Works matching IS 2199160X AND DT 2017 AND VI 3 AND IP 3

Results: 26

Masthead: (Adv. Electron. Mater. 3/2017).

Published in:: Advanced Electronic Materials, 2017, v. 3, n. 3, p. 1, doi. 10.1002/aelm.201770014
Publication type:: Article

Contents: (Adv. Electron. Mater. 3/2017).

Published in:: Advanced Electronic Materials, 2017, v. 3, n. 3, p. 1, doi. 10.1002/aelm.201770013
Publication type:: Article

Ferroelectrics: Enhanced Ferroelectric and Visible‐Light Photoelectric Properties in Multiferroic KBiFe2O5 via Pressure‐Induced Phase Transition (Adv. Electron. Mater. 3/2017).

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 3, p. 1, doi. 10.1002/aelm.201600498

By:

Zhang, Ganghua;
Liu, Fengliang;
Gu, Tingting;
Zhao, Yongsheng;
Li, Nana;
Yang, Wenge;
Feng, Shouhua

Publication type:

Article

Solar Cells: Effects of Hydrogen on Acceptor Activation in Ternary Nitride Semiconductors (Adv. Electron. Mater. 3/2017).

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 3, p. 1, doi. 10.1002/aelm.201770011

By:

Fioretti, Angela N.;
Stokes, Adam;
Young, Matthew R.;
Gorman, Brian;
Toberer, Eric S.;
Tamboli, Adele C.;
Zakutayev, Andriy

Publication type:

Article

Organic Semiconductors: Carrier‐Selective Traps: A New Approach for Fabricating Circuit Elements with Ambipolar Organic Semiconductors (Adv. Electron. Mater. 3/2017).

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 3, p. 1, doi. 10.1002/aelm.201770015

By:

Ford, Michael J.;
Labram, John G.;
Wang, Ming;
Wang, Hengbin;
Nguyen, Thuc‐Quyen;
Bazan, Guillermo C.

Publication type:

Article

Observing Ion Motion in Conjugated Polyelectrolytes with Kelvin Probe Force Microscopy.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 3, p. 1, doi. 10.1002/aelm.201700005

By:

Collins, Samuel D.;
Mikhnenko, Oleksandr V.;
Nguyen, Thanh Luan;
Rengert, Zachary D.;
Bazan, Guillermo C.;
Woo, Han Young;
Nguyen, Thuc‐Quyen

Publication type:

Article

Effects of Hydrogen on Acceptor Activation in Ternary Nitride Semiconductors.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 3, p. 1, doi. 10.1002/aelm.201600544

By:

Fioretti, Angela N.;
Stokes, Adam;
Young, Matthew R.;
Gorman, Brian;
Toberer, Eric S.;
Tamboli, Adele C.;
Zakutayev, Andriy

Publication type:

Article

A Flexible PMN‐PT Ribbon‐Based Piezoelectric‐Pyroelectric Hybrid Generator for Human‐Activity Energy Harvesting and Monitoring.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 3, p. 1, doi. 10.1002/aelm.201600540

By:

Chen, Yan;
Zhang, Yang;
Yuan, Feifei;
Ding, Fei;
Schmidt, Oliver G.

Publication type:

Article

Carrier‐Selective Traps: A New Approach for Fabricating Circuit Elements with Ambipolar Organic Semiconductors.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 3, p. 1, doi. 10.1002/aelm.201600537

By:

Ford, Michael J.;
Labram, John G.;
Wang, Ming;
Wang, Hengbin;
Nguyen, Thuc‐Quyen;
Bazan, Guillermo C.

Publication type:

Article

Highly Flexible and Bright Electroluminescent Devices Based on Ag Nanowire Electrodes and Top‐Emission Structure.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 3, p. 1, doi. 10.1002/aelm.201600535

By:

Liang, Guojin;
Hu, Haibo;
Liao, Lei;
He, Yunbin;
Ye, Changhui

Publication type:

Article

A Highly Stretchable and Fatigue‐Free Transparent Electrode Based on an In‐Plane Buckled Au Nanotrough Network.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 3, p. 1, doi. 10.1002/aelm.201600534

By:

Huang, Siya;
Liu, Yuan;
Guo, Chuan Fei;
Ren, Zhifeng

Publication type:

Article

Reply to Comment on Polymorphism in the 1:1 Charge‐Transfer Complex DBTTF‐TCNQ and Its Effects on Optical and Electronic Properties.

Published in:

2017

By:

Goetz, Katelyn P.;
Tsutsumi, Jun'ya;
Pookpanratana, Sujitra;
Chen, Jihua;
Corbin, Nathan S.;
Behera, Rakesh K.;
Coropceanu, Veaceslav;
Richter, Curt A.;
Hacker, Christina A.;
Hasegawa, Tatsuo;
Jurchescu, Oana D.

