Works matching IS 2199160X AND DT 2018 AND VI 4 AND IP 4

Results: 20

Transient Resistive Switching Memory of CsPbBr3 Thin Films.
Published in:
Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201700596
By:
- Lin, Qiqi;
- Hu, Wei;
- Zang, Zhigang;
- Zhou, Miao;
- Du, Juan;
- Wang, Ming;
- Han, Shuai;
- Tang, Xiaosheng
Publication type:
Article
Flexible Electronics: Mechanically Tunable Magnetic Properties of Flexible SrRuO3 Epitaxial Thin Films on Mica Substrates (Adv. Electron. Mater. 4/2018).
Published in:
Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201870022
By:
- Liu, Jindong;
- Feng, Yu;
- Tang, Rujun;
- Zhao, Run;
- Gao, Ju;
- Shi, Daning;
- Yang, Hao
Publication type:
Article
Masthead: (Adv. Electron. Mater. 4/2018).
Published in:
Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201870021
Publication type:
Article
Thin‐Film Transistors: Improved Charge Injection of Metal Oxide Thin‐Film Transistors by Stacked Electrodes of Indium Tin Oxide Nanoparticles and Silver Nanowires (Adv. Electron. Mater. 4/2018).
Published in:
Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201870020
By:
- Kim, Chaewon;
- Kim, Yong‐Hoon;
- Noh, Yong‐Young;
- Hong, Sung‐Jei;
- Lee, Mi Jung
Publication type:
Article
A Graphene‐Based Filament Transistor with Sub‐10 mVdec−1 Subthreshold Swing.
Published in:
Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201700608
By:
- Tian, He;
- Wang, Xuefeng;
- Zhao, Haiming;
- Mi, Wentian;
- Yang, Yi;
- Chiu, Po‐Wen;
- Ren, Tian‐Ling
Publication type:
Article
A Highly Sensitive Flexible Capacitive Tactile Sensor with Sparse and High‐Aspect‐Ratio Microstructures.
Published in:
Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201700586
By:
- Wan, Yongbiao;
- Qiu, Zhiguang;
- Hong, Ying;
- Wang, Yan;
- Zhang, Jianming;
- Liu, Qingxian;
- Wu, Zhigang;
- Guo, Chuan Fei
Publication type:
Article
Coexistence of Negative Differential Resistance and Resistive Switching Memory at Room Temperature in TiO<italic>x</italic> Modulated by Moisture.
Published in:
Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201700567
By:
- Zhou, Guangdong;
- Duan, Shukai;
- Li, Ping;
- Sun, Bai;
- Wu, Bo;
- Yao, Yanqing;
- Yang, Xiude;
- Han, Juanjuan;
- Wu, Jinggao;
- Wang, Gang;
- Liao, Liping;
- Lin, Cunyan;
- Hu, Wei;
- Xu, Cunyun;
- Liu, Debei;
- Chen, Tian;
- Chen, Lijia;
- Zhou, Ankun;
- Song, Qunliang
Publication type:
Article
Dimensional Crossover Transport Induced by Substitutional Atomic Doping in SnSe2.
Published in:
Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201700563
By:
- Lee, Suyoun;
- Lee, Young Tack;
- Park, Seong Gon;
- Lee, Kyu Hyoung;
- Kim, Sung Wng;
- Hwang, Do Kyung;
- Lee, Kimoon
Publication type:
Article
A High‐Speed and Low‐Power Multistate Memory Based on Multiferroic Tunnel Junctions.
Published in:
Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201700560
By:
- Huang, Weichuan;
- Zhao, Wenbo;
- Luo, Zhen;
- Yin, Yuewei;
- Lin, Yue;
- Hou, Chuangming;
- Tian, Bobo;
- Duan, Chun‐Gang;
- Li, Xiao‐Guang
Publication type:
Article
Nature and Extent of Solution Aggregation Determines the Performance of P(NDI2OD‐T2) Thin‐Film Transistors.
Published in:
Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201700559
By:
- Nahid, Masrur M.;
- Welford, Adam;
- Gann, Eliot;
- Thomsen, Lars;
- Sharma, Kamendra P.;
- McNeill, Christopher R.
Publication type:
Article
Reduction of Parasitic Capacitance in Indium‐Gallium‐Zinc Oxide (a‐IGZO) Thin‐Film Transistors (TFTs) without Scarifying Drain Currents by Using Stripe‐Patterned Source/Drain Electrodes.
Published in:
Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201700550
By:
- Lee, Suhui;
- Chen, Yuanfeng;
- Jeon, Jaekwon;
- Park, Chanju;
- Jang, Jin
Publication type:
Article
Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD‐Derived Al2O3 Passivation Layer and Forming Gas Annealing.
Published in:
Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201700543
By:
- Jiang, Shanshan;
- He, Gang;
- Liu, Mao;
- Zhu, Li;
- Liang, Shuang;
- Li, Wendong;
- Sun, Zhaoqi;
- Tian, Mingliang
Publication type:
Article
Controlled Growth of Bilayer‐MoS2 Films and MoS2‐Based Field‐Effect Transistor (FET) Performance Optimization.
Published in:
Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201700524
By:
- Fang, Mingxu;
- Wang, Fang;
- Han, Yemei;
- Feng, Yulin;
- Ren, Tianling;
- Li, Yue;
- Tang, Dengxuan;
- Song, Zhitang;
- Zhang, Kailiang
Publication type:
Article
Wafer Scale Transfer of Ultrathin Silicon Chips on Flexible Substrates for High Performance Bendable Systems.
Published in:
Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201700277
By:
- Navaraj, William Taube;
- Gupta, Shoubhik;
- Lorenzelli, Leandro;
- Dahiya, Ravinder
Publication type:
Article
Mechanically Tunable Magnetic Properties of Flexible SrRuO3 Epitaxial Thin Films on Mica Substrates.
Published in:
Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201700522
By:
- Liu, Jindong;
- Feng, Yu;
- Tang, Rujun;
- Zhao, Run;
- Gao, Ju;
- Shi, Daning;
- Yang, Hao
Publication type:
Article
Solution‐Processed Flexible Threshold Switch Devices.
Published in:
Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201700521
By:
- Park, Youngjun;
- Han, Un‐Bin;
- Kim, Min‐Kyu;
- Lee, Jang‐Sik
Publication type:
Article
Origin of Temperature‐Dependent Ferroelectricity in Si‐Doped HfO2.
Published in:
Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201700489
By:
- Park, Min Hyuk;
- Chung, Ching‐Chang;
- Schenk, Tony;
- Richter, Claudia;
- Hoffmann, Michael;
- Wirth, Steffen;
- Jones, Jacob L.;
- Mikolajick, Thomas;
- Schroeder, Uwe
Publication type:
Article
Giant and Linear Piezo‐Phototronic Response in Layered GaSe Nanosheets.
Published in:
Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201700447
By:
- Jia, Tanhua;
- Fuh, Huei‐Ru;
- Chen, Dengyun;
- Abid, Mohamed;
- Abid, Mourad;
- Zhang, Duan;
- Sarker, Anas B.;
- Cho, Jiung;
- Choi, Miri;
- Chun, Byong Sun;
- Xu, Hongjun;
- Ó Coileáin, Cormac;
- Liu, Huajun;
- Chang, Ching‐Ray;
- Wu, Han‐Chun
Publication type:
Article
Improved Charge Injection of Metal Oxide Thin‐Film Transistors by Stacked Electrodes of Indium Tin Oxide Nanoparticles and Silver Nanowires.
Published in:
Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201700440
By:
- Kim, Chaewon;
- Kim, Yong‐Hoon;
- Noh, Yong‐Young;
- Hong, Sung‐Jei;
- Lee, Mi Jung
Publication type:
Article
Low‐Temperature High‐Rate Capabilities of Lithium Batteries via Polarization‐Assisted Ion Pathways.
Published in:
Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201700413
By:
- Teranishi, Takashi;
- Katsuji, Naoto;
- Chajima, Keisuke;
- Yasuhara, Sou;
- Inohara, Masahiro;
- Yoshikawa, Yumi;
- Yasui, Shintaro;
- Hayashi, Hidetaka;
- Kishimoto, Akira;
- Itoh, Mitsuru
Publication type:
Article

