Found: 41
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Screening 0D Materials for 2D Nanoelectronics Applications.
- Published in:
- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200393
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- Article
Designing Wake‐Up Free Ferroelectric Capacitors Based on the HfO<sub>2</sub>/ZrO<sub>2</sub> Superlattice Structure.
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- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200737
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- Article
Beyond the 2D Field‐Effect Charge Transport Paradigm in Molecular Thin‐Film Transistors.
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- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200547
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- Article
Reconfigurable Complementary and Combinational Logic Based on Monolithic and Single‐Crystalline Al‐Si Heterostructures.
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- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200567
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- Article
High β‐phase Poly(vinylidene fluoride) Using a Thermally Decomposable Molecular Splint.
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- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200279
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- Article
Large and Tunable Magnetoresistance in Cr<sub>1−</sub><sub>x</sub>Te/Al<sub>2</sub>O<sub>3</sub>/Cr<sub>1−</sub><sub>x</sub>Te Vertical Spin Valve Device.
- Published in:
- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200823
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- Article
Local Characterization of Field Emission Properties of Graphene Flowers.
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- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200690
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- Article
Electrical Detection of Magnetic Skyrmions in a Magnetic Tunnel Junction.
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- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200570
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- Article
Electrical Detection of Magnetic Skyrmions in a Magnetic Tunnel Junction (Adv. Electron. Mater. 1/2023).
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- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202370001
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- Article
High‐κ and High‐Temperature Dipolar Glass Polymers Based on Sulfonylated and Cyanolated Poly(Arylene Ether)s for Capacitive Energy Storage.
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- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200414
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- Article
Antiperovskite Magnetic Materials with 2p Light Elements for Future Practical Applications.
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- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200515
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- Article
Filament Formation in TaO<sub>x</sub> Thin Films for Memristor Device Application: Modeling Electron Energy Loss Spectra and Electron Transport.
- Published in:
- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200828
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- Article
Probing Temperature‐Induced Phase Transitions at Individual Ferroelectric Domain Walls.
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- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200552
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- Article
Nonvolatile Electrochemical Random‐Access Memory under Short Circuit.
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- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200958
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- Article
Suppressing Undesired Channel Length‐Dependent Electrical Characteristics of Fully Integrated InGaZnO Thin‐Film Transistors via Defect Control Layer.
- Published in:
- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200986
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- Article
Protons: Critical Species for Resistive Switching in Interface‐Type Memristors.
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- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200816
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- Article
Protons: Critical Species for Resistive Switching in Interface‐Type Memristors (Adv. Electron. Mater. 1/2023).
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- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202370004
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- Article
Investigating Underlying Mechanisms for Nonfullerene Hybrid Bulk Heterojunctions‐Based Organic Magnetoresistance.
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- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200983
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- Article
Ultrafast Racetrack Based on Compensated Co/Gd‐Based Synthetic Ferrimagnet with All‐Optical Switching.
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- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200613
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- Article
High Energy Storage Density in Nd(Zn<sub>2/3</sub>Nb<sub>1/3</sub>)O<sub>3</sub>‐Doped BiFeO<sub>3</sub>–BaTiO<sub>3</sub> Ceramics.
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- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200930
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- Article
High‐Performance and Environmentally Robust Multilevel Lead‐Free Organotin Halide Perovskite Memristors.
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- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202201005
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- Article
Spatiotemporal Modulation of Plasticity in Multi‐Terminal Tactile Synaptic Transistor.
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- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200733
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- Article
Spatiotemporal Modulation of Plasticity in Multi‐Terminal Tactile Synaptic Transistor (Adv. Electron. Mater. 1/2023).
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- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202370006
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- Article
All‐Electric Spin Device Operation Using the Weyl Semimetal, WTe<sub>2</sub>, at Room Temperature.
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- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200647
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- Article
A Self‐Powered CNT–Si Photodetector with Tuneable Photocurrent.
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- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200919
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- Article
Single‐Contact, Four‐Terminal Microelectromechanical Relay for Efficient Digital Logic.
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- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200584
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- Article
Single‐Contact, Four‐Terminal Microelectromechanical Relay for Efficient Digital Logic (Adv. Electron. Mater. 1/2023).
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- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202370002
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- Article
Self‐Aligning Metallic Vertical Interconnect Access Formation through Microlensing Gas Phase Electrodeposition controlling Airgap and Morphology.
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- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200838
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- Publication type:
- Article
Self‐Aligning Metallic Vertical Interconnect Access Formation through Microlensing Gas Phase Electrodeposition controlling Airgap and Morphology (Adv. Electron. Mater. 1/2023).
- Published in:
- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202370005
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- Article
2023: Year of Re‐Debut.
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- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202201285
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- Article
Dual‐Gate Anti‐Ambipolar Transistor with Van der Waals ReS<sub>2</sub>/WSe<sub>2</sub> Heterojunction for Reconfigurable Logic Operations.
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- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200704
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- Article
Field‐Free Spin‐Orbit Torque Switching of Perpendicular Magnetization by Making Full Use of Spin Hall Effect.
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- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200987
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- Article
A n‐type, Stable Electrolyte Gated Organic Transistor Based on a Printed Polymer.
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- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200573
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- Article
Synergistically Enhanced Performance and Reliability of Abrupt Metal‐Oxide Heterojunction Transistor.
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- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200807
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- Article
Memristor‐Based Intelligent Human‐Like Neural Computing.
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- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200877
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- Article
Design Strategies for Strain‐Insensitive Wearable Healthcare Sensors and Perspective Based on the Seebeck Coefficient.
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- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200534
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- Article
Newly Synthesized High‐k Polymeric Dielectrics with Cyclic Carbonate Functionality for Highly Stability Organic Field‐Effect Transistor Applications.
- Published in:
- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200984
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- Article
Electrically Tuning Interfacial Ion Redistribution for mica/WSe<sub>2</sub> Memory Transistor.
- Published in:
- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200679
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- Article
n‐Involved Optimization of Out‐of‐Plane Optoelectronic Performances in Nanoscale Ruddlesden–Popper Perovskite.
- Published in:
- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200893
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- Article
Output and Negative‐Region Characteristics in Organic Anti‐Ambipolar Transistors.
- Published in:
- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200783
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- Article
Masthead: (Adv. Electron. Mater. 1/2023).
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- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202370003
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- Article