Works matching IS 2199160X AND DT 2016 AND VI 2 AND IP 9

Results: 22

Masthead: (Adv. Electron. Mater. 9/2016).

Published in:: Advanced Electronic Materials, 2016, v. 2, n. 9, p. 1, doi. 10.1002/aelm.201670052
Publication type:: Article

Contents: (Adv. Electron. Mater. 9/2016).

Published in:: Advanced Electronic Materials, 2016, v. 2, n. 9, p. 1, doi. 10.1002/aelm.201670050
Publication type:: Article

Transistors: Solid State Electrochemical WO3 Transistors with High Current Modulation (Adv. Electron. Mater. 9/2016).

Published in:

Advanced Electronic Materials, 2016, v. 2, n. 9, p. 1, doi. 10.1002/aelm.201670049

By:

Grey, Paul;
Pereira, Luís;
Pereira, Sónia;
Barquinha, Pedro;
Cunha, Inês;
Martins, Rodrigo;
Fortunato, Elvira

Publication type:

Article

Chip Architectures: Multimodal Responses of Self‐Organized Circuitry in Electronically Phase Separated Materials (Adv. Electron. Mater. 9/2016).

Published in:

Advanced Electronic Materials, 2016, v. 2, n. 9, p. 1, doi. 10.1002/aelm.201670048

By:

Herklotz, Andreas;
Guo, Hangwen;
Wong, Anthony T.;
Lee, Ho Nyung;
Rack, Philip D.;
Ward, Thomas Z.

Publication type:

Article

Liquid Crystals: High Performance OTFTs Fabricated Using a Calamitic Liquid Crystalline Material of 2‐(4‐Dodecyl phenyl)[1]benzothieno[3,2‐b][1]benzothiophene (Adv. Electron. Mater. 9/2016).

Published in:

Advanced Electronic Materials, 2016, v. 2, n. 9, p. 1, doi. 10.1002/aelm.201670053

By:

He, Yaowu;
Sezen, Melda;
Zhang, Dongwei;
Li, Aiyuan;
Yan, Lijia;
Yu, Hongtao;
He, Chao;
Goto, Osamu;
Loo, Yueh‐Lin;
Meng, Hong

Publication type:

Article

High Performance Graphene–Oxide–Metal Diode through Bias‐Induced Barrier Height Modulation.

Published in:

Advanced Electronic Materials, 2016, v. 2, n. 9, p. 1, doi. 10.1002/aelm.201600223

By:

Urcuyo, Roberto;
Duong, Dinh Loc;
Jeong, Hye Yun;
Burghard, Marko;
Kern, Klaus

Publication type:

Article

Continuous Tuning of the Magnitude and Direction of Spin‐Orbit Torque Using Bilayer Heavy Metals.

Published in:

Advanced Electronic Materials, 2016, v. 2, n. 9, p. 1, doi. 10.1002/aelm.201600210

By:

He, Pan;
Qiu, Xuepeng;
Zhang, Vanessa L.;
Wu, Yang;
Kuok, Meng Hau;
Yang, Hyunsoo

Publication type:

Article

Neuromorphic Computing: Memristors for Energy‐Efficient New Computing Paradigms (Adv. Electron. Mater. 9/2016).

Published in:

Advanced Electronic Materials, 2016, v. 2, n. 9, p. 1, doi. 10.1002/aelm.201670051

By:

Jeong, Doo Seok;
Kim, Kyung Min;
Kim, Sungho;
Choi, Byung Joon;
Hwang, Cheol Seong

Publication type:

Article

Memristors for Energy‐Efficient New Computing Paradigms.

Published in:

Advanced Electronic Materials, 2016, v. 2, n. 9, p. 1, doi. 10.1002/aelm.201600090

By:

Jeong, Doo Seok;
Kim, Kyung Min;
Kim, Sungho;
Choi, Byung Joon;
Hwang, Cheol Seong

Publication type:

Article

Multimodal Responses of Self‐Organized Circuitry in Electronically Phase Separated Materials.

Published in:

Advanced Electronic Materials, 2016, v. 2, n. 9, p. 1, doi. 10.1002/aelm.201600189

By:

Herklotz, Andreas;
Guo, Hangwen;
Wong, Anthony T.;
Lee, Ho Nyung;
Rack, Philip D.;
Ward, Thomas Z.

Publication type:

Article

An Antimony Selenide Molecular Ink for Flexible Broadband Photodetectors.

