Works matching IS 2199160X AND DT 2017 AND VI 3 AND IP 1

Results: 24

High‐Yield, Highly Uniform Solution‐Processed Organic Transistors Integrated into Flexible Organic Circuits.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201600410

By:

Uno, Mayumi;
Isahaya, Nobuaki;
Cha, Bu‐Sang;
Omori, Mariko;
Yamamura, Akifumi;
Matsui, Hiroyuki;
Kudo, Makoto;
Tanaka, Yuki;
Kanaoka, Yusuke;
Ito, Masataka;
Takeya, Jun

Publication type:

Article

Pressure Sensors: Nanosphere Lithography for Sub‐10‐nm Nanogap Electrodes (Adv. Electron. Mater. 1/2017).

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201770002

By:

Ji, Deyang;
Li, Tao;
Fuchs, Harald

Publication type:

Article

Neuromorphic Computing: Controllable Multiple Depression in a Graphene Oxide Artificial Synapse (Adv. Electron. Mater. 1/2017).

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201770001

By:

Wang, Laiyuan;
Wang, Zhiyong;
Zhao, Wei;
Hu, Bo;
Xie, Linghai;
Yi, Mingdong;
Ling, Haifeng;
Zhang, Chenxi;
Chen, Yan;
Lin, Jinyi;
Zhu, Jialu;
Huang, Wei

Publication type:

Article

Organic Electronics: The Influence of Isomer Purity on Trap States and Performance of Organic Thin‐Film Transistors (Adv. Electron. Mater. 1/2017).

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201770005

By:

Diemer, Peter J.;
Hayes, Jacori;
Welchman, Evan;
Hallani, Rawad;
Pookpanratana, Sujitra J.;
Hacker, Christina A.;
Richter, Curt A.;
Anthony, John E.;
Thonhauser, Timo;
Jurchescu, Oana D.

Publication type:

Article

Modulating the Surface via Polymer Brush for High‐Performance Inkjet‐Printed Organic Thin‐Film Transistors.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201600402

By:

Ge, Feng;
Wang, Xiaohong;
Zhang, Yunfeng;
Song, Eunjoo;
Zhang, Guobing;
Lu, Hongbo;
Cho, Kilwon;
Qiu, Longzhen

Publication type:

Article

Characterization and Understanding of Thermoresponsive Polymer Composites Based on Spiky Nanostructured Fillers.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201600397

By:

Chen, Zheng;
Pfattner, Raphael;
Bao, Zhenan

Publication type:

Article

Masthead: (Adv. Electron. Mater. 1/2017).

Published in:: Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201770004
Publication type:: Article

Contents: (Adv. Electron. Mater. 1/2017).

Published in:: Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201770003
Publication type:: Article

Plastic Deformation of Polymer Blends as a Means to Achieve Stretchable Organic Transistors.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201600388

By:

Sun, Tianlei;
Scott, Joshua I.;
Wang, Ming;
Kline, Regis Joseph;
Bazan, Guillermo C.;
O'Connor, Brendan T.

Publication type:

Article

Tm3Fe5O12/Pt Heterostructures with Perpendicular Magnetic Anisotropy for Spintronic Applications.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201600376

By:

Quindeau, Andy;
Avci, Can O.;
Liu, Wenqing;
Sun, Congli;
Mann, Maxwell;
Tang, Astera S.;
Onbasli, Mehmet C.;
Bono, David;
Voyles, Paul M.;
Xu, Yongbing;
Robinson, Jason;
Beach, Geoffrey S. D.;
Ross, Caroline A.

