Works matching IS 2199160X AND DT 2017 AND VI 3 AND IP 4

Results: 20

Masthead: (Adv. Electron. Mater. 4/2017).
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 4, p. 1, doi. 10.1002/aelm.201770019
Publication type:
Article
Contents: (Adv. Electron. Mater. 4/2017).
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 4, p. 1, doi. 10.1002/aelm.201770018
Publication type:
Article
Quantum Materials: Semiconductor‐to‐Metal Transition and Quasiparticle Renormalization in Doped Graphene Nanoribbons (Adv. Electron. Mater. 4/2017).
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 4, p. 1, doi. 10.1002/aelm.201770016
By:
- Senkovskiy, Boris V.;
- Fedorov, Alexander V.;
- Haberer, Danny;
- Farjam, Mani;
- Simonov, Konstantin A.;
- Preobrajenski, Alexei B.;
- Mårtensson, Niels;
- Atodiresei, Nicolae;
- Caciuc, Vasile;
- Blügel, Stefan;
- Rosch, Achim;
- Verbitskiy, Nikolay I.;
- Hell, Martin;
- Evtushinsky, Daniil V.;
- German, Raphael;
- Marangoni, Tomas;
- van Loosdrecht, Paul H. M.;
- Fischer, Felix R.;
- Grüneis, Alexander
Publication type:
Article
Wearable Electronics: Mechanically Durable and Flexible Thermoelectric Films from PEDOT:PSS/PVA/Bi0.5Sb1.5Te3 Nanocomposites (Adv. Electron. Mater. 4/2017).
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 4, p. 1, doi. 10.1002/aelm.201770017
By:
- Zhang, Ting;
- Li, Kaiwei;
- Li, Chengchao;
- Ma, Shaoyang;
- Hng, Huey Hoon;
- Wei, Lei
Publication type:
Article
Negative Isotope Effect on Field‐Effect Hole Transport in Fully Substituted 13C‐Rubrene.
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 4, p. 1, doi. 10.1002/aelm.201700018
By:
- Ren, Xinglong;
- Bruzek, Matthew J.;
- Hanifi, David A.;
- Schulzetenberg, Aaron;
- Wu, Yanfei;
- Kim, Chang‐Hyun;
- Zhang, Zhuoran;
- Johns, James E.;
- Salleo, Alberto;
- Fratini, Simone;
- Troisi, Alessandro;
- Douglas, Christopher J.;
- Frisbie, C. Daniel
Publication type:
Article
Solution‐Processed Neodymium Oxide/ZnO Thin‐Film Transistors with Electron Mobility in Excess of 65 cm V−1 s−1.
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 4, p. 1, doi. 10.1002/aelm.201700025
By:
- Esro, Mazran;
- Kolosov, Oleg;
- Stolojan, Vlad;
- Jones, Peter J.;
- Milne, William I.;
- Adamopoulos, George
Publication type:
Article
Ionic Thermoelectric Figure of Merit for Charging of Supercapacitors.
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 4, p. 1, doi. 10.1002/aelm.201700013
By:
- Wang, Hui;
- Zhao, Dan;
- Khan, Zia Ulla;
- Puzinas, Skomantas;
- Jonsson, Magnus P.;
- Berggren, Magnus;
- Crispin, Xavier
Publication type:
Article
Thick‐Film High‐Performance Bulk‐Heterojunction Solar Cells Retaining 90% PCEs of the Optimized Thin Film Cells.
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 4, p. 1, doi. 10.1002/aelm.201700007
By:
- Yin, Hang;
- Cheung, Sin Hang;
- Ngai, Jenner H. L.;
- Ho, Carr Hoi Yi;
- Chiu, Ka Lok;
- Hao, Xiaotao;
- Li, Ho Wa;
- Cheng, Yuanhang;
- Tsang, Sai Wing;
- So, Shu Kong
Publication type:
Article
Mechanically Durable and Flexible Thermoelectric Films from PEDOT:PSS/PVA/Bi0.5Sb1.5Te3 Nanocomposites.
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 4, p. 1, doi. 10.1002/aelm.201600554
By:
- Zhang, Ting;
- Li, Kaiwei;
- Li, Chengchao;
- Ma, Shaoyang;
- Hng, Huey Hoon;
- Wei, Lei
Publication type:
Article
Highly Reliable and Sensitive Tactile Transistor Memory.
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 4, p. 1, doi. 10.1002/aelm.201600548
By:
- Chen, Chien‐Tung;
- Lee, Wen‐Ya;
- Shen, Tien‐Lin;
- Wu, Hung‐Chin;
- Shih, Chien‐Chung;
- Ye, Bo‐Wei;
- Lin, Tzu‐Yao;
- Chen, Wen‐Chang;
- Chen, Yang‐Fang
Publication type:
Article
Electron Transport and Nanomorphology in Solution‐Processed Polymeric Semiconductor n‐Doped with an Air‐Stable Organometallic Dimer.
