Works matching IS 2199160X AND DT 2018 AND VI 4 AND IP 2

Results: 23

Masthead: (Adv. Electron. Mater. 2/2018).

Published in:: Advanced Electronic Materials, 2018, v. 4, n. 2, p. 1, doi. 10.1002/aelm.201870013
Publication type:: Article

Sensors: Hybrid Perovskite‐Based Position‐Sensitive Detectors (Adv. Electron. Mater. 2/2018).

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 2, p. 1, doi. 10.1002/aelm.201870012

By:

Ashar, A. Z.;
Ganesh, N.;
Narayan, K. S.

Publication type:

Article

ReRAM: Role of the Electrode Material on the RESET Limitation in Oxide ReRAM Devices (Adv. Electron. Mater. 2/2018).

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 2, p. 1, doi. 10.1002/aelm.201870011

By:

Schönhals, Alexander;
Rosário, Carlos M. M.;
Hoffmann‐Eifert, Susanne;
Waser, Rainer;
Menzel, Stephan;
Wouters, Dirk J.

Publication type:

Article

Semiconductors: Crystal Imperfection Modulation Engineering for Functionalization of Wide Band Gap Semiconductor Radiation Detector (Adv. Electron. Mater. 2/2018).

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 2, p. 1, doi. 10.1002/aelm.201870010

By:

Ji, Xu;
Chen, Liang;
Xu, Mengxuan;
Dong, Mei;
Yan, Kun;
Cheng, Shuang;
Kong, Xueqian;
Wang, Tongyao;
Liu, Jiandang;
Gu, Bingchuan;
Wang, Huanhua;
Liu, Zhiyong;
Wang, Shuao;
Huang, Feng;
Ouyang, Xiaoping

Publication type:

Article

Design of CMOS Compatible, High‐Speed, Highly‐Stable Complementary Switching with Multilevel Operation in 3D Vertically Stacked Novel HfO2/Al2O3/TiO<italic>x</italic> (HAT) RRAM.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 2, p. 1, doi. 10.1002/aelm.201700561

By:

Banerjee, Writam;
Zhang, Xumeng;
Luo, Qing;
Lv, Hangbing;
Liu, Qi;
Long, Shibing;
Liu, Ming

Publication type:

Article

Finding Our Voice: <italic>Advanced Electronic Materials</italic> is 3 Years Old.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 2, p. 1, doi. 10.1002/aelm.201700664

By:

Meskine, Hakim

Publication type:

Article

Nonvolatile Electric‐Optical Memory Controlled by Conductive Filaments in Ti‐Doped BiFeO3.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 2, p. 1, doi. 10.1002/aelm.201700551

By:

Lu, Zengxing;
Yang, Xiaodong;
Jin, Chen;
Li, Peilian;
Wan, Jian‐guo;
Liu, Jun‐ming

Publication type:

Article

Organic/Inorganic Hybrid EIL for All‐Solution‐Processed OLEDs.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 2, p. 1, doi. 10.1002/aelm.201700380

By:

Song, Chen;
Hu, Zhanhao;
Luo, Yu;
Cun, Yangke;
Wang, Lei;
Ying, Lei;
Huang, Fei;
Peng, Junbiao;
Wang, Jian;
Cao, Yong

Publication type:

Article

Insights into the Failure Mechanisms of Organic Photodetectors.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 2, p. 1, doi. 10.1002/aelm.201700526

By:

Kielar, Marcin;
Daanoune, Mehdi;
François‐Martin, Olivier;
Flament, Bruno;
Dhez, Olivier;
Pandey, Ajay K.;
Chambon, Sylvain;
Clerc, Raphaël;
Hirsch, Lionel

Publication type:

Article

Mesoscopic 2D Charge Transport in Commonplace PEDOT:PSS Films.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 2, p. 1, doi. 10.1002/aelm.201700490

By:

Honma, Yuta;
Itoh, Keisuke;
Masunaga, Hiroyasu;
Fujiwara, Akihiko;
Nishizaki, Terukazu;
Iguchi, Satoshi;
Sasaki, Takahiko

