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Tuning the Structure, Magnetic, and High Frequency Properties of Sc‐Doped Sr<sub>0.5</sub>Ba<sub>0.5</sub>Sc<sub>x</sub>Fe<sub>12‐</sub><sub>x</sub>O<sub>19</sub>/NiFe<sub>2</sub>O<sub>4</sub> Hard/Soft Nanocomposites.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202101124
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- Article
Tunable Charge‐Density PEDOT:PSS for Application in Post‐Synaptic Organic Neuromorphic Electrodes.
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- Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100864
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- Article
Tunable Charge‐Density PEDOT:PSS for Application in Post‐Synaptic Organic Neuromorphic Electrodes (Adv. Electron. Mater. 2/2022).
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- Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202270005
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The Role of the Internal Capacitance in Organic Memristive Device for Neuromorphic and Sensing Applications.
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- Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202101319
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- Article
The Unusual Dielectric Response of Large Area Molecular Tunnel Junctions Probed with Impedance Spectroscopy.
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- Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100495
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- Article
WSe<sub>2</sub> N‐Type Negative Capacitance Field‐Effect Transistor with Indium Low Schottky Barrier Contact.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100829
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- Article
On the Optoelectronic Mechanisms Ruling Ti‐hyperdoped Si Photodiodes.
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- Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100788
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- Article
Organic Synaptic Diodes Based on Polymeric Mixed Ionic‐Electronic Conductors.
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- Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100866
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- Article
Sulfurization Engineering of One‐Step Low‐Temperature MoS<sub>2</sub> and WS<sub>2</sub> Thin Films for Memristor Device Applications.
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- Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100515
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- Article
Organic Log‐Domain Integrator Synapse.
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- Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100724
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- Article
Highly Stable Forming‐Free Bipolar Resistive Switching in Cu Layer Stacked Amorphous Carbon Oxide: Transition between CC Bonding Complexes.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100660
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- Article
Tunable Two‐Channel Magnetotransport in SrRuO<sub>3</sub> Ultrathin Films Achieved by Controlling the Kinetics of Heterostructure Deposition.
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- Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100804
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- Article
Volatility Transition from Short‐Term to Long‐Term Photonic Transistor Memory by Using Smectic Liquid Crystalline Molecules as a Floating Gate.
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- Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202101123
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- Article
Photoelectric Dual Response Nonvolatile Memory Device Based on Black Phosphorus Quantum Dots and Fullerene Derivative Composite.
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- Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202101143
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- Article
Enhancement of Interfacial Polarization in BaTiO<sub>3</sub> Thin Films via Oxygen Inhomogeneity.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100876
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- Article
Realizing Diketopyrrolopyrrole Polymer‐Based Uniform Large‐Area Transistors for Active Circuit via Protonic Acid Mediated Molecular Self‐Assembly.
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- Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100881
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- Article
The High‐Pressure Processed Cu<sub>2</sub>S: Phase Intergrowth with Strained Lamella Leading to an Improved Thermoelectric Performance.
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- Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100835
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- Article
A Spiking Stochastic Neuron Based on Stacked InGaZnO Memristors.
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- Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100918
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- Article
Light and Thermally Induced Charge Transfer and Ejection of Micro‐/Nanoparticles from Ferroelectric Crystal Surfaces.
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- Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100761
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- Article
Electromagnetic Shielding Triboelectric Yarns for Human–Machine Interacting.
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- Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202101130
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- Article
Deep‐Submicrometer Complementary Metal‐Oxide‐Semiconductor Transistors Based on Carbon Nanotube Films.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100751
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- Article
High Speed Response Organic Photodetectors with Cascade Buffer Layers.
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- Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100539
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- Article
High Speed Response Organic Photodetectors with Cascade Buffer Layers (Adv. Electron. Mater. 2/2022).
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100539
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- Article
Flexible Threshold Switching Selectors with Ultrahigh Endurance Based on Halide Perovskites.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100771
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- Article
Flexible Threshold Switching Selectors with Ultrahigh Endurance Based on Halide Perovskites (Adv. Electron. Mater. 2/2022).
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202270009
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- Article
Origin of Relaxor Behavior in Barium‐Titanate‐Based Lead‐Free Perovskites.
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- Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100812
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- Article
From Chlorinated Solvents to Branched Polyethylene: Solvent‐Induced Phase Separation for the Greener Processing of Semiconducting Polymers.
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- Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100928
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- Article
Ultrathin Anion Conductors Based Memristor.
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- Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100845
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- Article
Observation of the Pinch‐Off Effect during Electrostatically Gating the Metal‐Insulator Transition.
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- Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100842
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- Article
Metallic Ferromagnet of La<sub>0.5</sub>Sr<sub>0.5</sub>MnO<sub>3</sub> with Negative Permittivity and Permeability.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202101020
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- Article
Reliability Issues of Thin Film Transistors Subject to Electrostatic Discharge Stresses: An Overview.
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- Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100886
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- Article
Reliability Issues of Thin Film Transistors Subject to Electrostatic Discharge Stresses: An Overview (Adv. Electron. Mater. 2/2022).
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202270008
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- Article
Releasable AlGaN/GaN 2D Electron Gas Heterostructure Membranes for Flexible Wide‐Bandgap Electronics.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100652
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- Article
Achieving Large Switchable Polarization and Enhanced Piezoelectric Response in BiFeO<sub>3</sub>‐PbTiO<sub>3</sub> Solid Solution Ceramics.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100883
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- Article
Masthead: (Adv. Electron. Mater. 2/2022).
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202270007
- Publication type:
- Article