Works matching IS 2199160X AND DT 2017 AND VI 3 AND IP 7

Results: 26

Neuromorphic Computing: Rectification-Regulated Memristive Characteristics in Electron-Type CuPc-Based Element for Electrical Synapse (Adv. Electron. Mater. 7/2017).
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 7, p. n/a, doi. 10.1002/aelm.201770027
By:
- Wang, Laiyuan;
- Yang, Jie;
- Zhu, Ying;
- Yi, Mingdong;
- Xie, Linghai;
- Ju, Ruolin;
- Wang, Zhiyong;
- Liu, Lutao;
- Li, Tengfei;
- Zhang, Chenxi;
- Chen, Yan;
- Wu, Yanan;
- Huang, Wei
Publication type:
Article
Next-Generation Memory: Double-Layer-Stacked One Diode-One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109 (Adv. Electron. Mater. 7/2017).
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 7, p. n/a, doi. 10.1002/aelm.201700152
By:
- Yoon, Kyung Jean;
- Kim, Gun Hwan;
- Yoo, Sijung;
- Bae, Woorham;
- Yoon, Jung Ho;
- Park, Tae Hyung;
- Kwon, Dae Eun;
- Kwon, Yeong Jae;
- Kim, Hae Jin;
- Kim, Yu Min;
- Hwang, Cheol Seong
Publication type:
Article
Polarization-Dependent Electronic Transport in Graphene/Pb(Zr,Ti)O3 Ferroelectric Field-Effect Transistors.
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 7, p. n/a, doi. 10.1002/aelm.201700020
By:
- Lipatov, Alexey;
- Fursina, Alexandra;
- Vo, Timothy H.;
- Sharma, Pankaj;
- Gruverman, Alexei;
- Sinitskii, Alexander
Publication type:
Article
Contents: (Adv. Electron. Mater. 7/2017).
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 7, p. n/a, doi. 10.1002/aelm.201770029
Publication type:
Article
Triphasic 2D Materials by Vertically Stacking Laterally Heterostructured 2H-/1T′-MoS2 on Graphene for Enhanced Photoresponse.
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 7, p. n/a, doi. 10.1002/aelm.201700024
By:
- Cui, Weili;
- Xu, Shanshan;
- Yan, Bo;
- Guo, Zhihua;
- Xu, Qun;
- Sumpter, Bobby G.;
- Huang, Jingsong;
- Yin, Shiwei;
- Zhao, Huijun;
- Wang, Yun
Publication type:
Article
Painting Integrated Complementary Logic Circuits for Single-Crystal Organic Transistors: A Demonstration of a Digital Wireless Communication Sensing Tag.
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 7, p. n/a, doi. 10.1002/aelm.201600456
By:
- Yamamura, Akifumi;
- Matsui, Hiroyuki;
- Uno, Mayumi;
- Isahaya, Nobuaki;
- Tanaka, Yuki;
- Kudo, Makoto;
- Ito, Masataka;
- Mitsui, Chikahiko;
- Okamoto, Toshihiro;
- Takeya, Jun
Publication type:
Article
Large-Area 2D/3D MoS2-MoO2 Heterostructures with Thermally Stable Exciton and Intriguing Electrical Transport Behaviors.
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 7, p. n/a, doi. 10.1002/aelm.201600335
By:
- Li, Dawei;
- Xiao, Zhiyong;
- Golgir, Hossein Rabiee;
- Jiang, Lijia;
- Singh, Vijay Raj;
- Keramatnejad, Kamran;
- Smith, Kevin E.;
- Hong, Xia;
- Jiang, Lan;
- Silvain, Jean‐Francois;
- Lu, Yongfeng
Publication type:
Article
Unidirectionally Crystallized Stable n-Type Organic Thin-Film Transistors Based on Solution-Processable Donor-Acceptor Compounds.
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 7, p. n/a, doi. 10.1002/aelm.201700097
By:
- Shibata, Yosei;
- Tsutsumi, Jun'ya;
- Matsuoka, Satoshi;
- Minemawari, Hiromi;
- Arai, Shunto;
- Kumai, Reiji;
- Hasegawa, Tatsuo
Publication type:
Article
Rollerball-Pen-Drawing Technology for Extremely Foldable Paper-Based Electronics.