Publication type:

Article

Enhanced Stability of Black Phosphorus Field‐Effect Transistors via Hydrogen Treatment.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 2, p. 1, doi. 10.1002/aelm.201700455

By:

Wan, Bensong;
Zhou, Qionghua;
Zhang, Junying;
Wang, Yue;
Yang, Bingchao;
Lv, Weiming;
Zhang, Baoshun;
Zeng, Zhongming;
Chen, Qian;
Wang, Jinlan;
Wang, Wenhong;
Wen, Fusheng;
Xiang, Jianyong;
Xu, Bo;
Zhao, Zhisheng;
Tian, Yongjun;
Liu, Zhongyuan

Publication type:

Article

3D‐Integrated and Multifunctional All‐Soft Physical Microsystems Based on Liquid Metal for Electronic Skin Applications.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 2, p. 1, doi. 10.1002/aelm.201700434

By:

Kim, Min‐gu;
Alrowais, Hommood;
Brand, Oliver

Publication type:

Article

A Free‐Standing High‐Output Power Density Thermoelectric Device Based on Structure‐Ordered PEDOT:PSS.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 2, p. 1, doi. 10.1002/aelm.201700496

By:

Li, Zaifang;
Sun, Hengda;
Hsiao, Ching‐Lien;
Yao, Yulong;
Xiao, Yiqun;
Shahi, Maryam;
Jin, Yingzhi;
Cruce, Alex;
Liu, Xianjie;
Jiang, Youyu;
Meng, Wei;
Qin, Fei;
Ederth, Thomas;
Fabiano, Simone;
Chen, Weimin M.;
Lu, Xinhui;
Birch, Jens;
Brill, Joseph W.;
Zhou, Yinhua;
Crispin, Xavier

Publication type:

Article

Chemiresistive and Chemicapacitive Devices Formed via Morphology Control of Electroconductive Bio‐nanocomposites.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 2, p. 1, doi. 10.1002/aelm.201700495

By:

Aggas, John R.;
Lutkenhaus, Jodie;
Guiseppi‐Elie, Anthony

Publication type:

Article

Novel Optoelectronic Devices: Transition‐Metal‐Dichalcogenide‐Based 2D Heterostructures.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 2, p. 1, doi. 10.1002/aelm.201700335

By:

Zeng, Qingsheng;
Liu, Zheng

Publication type:

Article

Pyrolytically Modified Polyacrylonitrile‐Covalently Grafted MoS2 Nanosheets for a Nonvolatile Rewritable Memory Device.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 2, p. 1, doi. 10.1002/aelm.201700397

By:

Fan, Fei;
Zhang, Bin;
Song, Sannian;
Liu, Bo;
Cao, Yaming;
Chen, Yu

Publication type:

Article

Stretchable Polymer Semiconductors for Plastic Electronics.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 2, p. 1, doi. 10.1002/aelm.201700429

By:

Wang, Ging‐Ji Nathan;
Gasperini, Andrea;
Bao, Zhenan

Publication type:

Article

Material Design of Transparent Oxide Semiconductors for Organic Electronics: Why Do Zinc Silicate Thin Films Have Exceptional Properties?

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 2, p. 1, doi. 10.1002/aelm.201700352

By:

Nakamura, Nobuhiro;
Kim, Junghwan;
Hosono, Hideo

Publication type:

Article

Hybrid Perovskite‐Based Position‐Sensitive Detectors.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 2, p. 1, doi. 10.1002/aelm.201700362

By:

Ashar, A. Z.;
Ganesh, N.;
Narayan, K. S.