Publication type:

Article

Investigation of Energy Levels and Crystal Structures of Cesium Lead Halides and Their Application in Full‐Color Light‐Emitting Diodes.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201600448

By:

Van Le, Quyet;
Park, Minjoon;
Sohn, Woonbae;
Jang, Ho Won;
Kim, Soo Young

Publication type:

Article

High‐Performance Near‐Infrared Phototransistor Based on n‐Type Small‐Molecular Organic Semiconductor.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201600430

By:

Li, Feng;
Chen, Yin;
Ma, Chun;
Buttner, Ulrich;
Leo, Karl;
Wu, Tom

Publication type:

Article

Insulated Molecular Wires: Sheathing Semiconducting Polymers with Organic Nanotubes through Heterogeneous Nucleation.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201600370

By:

Raj, Gijo;
Boulaoued, Athmane;
Lacava, Johann;
Biniek, Laure;
Mésini, Philippe J.;
Brinkmann, Martin;
Faure‐Vincent, Jérôme;
Guenet, Jean‐Michel

Publication type:

Article

Built‐In‐Homojunction‐Dominated Intrinsically Rectifying‐Resistive Switching in NiO Nanodots for Selection‐Device‐Free Memory Application.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201600361

By:

Sun, Zhong;
Wei, Linlin;
Feng, Ce;
Miao, Peixian;
Guo, Meiqi;
Yang, Huaixin;
Li, Jianqi;
Zhao, Yonggang

Publication type:

Article

Nitride Dielectric Environments to Suppress Surface Optical Phonon Dominated Scattering in High‐Performance Multilayer MoS2 FETs.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201600358

By:

Bhattacharjee, Shubhadeep;
Ganapathi, Kolla Lakshmi;
Chandrasekar, Hareesh;
Paul, Tathagata;
Mohan, Sangeneni;
Ghosh, Arindam;
Raghavan, Srinivasan;
Bhat, Navakanta

Publication type:

Article

Nanosphere Lithography for Sub‐10‐nm Nanogap Electrodes.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201600348

By:

Ji, Deyang;
Li, Tao;
Fuchs, Harald

Publication type:

Article

Controllable Multiple Depression in a Graphene Oxide Artificial Synapse.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201600244

By:

Wang, Laiyuan;
Wang, Zhiyong;
Zhao, Wei;
Hu, Bo;
Xie, Linghai;
Yi, Mingdong;
Ling, Haifeng;
Zhang, Chenxi;
Chen, Yan;
Lin, Jinyi;
Zhu, Jialu;
Huang, Wei

Publication type:

Article

Strain‐Modulated Charge Transport in Flexible PbS Nanocrystal Field‐Effect Transistors.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201600360

By:

Nugraha, Mohamad Insan;
Matsui, Hiroyuki;
Watanabe, Shun;
Kubo, Takayoshi;
Häusermann, Roger;
Bisri, Satria Zulkarnaen;
Sytnyk, Mykhailo;
Heiss, Wolfgang;
Loi, Maria Antonietta;
Takeya, Jun

Publication type:

Article

Increased Toughness and Excellent Electronic Properties in Regioregular Random Copolymers of 3‐Alkylthiophenes and Thiophene.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201600316

By:

Smith, Zachary C.;
Wright, Zoe M.;
Arnold, Anne M.;
Sauvé, Geneviève;
McCullough, Richard D.;
Sydlik, Stefanie A.

Publication type:

Article

Magnetic and Magnetodielectric Properties of Epitaxial Iron Vanadate Thin Films.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201600295

By:

Zhou, Dongyi;
Takahashi, Ryota;
Zhou, Yanyu;
Kim, Dohyung;
Suresh, Vandrangi Kumar;
Chu, Ying‐Hao;
He, Qing;
Munroe, Paul;
Lippmaa, Mikk;
Seidel, Jan;
Valanoor, Nagarajan

Publication type:

Article

The Influence of Isomer Purity on Trap States and Performance of Organic Thin‐Film Transistors.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201600294

By:

Diemer, Peter J.;
Hayes, Jacori;
Welchman, Evan;
Hallani, Rawad;
Pookpanratana, Sujitra J.;
Hacker, Christina A.;
Richter, Curt A.;
Anthony, John E.;
Thonhauser, Timo;
Jurchescu, Oana D.