Works matching IS 2199160X AND DT 2018 AND VI 4 AND IP 4

Transient Resistive Switching Memory of CsPbBr<sub>3</sub> Thin Films.

Flexible Electronics: Mechanically Tunable Magnetic Properties of Flexible SrRuO<sub>3</sub> Epitaxial Thin Films on Mica Substrates (Adv. Electron. Mater. 4/2018).

Masthead: (Adv. Electron. Mater. 4/2018).

Thin‐Film Transistors: Improved Charge Injection of Metal Oxide Thin‐Film Transistors by Stacked Electrodes of Indium Tin Oxide Nanoparticles and Silver Nanowires (Adv. Electron. Mater. 4/2018).

A Graphene‐Based Filament Transistor with Sub‐10 mVdec<sup>−1</sup> Subthreshold Swing.

A Highly Sensitive Flexible Capacitive Tactile Sensor with Sparse and High‐Aspect‐Ratio Microstructures.

Coexistence of Negative Differential Resistance and Resistive Switching Memory at Room Temperature in TiO<italic><sub>x</sub></italic> Modulated by Moisture.

Dimensional Crossover Transport Induced by Substitutional Atomic Doping in SnSe<sub>2</sub>.

A High‐Speed and Low‐Power Multistate Memory Based on Multiferroic Tunnel Junctions.

Nature and Extent of Solution Aggregation Determines the Performance of P(NDI2OD‐T2) Thin‐Film Transistors.

Reduction of Parasitic Capacitance in Indium‐Gallium‐Zinc Oxide (a‐IGZO) Thin‐Film Transistors (TFTs) without Scarifying Drain Currents by Using Stripe‐Patterned Source/Drain Electrodes.

Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD‐Derived Al<sub>2</sub>O<sub>3</sub> Passivation Layer and Forming Gas Annealing.

Controlled Growth of Bilayer‐MoS<sub>2</sub> Films and MoS<sub>2</sub>‐Based Field‐Effect Transistor (FET) Performance Optimization.

Wafer Scale Transfer of Ultrathin Silicon Chips on Flexible Substrates for High Performance Bendable Systems.

Mechanically Tunable Magnetic Properties of Flexible SrRuO<sub>3</sub> Epitaxial Thin Films on Mica Substrates.

Solution‐Processed Flexible Threshold Switch Devices.

Origin of Temperature‐Dependent Ferroelectricity in Si‐Doped HfO<sub>2</sub>.

Giant and Linear Piezo‐Phototronic Response in Layered GaSe Nanosheets.

Improved Charge Injection of Metal Oxide Thin‐Film Transistors by Stacked Electrodes of Indium Tin Oxide Nanoparticles and Silver Nanowires.

Low‐Temperature High‐Rate Capabilities of Lithium Batteries via Polarization‐Assisted Ion Pathways.