Works matching IS 2199160X AND DT 2018 AND VI 4 AND IP 12

Results: 27

Dual‐Gate Field Effect Transistors: Planar Dual‐Gate Paper/Oxide Field Effect Transistors as Universal Logic Gates (Adv. Electron. Mater. 12/2018)

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201870059

By:

Gaspar, Diana;
Martins, Jorge;
Bahubalindruni, Pydi;
Pereira, Luís;
Fortunato, Elvira;
Martins, Rodrigo

Publication type:

Article

Artificial Synapses: Photoelectric Plasticity in Oxide Thin Film Transistors with Tunable Synaptic Functions (Adv. Electron. Mater. 12/2018)

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201870058

By:

Wu, Quantan;
Wang, Jiawei;
Cao, Jingchen;
Lu, Congyan;
Yang, Guanhua;
Shi, Xuewen;
Chuai, Xichen;
Gong, Yuxin;
Su, Yue;
Zhao, Ying;
Lu, Nianduan;
Geng, Di;
Wang, Hong;
Li, Ling;
Liu, Ming

Publication type:

Article

Masthead: (Adv. Electron. Mater. 12/2018)

Published in:: Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201870057
Publication type:: Article

Flexible Artificial Synapses: Transferable and Flexible Artificial Memristive Synapse Based on WOx Schottky Junction on Arbitrary Substrates (Adv. Electron. Mater. 12/2018)

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201870056

By:

Lin, Ya;
Zeng, Tao;
Xu, Haiyang;
Wang, Zhongqiang;
Zhao, Xiaoning;
Liu, Weizhen;
Ma, Jiangang;
Liu, Yichun

Publication type:

Article

Polyoxometalates: Polyoxometalates‐Modulated Reduced Graphene Oxide Flash Memory with Ambipolar Trapping as Bidirectional Artificial Synapse (Adv. Electron. Mater. 12/2018)

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201870055

By:

Chen, Xiaoli;
Pan, Jingyi;
Fu, Jingjing;
Zhu, Xin;
Zhang, Chen;
Zhou, Li;
Wang, Yan;
Lv, Ziyu;
Zhou, Ye;
Han, Su‐Ting

Publication type:

Article

Enhanced Charge Transport in Hybrid Perovskite Field-Effect Transistors via Microstructure Control.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800316

By:

Zeidell, Andrew M.;
Tyznik, Colin;
Jennings, Laura;
Chuang Zhang;
Hyunsu Lee;
Guthold, Martin;
Vardeny, Z. Valy;
Jurchescu, Oana D.

Publication type:

Article

An All-Inorganic, Transparent, Flexible, and Nonvolatile Resistive Memory.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800412

By:

Yuxi Yang;
Wenxiu Gao;
Zhongshuai Xie;
Yaojin Wang;
Guoliang Yuan;
Jun-Ming Liu

Publication type:

Article

High Oxide Ion Conduction in Molten Na2W2O7.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800352

By:

Jungu Xu;
Yanchang Li;
Jiehua Wang;
Hongliang Bao;
Jianqiang Wang;
Changli Zhu;
Lingting Ye;
Kui Xie;
Xiaojun Kuang

Publication type:

Article

Photoelectric Plasticity in Oxide Thin Film Transistors with Tunable Synaptic Functions.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800556

By:

Quantan Wu;
Jiawei Wang;
Jingchen Cao;
Congyan Lu;
Guanhua Yang;
Xuewen Shi;
Xichen Chuai;
Yuxin Gong;
Yue Su;
Ying Zhao;
Nianduan Lu;
Di Geng;
Hong Wang;
Ling Li;
Ming Liu

Publication type:

Article

Perspectives on Thermoelectricity in Layered and 2D Materials.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800248

By:

Jing Wu;
Yabin Chen;
Junqiao Wu;
Hippalgaonkar, Kedar

Publication type:

Article

Low-Voltage, Printed, All-Polymer Integrated Circuits Employing a Low-Leakage and High-Yield Polymer Dielectric.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800340

By:

Stucchi, Elena;
Dell'Erba, Giorgio;
Colpani, Paolo;
Yun-Hi Kim;
Caironi, Mario

Publication type:

Article

Giant Piezoelectric Response in Superionic Polar Semiconductor.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800174

By:

Yuki Shiomi;
Tomoki Akiba;
Hidefumi Takahashi;
Shintaro Ishiwata

Publication type:

Article

Optimized Method for Low-Energy and Highly Reliable Multibit Operation in a HfO2-Based Resistive Switching Device.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800261

By:

Jin Joo Ryu;
Bo Keun Park;
Taek-Mo Chung;
Young Kuk Lee;
Gun Hwan Kim

Publication type:

Article

Effect of Water, Oxygen, and Air Exposure on CH3NH3PbI3-xClx Perovskite Surface Electronic Properties.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800307

By:

Ralaiarisoa, Maryline;
Salzmann, Ingo;
Feng-Shuo Zu;
Koch, Norbert

Publication type:

Article

Vertical Tunnel Junction Embedding a Spin Crossover Molecular Film.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800204

By:

Poggini, Lorenzo;
Gonidec, Mathieu;
González-Estefan, Juan H.;
Pecastaings, Gilles;
Gobaut, Benoît;
Rosa, Patrick

Publication type:

Article

Diode Property and Positive Temperature Coefficient of Resistance of Pt/Al2O3/Nb:SrTiO3.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800388

By:

Taehwan Moon;
Hyun Jae Lee;
Keum Do Kim;
Young Hwan Lee;
Seung Dam Hyun;
Hyeon Woo Park;
Yong Bin Lee;
Baek Su Kim;
Cheol Seong Hwang

Publication type:

Article

When Memristance Crosses the Path with Humidity Sensing--About the Importance of Protons and Its Opportunities in Valence Change Memristors.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800282

By:

Messerschmitt, Felix;
Jansen, Maximilian;
Rupp, Jennifer L. M.

Publication type:

Article

On the Evaluation of the Sensitivity Coefficient of Strain Sensors.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800353

By:

Ya-Feng Liu;
Yuan-Qing Li;
Pei Huang;
Ning Hu;
Shao-Yun Fu

Publication type:

Article

Transferable and Flexible Artificial Memristive Synapse Based on WOx Schottky Junction on Arbitrary Substrates.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800373

By:

Ya Lin;
Tao Zeng;
Haiyang Xu;
Zhongqiang Wang;
Xiaoning Zhao;
Weizhen Liu;
Jiangang Ma;
Yichun Liu

Publication type:

Article

Solution-Grown Serpentine Silver Nanofiber Meshes for Stretchable Transparent Conductors.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800346

By:

Peng Li;
Wei Zhang;
Jiangang Ma;
Xiao Wang;
Haiyang Xu;
Lujia Cong;
Yichun Liu

Publication type:

Article

Halide Perovskite Quantum Dots for Light-Emitting Diodes: Properties, Synthesis, Applications, and Outlooks.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800335

By:

Quyet Van Le;
Kootak Hong;
Ho Won Jang;
Soo Young Kim

Publication type:

Article

Rigorous Characterization and Predictive Modeling of Hole Transport in Amorphous Organic Semiconductors.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800366

By:

Kotadiya, Naresh B.;
Mondal, Anirban;
Shiyun Xiong;
Blom, Paul W. M.;
Andrienko, Denis;
Wetzelaer, Gert-Jan A. H.

Publication type:

Article

Switchable-Memory Operation of Silicon Nanowire Transistor.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800429

By:

Yoonjoong Kim;
Jinsun Cho;
Doohyeok Lim;
Sola Woo;
Kyoungah Cho;
Sangsig Kim

Publication type:

Article

Highly Improved Switching Properties in Flexible Aluminum Oxide Resistive Memories Based on a Multilayer Device Structure.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800355

By:

Jingon Jang;
Han-Hyeong Choi;
Sung Hoon Paik;
Jai Kyeong Kim;
Seungjun Chung;
Jong Hyuk Park

Publication type:

Article

n-Type Doping Effect of CVD-Grown Multilayer MoSe2 Thin Film Transistors by Two-Step Functionalization.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800308

By:

Seongin Hong;
Haelin Im;
Young Ki Hong;
Na Liu;
Sunkook Kim;
Jun Hong Park

Publication type:

Article

Planar Dual-Gate Paper/Oxide Field Effect Transistors as Universal Logic Gates.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800423

By:

Gaspar, Diana;
Martins, Jorge;
Bahubalindruni, Pydi;
Pereira, Luís;
Fortunato, Elvira;
Martins, Rodrigo

Publication type:

Article

Polyoxometalates-Modulated Reduced Graphene Oxide Flash Memory with Ambipolar Trapping as Bidirectional Artificial Synapse.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800444

By:

Xiaoli Chen;
Jingyi Pan;
Jingjing Fu;
Xin Zhu;
Chen Zhang;
Li Zhou;
Yan Wang;
Ziyu Lv;
Ye Zhou;
Su-Ting Han

Publication type:

Article

Works matching IS 2199160X AND DT 2018 AND VI 4 AND IP 12

Dual‐Gate Field Effect Transistors: Planar Dual‐Gate Paper/Oxide Field Effect Transistors as Universal Logic Gates (Adv. Electron. Mater. 12/2018)

Artificial Synapses: Photoelectric Plasticity in Oxide Thin Film Transistors with Tunable Synaptic Functions (Adv. Electron. Mater. 12/2018)

Masthead: (Adv. Electron. Mater. 12/2018)

Flexible Artificial Synapses: Transferable and Flexible Artificial Memristive Synapse Based on WO<sub>x</sub> Schottky Junction on Arbitrary Substrates (Adv. Electron. Mater. 12/2018)

Polyoxometalates: Polyoxometalates‐Modulated Reduced Graphene Oxide Flash Memory with Ambipolar Trapping as Bidirectional Artificial Synapse (Adv. Electron. Mater. 12/2018)

Enhanced Charge Transport in Hybrid Perovskite Field-Effect Transistors via Microstructure Control.

An All-Inorganic, Transparent, Flexible, and Nonvolatile Resistive Memory.

High Oxide Ion Conduction in Molten Na<sub>2</sub>W<sub>2</sub>O<sub>7</sub>.

Photoelectric Plasticity in Oxide Thin Film Transistors with Tunable Synaptic Functions.

Perspectives on Thermoelectricity in Layered and 2D Materials.

Low-Voltage, Printed, All-Polymer Integrated Circuits Employing a Low-Leakage and High-Yield Polymer Dielectric.

Giant Piezoelectric Response in Superionic Polar Semiconductor.

Optimized Method for Low-Energy and Highly Reliable Multibit Operation in a HfO<sub>2</sub>-Based Resistive Switching Device.

Effect of Water, Oxygen, and Air Exposure on CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3-x</sub>Cl<sub>x</sub> Perovskite Surface Electronic Properties.

Vertical Tunnel Junction Embedding a Spin Crossover Molecular Film.

Diode Property and Positive Temperature Coefficient of Resistance of Pt/Al<sub>2</sub>O<sub>3</sub>/Nb:SrTiO<sub>3</sub>.

When Memristance Crosses the Path with Humidity Sensing--About the Importance of Protons and Its Opportunities in Valence Change Memristors.

On the Evaluation of the Sensitivity Coefficient of Strain Sensors.

Transferable and Flexible Artificial Memristive Synapse Based on WO<sub>x</sub> Schottky Junction on Arbitrary Substrates.

Solution-Grown Serpentine Silver Nanofiber Meshes for Stretchable Transparent Conductors.

Halide Perovskite Quantum Dots for Light-Emitting Diodes: Properties, Synthesis, Applications, and Outlooks.

Rigorous Characterization and Predictive Modeling of Hole Transport in Amorphous Organic Semiconductors.

Switchable-Memory Operation of Silicon Nanowire Transistor.

Highly Improved Switching Properties in Flexible Aluminum Oxide Resistive Memories Based on a Multilayer Device Structure.

n-Type Doping Effect of CVD-Grown Multilayer MoSe<sub>2</sub> Thin Film Transistors by Two-Step Functionalization.

Planar Dual-Gate Paper/Oxide Field Effect Transistors as Universal Logic Gates.

Polyoxometalates-Modulated Reduced Graphene Oxide Flash Memory with Ambipolar Trapping as Bidirectional Artificial Synapse.