Publication type:

Article

Advanced Materials for Printed Wearable Electrochemical Devices: A Review.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201600260

By:

Kim, Jayoung;
Kumar, Rajan;
Bandodkar, Amay J.;
Wang, Joseph

Publication type:

Article

Source‐Gated Transistors Based on Solution Processed Silicon Nanowires for Low Power Applications.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201600256

By:

Opoku, Charles;
Sporea, Radu A.;
Stolojan, Vlad;
Silva, S. Ravi P.;
Shkunov, Maxim

Publication type:

Article

A Novel Class of Multiferroic Material, Bi4Ti3O12·nBiFeO3 with Localized Magnetic Ordering Evaluated from Their Single Crystals.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201600254

By:

Zhao, Hongyang;
Cai, Kang;
Cheng, Zhenxiang;
Jia, Tingting;
Kimura, Hideo;
Ma, Zhibin;
Fu, Qiuming;
Huang, Zhideng;
Matsumoto, Takao;
Tohei, Tetsuya;
Shibata, Naoya;
Ikuhara, Yuichi

Publication type:

Article

Works matching IS 2199160X AND DT 2017 AND VI 3 AND IP 1

High‐Yield, Highly Uniform Solution‐Processed Organic Transistors Integrated into Flexible Organic Circuits.

Pressure Sensors: Nanosphere Lithography for Sub‐10‐nm Nanogap Electrodes (Adv. Electron. Mater. 1/2017).

Neuromorphic Computing: Controllable Multiple Depression in a Graphene Oxide Artificial Synapse (Adv. Electron. Mater. 1/2017).

Organic Electronics: The Influence of Isomer Purity on Trap States and Performance of Organic Thin‐Film Transistors (Adv. Electron. Mater. 1/2017).

Modulating the Surface via Polymer Brush for High‐Performance Inkjet‐Printed Organic Thin‐Film Transistors.

Characterization and Understanding of Thermoresponsive Polymer Composites Based on Spiky Nanostructured Fillers.

Masthead: (Adv. Electron. Mater. 1/2017).

Contents: (Adv. Electron. Mater. 1/2017).

Plastic Deformation of Polymer Blends as a Means to Achieve Stretchable Organic Transistors.

Tm<sub>3</sub>Fe<sub>5</sub>O<sub>12</sub>/Pt Heterostructures with Perpendicular Magnetic Anisotropy for Spintronic Applications.

Investigation of Energy Levels and Crystal Structures of Cesium Lead Halides and Their Application in Full‐Color Light‐Emitting Diodes.

High‐Performance Near‐Infrared Phototransistor Based on n‐Type Small‐Molecular Organic Semiconductor.

Insulated Molecular Wires: Sheathing Semiconducting Polymers with Organic Nanotubes through Heterogeneous Nucleation.

Built‐In‐Homojunction‐Dominated Intrinsically Rectifying‐Resistive Switching in NiO Nanodots for Selection‐Device‐Free Memory Application.

Nitride Dielectric Environments to Suppress Surface Optical Phonon Dominated Scattering in High‐Performance Multilayer MoS<sub>2</sub> FETs.

Nanosphere Lithography for Sub‐10‐nm Nanogap Electrodes.

Controllable Multiple Depression in a Graphene Oxide Artificial Synapse.

Strain‐Modulated Charge Transport in Flexible PbS Nanocrystal Field‐Effect Transistors.

Increased Toughness and Excellent Electronic Properties in Regioregular Random Copolymers of 3‐Alkylthiophenes and Thiophene.

Magnetic and Magnetodielectric Properties of Epitaxial Iron Vanadate Thin Films.

The Influence of Isomer Purity on Trap States and Performance of Organic Thin‐Film Transistors.

Advanced Materials for Printed Wearable Electrochemical Devices: A Review.

Source‐Gated Transistors Based on Solution Processed Silicon Nanowires for Low Power Applications.

A Novel Class of Multiferroic Material, Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>·nBiFeO<sub>3</sub> with Localized Magnetic Ordering Evaluated from Their Single Crystals.