Publication type:

Letter to the Editor

Modulus‐Gradient Conductive Core–Shell Structures Formed by Magnetic Self‐Assembling and Printing Processes for Highly Stretchable Via Applications.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 3, p. 1, doi. 10.1002/aelm.201600517

By:

Oh, Eunho;
Byun, Junghwan;
Lee, Byeongmoon;
Kim, Sangwoo;
Kim, Daesik;
Yoon, Jaeyoung;
Hong, Yongtaek

Publication type:

Article

Illumination‐Induced Hole Doping for Performance Improvement of Graphene/n‐Silicon Solar Cells with P3HT Interlayer.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 3, p. 1, doi. 10.1002/aelm.201600516

By:

Xu, Dikai;
He, Jian;
Yu, Xuegong;
Gao, Dace;
Ma, Lingling;
Mu, Xinhui;
Zhong, Mengyao;
Xu, Yang;
Ye, Jichun;
Xu, Mingsheng;
Yang, Deren

Publication type:

Article

Redox Chloride Elimination Reaction: Facile Solution Route for Indium‐Free, Low‐Voltage, and High‐Performance Transistors.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 3, p. 1, doi. 10.1002/aelm.201600513

By:

Liu, Ao;
Guo, Zidong;
Liu, Guoxia;
Zhu, Chundan;
Zhu, Huihui;
Shin, Byoungchul;
Fortunato, Elvira;
Martins, Rodrigo;
Shan, Fukai

Publication type:

Article

Multifunctional Logic Demonstrated in a Flexible Multigate Oxide‐Based Electric‐Double‐Layer Transistor on Paper Substrate.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 3, p. 1, doi. 10.1002/aelm.201600509

By:

Shao, Feng;
Feng, Ping;
Wan, Changjin;
Wan, Xiang;
Yang, Yi;
Shi, Yi;
Wan, Qing

Publication type:

Article

Polar Dynamics at a Functional Group Level: Infrared‐Visible Sum‐Frequency Generation Study on Polar Columnar Liquid Crystals.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 3, p. 1, doi. 10.1002/aelm.201600503

By:

Araoka, Fumito;
Isoda, Morio;
Miyajima, Daigo;
Seo, Inseon;
Oh‐e, Masahito;
Aida, Takuzo;
Takezoe, Hideo

Publication type:

Article

Electronic Properties of Copper(I) Thiocyanate (CuSCN).

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 3, p. 1, doi. 10.1002/aelm.201600378

By:

Pattanasattayavong, Pichaya;
Promarak, Vinich;
Anthopoulos, Thomas D.

Publication type:

Article

Inverse Hysteresis and Ultrasmall Hysteresis Thin‐Film Transistors Fabricated Using Sputtered Dielectrics.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 3, p. 1, doi. 10.1002/aelm.201600483

By:

Zhao, Yudan;
Huo, Yujia;
Xiao, Xiaoyang;
Wang, Yingcheng;
Zhang, Tianfu;
Jiang, Kaili;
Wang, Jiaping;
Fan, Shoushan;
Li, Qunqing

Publication type:

Article

Flexible Piezoelectric Fibers for Acoustic Sensing and Positioning.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 3, p. 1, doi. 10.1002/aelm.201600449

By:

Wang, Shun;
Zhang, Ting;
Li, Kaiwei;
Ma, Shaoyang;
Chen, Ming;
Lu, Ping;
Wei, Lei

Publication type:

Article

High‐Performance Amorphous InGaZnO Thin‐Film Transistors via Staked Ultrathin High‐k TaOx Buffer Layer Grown on Low‐k SiO2 Gate Oxide.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 3, p. 1, doi. 10.1002/aelm.201600452

By:

Kang, Tae Sung;
Yoon, Kap Soo;
Baek, Gwang Ho;
Ko, Won Bae;
Yang, Seung Mo;
Yeon, Bum Mo;
Hong, Jin Pyo

Publication type:

Article

Comment on Polymorphism in the 1:1 Charge‐Transfer Complex DBTT‐TCNQ and Its Effects on Optical and Electronic Properties.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 3, p. 1, doi. 10.1002/aelm.201600437

By:

Girlando, Alberto

Publication type:

Article

Enhanced Ferroelectric and Visible‐Light Photoelectric Properties in Multiferroic KBiFe2O5 via Pressure‐Induced Phase Transition.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 3, p. 1, doi. 10.1002/aelm.201600498

By:

Zhang, Ganghua;
Liu, Fengliang;
Gu, Tingting;
Zhao, Yongsheng;
Li, Nana;
Yang, Wenge;
Feng, Shouhua