Publication type:

Article

Bipolar Magnetic Materials Based on 2D Ni[TCNE] Metal–Organic Coordination Networks.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 2, p. 1, doi. 10.1002/aelm.201700323

By:

Chen, Yu;
Liu, Junyi;
Sun, Qiang;
Kawazoe, Yoshiyuki;
Jena, Puru

Publication type:

Article

Crystal Imperfection Modulation Engineering for Functionalization of Wide Band Gap Semiconductor Radiation Detector.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 2, p. 1, doi. 10.1002/aelm.201700307

By:

Ji, Xu;
Chen, Liang;
Xu, Mengxuan;
Dong, Mei;
Yan, Kun;
Cheng, Shuang;
Kong, Xueqian;
Wang, Tongyao;
Liu, Jiandang;
Gu, Bingchuan;
Wang, Huanhua;
Liu, Zhiyong;
Wang, Shuao;
Huang, Feng;
Ouyang, Xiaoping

Publication type:

Article

Role of the Electrode Material on the RESET Limitation in Oxide ReRAM Devices.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 2, p. 1, doi. 10.1002/aelm.201700243

By:

Schönhals, Alexander;
Rosário, Carlos M. M.;
Hoffmann‐Eifert, Susanne;
Waser, Rainer;
Menzel, Stephan;
Wouters, Dirk J.

Publication type:

Article

Transparent Nanoscale Polyimide Gate Dielectric for Highly Flexible Electronics.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 2, p. 1, doi. 10.1002/aelm.201700043

By:

Park, Saungeun;
Chang, Hsiao‐Yu;
Rahimi, Somayyeh;
Lee, Alvin L.;
Tao, Li;
Akinwande, Deji

Publication type:

Article

Works matching IS 2199160X AND DT 2018 AND VI 4 AND IP 2

Masthead: (Adv. Electron. Mater. 2/2018).

Sensors: Hybrid Perovskite‐Based Position‐Sensitive Detectors (Adv. Electron. Mater. 2/2018).

ReRAM: Role of the Electrode Material on the RESET Limitation in Oxide ReRAM Devices (Adv. Electron. Mater. 2/2018).

Semiconductors: Crystal Imperfection Modulation Engineering for Functionalization of Wide Band Gap Semiconductor Radiation Detector (Adv. Electron. Mater. 2/2018).

Design of CMOS Compatible, High‐Speed, Highly‐Stable Complementary Switching with Multilevel Operation in 3D Vertically Stacked Novel HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/TiO<italic><sub>x</sub></italic> (HAT) RRAM.

Finding Our Voice: <italic>Advanced Electronic Materials</italic> is 3 Years Old.

Nonvolatile Electric‐Optical Memory Controlled by Conductive Filaments in Ti‐Doped BiFeO<sub>3</sub>.

Organic/Inorganic Hybrid EIL for All‐Solution‐Processed OLEDs.

Insights into the Failure Mechanisms of Organic Photodetectors.

Mesoscopic 2D Charge Transport in Commonplace PEDOT:PSS Films.

Enhanced Stability of Black Phosphorus Field‐Effect Transistors via Hydrogen Treatment.

3D‐Integrated and Multifunctional All‐Soft Physical Microsystems Based on Liquid Metal for Electronic Skin Applications.

A Free‐Standing High‐Output Power Density Thermoelectric Device Based on Structure‐Ordered PEDOT:PSS.

Chemiresistive and Chemicapacitive Devices Formed via Morphology Control of Electroconductive Bio‐nanocomposites.

Novel Optoelectronic Devices: Transition‐Metal‐Dichalcogenide‐Based 2D Heterostructures.

Pyrolytically Modified Polyacrylonitrile‐Covalently Grafted MoS<sub>2</sub> Nanosheets for a Nonvolatile Rewritable Memory Device.

Stretchable Polymer Semiconductors for Plastic Electronics.

Material Design of Transparent Oxide Semiconductors for Organic Electronics: Why Do Zinc Silicate Thin Films Have Exceptional Properties?

Hybrid Perovskite‐Based Position‐Sensitive Detectors.

Bipolar Magnetic Materials Based on 2D Ni[TCNE] Metal–Organic Coordination Networks.

Crystal Imperfection Modulation Engineering for Functionalization of Wide Band Gap Semiconductor Radiation Detector.

Role of the Electrode Material on the RESET Limitation in Oxide ReRAM Devices.

Transparent Nanoscale Polyimide Gate Dielectric for Highly Flexible Electronics.