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 4, p. 1, doi. 10.1002/aelm.201600546
By:
- Zhang, Yuan;
- Phan, Hung;
- Zhou, Huiqiong;
- Zhang, Xuning;
- Zhou, Jiyu;
- Moudgil, Karttikay;
- Barlow, Stephen;
- Marder, Seth R.;
- Facchetti, Antonio;
- Nguyen, Thuc‐Quyen
Publication type:
Article
Inkjet Printing of Single‐Crystalline Bi2Te3 Thermoelectric Nanowire Networks.
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 4, p. 1, doi. 10.1002/aelm.201600524
By:
- Chen, Bolin;
- Das, Suprem R.;
- Zheng, Wei;
- Zhu, Bowen;
- Xu, Biao;
- Hong, Sungbum;
- Sun, Chenghan;
- Wang, Xinwei;
- Wu, Yue;
- Claussen, Jonathan C.
Publication type:
Article
Direct Imaging of the Relaxation of Individual Ferroelectric Interfaces in a Tensile‐Strained Film.
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 4, p. 1, doi. 10.1002/aelm.201600508
By:
- Li, Linglong;
- Cao, Ye;
- Somnath, Suhas;
- Yang, Yaodong;
- Jesse, Stephen;
- Ehara, Yoshitaka;
- Funakubo, Hiroshi;
- Chen, Long‐Qing;
- Kalinin, Sergei V.;
- Vasudevan, Rama K.
Publication type:
Article
Domain Pinning: Comparison of Hafnia and PZT Based Ferroelectrics.
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 4, p. 1, doi. 10.1002/aelm.201600505
By:
- Fengler, Franz P. G.;
- Pešić, Milan;
- Starschich, Sergej;
- Schneller, Theodor;
- Künneth, Christopher;
- Böttger, Ulrich;
- Mulaosmanovic, Halid;
- Schenk, Tony;
- Park, Min Hyuk;
- Nigon, Robin;
- Muralt, Paul;
- Mikolajick, Thomas;
- Schroeder, Uwe
Publication type:
Article
Novel Transfer Behaviors in 2D MoS2/WSe2 Heterotransistor and Its Applications in Visible‐Near Infrared Photodetection.
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 4, p. 1, doi. 10.1002/aelm.201600502
By:
- Sun, Mengxing;
- Fang, Qiyi;
- Xie, Dan;
- Sun, Yilin;
- Xu, Jianlong;
- Teng, Changjiu;
- Dai, Ruixuan;
- Yang, Pu;
- Li, Zhixin;
- Li, Weiwei;
- Zhang, Yanfeng
Publication type:
Article
Semiconductor‐to‐Metal Transition and Quasiparticle Renormalization in Doped Graphene Nanoribbons.
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 4, p. 1, doi. 10.1002/aelm.201600490
By:
- Senkovskiy, Boris V.;
- Fedorov, Alexander V.;
- Haberer, Danny;
- Farjam, Mani;
- Simonov, Konstantin A.;
- Preobrajenski, Alexei B.;
- Mårtensson, Niels;
- Atodiresei, Nicolae;
- Caciuc, Vasile;
- Blügel, Stefan;
- Rosch, Achim;
- Verbitskiy, Nikolay I.;
- Hell, Martin;
- Evtushinsky, Daniil V.;
- German, Raphael;
- Marangoni, Tomas;
- van Loosdrecht, Paul H. M.;
- Fischer, Felix R.;
- Grüneis, Alexander
Publication type:
Article
Highly Sensitive and Bendable Capacitive Pressure Sensor and Its Application to 1 V Operation Pressure‐Sensitive Transistor.
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 4, p. 1, doi. 10.1002/aelm.201600455
By:
- Joo, Yunsik;
- Yoon, Jaeyoung;
- Ha, Jewook;
- Kim, Taehoon;
- Lee, Seunghwan;
- Lee, Byeongmoon;
- Pang, Changhyun;
- Hong, Yongtaek
Publication type:
Article
Ferroelectric‐Gated Two‐Dimensional‐Material‐Based Electron Devices.
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 4, p. 1, doi. 10.1002/aelm.201600400
By:
- Zhou, Changjian;
- Chai, Yang
Publication type:
Article
Electronic and Optoelectronic Devices based on Two‐Dimensional Materials: From Fabrication to Application.
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 4, p. 1, doi. 10.1002/aelm.201600364
By:
- Shim, Jaewoo;
- Park, Hyung‐Youl;
- Kang, Dong‐Ho;
- Kim, Jin‐Ok;
- Jo, Seo‐Hyeon;
- Park, Yongkook;
- Park, Jin‐Hong
Publication type:
Article
Oxide Semiconductor Phototransistor with Organolead Trihalide Perovskite Light Absorber.
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 4, p. 1, doi. 10.1002/aelm.201600325
By:
- Du, Songnan;
- Li, Gongtan;
- Cao, Xuhong;
- Wang, Yan;
- Lu, Huiling;
- Zhang, Shengdong;
- Liu, Chuan;
- Zhou, Hang
Publication type:
Article

