Works matching IS 2199160X AND DT 2019 AND VI 5 AND IP 2
Results: 43
Organic Memory Devices: 9,10‐Imide‐Pyrene‐Fused Pyrazaacenes (IPPA) as N‐Type Doping Materials for High‐Performance Nonvolatile Organic Field Effect Transistor Memory Devices (Adv. Electron. Mater. 2/2019).
- Published in:
- 2019
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- Publication type:
- Cover Art
Masthead: (Adv. Electron. Mater. 2/2019).
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201970009
- Publication type:
- Article
Nonvolatile Memory: Ultrafast Multilevel Switching in Au/YIG/n‐Si RRAM (Adv. Electron. Mater. 2/2019).
- Published in:
- 2019
- By:
- Publication type:
- Cover Art
Electrochemical Sensors: 3D Printed Disposable Wireless Ion Sensors with Biocompatible Cellulose Composites (Adv. Electron. Mater. 2/2019).
- Published in:
- 2019
- By:
- Publication type:
- Cover Art
3D Printed Disposable Wireless Ion Sensors with Biocompatible Cellulose Composites.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800778
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- Publication type:
- Article
Releasable High‐Performance GaAs Schottky Diodes for Gigahertz Operation of Flexible Bridge Rectifier.
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- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800772
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- Article
Over 6% Certified Sb<sub>2</sub>(S,Se)<sub>3</sub> Solar Cells Fabricated via In Situ Hydrothermal Growth and Postselenization.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800683
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- Publication type:
- Article
Doping Effect on Conducting Polymer‐Metal Schottky DC Generators.
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- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800675
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- Publication type:
- Article
Improved Hole Injection into Perovskite Light‐Emitting Diodes Using A Black Phosphorus Interlayer.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800687
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- Publication type:
- Article
Recent Advances in Black Phosphorus‐Based Electronic Devices.
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- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800666
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- Publication type:
- Article
Enhanced Switching Stability in Forming‐Free SiN<sub>x</sub> Resistive Random Access Memory Devices with Low Power Consumptions Based on Local Pt Doping in a Stacked Structure.
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- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800739
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- Publication type:
- Article
Mechanisms for Enhanced State Retention and Stability in Redox‐Gated Organic Neuromorphic Devices.
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- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800686
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- Publication type:
- Article
A Fully Transparent, Flexible, Sensitive, and Visible‐Blind Ultraviolet Sensor Based on Carbon Nanotube–Graphene Hybrid.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800737
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- Publication type:
- Article
Phase‐Field Study of Electromechanical Coupling in Lead‐Free Relaxor/Ferroelectric‐Layered Composites.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800710
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- Publication type:
- Article
Hole Conduction of Tungsten Diselenide Crystalline Transistors by Niobium Dopant.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800695
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- Publication type:
- Article
Switchable Two‐Terminal Transparent Optoelectronic Devices Based on 2D Perovskite.
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- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800662
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- Publication type:
- Article
Hybrid‐RRAM toward Next Generation of Nonvolatile Memory: Coupling of Oxygen Vacancies and Metal Ions.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800658
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- Publication type:
- Article
Intrinsically Stretchable Resistive Switching Memory Enabled by Combining a Liquid Metal–Based Soft Electrode and a Metal–Organic Framework Insulator.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800655
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- Publication type:
- Article
Highly Conducting, Transparent PEDOT:PSS Polymer Electrodes from Post‐Treatment with Weak and Strong Acids.
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- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800654
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- Publication type:
- Article
Repeatable Room Temperature Negative Differential Resistance in AlN/GaN Resonant Tunneling Diodes Grown on Sapphire.
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- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800651
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- Publication type:
- Article
Silver Telluride Nanowire Assembly for High‐Performance Flexible Thermoelectric Film and Its Application in Self‐Powered Temperature Sensor.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800612
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- Publication type:
- Article
Suppressing Ambipolar Characteristics of WSe<sub>2</sub> Field Effect Transistors Using Graphene Oxide.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800608
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- Publication type:
- Article
Large‐Area All‐Printed Temperature Sensing Surfaces Using Novel Composite Thermistor Materials.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800605
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- Publication type:
- Article
9,10‐Imide‐Pyrene‐Fused Pyrazaacenes (IPPA) as N‐Type Doping Materials for High‐Performance Nonvolatile Organic Field Effect Transistor Memory Devices.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800598
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- Publication type:
- Article
Substrate‐Wide Confined Shear Alignment of Carbon Nanotubes for Thin Film Transistors.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800593
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- Publication type:
- Article
Probing the Electronic Properties of Monolayer MoS<sub>2</sub> via Interaction with Molecular Hydrogen.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800591
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- Publication type:
- Article
Conducting Bridge Resistive Switching Behaviors in Cubic MAPbI<sub>3</sub>, Orthorhombic RbPbI<sub>3</sub>, and Their Mixtures.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800586
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- Publication type:
- Article
Transparent and Flexible Thin‐Film Transistors with High Performance Prepared at Ultralow Temperatures by Atomic Layer Deposition.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800583
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- Publication type:
- Article
Self‐Powered MoS<sub>2</sub>–PDPP3T Heterotransistor‐Based Broadband Photodetectors.
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- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800580
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- Publication type:
- Article
The Role of Weak Molecular Dopants in Enhancing the Performance of Solution‐Processed Organic Field‐Effect Transistors.
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- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800547
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- Publication type:
- Article
A True Random Number Generator Using Threshold‐Switching‐Based Memristors in an Efficient Circuit Design.
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- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800543
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- Publication type:
- Article
Low‐Voltage, High‐Frequency Organic Transistors and Unipolar and Complementary Ring Oscillators on Paper.
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- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800453
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- Publication type:
- Article
Nucleation‐Limited Ferroelectric Orthorhombic Phase Formation in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films.
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- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800436
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- Publication type:
- Article
Semiconducting Single‐Walled Carbon Nanotubes or Very Rigid Conjugated Polymers: A Comparison.
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- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800514
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- Publication type:
- Article
Semiconducting Polymer Thin Films Used in Organic Solar Cells: A Scanning Tunneling Microscopy Study.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800499
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- Publication type:
- Article
High Bipolar Conductivity and Robust In‐Plane Spontaneous Electric Polarization in Selenene.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800475
- By:
- Publication type:
- Article
A Stretchable‐Hybrid Low‐Power Monolithic ECG Patch with Microfluidic Liquid‐Metal Interconnects and Stretchable Carbon‐Black Nanocomposite Electrodes for Wearable Heart Monitoring.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800463
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- Publication type:
- Article
Epoxy‐Based Nanocomposites for High‐Voltage Insulation: A Review.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800505
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- Publication type:
- Article
Extremely Light Carrier‐Effective Mass in a Distorted Simple Metal Oxide.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800504
- By:
- Publication type:
- Article
Hysteresis‐Free Hexagonal Boron Nitride Encapsulated 2D Semiconductor Transistors, NMOS and CMOS Inverters.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800419
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- Publication type:
- Article
Ultrafast Multilevel Switching in Au/YIG/n‐Si RRAM.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800418
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- Publication type:
- Article
Controlling Conductive Filament and Tributyrin Sensing Using an Optimized Porous Iridium Interfacial Layer in Cu/Ir/TiN<sub>x</sub>O<sub>y</sub>/TiN.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800288
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- Publication type:
- Article
Nanostructured Silicon‐Based Heterojunction Solar Cells with Double Hole‐Transporting Layers.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800070
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- Publication type:
- Article