Works matching IS 2199160X AND DT 2017 AND VI 3 AND IP 4

Results: 20

Ionic Thermoelectric Figure of Merit for Charging of Supercapacitors.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 4, p. 1, doi. 10.1002/aelm.201700013

By:

Wang, Hui;
Zhao, Dan;
Khan, Zia Ulla;
Puzinas, Skomantas;
Jonsson, Magnus P.;
Berggren, Magnus;
Crispin, Xavier

Publication type:

Article

Masthead: (Adv. Electron. Mater. 4/2017).

Published in:: Advanced Electronic Materials, 2017, v. 3, n. 4, p. 1, doi. 10.1002/aelm.201770019
Publication type:: Article

Wearable Electronics: Mechanically Durable and Flexible Thermoelectric Films from PEDOT:PSS/PVA/Bi0.5Sb1.5Te3 Nanocomposites (Adv. Electron. Mater. 4/2017).

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 4, p. 1, doi. 10.1002/aelm.201770017

By:

Zhang, Ting;
Li, Kaiwei;
Li, Chengchao;
Ma, Shaoyang;
Hng, Huey Hoon;
Wei, Lei

Publication type:

Article

Contents: (Adv. Electron. Mater. 4/2017).

Published in:: Advanced Electronic Materials, 2017, v. 3, n. 4, p. 1, doi. 10.1002/aelm.201770018
Publication type:: Article

Solution‐Processed Neodymium Oxide/ZnO Thin‐Film Transistors with Electron Mobility in Excess of 65 cm V−1 s−1.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 4, p. 1, doi. 10.1002/aelm.201700025

By:

Esro, Mazran;
Kolosov, Oleg;
Stolojan, Vlad;
Jones, Peter J.;
Milne, William I.;
Adamopoulos, George

Publication type:

Article

Negative Isotope Effect on Field‐Effect Hole Transport in Fully Substituted 13C‐Rubrene.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 4, p. 1, doi. 10.1002/aelm.201700018

By:

Ren, Xinglong;
Bruzek, Matthew J.;
Hanifi, David A.;
Schulzetenberg, Aaron;
Wu, Yanfei;
Kim, Chang‐Hyun;
Zhang, Zhuoran;
Johns, James E.;
Salleo, Alberto;
Fratini, Simone;
Troisi, Alessandro;
Douglas, Christopher J.;
Frisbie, C. Daniel

Publication type:

Article

Quantum Materials: Semiconductor‐to‐Metal Transition and Quasiparticle Renormalization in Doped Graphene Nanoribbons (Adv. Electron. Mater. 4/2017).

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 4, p. 1, doi. 10.1002/aelm.201770016

By:

Senkovskiy, Boris V.;
Fedorov, Alexander V.;
Haberer, Danny;
Farjam, Mani;
Simonov, Konstantin A.;
Preobrajenski, Alexei B.;
Mårtensson, Niels;
Atodiresei, Nicolae;
Caciuc, Vasile;
Blügel, Stefan;
Rosch, Achim;
Verbitskiy, Nikolay I.;
Hell, Martin;
Evtushinsky, Daniil V.;
German, Raphael;
Marangoni, Tomas;
van Loosdrecht, Paul H. M.;
Fischer, Felix R.;
Grüneis, Alexander

Publication type:

Article

Direct Imaging of the Relaxation of Individual Ferroelectric Interfaces in a Tensile‐Strained Film.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 4, p. 1, doi. 10.1002/aelm.201600508

By:

Li, Linglong;
Cao, Ye;
Somnath, Suhas;
Yang, Yaodong;
Jesse, Stephen;
Ehara, Yoshitaka;
Funakubo, Hiroshi;
Chen, Long‐Qing;
Kalinin, Sergei V.;
Vasudevan, Rama K.

