Works matching IS 2199160X AND DT 2017 AND VI 3 AND IP 1
Results: 24
Contents: (Adv. Electron. Mater. 1/2017).
- Published in:
- Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201770003
- Publication type:
- Article
Organic Electronics: The Influence of Isomer Purity on Trap States and Performance of Organic Thin‐Film Transistors (Adv. Electron. Mater. 1/2017).
- Published in:
- Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201770005
- By:
- Publication type:
- Article
Masthead: (Adv. Electron. Mater. 1/2017).
- Published in:
- Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201770004
- Publication type:
- Article
Pressure Sensors: Nanosphere Lithography for Sub‐10‐nm Nanogap Electrodes (Adv. Electron. Mater. 1/2017).
- Published in:
- Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201770002
- By:
- Publication type:
- Article
Neuromorphic Computing: Controllable Multiple Depression in a Graphene Oxide Artificial Synapse (Adv. Electron. Mater. 1/2017).
- Published in:
- Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201770001
- By:
- Publication type:
- Article
Investigation of Energy Levels and Crystal Structures of Cesium Lead Halides and Their Application in Full‐Color Light‐Emitting Diodes.
- Published in:
- Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201600448
- By:
- Publication type:
- Article
High‐Performance Near‐Infrared Phototransistor Based on n‐Type Small‐Molecular Organic Semiconductor.
- Published in:
- Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201600430
- By:
- Publication type:
- Article
High‐Yield, Highly Uniform Solution‐Processed Organic Transistors Integrated into Flexible Organic Circuits.
- Published in:
- Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201600410
- By:
- Publication type:
- Article
Modulating the Surface via Polymer Brush for High‐Performance Inkjet‐Printed Organic Thin‐Film Transistors.
- Published in:
- Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201600402
- By:
- Publication type:
- Article
Characterization and Understanding of Thermoresponsive Polymer Composites Based on Spiky Nanostructured Fillers.
- Published in:
- Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201600397
- By:
- Publication type:
- Article
Plastic Deformation of Polymer Blends as a Means to Achieve Stretchable Organic Transistors.
- Published in:
- Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201600388
- By:
- Publication type:
- Article
Tm<sub>3</sub>Fe<sub>5</sub>O<sub>12</sub>/Pt Heterostructures with Perpendicular Magnetic Anisotropy for Spintronic Applications.
- Published in:
- Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201600376
- By:
- Publication type:
- Article
Insulated Molecular Wires: Sheathing Semiconducting Polymers with Organic Nanotubes through Heterogeneous Nucleation.
- Published in:
- Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201600370
- By:
- Publication type:
- Article
Built‐In‐Homojunction‐Dominated Intrinsically Rectifying‐Resistive Switching in NiO Nanodots for Selection‐Device‐Free Memory Application.
- Published in:
- Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201600361
- By:
- Publication type:
- Article
Strain‐Modulated Charge Transport in Flexible PbS Nanocrystal Field‐Effect Transistors.
- Published in:
- Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201600360
- By:
- Publication type:
- Article
Nitride Dielectric Environments to Suppress Surface Optical Phonon Dominated Scattering in High‐Performance Multilayer MoS<sub>2</sub> FETs.
- Published in:
- Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201600358
- By:
- Publication type:
- Article
Nanosphere Lithography for Sub‐10‐nm Nanogap Electrodes.
- Published in:
- Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201600348
- By:
- Publication type:
- Article
A Novel Class of Multiferroic Material, Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>·nBiFeO<sub>3</sub> with Localized Magnetic Ordering Evaluated from Their Single Crystals.
- Published in:
- Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201600254
- By:
- Publication type:
- Article
Magnetic and Magnetodielectric Properties of Epitaxial Iron Vanadate Thin Films.
- Published in:
- Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201600295
- By:
- Publication type:
- Article
The Influence of Isomer Purity on Trap States and Performance of Organic Thin‐Film Transistors.
- Published in:
- Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201600294
- By:
- Publication type:
- Article
Advanced Materials for Printed Wearable Electrochemical Devices: A Review.
- Published in:
- Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201600260
- By:
- Publication type:
- Article
Source‐Gated Transistors Based on Solution Processed Silicon Nanowires for Low Power Applications.
- Published in:
- Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201600256
- By:
- Publication type:
- Article
Increased Toughness and Excellent Electronic Properties in Regioregular Random Copolymers of 3‐Alkylthiophenes and Thiophene.
- Published in:
- Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201600316
- By:
- Publication type:
- Article
Controllable Multiple Depression in a Graphene Oxide Artificial Synapse.
- Published in:
- Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201600244
- By:
- Publication type:
- Article