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 7, p. n/a, doi. 10.1002/aelm.201700098
By:
- Liu, Shuiren;
- Li, Junpeng;
- Shi, Xinlei;
- Gao, Enlai;
- Xu, Zhiping;
- Tang, Honghao;
- Tong, Kwing;
- Pei, Qibing;
- Liang, Jiajie;
- Chen, Yongsheng
Publication type:
Article
Two-Dimensional Semiconductors: From Materials Preparation to Electronic Applications.
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 7, p. n/a, doi. 10.1002/aelm.201700045
By:
- Liu, Bilu;
- Abbas, Ahmad;
- Zhou, Chongwu
Publication type:
Article
Conductivity Enhancement of PEDOT:PSS via Addition of Chloroplatinic Acid and Its Mechanism.
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 7, p. n/a, doi. 10.1002/aelm.201700047
By:
- Wu, Falin;
- Li, Pengcheng;
- Sun, Kuan;
- Zhou, Yongli;
- Chen, Wei;
- Fu, Jiehao;
- Li, Meng;
- Lu, Shirong;
- Wei, Dongshan;
- Tang, Xiaosheng;
- Zang, Zhigang;
- Sun, Lidong;
- Liu, Xixia;
- Ouyang, Jianyong
Publication type:
Article
Scanning Kelvin Probe Microscopy Reveals Planar Defects Are Sources of Electronic Disorder in Organic Semiconductor Crystals.
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 7, p. n/a, doi. 10.1002/aelm.201700117
By:
- Wu, Yanfei;
- Ren, Xinglong;
- McGarry, Kathryn A.;
- Bruzek, Matthew J.;
- Douglas, Christopher J.;
- Frisbie, C. Daniel
Publication type:
Article
Rectification-Regulated Memristive Characteristics in Electron-Type CuPc-Based Element for Electrical Synapse.
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 7, p. n/a, doi. 10.1002/aelm.201700063
By:
- Wang, Laiyuan;
- Yang, Jie;
- Zhu, Ying;
- Yi, Mingdong;
- Xie, Linghai;
- Ju, Ruolin;
- Wang, Zhiyong;
- Liu, Lutao;
- Li, Tengfei;
- Zhang, Chenxi;
- Chen, Yan;
- Wu, Yanan;
- Huang, Wei
Publication type:
Article
Fully Printed Silver-Nanoparticle-Based Strain Gauges with Record High Sensitivity.
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 7, p. n/a, doi. 10.1002/aelm.201700067
By:
- Zhang, Suoming;
- Cai, Le;
- Li, Wei;
- Miao, Jinshui;
- Wang, Tongyu;
- Yeom, Junghoon;
- Sepúlveda, Nelson;
- Wang, Chuan
Publication type:
Article
Nanoionics-Enabled Memristive Devices: Strategies and Materials for Neuromorphic Applications.
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 7, p. n/a, doi. 10.1002/aelm.201600510
By:
- Wang, Zhiyong;
- Wang, Laiyuan;
- Nagai, Masaru;
- Xie, Linghai;
- Yi, Mingdong;
- Huang, Wei
Publication type:
Article
Masthead: (Adv. Electron. Mater. 7/2017).
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 7, p. n/a, doi. 10.1002/aelm.201770030
Publication type:
Article
Piezoelectrics: High Piezoelectric Performance and Phase Transition in Stressed Lead-Free (1 - x)(K, Na)(Sb, Nb)O3- x(Bi, Na, K)ZrO3 Thin Films (Adv. Electron. Mater. 7/2017).
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 7, p. n/a, doi. 10.1002/aelm.201770031
By:
- Wang, Yumei;
- Yao, Kui;
- Qin, Xian;
- Mirshekarloo, Meysam Sharifzadeh;
- Liu, Xiaogang;
- Tay, Francis Eng Hock
Publication type:
Article
Double-Layer-Stacked One Diode-One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109.
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 7, p. n/a, doi. 10.1002/aelm.201700152
By:
- Yoon, Kyung Jean;
- Kim, Gun Hwan;
- Yoo, Sijung;
- Bae, Woorham;
- Yoon, Jung Ho;
- Park, Tae Hyung;
- Kwon, Dae Eun;
- Kwon, Yeong Jae;
- Kim, Hae Jin;
- Kim, Yu Min;
- Hwang, Cheol Seong
Publication type:
Article
Multifunctional Nanoionic Devices Enabling Simultaneous Heterosynaptic Plasticity and Efficient In-Memory Boolean Logic.
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 7, p. n/a, doi. 10.1002/aelm.201700032
By:
- Yang, Yuchao;
- Yin, Minghui;
- Yu, Zhizhen;
- Wang, Zongwei;
- Zhang, Teng;
- Cai, Yimao;
- Lu, Wei D.;
- Huang, Ru
Publication type:
Article
High Piezoelectric Performance and Phase Transition in Stressed Lead-Free (1 - x)(K, Na)(Sb, Nb)O3- x(Bi, Na, K)ZrO3 Thin Films.
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 7, p. n/a, doi. 10.1002/aelm.201700033
By:
- Wang, Yumei;
- Yao, Kui;
- Qin, Xian;
- Mirshekarloo, Meysam Sharifzadeh;
- Liu, Xiaogang;
- Tay, Francis Eng Hock
Publication type:
Article
Hybrid YBa2Cu3O7 Superconducting-Ferromagnetic Nanocomposite Thin Films Prepared from Colloidal Chemical Solutions.
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 7, p. n/a, doi. 10.1002/aelm.201700037
By:
- Bartolomé, Elena;
- Cayado, Pablo;
- Solano, Eduardo;
- Mocuta, Cristian;
- Ricart, Susagna;
- Mundet, Bernat;
- Coll, Marionna;
- Gázquez, Jaume;
- Meledin, Alexander;
- van Tendeloo, Gustaaf;
- Valvidares, S. Manuel;
- Herrero‐Martín, Javier;
- Gargiani, Pierluigi;
- Pellegrin, Eric;
- Magén, Cesar;
- Puig, Teresa;
- Obradors, Xavier
Publication type:
Article
Anderson-Localization and the Mott-Ioffe-Regel Limit in Glassy-Metallic PEDOT.
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 7, p. n/a, doi. 10.1002/aelm.201700050
By:
- Farka, Dominik;
- Coskun, Halime;
- Gasiorowski, Jacek;
- Cobet, Christoph;
- Hingerl, Kurt;
- Uiberlacker, Lisa Maria;
- Hild, Sabine;
- Greunz, Theresia;
- Stifter, David;
- Sariciftci, Niyazi Serdar;
- Menon, Reghu;
- Schoefberger, Wolfgang;
- Mardare, Cezarina Cela;
- Hassel, Achim Walter;
- Schwarzinger, Clemens;
- Scharber, Markus Clark;
- Stadler, Philipp
Publication type:
Article
Tuning the Ferroelectric Properties of Trialkylbenzene-1,3,5-tricarboxamide (BTA).
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 7, p. n/a, doi. 10.1002/aelm.201600530
By:
- Urbanaviciute, Indre;
- Meng, Xiao;
- Cornelissen, Tim D.;
- Gorbunov, Andrey V.;
- Bhattacharjee, Subham;
- Sijbesma, Rint P.;
- Kemerink, Martijn
Publication type:
Article
Tunneling Spintronics across MgO Driven by Double Oxygen Vacancies.
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 7, p. n/a, doi. 10.1002/aelm.201600390
By:
- Taudul, Beata;
- Monteblanco, Elmer Nahuel;
- Halisdemir, Ufuk;
- Lacour, Daniel;
- Schleicher, Filip;
- Montaigne, François;
- Beaurepaire, Eric;
- Boukari, Samy;
- Hehn, Michel;
- Alouani, Mébarek;
- Bowen, Martin
Publication type:
Article
High-Performance Broadband Perovskite Photodetectors Based on CH3NH3PbI3/C8BTBT Heterojunction.
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 7, p. n/a, doi. 10.1002/aelm.201700058
By:
- Tong, Sichao;
- Sun, Jia;
- Wang, Chunhua;
- Huang, Yulan;
- Zhang, Chujun;
- Shen, Jianqiang;
- Xie, Haipeng;
- Niu, Dongmei;
- Xiao, Si;
- Yuan, Yongbo;
- He, Jun;
- Yang, Junliang;
- Gao, Yongli
Publication type:
Article
Antiferroelectric Tunnel Junctions.
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 7, p. n/a, doi. 10.1002/aelm.201700126
By:
- Apachitei, Geanina;
- Peters, Jonathan J. P.;
- Sanchez, Ana M.;
- Kim, Dong Jik;
- Alexe, Marin
Publication type:
Article