Publication type:

Article

Mechanically Durable and Flexible Thermoelectric Films from PEDOT:PSS/PVA/Bi0.5Sb1.5Te3 Nanocomposites.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 4, p. 1, doi. 10.1002/aelm.201600554

By:

Zhang, Ting;
Li, Kaiwei;
Li, Chengchao;
Ma, Shaoyang;
Hng, Huey Hoon;
Wei, Lei

Publication type:

Article

Highly Reliable and Sensitive Tactile Transistor Memory.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 4, p. 1, doi. 10.1002/aelm.201600548

By:

Chen, Chien‐Tung;
Lee, Wen‐Ya;
Shen, Tien‐Lin;
Wu, Hung‐Chin;
Shih, Chien‐Chung;
Ye, Bo‐Wei;
Lin, Tzu‐Yao;
Chen, Wen‐Chang;
Chen, Yang‐Fang

Publication type:

Article

Electron Transport and Nanomorphology in Solution‐Processed Polymeric Semiconductor n‐Doped with an Air‐Stable Organometallic Dimer.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 4, p. 1, doi. 10.1002/aelm.201600546

By:

Zhang, Yuan;
Phan, Hung;
Zhou, Huiqiong;
Zhang, Xuning;
Zhou, Jiyu;
Moudgil, Karttikay;
Barlow, Stephen;
Marder, Seth R.;
Facchetti, Antonio;
Nguyen, Thuc‐Quyen

Publication type:

Article

Inkjet Printing of Single‐Crystalline Bi2Te3 Thermoelectric Nanowire Networks.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 4, p. 1, doi. 10.1002/aelm.201600524

By:

Chen, Bolin;
Das, Suprem R.;
Zheng, Wei;
Zhu, Bowen;
Xu, Biao;
Hong, Sungbum;
Sun, Chenghan;
Wang, Xinwei;
Wu, Yue;
Claussen, Jonathan C.

Publication type:

Article

Thick‐Film High‐Performance Bulk‐Heterojunction Solar Cells Retaining 90% PCEs of the Optimized Thin Film Cells.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 4, p. 1, doi. 10.1002/aelm.201700007

By:

Yin, Hang;
Cheung, Sin Hang;
Ngai, Jenner H. L.;
Ho, Carr Hoi Yi;
Chiu, Ka Lok;
Hao, Xiaotao;
Li, Ho Wa;
Cheng, Yuanhang;
Tsang, Sai Wing;
So, Shu Kong

Publication type:

Article

Semiconductor‐to‐Metal Transition and Quasiparticle Renormalization in Doped Graphene Nanoribbons.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 4, p. 1, doi. 10.1002/aelm.201600490

By:

Senkovskiy, Boris V.;
Fedorov, Alexander V.;
Haberer, Danny;
Farjam, Mani;
Simonov, Konstantin A.;
Preobrajenski, Alexei B.;
Mårtensson, Niels;
Atodiresei, Nicolae;
Caciuc, Vasile;
Blügel, Stefan;
Rosch, Achim;
Verbitskiy, Nikolay I.;
Hell, Martin;
Evtushinsky, Daniil V.;
German, Raphael;
Marangoni, Tomas;
van Loosdrecht, Paul H. M.;
Fischer, Felix R.;
Grüneis, Alexander

Publication type:

Article

Domain Pinning: Comparison of Hafnia and PZT Based Ferroelectrics.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 4, p. 1, doi. 10.1002/aelm.201600505

By:

Fengler, Franz P. G.;
Pešić, Milan;
Starschich, Sergej;
Schneller, Theodor;
Künneth, Christopher;
Böttger, Ulrich;
Mulaosmanovic, Halid;
Schenk, Tony;
Park, Min Hyuk;
Nigon, Robin;
Muralt, Paul;
Mikolajick, Thomas;
Schroeder, Uwe

Publication type:

Article

Novel Transfer Behaviors in 2D MoS2/WSe2 Heterotransistor and Its Applications in Visible‐Near Infrared Photodetection.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 4, p. 1, doi. 10.1002/aelm.201600502

By:

Sun, Mengxing;
Fang, Qiyi;
Xie, Dan;
Sun, Yilin;
Xu, Jianlong;
Teng, Changjiu;
Dai, Ruixuan;
Yang, Pu;
Li, Zhixin;
Li, Weiwei;
Zhang, Yanfeng

Publication type:

Article

Highly Sensitive and Bendable Capacitive Pressure Sensor and Its Application to 1 V Operation Pressure‐Sensitive Transistor.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 4, p. 1, doi. 10.1002/aelm.201600455