Published in:

Advanced Electronic Materials, 2016, v. 2, n. 9, p. 1, doi. 10.1002/aelm.201600182

By:

Hasan, Md Rezaul;
Arinze, Ebuka S.;
Singh, Arunima K.;
Oleshko, Vladimir P.;
Guo, Shiqi;
Rani, Asha;
Cheng, Yan;
Kalish, Irina;
Zaghloul, Mona E.;
Rao, Mulpuri V.;
Nguyen, Nhan V.;
Motayed, Abhishek;
Davydov, Albert V.;
Thon, Susanna M.;
Debnath, Ratan

Publication type:

Article

High Performance OTFTs Fabricated Using a Calamitic Liquid Crystalline Material of 2‐(4‐Dodecyl phenyl)[1]benzothieno[3,2‐b][1]benzothiophene.

Published in:

Advanced Electronic Materials, 2016, v. 2, n. 9, p. 1, doi. 10.1002/aelm.201600179

By:

He, Yaowu;
Sezen, Melda;
Zhang, Dongwei;
Li, Aiyuan;
Yan, Lijia;
Yu, Hongtao;
He, Chao;
Goto, Osamu;
Loo, Yueh‐Lin;
Meng, Hong

Publication type:

Article

Structural Changes Underlying Field‐Cycling Phenomena in Ferroelectric HfO2 Thin Films.

Published in:

Advanced Electronic Materials, 2016, v. 2, n. 9, p. 1, doi. 10.1002/aelm.201600173

By:

Grimley, Everett D.;
Schenk, Tony;
Sang, Xiahan;
Pešić, Milan;
Schroeder, Uwe;
Mikolajick, Thomas;
LeBeau, James M.

Publication type:

Article

Performance Upper Limit of sub‐10 nm Monolayer MoS2 Transistors.

Published in:

Advanced Electronic Materials, 2016, v. 2, n. 9, p. 1, doi. 10.1002/aelm.201600191

By:

Ni, Zeyuan;
Ye, Meng;
Ma, Jianhua;
Wang, Yangyang;
Quhe, Ruge;
Zheng, Jiaxin;
Dai, Lun;
Yu, Dapeng;
Shi, Junjie;
Yang, Jinbo;
Watanabe, Satoshi;
Lu, Jing

Publication type:

Article

Magnetoresistance Amplification Effect in Silicon Transistor Device.

Published in:

Advanced Electronic Materials, 2016, v. 2, n. 9, p. 1, doi. 10.1002/aelm.201600174

By:

Wang, Tao;
Yang, Dezheng;
Si, Mingsu;
Wang, Fangcong;
Zhou, Shiming;
Xue, Desheng

Publication type:

Article

Structural Phase Transition and Carrier Density Tuning in SnSexTe1‐x Nanoplates.

Published in:

Advanced Electronic Materials, 2016, v. 2, n. 9, p. 1, doi. 10.1002/aelm.201600144

By:

Shen, Jie;
Woods, John M.;
Xie, Yujun;
Morales‐Acosta, Mayra D.;
Cha, Judy J.

Publication type:

Article

Solid State Electrochemical WO3 Transistors with High Current Modulation.

Published in:

Advanced Electronic Materials, 2016, v. 2, n. 9, p. 1, doi. 10.1002/aelm.201500414

By:

Grey, Paul;
Pereira, Luís;
Pereira, Sónia;
Barquinha, Pedro;
Cunha, Inês;
Martins, Rodrigo;
Fortunato, Elvira

Publication type:

Article

Top‐Pinning Controlled Dewetting for Fabrication of Large‐Scaled Polymer Microwires and Applications in OFETs.

Published in:

Advanced Electronic Materials, 2016, v. 2, n. 9, p. 1, doi. 10.1002/aelm.201600111

By:

Kan, Xiaonan;
Xiao, Chengyi;
Gao, Hanfei;
Wang, Zhaohui;
Wu, Yuchen;
Su, Bin;
Zhang, Jianqi;
Wei, Zhixiang;
Kong, Bin;
Hu, Wenping;
Sun, Yanming;
Jiang, Lei;
Heeger, Alan J.

Publication type:

Article

Thermoelectric Power Factor Enhancement by Spin‐Polarized Currents—A Nanowire Case Study.