Works matching IS 2199160X AND DT 2017 AND VI 3 AND IP 7

Neuromorphic Computing: Rectification-Regulated Memristive Characteristics in Electron-Type CuPc-Based Element for Electrical Synapse (Adv. Electron. Mater. 7/2017).

Next-Generation Memory: Double-Layer-Stacked One Diode-One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 10<sup>9</sup> (Adv. Electron. Mater. 7/2017).

Polarization-Dependent Electronic Transport in Graphene/Pb(Zr,Ti)O<sub>3</sub> Ferroelectric Field-Effect Transistors.

Contents: (Adv. Electron. Mater. 7/2017).

Triphasic 2D Materials by Vertically Stacking Laterally Heterostructured 2H-/1T′-MoS<sub>2</sub> on Graphene for Enhanced Photoresponse.

Painting Integrated Complementary Logic Circuits for Single-Crystal Organic Transistors: A Demonstration of a Digital Wireless Communication Sensing Tag.

Large-Area 2D/3D MoS<sub>2</sub>-MoO<sub>2</sub> Heterostructures with Thermally Stable Exciton and Intriguing Electrical Transport Behaviors.

Unidirectionally Crystallized Stable n-Type Organic Thin-Film Transistors Based on Solution-Processable Donor-Acceptor Compounds.

Rollerball-Pen-Drawing Technology for Extremely Foldable Paper-Based Electronics.

Two-Dimensional Semiconductors: From Materials Preparation to Electronic Applications.

Conductivity Enhancement of PEDOT:PSS via Addition of Chloroplatinic Acid and Its Mechanism.

Scanning Kelvin Probe Microscopy Reveals Planar Defects Are Sources of Electronic Disorder in Organic Semiconductor Crystals.

Rectification-Regulated Memristive Characteristics in Electron-Type CuPc-Based Element for Electrical Synapse.

Fully Printed Silver-Nanoparticle-Based Strain Gauges with Record High Sensitivity.

Nanoionics-Enabled Memristive Devices: Strategies and Materials for Neuromorphic Applications.

Masthead: (Adv. Electron. Mater. 7/2017).

Piezoelectrics: High Piezoelectric Performance and Phase Transition in Stressed Lead-Free (1 - x)(K, Na)(Sb, Nb)O<sub>3</sub>- x(Bi, Na, K)ZrO<sub>3</sub> Thin Films (Adv. Electron. Mater. 7/2017).

Double-Layer-Stacked One Diode-One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 10<sup>9</sup>.

Multifunctional Nanoionic Devices Enabling Simultaneous Heterosynaptic Plasticity and Efficient In-Memory Boolean Logic.

High Piezoelectric Performance and Phase Transition in Stressed Lead-Free (1 - x)(K, Na)(Sb, Nb)O<sub>3</sub>- x(Bi, Na, K)ZrO<sub>3</sub> Thin Films.

Hybrid YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7</sub> Superconducting-Ferromagnetic Nanocomposite Thin Films Prepared from Colloidal Chemical Solutions.

Anderson-Localization and the Mott-Ioffe-Regel Limit in Glassy-Metallic PEDOT.

Tuning the Ferroelectric Properties of Trialkylbenzene-1,3,5-tricarboxamide (BTA).

Tunneling Spintronics across MgO Driven by Double Oxygen Vacancies.

High-Performance Broadband Perovskite Photodetectors Based on CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub>/C8BTBT Heterojunction.

Antiferroelectric Tunnel Junctions.