Works matching IS 2199160X AND DT 2018 AND VI 4 AND IP 4

Results: 20

Flexible Electronics: Mechanically Tunable Magnetic Properties of Flexible SrRuO3 Epitaxial Thin Films on Mica Substrates (Adv. Electron. Mater. 4/2018).

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201870022

By:

Liu, Jindong;
Feng, Yu;
Tang, Rujun;
Zhao, Run;
Gao, Ju;
Shi, Daning;
Yang, Hao

Publication type:

Article

Masthead: (Adv. Electron. Mater. 4/2018).

Published in:: Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201870021
Publication type:: Article

Thin‐Film Transistors: Improved Charge Injection of Metal Oxide Thin‐Film Transistors by Stacked Electrodes of Indium Tin Oxide Nanoparticles and Silver Nanowires (Adv. Electron. Mater. 4/2018).

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201870020

By:

Kim, Chaewon;
Kim, Yong‐Hoon;
Noh, Yong‐Young;
Hong, Sung‐Jei;
Lee, Mi Jung

Publication type:

Article

A Graphene‐Based Filament Transistor with Sub‐10 mVdec−1 Subthreshold Swing.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201700608

By:

Tian, He;
Wang, Xuefeng;
Zhao, Haiming;
Mi, Wentian;
Yang, Yi;
Chiu, Po‐Wen;
Ren, Tian‐Ling

Publication type:

Article

Transient Resistive Switching Memory of CsPbBr3 Thin Films.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201700596

By:

Lin, Qiqi;
Hu, Wei;
Zang, Zhigang;
Zhou, Miao;
Du, Juan;
Wang, Ming;
Han, Shuai;
Tang, Xiaosheng

Publication type:

Article

A Highly Sensitive Flexible Capacitive Tactile Sensor with Sparse and High‐Aspect‐Ratio Microstructures.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201700586

By:

Wan, Yongbiao;
Qiu, Zhiguang;
Hong, Ying;
Wang, Yan;
Zhang, Jianming;
Liu, Qingxian;
Wu, Zhigang;
Guo, Chuan Fei

Publication type:

Article

Coexistence of Negative Differential Resistance and Resistive Switching Memory at Room Temperature in TiO<italic>x</italic> Modulated by Moisture.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201700567

By:

Zhou, Guangdong;
Duan, Shukai;
Li, Ping;
Sun, Bai;
Wu, Bo;
Yao, Yanqing;
Yang, Xiude;
Han, Juanjuan;
Wu, Jinggao;
Wang, Gang;
Liao, Liping;
Lin, Cunyan;
Hu, Wei;
Xu, Cunyun;
Liu, Debei;
Chen, Tian;
Chen, Lijia;
Zhou, Ankun;
Song, Qunliang

Publication type:

Article

Dimensional Crossover Transport Induced by Substitutional Atomic Doping in SnSe2.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201700563

By:

Lee, Suyoun;
Lee, Young Tack;
Park, Seong Gon;
Lee, Kyu Hyoung;
Kim, Sung Wng;
Hwang, Do Kyung;
Lee, Kimoon

Publication type:

Article

A High‐Speed and Low‐Power Multistate Memory Based on Multiferroic Tunnel Junctions.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201700560

By:

Huang, Weichuan;
Zhao, Wenbo;
Luo, Zhen;
Yin, Yuewei;
Lin, Yue;
Hou, Chuangming;
Tian, Bobo;
Duan, Chun‐Gang;
Li, Xiao‐Guang

Publication type:

Article

Solution‐Processed Flexible Threshold Switch Devices.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201700521

By:

Park, Youngjun;
Han, Un‐Bin;
Kim, Min‐Kyu;
Lee, Jang‐Sik

Publication type:

Article

Reduction of Parasitic Capacitance in Indium‐Gallium‐Zinc Oxide (a‐IGZO) Thin‐Film Transistors (TFTs) without Scarifying Drain Currents by Using Stripe‐Patterned Source/Drain Electrodes.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201700550

By:

Lee, Suhui;
Chen, Yuanfeng;
Jeon, Jaekwon;
Park, Chanju;
Jang, Jin

Publication type:

Article

Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD‐Derived Al2O3 Passivation Layer and Forming Gas Annealing.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201700543

By:

Jiang, Shanshan;
He, Gang;
Liu, Mao;
Zhu, Li;
Liang, Shuang;
Li, Wendong;
Sun, Zhaoqi;
Tian, Mingliang

Publication type:

Article

Controlled Growth of Bilayer‐MoS2 Films and MoS2‐Based Field‐Effect Transistor (FET) Performance Optimization.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201700524

By:

Fang, Mingxu;
Wang, Fang;
Han, Yemei;
Feng, Yulin;
Ren, Tianling;
Li, Yue;
Tang, Dengxuan;
Song, Zhitang;
Zhang, Kailiang

Publication type:

Article

Mechanically Tunable Magnetic Properties of Flexible SrRuO3 Epitaxial Thin Films on Mica Substrates.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201700522

By:

Liu, Jindong;
Feng, Yu;
Tang, Rujun;
Zhao, Run;
Gao, Ju;
Shi, Daning;
Yang, Hao

Publication type:

Article

Nature and Extent of Solution Aggregation Determines the Performance of P(NDI2OD‐T2) Thin‐Film Transistors.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201700559

By:

Nahid, Masrur M.;
Welford, Adam;
Gann, Eliot;
Thomsen, Lars;
Sharma, Kamendra P.;
McNeill, Christopher R.

