2019).

Published in:

2019

By:

Wu, Ze‐Hua;
Sun, Wen‐Jing;
Tian, Hu‐Hu;
Yu, Ze‐Feng;
Guo, Rui‐Xue;
Shao, Xiangfeng;
Zhang, Hao‐Li

Publication type:

Cover Art

Masthead: (Adv. Electron. Mater. 2/2019).

Published in:: Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201970009
Publication type:: Article

Nonvolatile Memory: Ultrafast Multilevel Switching in Au/YIG/n‐Si RRAM (Adv. Electron. Mater. 2/2019).

Published in:

2019

By:

Chen, Zhiwei;
Huang, Weichuan;
Zhao, Wenbo;
Hou, Chuangming;
Ma, Chao;
Liu, Chuanchuan;
Sun, Haoyang;
Yin, Yuewei;
Li, Xiaoguang

Publication type:

Cover Art

Electrochemical Sensors: 3D Printed Disposable Wireless Ion Sensors with Biocompatible Cellulose Composites (Adv. Electron. Mater. 2/2019).

Published in:

2019

By:

Kim, Taeil;
Bao, Chao;
Kim, Woo Soo;
Hausmann, Michael;
Siqueira, Gilberto;
Zimmermann, Tanja

Publication type:

Cover Art

3D Printed Disposable Wireless Ion Sensors with Biocompatible Cellulose Composites.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800778

By:

Kim, Taeil;
Bao, Chao;
Kim, Woo Soo;
Hausmann, Michael;
Siqueira, Gilberto;
Zimmermann, Tanja

Publication type:

Article

Releasable High‐Performance GaAs Schottky Diodes for Gigahertz Operation of Flexible Bridge Rectifier.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800772

By:

Shin, Joo Hwan;
Kim, Tae‐il;
Jung, Yei Hwan;
Zhang, Huilong;
Lee, In‐Kyu;
Ma, Zhenqiang

Publication type:

Article

Over 6% Certified Sb2(S,Se)3 Solar Cells Fabricated via In Situ Hydrothermal Growth and Postselenization.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800683

By:

Wang, Weihuang;
Yao, Liquan;
Huang, Xiaojuan;
Chen, Guilin;
Chen, Shuiyuan;
Huang, Zhigao;
Wang, Xiaomin;
Chen, Tao;
Zhu, Changfei;
Zhang, Yi

Publication type:

Article

Doping Effect on Conducting Polymer‐Metal Schottky DC Generators.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800675

By:

Shao, Hao;
Fang, Jian;
Wang, Hongxia;
Zhou, Hua;
Niu, Haitao;
Chen, Fanyan;
Yan, Guilong;
Fu, Sida;
Cao, Yuying;
Lin, Tong

Publication type:

Article

Improved Hole Injection into Perovskite Light‐Emitting Diodes Using A Black Phosphorus Interlayer.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800687

By:

Ricciardulli, Antonio Gaetano;
Kotadiya, Naresh B.;
Wetzelaer, Gert‐Jan A. H.;
Blom, Paul W. M.;
Yang, Sheng;
Feng, Xinliang

Publication type:

Article

Recent Advances in Black Phosphorus‐Based Electronic Devices.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800666

By:

Tan, Wee Chong;
Wang, Lin;
Feng, Xuewei;
Chen, Li;
Huang, Li;
Huang, Xin;
Ang, Kah‐Wee

Publication type:

Article

Enhanced Switching Stability in Forming‐Free SiNx Resistive Random Access Memory Devices with Low Power Consumptions Based on Local Pt Doping in a Stacked Structure.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800739

By:

Jiang, Peng Fei;
Gao, Hai Xia;
Zhang, Zhen Fei;
Ma, Xiao Hua;
Yang, Yin Tang;
Yang, Mei

Publication type:

Article

Mechanisms for Enhanced State Retention and Stability in Redox‐Gated Organic Neuromorphic Devices.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800686

By:

Keene, Scott Tom;
Melianas, Armantas;
Salleo, Alberto;
van de Burgt, Yoeri

Publication type:

