Works matching IS 2199160X AND DT 2018 AND VI 4 AND IP 12
Results: 27
Dual‐Gate Field Effect Transistors: Planar Dual‐Gate Paper/Oxide Field Effect Transistors as Universal Logic Gates (Adv. Electron. Mater. 12/2018)
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- Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201870059
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- Article
Artificial Synapses: Photoelectric Plasticity in Oxide Thin Film Transistors with Tunable Synaptic Functions (Adv. Electron. Mater. 12/2018)
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- Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201870058
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Masthead: (Adv. Electron. Mater. 12/2018)
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- Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201870057
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- Article
Flexible Artificial Synapses: Transferable and Flexible Artificial Memristive Synapse Based on WO<sub>x</sub> Schottky Junction on Arbitrary Substrates (Adv. Electron. Mater. 12/2018)
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- Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201870056
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- Article
Polyoxometalates: Polyoxometalates‐Modulated Reduced Graphene Oxide Flash Memory with Ambipolar Trapping as Bidirectional Artificial Synapse (Adv. Electron. Mater. 12/2018)
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- Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201870055
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- Article
Enhanced Charge Transport in Hybrid Perovskite Field-Effect Transistors via Microstructure Control.
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- Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800316
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An All-Inorganic, Transparent, Flexible, and Nonvolatile Resistive Memory.
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- Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800412
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- Article
High Oxide Ion Conduction in Molten Na<sub>2</sub>W<sub>2</sub>O<sub>7</sub>.
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- Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800352
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- Article
Photoelectric Plasticity in Oxide Thin Film Transistors with Tunable Synaptic Functions.
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- Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800556
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- Article
Perspectives on Thermoelectricity in Layered and 2D Materials.
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- Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800248
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Low-Voltage, Printed, All-Polymer Integrated Circuits Employing a Low-Leakage and High-Yield Polymer Dielectric.
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- Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800340
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- Article
Giant Piezoelectric Response in Superionic Polar Semiconductor.
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- Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800174
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- Article
Optimized Method for Low-Energy and Highly Reliable Multibit Operation in a HfO<sub>2</sub>-Based Resistive Switching Device.
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- Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800261
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Effect of Water, Oxygen, and Air Exposure on CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3-x</sub>Cl<sub>x</sub> Perovskite Surface Electronic Properties.
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- Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800307
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- Article
Vertical Tunnel Junction Embedding a Spin Crossover Molecular Film.
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- Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800204
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- Article
Diode Property and Positive Temperature Coefficient of Resistance of Pt/Al<sub>2</sub>O<sub>3</sub>/Nb:SrTiO<sub>3</sub>.
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- Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800388
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- Article
When Memristance Crosses the Path with Humidity Sensing--About the Importance of Protons and Its Opportunities in Valence Change Memristors.
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- Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800282
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- Article
On the Evaluation of the Sensitivity Coefficient of Strain Sensors.
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- Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800353
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- Article
Transferable and Flexible Artificial Memristive Synapse Based on WO<sub>x</sub> Schottky Junction on Arbitrary Substrates.
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- Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800373
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- Article
Solution-Grown Serpentine Silver Nanofiber Meshes for Stretchable Transparent Conductors.
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- Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800346
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- Article
Halide Perovskite Quantum Dots for Light-Emitting Diodes: Properties, Synthesis, Applications, and Outlooks.
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- Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800335
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- Article
Rigorous Characterization and Predictive Modeling of Hole Transport in Amorphous Organic Semiconductors.
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- Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800366
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- Article
Switchable-Memory Operation of Silicon Nanowire Transistor.
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- Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800429
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- Article
Highly Improved Switching Properties in Flexible Aluminum Oxide Resistive Memories Based on a Multilayer Device Structure.
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- Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800355
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- Article
n-Type Doping Effect of CVD-Grown Multilayer MoSe<sub>2</sub> Thin Film Transistors by Two-Step Functionalization.
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- Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800308
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- Article
Planar Dual-Gate Paper/Oxide Field Effect Transistors as Universal Logic Gates.
- Published in:
- Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800423
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- Publication type:
- Article
Polyoxometalates-Modulated Reduced Graphene Oxide Flash Memory with Ambipolar Trapping as Bidirectional Artificial Synapse.
- Published in:
- Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201800444
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- Article