Scalable Piezoelectricity in Graphene Oxide Papers Tuned by Hydrogen Bonds.
- Published in:
- Advanced Electronic Materials, 2016, v. 2, n. 10, p. 1, doi. 10.1002/aelm.201600224
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- Publication type:
- Article
Works matching IS 2199160X AND DT 2016 AND VI 2 AND IP 10
Results: 23
1
2
Quantum Electronics: Evidence of Both Surface and Bulk Dirac Bands and Anisotropic Nonsaturating Magnetoresistance in ZrSiS (Adv. Electron. Mater. 10/2016).
- Published in:
- Advanced Electronic Materials, 2016, v. 2, n. 10, p. 1, doi. 10.1002/aelm.201670055
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- Publication type:
- Article
3
Evidence of Both Surface and Bulk Dirac Bands and Anisotropic Nonsaturating Magnetoresistance in ZrSiS.
- Published in:
- Advanced Electronic Materials, 2016, v. 2, n. 10, p. 1, doi. 10.1002/aelm.201600228
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- Publication type:
- Article
4
Masthead: (Adv. Electron. Mater. 10/2016).
- Published in:
- Advanced Electronic Materials, 2016, v. 2, n. 10, p. 1, doi. 10.1002/aelm.201670057
- Publication type:
- Article
5
Contents: (Adv. Electron. Mater. 10/2016).
- Published in:
- Advanced Electronic Materials, 2016, v. 2, n. 10, p. 1, doi. 10.1002/aelm.201670056
- Publication type:
- Article
6
Liquid Crystals: A Mechanically Durable and Flexible Organic Rectifying Diode with a Polyethylenimine Ethoxylated Cathode (Adv. Electron. Mater. 10/2016).
- Published in:
- Advanced Electronic Materials, 2016, v. 2, n. 10, p. 1, doi. 10.1002/aelm.201670058
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- Publication type:
- Article
7
Strong Electrical Manipulation of Spin–Orbit Torque in Ferromagnetic Heterostructures.
- Published in:
- Advanced Electronic Materials, 2016, v. 2, n. 10, p. 1, doi. 10.1002/aelm.201600219
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- Publication type:
- Article
8
Ferroelectrics: Enhanced Ferroelectric Property of P(VDF‐TrFE‐CTFE) Film Using Room‐Temperature Crystallization for High‐Performance Ferroelectric Device Applications (Adv. Electron. Mater. 10/2016).
- Published in:
- Advanced Electronic Materials, 2016, v. 2, n. 10, p. 1, doi. 10.1002/aelm.201670054
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- Publication type:
- Article
9
Engineering the Growth of MoS<sub>2</sub> via Atomic Layer Deposition of Molybdenum Oxide Film Precursor.
- Published in:
- Advanced Electronic Materials, 2016, v. 2, n. 10, p. 1, doi. 10.1002/aelm.201600330
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- Publication type:
- Article
10
Comprehensive Writing Margin Analysis and its Application to Stacked one Diode‐One Memory Device for High‐Density Crossbar Resistance Switching Random Access Memory.
- Published in:
- Advanced Electronic Materials, 2016, v. 2, n. 10, p. 1, doi. 10.1002/aelm.201600326
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- Publication type:
- Article
11
Flexible a‐IGZO Phototransistor for Instantaneous and Cumulative UV‐Exposure Monitoring for Skin Health.
- Published in:
- Advanced Electronic Materials, 2016, v. 2, n. 10, p. 1, doi. 10.1002/aelm.201600273
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- Publication type:
- Article
12
Dual‐Characteristic Transistors Based on Semiconducting Polymer Blends.
- Published in:
- Advanced Electronic Materials, 2016, v. 2, n. 10, p. 1, doi. 10.1002/aelm.201600267
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- Publication type:
- Article
13
A Mechanically Durable and Flexible Organic Rectifying Diode with a Polyethylenimine Ethoxylated Cathode.
- Published in:
- Advanced Electronic Materials, 2016, v. 2, n. 10, p. 1, doi. 10.1002/aelm.201600259
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- Publication type:
- Article
14
Regulating Carrier Dynamics in Single Crystal Halide Perovskite via Interface Engineering and Optical Doping.
- Published in:
- Advanced Electronic Materials, 2016, v. 2, n. 10, p. 1, doi. 10.1002/aelm.201600248
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- Publication type:
- Article
15
Controllable Formation of Nanofilaments in Resistive Memories via Tip‐Enhanced Electric Fields.
- Published in:
- Advanced Electronic Materials, 2016, v. 2, n. 10, p. 1, doi. 10.1002/aelm.201600233
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- Publication type:
- Article
16
Enhanced Ferroelectric Property of P(VDF‐TrFE‐CTFE) Film Using Room‐Temperature Crystallization for High‐Performance Ferroelectric Device Applications.
- Published in:
- Advanced Electronic Materials, 2016, v. 2, n. 10, p. 1, doi. 10.1002/aelm.201600225
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- Publication type:
- Article
17
Holey Contacts: A New Approach to Enhance Charge Injection through Low‐Cost Nanopore‐Structured Silver Electrodes in Bottom‐Gate Bottom‐Contact (BGBC) Organic Field‐Effect Transistors.
- Published in:
- Advanced Electronic Materials, 2016, v. 2, n. 10, p. 1, doi. 10.1002/aelm.201600215
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- Publication type:
- Article
18
p‐Type Doping of Poly(3‐hexylthiophene) with the Strong Lewis Acid Tris(pentafluorophenyl)borane.
- Published in:
- Advanced Electronic Materials, 2016, v. 2, n. 10, p. 1, doi. 10.1002/aelm.201600204
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- Publication type:
- Article
19
Polymorphism in the 1:1 Charge‐Transfer Complex DBTTF–TCNQ and Its Effects on Optical and Electronic Properties.
- Published in:
- Advanced Electronic Materials, 2016, v. 2, n. 10, p. 1, doi. 10.1002/aelm.201600203
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- Publication type:
- Article
20
Highly Efficient Laser Scribed Graphene Electrodes for On‐Chip Electrochemical Sensing Applications.
- Published in:
- Advanced Electronic Materials, 2016, v. 2, n. 10, p. 1, doi. 10.1002/aelm.201600185
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- Publication type:
- Article
21
Superconducting YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7–δ</sub> Nanocomposites Using Preformed ZrO<sub>2</sub> Nanocrystals: Growth Mechanisms and Vortex Pinning Properties.
- Published in:
- Advanced Electronic Materials, 2016, v. 2, n. 10, p. 1, doi. 10.1002/aelm.201600161
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- Publication type:
- Article
22
From Fluorine to Fluorene—A Route to Thermally Stable aza‐BODIPYs for Organic Solar Cell Application.
- Published in:
- Advanced Electronic Materials, 2016, v. 2, n. 10, p. 1, doi. 10.1002/aelm.201600152
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- Publication type:
- Article
23
Spin Orbit Coupling Controlled Spin Pumping and Spin Hall Magnetoresistance Effects.
- Published in:
- Advanced Electronic Materials, 2016, v. 2, n. 10, p. 1, doi. 10.1002/aelm.201600112
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- Publication type:
- Article