Article

A Fully Transparent, Flexible, Sensitive, and Visible‐Blind Ultraviolet Sensor Based on Carbon Nanotube–Graphene Hybrid.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800737

By:

Pyo, Soonjae;
Kim, Jongbaeg;
Choi, Jungwook

Publication type:

Article

Phase‐Field Study of Electromechanical Coupling in Lead‐Free Relaxor/Ferroelectric‐Layered Composites.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800710

By:

Wang, Shuai;
Xu, Bai‐Xiang;
Ayrikyan, Azatuhi;
Webber, Kyle G.;
Zhang, Haibo

Publication type:

Article

Hole Conduction of Tungsten Diselenide Crystalline Transistors by Niobium Dopant.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800695

By:

Chu, Dongil;
Kim, Eun Kyu

Publication type:

Article

Switchable Two‐Terminal Transparent Optoelectronic Devices Based on 2D Perovskite.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800662

By:

Kumar, Mohit;
Patel, Malkeshkumar;
Kim, Joondong;
Kim, Hong‐Sik;
Park, Dae Young;
Jeong, Mun Seok

Publication type:

Article

Hybrid‐RRAM toward Next Generation of Nonvolatile Memory: Coupling of Oxygen Vacancies and Metal Ions.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800658

By:

Sassine, Gilbert;
Nail, Cécile;
Blaise, Philippe;
Sklenard, Benoit;
Bernard, Mathieu;
Gassilloud, Rémy;
Marty, Aurélie;
Veillerot, Marc;
Nowak, Etienne;
Molas, Gabriel;
Vallée, Christophe

Publication type:

Article

Intrinsically Stretchable Resistive Switching Memory Enabled by Combining a Liquid Metal–Based Soft Electrode and a Metal–Organic Framework Insulator.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800655

By:

Yi, Xiaohui;
Shang, Jie;
Yang, Huali;
Xue, Wuhong;
Dhanapal, Pravarthana;
Liu, Gang;
Li, Run‐Wei;
Yu, Zhe;
Niu, Xuhong;
Mao, Guoyong;
Yin, Tenghao;
Qu, Shaoxing

Publication type:

Article

Highly Conducting, Transparent PEDOT:PSS Polymer Electrodes from Post‐Treatment with Weak and Strong Acids.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800654

By:

Bießmann, Lorenz;
Saxena, Nitin;
Hohn, Nuri;
Müller‐Buschbaum, Peter;
Hossain, Md Asjad;
Veinot, Jonathan G. C.

Publication type:

Article

Repeatable Room Temperature Negative Differential Resistance in AlN/GaN Resonant Tunneling Diodes Grown on Sapphire.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800651

By:

Chen, Zhaoying;
Wang, Tao;
Yang, Liuyun;
Sheng, Bowen;
Lin, Shaojun;
Rong, Xin;
Wang, Ping;
Ge, Weikun;
Shen, Bo;
Wang, Xinqiang;
Wang, Ding;
Liu, Yinong;
Su, Juan;
Shi, Xiangyang;
Tan, Wei;
Zhang, Jian

Publication type:

Article

Silver Telluride Nanowire Assembly for High‐Performance Flexible Thermoelectric Film and Its Application in Self‐Powered Temperature Sensor.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800612

By:

Zeng, Xiaoliang;
Yan, Changzeng;
Ren, Linlin;
Zhang, Tao;
Zhou, Fengrui;
Liang, Xianwen;
Wang, Ning;
Sun, Rong;
Xu, Jian‐Bin;
Wong, Ching‐Ping

Publication type:

Article

Suppressing Ambipolar Characteristics of WSe2 Field Effect Transistors Using Graphene Oxide.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800608

By:

Oh, Hye Min;
Park, Chulho;
Duong, Ngoc Thanh;
Bang, Seungho;
Yun, Seok Joon;
Jeong, Mun Seok

Publication type:

Article

Large‐Area All‐Printed Temperature Sensing Surfaces Using Novel Composite Thermistor Materials.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800605

By:

Zalar, Peter;
Sweelssen, Jorgen;
Rentrop, Corné;
Smits, Edsger C. P.;
Katerinopoulou, Dimitra;
Groen, Pim;
Gelinck, Gerwin H.;
van den Brand, Jeroen;
Kiriakidis, George

Publication type:

Article

9,10‐Imide‐Pyrene‐Fused Pyrazaacenes (IPPA) as N‐Type Doping Materials for High‐Performance Nonvolatile Organic Field Effect Transistor Memory Devices.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800598

By:

Wu, Ze‐Hua;
Sun, Wen‐Jing;
Tian, Hu‐Hu;
Yu, Ze‐Feng;
Guo, Rui‐Xue;
Shao, Xiangfeng;
Zhang, Hao‐Li

Publication type:

Article

Substrate‐Wide Confined Shear Alignment of Carbon Nanotubes for Thin Film Transistors.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800593

By:

Jinkins, Katherine R.;
Jacobberger, Robert M.;
Arnold, Michael S.;
Chan, Jason;
Berson, Arganthaël

Publication type:

Article

Probing the Electronic Properties of Monolayer MoS2 via Interaction with Molecular Hydrogen.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800591

By:

Rezende, Natália P.;
Cadore, Alisson R.;
Gadelha, Andreij C.;
Pereira, Cíntia L.;
Ornelas, Vinícius;
Malachias, Angelo;
Campos, Leonardo C.;
Lacerda, Rodrigo G.;
Watanabe, Kenji;
Taniguchi, Takashi;
Ferlauto, André S.

Publication type:

Article

Conducting Bridge Resistive Switching Behaviors in Cubic MAPbI3, Orthorhombic RbPbI3, and Their Mixtures.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800586

By:

Lee, SangMyeong;
Jeon, Jae Bum;
Kim, Byeong Jo;
Jung, Hyun Suk;
Choi, Jaeho;
Han, Ji Su;
Kim, Taemin Ludvic;
Jang, Ho Won

Publication type:

Article

Transparent and Flexible Thin‐Film Transistors with High Performance Prepared at Ultralow Temperatures by Atomic Layer Deposition.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800583

By:

Chen, Xue;
Zhang, Guozhen;
Wan, Jiaxian;
Guo, Tao;
Li, Lei;
Yang, Yanpeng;
Liu, Chang;
Wu, Hao

Publication type:

Article

Self‐Powered MoS2–PDPP3T Heterotransistor‐Based Broadband Photodetectors.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800580

By:

Sun, Mengxing;
Xie, Dan;
Sun, Yilin;
Ren, Tianling;
Yang, Pengfei;
Zhang, Yanfeng;
Xu, Jianlong

Publication type:

Article

The Role of Weak Molecular Dopants in Enhancing the Performance of Solution‐Processed Organic Field‐Effect Transistors.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800547

By:

Wang, Zongrui;
Chen, Wangqiao;
Huang, Yinjuan;
Yao, Changjiang;
Zhang, Qichun;
Zou, Ye

Publication type:

Article

A True Random Number Generator Using Threshold‐Switching‐Based Memristors in an Efficient Circuit Design.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800543

By:

Woo, Kyung Seok;
Wang, Yongmin;
Kim, Jihun;
Kim, Yumin;
Kwon, Young Jae;
Yoon, Jung Ho;
Kim, Woohyun;
Hwang, Cheol Seong

Publication type:

Article

Low‐Voltage, High‐Frequency Organic Transistors and Unipolar and Complementary Ring Oscillators on Paper.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800453

By:

Klauk, Hagen;
Kraft, Ulrike;
Weber, Edwin;
Murmann, Boris;
Zaki, Tarek;
Letzkus, Florian;
Burghartz, Joachim N.

