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Masthead: (Adv. Electron. Mater. 6/2020).
- Published in:
- Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202070029
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- Article
Cross‐Point Arrays with Low‐Power ITO‐HfO<sub>2</sub> Resistive Memory Cells Integrated on Vertical III‐V Nanowires.
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- Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000154
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- Article
Solution‐Processable Transparent Organic Molecular Nanoadhesives for Exceptionally Durable Nanowire Electrodes.
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- Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.201901440
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- Article
Semiconducting Small Molecules as Active Materials for p‐Type Accumulation Mode Organic Electrochemical Transistors.
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- Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000215
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- Article
2D Electronics: Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al<sub>2</sub>O<sub>3</sub>/SrTiO<sub>3</sub> Interface (Adv. Electron. Mater. 6/2020).
- Published in:
- Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.201901286
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- Article
Space‐Confined Growth of 2D InI Showing High Sensitivity in Photodetection.
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- Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000284
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- Article
In Situ Dynamic Manipulation of Graphene Strain Sensor with Drastically Sensing Performance Enhancement.
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- Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000269
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- Article
Latent Photoinduced Oxygen Doping Revealed from Emission Saturation of Aggregated Domains in Conjugated Polymer Nanofibers.
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- Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000265
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- Article
F4‐TCNQ as an Additive to Impart Stretchable Semiconductors with High Mobility and Stability.
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- Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000251
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- Article
In Quest of Nonfilamentary Switching: A Synergistic Approach of Dual Nanostructure Engineering to Improve the Variability and Reliability of Resistive Random‐Access‐Memory Devices.
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- Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000209
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- Article
High‐Performance Flexible Organic Nonvolatile Memories with Outstanding Stability Using Nickel Oxide Nanofloating Gate and Polymer Electret.
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- Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000189
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- Article
Topological Hall Effect in Single Thick SrRuO<sub>3</sub> Layers Induced by Defect Engineering.
- Published in:
- Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000184
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- Article
Improved Photoelectric Performance of UV Photodetector Based on ZnO Nanoparticle‐Decorated BiOCl Nanosheet Arrays onto PDMS Substrate: The Heterojunction and Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> MXene Conduction Layer.
- Published in:
- Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000168
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- Article
Robust and Transient Write‐Once‐Read‐Many‐Times Memory Device Based on Hybrid Perovskite Film with Novel Room Temperature Molten Salt Solvent.
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- Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000109
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- Article
Discovery of New Polymorphs of Gallium Oxides with Particle Swarm Optimization‐Based Structure Searches.
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- Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000119
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- Article
Spin Logical and Memory Device Based on the Nonvolatile Ferroelectric Control of the Perpendicular Magnetic Anisotropy in PbZr<sub>0.2</sub>Ti<sub>0.8</sub>O<sub>3</sub>/Co/Pt Heterostructure.
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- Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000102
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- Article
Achieving High Alignment of Conjugated Polymers by Controlled Dip‐Coating.
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- Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000080
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- Publication type:
- Article
Realizing Excellent n‐ and p‐Type Niobium‐Based Half‐Heusler Compounds Based on Thermoelectric Properties and High‐Temperature Stability.
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- Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000083
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- Article
Incorporation of Resistive Random Access Memory into Low‐Temperature Polysilicon Transistor with Fin‐Like Structure as 1T1R Device.
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- Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000066
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- Article
Few‐Layer Organic Crystalline van der Waals Heterojunctions for Ultrafast UV Phototransistors.
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- Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000062
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- Publication type:
- Article
A van der Waals Synaptic Transistor Based on Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> and 2D Tungsten Disulfide.
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- Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000057
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- Article
The Origin of Photoinduced Capacitance in Perovskite Solar Cells: Beyond Ionic‐to‐Electronic Current Amplification.
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- Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000030
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- Article
Carbazole Derivatized n‐Alkyl Methacrylate Polymeric Memristors as Flexible Synaptic Substitutes.
- Published in:
- Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000042
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- Publication type:
- Article
Low‐Voltage Heterojunction Metal Oxide Transistors via Rapid Photonic Processing.
- Published in:
- Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000028
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- Publication type:
- Article
Thiazolothiazole‐Based Quinoidal Compounds for High‐Performance n‐Channel Organic Field‐Effect Transistors with Low‐Cost Metal Electrodes.
- Published in:
- Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.201901443
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- Article
Enhanced Charge Transfer and Responsivity in Hybrid Quantum Dot/Graphene Photodetectors Using ZnO as Intermediate Electron‐Collecting Layer.
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- Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000014
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- Publication type:
- Article
Network Structural CNTs Penetrate Porous Carbon Support for Phase‐Change Materials with Enhanced Electro‐Thermal Performance.
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- Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.201901428
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- Article
Interlayers for Improved Hole Injection in Organic Field‐Effect Transistors.
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- Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.201901352
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- Publication type:
- Article
Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al<sub>2</sub>O<sub>3</sub>/SrTiO<sub>3</sub> Interface.
- Published in:
- Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.201901286
- By:
- Publication type:
- Article
Capacitive‐Type Two‐Axis Accelerometer with Liquid‐Type Proof Mass.
- Published in:
- Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.201901265
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- Publication type:
- Article
Control of Unipolar/Ambipolar Transport in Single‐Molecule Transistors through Interface Engineering.
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- Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.201901237
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- Article
Device Model for Methylammonium Lead Iodide Perovskite With Experimentally Validated Ion Dynamics.
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- Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.201900935
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- Article