Publication type:

Article

Giant and Linear Piezo‐Phototronic Response in Layered GaSe Nanosheets.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201700447

By:

Jia, Tanhua;
Fuh, Huei‐Ru;
Chen, Dengyun;
Abid, Mohamed;
Abid, Mourad;
Zhang, Duan;
Sarker, Anas B.;
Cho, Jiung;
Choi, Miri;
Chun, Byong Sun;
Xu, Hongjun;
Ó Coileáin, Cormac;
Liu, Huajun;
Chang, Ching‐Ray;
Wu, Han‐Chun

Publication type:

Article

Improved Charge Injection of Metal Oxide Thin‐Film Transistors by Stacked Electrodes of Indium Tin Oxide Nanoparticles and Silver Nanowires.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201700440

By:

Kim, Chaewon;
Kim, Yong‐Hoon;
Noh, Yong‐Young;
Hong, Sung‐Jei;
Lee, Mi Jung

Publication type:

Article

Low‐Temperature High‐Rate Capabilities of Lithium Batteries via Polarization‐Assisted Ion Pathways.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201700413

By:

Teranishi, Takashi;
Katsuji, Naoto;
Chajima, Keisuke;
Yasuhara, Sou;
Inohara, Masahiro;
Yoshikawa, Yumi;
Yasui, Shintaro;
Hayashi, Hidetaka;
Kishimoto, Akira;
Itoh, Mitsuru

Publication type:

Article

Wafer Scale Transfer of Ultrathin Silicon Chips on Flexible Substrates for High Performance Bendable Systems.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201700277

By:

Navaraj, William Taube;
Gupta, Shoubhik;
Lorenzelli, Leandro;
Dahiya, Ravinder

Publication type:

Article

Origin of Temperature‐Dependent Ferroelectricity in Si‐Doped HfO2.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201700489

By:

Park, Min Hyuk;
Chung, Ching‐Chang;
Schenk, Tony;
Richter, Claudia;
Hoffmann, Michael;
Wirth, Steffen;
Jones, Jacob L.;
Mikolajick, Thomas;
Schroeder, Uwe

Publication type:

Article

Works matching IS 2199160X AND DT 2018 AND VI 4 AND IP 4

Flexible Electronics: Mechanically Tunable Magnetic Properties of Flexible SrRuO<sub>3</sub> Epitaxial Thin Films on Mica Substrates (Adv. Electron. Mater. 4/2018).

Masthead: (Adv. Electron. Mater. 4/2018).

Thin‐Film Transistors: Improved Charge Injection of Metal Oxide Thin‐Film Transistors by Stacked Electrodes of Indium Tin Oxide Nanoparticles and Silver Nanowires (Adv. Electron. Mater. 4/2018).

A Graphene‐Based Filament Transistor with Sub‐10 mVdec<sup>−1</sup> Subthreshold Swing.

Transient Resistive Switching Memory of CsPbBr<sub>3</sub> Thin Films.

A Highly Sensitive Flexible Capacitive Tactile Sensor with Sparse and High‐Aspect‐Ratio Microstructures.

Coexistence of Negative Differential Resistance and Resistive Switching Memory at Room Temperature in TiO<italic><sub>x</sub></italic> Modulated by Moisture.

Dimensional Crossover Transport Induced by Substitutional Atomic Doping in SnSe<sub>2</sub>.

A High‐Speed and Low‐Power Multistate Memory Based on Multiferroic Tunnel Junctions.

Solution‐Processed Flexible Threshold Switch Devices.

Reduction of Parasitic Capacitance in Indium‐Gallium‐Zinc Oxide (a‐IGZO) Thin‐Film Transistors (TFTs) without Scarifying Drain Currents by Using Stripe‐Patterned Source/Drain Electrodes.

Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD‐Derived Al<sub>2</sub>O<sub>3</sub> Passivation Layer and Forming Gas Annealing.

Controlled Growth of Bilayer‐MoS<sub>2</sub> Films and MoS<sub>2</sub>‐Based Field‐Effect Transistor (FET) Performance Optimization.

Mechanically Tunable Magnetic Properties of Flexible SrRuO<sub>3</sub> Epitaxial Thin Films on Mica Substrates.

Nature and Extent of Solution Aggregation Determines the Performance of P(NDI2OD‐T2) Thin‐Film Transistors.

Giant and Linear Piezo‐Phototronic Response in Layered GaSe Nanosheets.

Improved Charge Injection of Metal Oxide Thin‐Film Transistors by Stacked Electrodes of Indium Tin Oxide Nanoparticles and Silver Nanowires.

Low‐Temperature High‐Rate Capabilities of Lithium Batteries via Polarization‐Assisted Ion Pathways.

Wafer Scale Transfer of Ultrathin Silicon Chips on Flexible Substrates for High Performance Bendable Systems.

Origin of Temperature‐Dependent Ferroelectricity in Si‐Doped HfO<sub>2</sub>.