Published in:

Advanced Electronic Materials, 2016, v. 2, n. 9, p. 1, doi. 10.1002/aelm.201600058

By:

Niemann, Anna Corinna;
Böhnert, Tim;
Michel, Ann‐Kathrin;
Bäßler, Svenja;
Gotsmann, Bernd;
Neuróhr, Katalin;
Tóth, Bence;
Péter, László;
Bakonyi, Imre;
Vega, Victor;
Prida, Victor M.;
Gooth, Johannes;
Nielsch, Kornelius

Publication type:

Article

Charge Funneling through Metal Electrode Structuring for High‐Efficiency Gains in Polymer Solar Cells.

Published in:

Advanced Electronic Materials, 2016, v. 2, n. 9, p. 1, doi. 10.1002/aelm.201600049

By:

Thirimanne, Hashini M.;
Jayawardena, K. D. G. Imalka;
Anguita, José V.;
Stolojan, Vlad;
Mills, Christopher A.;
Silva, S. Ravi P.

Publication type:

Article

Solution‐Processed Alkaline Lithium Oxide Dielectrics for Applications in n‐ and p‐Type Thin‐Film Transistors.

Published in:

Advanced Electronic Materials, 2016, v. 2, n. 9, p. 1, doi. 10.1002/aelm.201600140

By:

Liu, Ao;
Liu, Guoxia;
Zhu, Chundan;
Zhu, Huihui;
Fortunato, Elvira;
Martins, Rodrigo;
Shan, Fukai

Publication type:

Article

Visible‐Light Driven Nanoscale Photoconductivity of Grain Boundaries in Self‐Supported ZnO Nano‐ and Microstructured Platelets.

Published in:

Advanced Electronic Materials, 2016, v. 2, n. 9, p. 1, doi. 10.1002/aelm.201600138

By:

Faraji, Nastaran;
Ulrich, Clemens;
Wolff, Niklas;
Kienle, Lorenz;
Adelung, Rainer;
Mishra, Yogendra Kumar;
Seidel, Jan

Publication type:

Article

Works matching IS 2199160X AND DT 2016 AND VI 2 AND IP 9

Masthead: (Adv. Electron. Mater. 9/2016).

Contents: (Adv. Electron. Mater. 9/2016).

Transistors: Solid State Electrochemical WO<sub>3</sub> Transistors with High Current Modulation (Adv. Electron. Mater. 9/2016).

Chip Architectures: Multimodal Responses of Self‐Organized Circuitry in Electronically Phase Separated Materials (Adv. Electron. Mater. 9/2016).

Liquid Crystals: High Performance OTFTs Fabricated Using a Calamitic Liquid Crystalline Material of 2‐(4‐Dodecyl phenyl)[1]benzothieno[3,2‐b][1]benzothiophene (Adv. Electron. Mater. 9/2016).

High Performance Graphene–Oxide–Metal Diode through Bias‐Induced Barrier Height Modulation.

Continuous Tuning of the Magnitude and Direction of Spin‐Orbit Torque Using Bilayer Heavy Metals.

Neuromorphic Computing: Memristors for Energy‐Efficient New Computing Paradigms (Adv. Electron. Mater. 9/2016).

Memristors for Energy‐Efficient New Computing Paradigms.

Multimodal Responses of Self‐Organized Circuitry in Electronically Phase Separated Materials.

An Antimony Selenide Molecular Ink for Flexible Broadband Photodetectors.

High Performance OTFTs Fabricated Using a Calamitic Liquid Crystalline Material of 2‐(4‐Dodecyl phenyl)[1]benzothieno[3,2‐b][1]benzothiophene.

Structural Changes Underlying Field‐Cycling Phenomena in Ferroelectric HfO<sub>2</sub> Thin Films.

Performance Upper Limit of sub‐10 nm Monolayer MoS<sub>2</sub> Transistors.

Magnetoresistance Amplification Effect in Silicon Transistor Device.

Structural Phase Transition and Carrier Density Tuning in SnSe<sub>x</sub>Te<sub>1‐</sub><sub>x</sub> Nanoplates.

Solid State Electrochemical WO<sub>3</sub> Transistors with High Current Modulation.

Top‐Pinning Controlled Dewetting for Fabrication of Large‐Scaled Polymer Microwires and Applications in OFETs.

Thermoelectric Power Factor Enhancement by Spin‐Polarized Currents—A Nanowire Case Study.

Charge Funneling through Metal Electrode Structuring for High‐Efficiency Gains in Polymer Solar Cells.

Solution‐Processed Alkaline Lithium Oxide Dielectrics for Applications in n‐ and p‐Type Thin‐Film Transistors.

Visible‐Light Driven Nanoscale Photoconductivity of Grain Boundaries in Self‐Supported ZnO Nano‐ and Microstructured Platelets.