Publication type:

Article

2D Insulator–Metal Transition in Aerosol‐Jet‐Printed Electrolyte‐Gated Indium Oxide Thin Film Transistors.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 3, p. 1, doi. 10.1002/aelm.201600369

By:

Xie, Wei;
Zhang, Xin;
Leighton, Chris;
Frisbie, C. Daniel

Publication type:

Article

One‐Dimensional Nanomaterials for Soft Electronics.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 3, p. 1, doi. 10.1002/aelm.201600314

By:

Gong, Shu;
Cheng, Wenlong

Publication type:

Article

Programmable Spin Logic Based on Spin Hall Effect in a Single Device.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 3, p. 1, doi. 10.1002/aelm.201600282

By:

Wan, Caihua;
Zhang, Xuan;
Yuan, Zhonghui;
Fang, Chi;
Kong, Wenjie;
Zhang, Qintong;
Wu, Hao;
Khan, Usman;
Han, Xiufeng

Publication type:

Article

Works matching IS 2199160X AND DT 2017 AND VI 3 AND IP 3

Masthead: (Adv. Electron. Mater. 3/2017).

Contents: (Adv. Electron. Mater. 3/2017).

Ferroelectrics: Enhanced Ferroelectric and Visible‐Light Photoelectric Properties in Multiferroic KBiFe<sub>2</sub>O<sub>5</sub> via Pressure‐Induced Phase Transition (Adv. Electron. Mater. 3/2017).

Solar Cells: Effects of Hydrogen on Acceptor Activation in Ternary Nitride Semiconductors (Adv. Electron. Mater. 3/2017).

Organic Semiconductors: Carrier‐Selective Traps: A New Approach for Fabricating Circuit Elements with Ambipolar Organic Semiconductors (Adv. Electron. Mater. 3/2017).

Observing Ion Motion in Conjugated Polyelectrolytes with Kelvin Probe Force Microscopy.

Effects of Hydrogen on Acceptor Activation in Ternary Nitride Semiconductors.

A Flexible PMN‐PT Ribbon‐Based Piezoelectric‐Pyroelectric Hybrid Generator for Human‐Activity Energy Harvesting and Monitoring.

Carrier‐Selective Traps: A New Approach for Fabricating Circuit Elements with Ambipolar Organic Semiconductors.

Highly Flexible and Bright Electroluminescent Devices Based on Ag Nanowire Electrodes and Top‐Emission Structure.

A Highly Stretchable and Fatigue‐Free Transparent Electrode Based on an In‐Plane Buckled Au Nanotrough Network.

Reply to Comment on Polymorphism in the 1:1 Charge‐Transfer Complex DBTTF‐TCNQ and Its Effects on Optical and Electronic Properties.

Modulus‐Gradient Conductive Core–Shell Structures Formed by Magnetic Self‐Assembling and Printing Processes for Highly Stretchable Via Applications.

Illumination‐Induced Hole Doping for Performance Improvement of Graphene/n‐Silicon Solar Cells with P3HT Interlayer.

Redox Chloride Elimination Reaction: Facile Solution Route for Indium‐Free, Low‐Voltage, and High‐Performance Transistors.

Multifunctional Logic Demonstrated in a Flexible Multigate Oxide‐Based Electric‐Double‐Layer Transistor on Paper Substrate.

Polar Dynamics at a Functional Group Level: Infrared‐Visible Sum‐Frequency Generation Study on Polar Columnar Liquid Crystals.

Electronic Properties of Copper(I) Thiocyanate (CuSCN).

Inverse Hysteresis and Ultrasmall Hysteresis Thin‐Film Transistors Fabricated Using Sputtered Dielectrics.

Flexible Piezoelectric Fibers for Acoustic Sensing and Positioning.

High‐Performance Amorphous InGaZnO Thin‐Film Transistors via Staked Ultrathin High‐k TaO<sub>x</sub> Buffer Layer Grown on Low‐k SiO<sub>2</sub> Gate Oxide.

Comment on Polymorphism in the 1:1 Charge‐Transfer Complex DBTT‐TCNQ and Its Effects on Optical and Electronic Properties.

Enhanced Ferroelectric and Visible‐Light Photoelectric Properties in Multiferroic KBiFe<sub>2</sub>O<sub>5</sub> via Pressure‐Induced Phase Transition.

2D Insulator–Metal Transition in Aerosol‐Jet‐Printed Electrolyte‐Gated Indium Oxide Thin Film Transistors.

One‐Dimensional Nanomaterials for Soft Electronics.

Programmable Spin Logic Based on Spin Hall Effect in a Single Device.