Works matching IS 2199160X AND DT 2018 AND VI 4 AND IP 3
Results: 9
Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches.
- Published in:
- Advanced Electronic Materials, 2018, v. 4, n. 3, p. 1, doi. 10.1002/aelm.201700461
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- Article
Bimodal Dielectric Breakdown in Electronic Devices Using Chemical Vapor Deposited Hexagonal Boron Nitride as Dielectric.
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- Advanced Electronic Materials, 2018, v. 4, n. 3, p. 1, doi. 10.1002/aelm.201700506
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- Article
Electronic Structure Trumps Planarity: Unexpected Narrow Exciton Delocalization in PNDIT2 Revealed by Time-Resolved Electron Paramagnetic Resonance (EPR) Spectroscopy.
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- Advanced Electronic Materials, 2018, v. 4, n. 3, p. 1, doi. 10.1002/aelm.201700385
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- Article
Probing Electron Mobility of Monolayer MoS<sub>2</sub> Field-Effect Transistors in Aqueous Environments.
- Published in:
- Advanced Electronic Materials, 2018, v. 4, n. 3, p. 1, doi. 10.1002/aelm.201700418
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- Article
Fluorinated Head-to-Head Dialkoxybithiophene: A New Electron-Donating Building Block for High-Performance Polymer Semiconductors.
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- Advanced Electronic Materials, 2018, v. 4, n. 3, p. 1, doi. 10.1002/aelm.201700519
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- Article
Analysis of Performance Instabilities of Hafnia-Based Ferroelectrics Using Modulus Spectroscopy and Thermally Stimulated Depolarization Currents.
- Published in:
- Advanced Electronic Materials, 2018, v. 4, n. 3, p. 1, doi. 10.1002/aelm.201700547
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- Article
High-Efficiency Thin-Film Superlattice Thermoelectric Cooler Modules Enabled by Low Resistivity Contacts.
- Published in:
- Advanced Electronic Materials, 2018, v. 4, n. 3, p. 1, doi. 10.1002/aelm.201700381
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- Article
La<sub>2/3</sub>Sr<sub>1/3</sub>VO<sub>3</sub> Thin Films: A New p-Type Transparent Conducting Oxide with Very High Figure of Merit.
- Published in:
- Advanced Electronic Materials, 2018, v. 4, n. 3, p. 1, doi. 10.1002/aelm.201700476
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- Publication type:
- Article
High Performance Multiwall Carbon Nanotube-Insulator-Metal Tunnel Diode Arrays for Optical Rectification.
- Published in:
- Advanced Electronic Materials, 2018, v. 4, n. 3, p. 1, doi. 10.1002/aelm.201700446
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- Article