Publication type:

Article

Nucleation‐Limited Ferroelectric Orthorhombic Phase Formation in Hf0.5Zr0.5O2 Thin Films.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800436

By:

Lee, Young Hwan;
Hyun, Seung Dam;
Kim, Hae Jin;
Kim, Jun Shik;
Yoo, Chanyoung;
Moon, Taehwan;
Kim, Keum Do;
Park, Hyeon Woo;
Lee, Yong Bin;
Kim, Baek Su;
Roh, Jangho;
Hwang, Cheol Seong;
Park, Min Hyuk

Publication type:

Article

Semiconducting Single‐Walled Carbon Nanotubes or Very Rigid Conjugated Polymers: A Comparison.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800514

By:

Zaumseil, Jana

Publication type:

Article

Semiconducting Polymer Thin Films Used in Organic Solar Cells: A Scanning Tunneling Microscopy Study.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800499

By:

Caballero‐Quintana, Irving;
Maldonado, José‐Luis;
Meneses‐Nava, Marco‐Antonio;
Barbosa‐García, Oracio;
Valenzuela‐Benavides, José;
Bousseksou, Azzedine

Publication type:

Article

High Bipolar Conductivity and Robust In‐Plane Spontaneous Electric Polarization in Selenene.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800475

By:

Wang, Dan;
He, Meng‐Dong;
Wang, Xin‐Jun;
Tang, Li‐Ming;
Jiang, Xing‐Xing;
Tan, Jie‐Yao;
Chen, Ke‐Qiu

Publication type:

Article

A Stretchable‐Hybrid Low‐Power Monolithic ECG Patch with Microfluidic Liquid‐Metal Interconnects and Stretchable Carbon‐Black Nanocomposite Electrodes for Wearable Heart Monitoring.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800463

By:

Li, Yida;
Luo, Yuxuan;
Nayak, Suryakanta;
Chichvarina, Olga;
Zamburg, Evgeny;
Zhang, Xiaoyang;
Liu, Yang;
Heng, Chun Huat;
Thean, Aaron Voon‐Yew;
Liu, Zhuangjian

Publication type:

Article

Epoxy‐Based Nanocomposites for High‐Voltage Insulation: A Review.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800505

By:

Adnan, Mohammed Mostafa;
Glaum, Julia;
Einarsrud, Mari‐Ann;
Tveten, Erlend Grytli;
Ese, Marit‐Helen Glomm;
Hvidsten, Sverre;
Glomm, Wilhelm

Publication type:

Article

Extremely Light Carrier‐Effective Mass in a Distorted Simple Metal Oxide.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800504

By:

Min, Taewon;
Kong, Hyeonjun;
Lee, Joonhyuk;
Lee, Jaekwang;
Jeen, Hyoungjeen;
Kim, Gowoon;
Zhang, Yu‐Qiao;
Ohta, Hiromichi;
Suh, Hoyoung;
Jang, Jae Hyuck;
Jeon, Tae‐Yeol;
Lee, Inwon;
Cho, Jinhyung

Publication type:

Article

Hysteresis‐Free Hexagonal Boron Nitride Encapsulated 2D Semiconductor Transistors, NMOS and CMOS Inverters.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800419

By:

Yuan, Kai;
Xu, Xiaolong;
Yin, Ruoyu;
Li, Yanping;
Liu, Shuai;
Dai, Lun;
Ye, Yu;
Meng, Yongqiang;
Lin, Der‐Yuh;
Watanabe, Kenji;
Taniguchi, Takashi

Publication type:

Article

Ultrafast Multilevel Switching in Au/YIG/n‐Si RRAM.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800418

By:

Chen, Zhiwei;
Huang, Weichuan;
Zhao, Wenbo;
Hou, Chuangming;
Ma, Chao;
Liu, Chuanchuan;
Sun, Haoyang;
Yin, Yuewei;
Li, Xiaoguang

Publication type:

Article

Controlling Conductive Filament and Tributyrin Sensing Using an Optimized Porous Iridium Interfacial Layer in Cu/Ir/TiNxOy/TiN.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800288

By:

Dutta, Mrinmoy;
Maikap, Siddheswar;
Qiu, Jiantai Timothy

Publication type:

Article

Nanostructured Silicon‐Based Heterojunction Solar Cells with Double Hole‐Transporting Layers.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800070

By:

Shen, Suling;
Zhang, Jie;
Zhou, Shuang;
Zhao, Ni;
Wong, Ching‐Ping;
Han, Yujie;
Gao, Peng;
Sun, Baoqun

Publication type:

Article