Works matching IS 2199160X AND DT 2017 AND VI 3 AND IP 4

Masthead: (Adv. Electron. Mater. 4/2017).

Contents: (Adv. Electron. Mater. 4/2017).

Quantum Materials: Semiconductor‐to‐Metal Transition and Quasiparticle Renormalization in Doped Graphene Nanoribbons (Adv. Electron. Mater. 4/2017).

Wearable Electronics: Mechanically Durable and Flexible Thermoelectric Films from PEDOT:PSS/PVA/Bi<sub>0.5</sub>Sb<sub>1.5</sub>Te<sub>3</sub> Nanocomposites (Adv. Electron. Mater. 4/2017).

Negative Isotope Effect on Field‐Effect Hole Transport in Fully Substituted <sup>13</sup>C‐Rubrene.

Solution‐Processed Neodymium Oxide/ZnO Thin‐Film Transistors with Electron Mobility in Excess of 65 cm V<sup>−1</sup> s<sup>−1</sup>.

Ionic Thermoelectric Figure of Merit for Charging of Supercapacitors.

Thick‐Film High‐Performance Bulk‐Heterojunction Solar Cells Retaining 90% PCEs of the Optimized Thin Film Cells.

Mechanically Durable and Flexible Thermoelectric Films from PEDOT:PSS/PVA/Bi<sub>0.5</sub>Sb<sub>1.5</sub>Te<sub>3</sub> Nanocomposites.

Highly Reliable and Sensitive Tactile Transistor Memory.

Electron Transport and Nanomorphology in Solution‐Processed Polymeric Semiconductor n‐Doped with an Air‐Stable Organometallic Dimer.

Inkjet Printing of Single‐Crystalline Bi<sub>2</sub>Te<sub>3</sub> Thermoelectric Nanowire Networks.

Direct Imaging of the Relaxation of Individual Ferroelectric Interfaces in a Tensile‐Strained Film.

Domain Pinning: Comparison of Hafnia and PZT Based Ferroelectrics.

Novel Transfer Behaviors in 2D MoS<sub>2</sub>/WSe<sub>2</sub> Heterotransistor and Its Applications in Visible‐Near Infrared Photodetection.

Semiconductor‐to‐Metal Transition and Quasiparticle Renormalization in Doped Graphene Nanoribbons.

Highly Sensitive and Bendable Capacitive Pressure Sensor and Its Application to 1 V Operation Pressure‐Sensitive Transistor.

Ferroelectric‐Gated Two‐Dimensional‐Material‐Based Electron Devices.

Electronic and Optoelectronic Devices based on Two‐Dimensional Materials: From Fabrication to Application.

Oxide Semiconductor Phototransistor with Organolead Trihalide Perovskite Light Absorber.