Works matching IS 2199160X AND DT 2017 AND VI 3 AND IP 9


Results: 19
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    Resistive Random Access Memory: Solving the Scaling Issue of Increasing Forming Voltage in Resistive Random Access Memory Using High- k Spacer Structure (Adv. Electron. Mater. 9/2017).

    Published in:
    Advanced Electronic Materials, 2017, v. 3, n. 9, p. n/a, doi. 10.1002/aelm.201770041
    By:
    • Tseng, Yi‐Ting;
    • Chen, Po‐Hsun;
    • Chang, Ting‐Chang;
    • Chang, Kuan‐Chang;
    • Tsai, Tsung‐Ming;
    • Shih, Chih‐Cheng;
    • Huang, Hui‐Chun;
    • Yang, Cheng‐Chi;
    • Lin, Chih‐Yang;
    • Wu, Cheng‐Hsien;
    • Zheng, Hao‐Xuan;
    • Zhang, Shengdong;
    • Sze, Simon M.
    Publication type:
    Article
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