By:

Joo, Yunsik;
Yoon, Jaeyoung;
Ha, Jewook;
Kim, Taehoon;
Lee, Seunghwan;
Lee, Byeongmoon;
Pang, Changhyun;
Hong, Yongtaek

Publication type:

Article

Ferroelectric‐Gated Two‐Dimensional‐Material‐Based Electron Devices.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 4, p. 1, doi. 10.1002/aelm.201600400

By:

Zhou, Changjian;
Chai, Yang

Publication type:

Article

Electronic and Optoelectronic Devices based on Two‐Dimensional Materials: From Fabrication to Application.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 4, p. 1, doi. 10.1002/aelm.201600364

By:

Shim, Jaewoo;
Park, Hyung‐Youl;
Kang, Dong‐Ho;
Kim, Jin‐Ok;
Jo, Seo‐Hyeon;
Park, Yongkook;
Park, Jin‐Hong

Publication type:

Article

Oxide Semiconductor Phototransistor with Organolead Trihalide Perovskite Light Absorber.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 4, p. 1, doi. 10.1002/aelm.201600325

By:

Du, Songnan;
Li, Gongtan;
Cao, Xuhong;
Wang, Yan;
Lu, Huiling;
Zhang, Shengdong;
Liu, Chuan;
Zhou, Hang

Publication type:

Article

Works matching IS 2199160X AND DT 2017 AND VI 3 AND IP 4

Ionic Thermoelectric Figure of Merit for Charging of Supercapacitors.

Masthead: (Adv. Electron. Mater. 4/2017).

Wearable Electronics: Mechanically Durable and Flexible Thermoelectric Films from PEDOT:PSS/PVA/Bi<sub>0.5</sub>Sb<sub>1.5</sub>Te<sub>3</sub> Nanocomposites (Adv. Electron. Mater. 4/2017).

Contents: (Adv. Electron. Mater. 4/2017).

Solution‐Processed Neodymium Oxide/ZnO Thin‐Film Transistors with Electron Mobility in Excess of 65 cm V<sup>−1</sup> s<sup>−1</sup>.

Negative Isotope Effect on Field‐Effect Hole Transport in Fully Substituted <sup>13</sup>C‐Rubrene.

Quantum Materials: Semiconductor‐to‐Metal Transition and Quasiparticle Renormalization in Doped Graphene Nanoribbons (Adv. Electron. Mater. 4/2017).

Direct Imaging of the Relaxation of Individual Ferroelectric Interfaces in a Tensile‐Strained Film.

Mechanically Durable and Flexible Thermoelectric Films from PEDOT:PSS/PVA/Bi<sub>0.5</sub>Sb<sub>1.5</sub>Te<sub>3</sub> Nanocomposites.

Highly Reliable and Sensitive Tactile Transistor Memory.

Electron Transport and Nanomorphology in Solution‐Processed Polymeric Semiconductor n‐Doped with an Air‐Stable Organometallic Dimer.

Inkjet Printing of Single‐Crystalline Bi<sub>2</sub>Te<sub>3</sub> Thermoelectric Nanowire Networks.

Thick‐Film High‐Performance Bulk‐Heterojunction Solar Cells Retaining 90% PCEs of the Optimized Thin Film Cells.

Semiconductor‐to‐Metal Transition and Quasiparticle Renormalization in Doped Graphene Nanoribbons.

Domain Pinning: Comparison of Hafnia and PZT Based Ferroelectrics.

Novel Transfer Behaviors in 2D MoS<sub>2</sub>/WSe<sub>2</sub> Heterotransistor and Its Applications in Visible‐Near Infrared Photodetection.

Highly Sensitive and Bendable Capacitive Pressure Sensor and Its Application to 1 V Operation Pressure‐Sensitive Transistor.

Ferroelectric‐Gated Two‐Dimensional‐Material‐Based Electron Devices.

Electronic and Optoelectronic Devices based on Two‐Dimensional Materials: From Fabrication to Application.

Oxide Semiconductor Phototransistor with Organolead Trihalide Perovskite Light Absorber.